Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on Si/Si–Ge substrate using molecular beam epitaxy at different growth temperatures. The sample grown at 420°C showed the highest energy conversion efficiency, with a short circuit current of 18 mA/cm² and open circuit voltage of 0.53 V. With different growth temperature, performance of the cells degrade, which is attributed to the increase of nitrogen‐related defects and the decrease of antimony incorporation at higher growth temperature. Copyright © 2017 John Wiley & Sons, Ltd.     

Flexible Cu(In,Ga)Se2 solar cell on stainless steel substrate deposited by multi‐layer precursor method: its photovoltaic performance and deep‐level defects

Cu(In,Ga)Se₂ (CIGS) films on soda‐lime glass and stainless steel (SUS) substrates with several [Ga]/([Ga] + [In]), GGI, and Fe concentrations are fabricated by so‐called “multi‐layer precursor method”. From optical deep‐level transient spectroscopy, deep‐level defect located at 0.8 eV from valence band maximum (E_V) is observed. This defect becomes recombination center when GGI is over 0.4, thereby decreasing cell performances. Fe‐related deep‐level defect is moreover detected in CIGS film on SUS substrate situated at 0.45 eV from E_V. Its density is consistent with Fe concentration in CIGS films. According to SCAPS simulation and experimental results, Fe concentration of above threshold (1.0 × 10¹⁶ atom/cm³) decreases carrier lifetime and carrier density and has more harmful influence on cell performances with GGI of above 0.4. On the other hand, Fe concentration of below threshold (1.0 × 10¹⁶ atom/cm³) has no detrimental impact on cell performances. Namely, conversion efficiency (η) is slightly changed by below 2%. CIGS solar cell on SUS substrate with η of 17.5% is fabricated by decreasing Fe concentration to approximately 5.2 × 10¹⁶ atom/cm³ although higher than the threshold value. Copyright © 2016 John Wiley & Sons, Ltd.     

Aluminum‐doped Zn1 − xMgxO as transparent conductive oxide of Cu(In,Ga)(S,Se)2‐based solar cell for minimizing surface carrier recombination

A 19.5%‐efficient Cu(In,Ga)(S,Se)₂ (CIGSSe)‐based solar cell is obtained by replacing traditional CdS/ZnO buffer layers with Cd_0.75Zn_0.25S/Zn_0.79Mg_0.21O buffer layers for increasing short‐circuit current density because band‐gap energies of Cd_0.75Zn_0.25S and Zn_0.79Mg_0.21O are wider than those of CdS and ZnO, respectively. This yields the increase in external quantum efficiency in a short wavelength range of approximately 320 to 550 nm. Moreover, difference of conduction band minimum (E _C) between Zn_1 − x Mg_x O:Al (transparent conductive oxide, TCO) layer and CIGSSe absorber is optimized by varying [Mg]/([Mg] + [Zn]), x . It is revealed that Zn_1 − x Mg_x O:Al films with [Mg]/([Mg] + [Zn]) in a range of 0.10 to 0.12, enhancing E _g from 3.72 to 3.76 eV, are appropriate as TCO because of their enhanced mobility and decreased carrier density. Addition of 12% Mg into ZnO:Al to form Zn_0.88Mg_0.12O:Al as TCO layer effectively decreases surface carrier recombination and improves photovoltaic parameters, especially open‐circuit voltage and fill factor. This is the first experimental proof of the concept for optimizing E _C difference between TCO and absorber to minimize surface carrier recombination. Ultimately, conversion efficiency (η ) of CIGSSe solar cell with alternative Cd_0.75Zn_0.25S/Zn_0.79Mg_0.21O/Zn_0.88Mg_0.12O:Al (TCO) layers is enhanced to 20.6%, owing to control of total E _C alignment, which is higher η up to 12.6% relative as compared with the solar cell with traditional CdS/ZnO/ZnO:Al layers.     

Thin‐film Cu(In,Ga)(Se,S)2‐based solar cell with (Cd,Zn)S buffer layer and Zn1−xMgxO window layer

(Cd,Zn)S buffer layer and Zn_1−x Mg_x O window layer were investigated to replace the traditional CdS buffer layer and ZnO window layer in Cu(In,Ga)(Se,S)₂ (CIGSSe)‐based solar cell. (Cd,Zn)S with band‐gap energy (E _g) of approximately 2.6 eV was prepared by chemical bath deposition, and Zn_1−x Mg_x O films with different [Mg]/([Mg] + [Zn]) ratios, x , were deposited by radio frequency magnetron co‐sputtering of ZnO and MgO. The estimated optical E _g of Zn_1−x Mg_x O films is linearly enhanced from 3.3 eV for pure ZnO (x  = 0) to 4.1 eV for Zn_0.6Mg_0.4O (x  = 0.4). The quality of the Zn_1−x Mg_x O films, implied by Urbach energy, is severely deteriorated when x is above 0.211. Moreover, the temperature‐dependent current density‐voltage characteristics of the CIGSSe solar cells were conducted for the investigation of the heterointerface recombination mechanism. The external quantum efficiency of the CIGSSe solar cell with the (Cd,Zn)S buffer layer/Zn_1−x Mg_x O window layer is improved in the wavelength range of 320–520 nm. Therefore, a gain in short‐circuit current density up to about 5.7% was obtained, which is higher conversion efficiency of up to around 5.4% relative as compared with the solar cell with the traditional CdS buffer layer/ZnO window layer. The peak efficiency of 19.6% was demonstrated in CIGSSe solar cell with (Cd,Zn)S buffer layer and Zn_1−x Mg_x O window layer, where x is optimized at 0.211. Copyright © 2017 John Wiley & Sons, Ltd.     

Epitaxial Growth of Branched α‐Fe2O3/SnO2 Nano‐Heterostructures with Improved Lithium‐Ion Battery Performance

We report the synthesis of a novel branched nano‐heterostructure composed of SnO₂ nanowire stem and α‐Fe₂O₃ nanorod branches by combining a vapour transport deposition and a facile hydrothermal method. The epitaxial relationship between the branch and stem is investigated by high resolution transmission electron microscopy (HRTEM). The SnO₂ nanowire is determined to grow along the [101] direction, enclosed by four side surfaces. The results indicate that distinct crystallographic planes of SnO₂ stem can induce different preferential growth directions of secondary nanorod branches, leading to six‐fold symmetry rather than four‐fold symmetry. Moreover, as a proof‐of‐concept demonstration of the function, such α‐Fe₂O₃/SnO₂ composite material is used as a lithium‐ion batteries (LIBs) anode material. Low initial irreversible loss and high reversible capacity are demonstrated, in comparison to both single components. The synergetic effect exerted by SnO₂ and α‐Fe₂O₃ as well as the unique branched structure are probably responsible for the enhanced performance.