Overcoming the poor short wavelength spectral response of CdS/CdTe photovoltaic modules via luminescence down‐shifting: ray‐tracing simulations

The short‐wavelength response of cadmium sulfide/cadmium telluride (CdS/CdTe) photovoltaic (PV) modules can be improved by the application of a luminescent down‐shifting (LDS) layer to the PV module. The LDS layer contains a mixture of fluorescent organic dyes that are able to absorb short‐wavelength light of λ < 540 nm, for which the PV module exhibited low external quantum efficiency (EQE), and re‐emit it at a longer wavelength (λ > 540 nm), where the solar cell EQE is high. Ray‐tracing simulations indicate that a mixed LDS layer containing three dyes could lead to an increase in the short‐circuit current density from J_sc = 19.8 mA/cm² to J_sc = 22.9 mA/cm² for a CdS/CdTe PV module. This corresponds to an increase in conversion efficiency from 9.6% to 11.2%. This indicates that a relative increase in the performance of a production CdS/CdTe PV module of nearly 17% can be expected via the application of LDS layers, possibly without any making any alterations to the solar cell itself. Copyright © 2006 John Wiley & Sons, Ltd.     

High voltage photovoltaic mini‐modules

This work describes the design, simulation, fabrication process, and characterization of high voltage photovoltaic mini‐modules using silicon on insulator (SOI) wafers. The mini‐modules are made of a number of small area photovoltaic cells (<1 mm²) monolithically connected in series. Isolation between cells is performed by means of anisotropic etching of the active layer of the SOI wafer. Measurements using standard sunlight (AM1·5 100 mW/cm²) confirm the viability of this technology to fabricate small area arrays showing open circuit voltages, V _oc, between 620 mV and 660 mV and photocurrent densities up to 22·3 mA/cm² for single cells of 0·225 mm² area and 10 µm active film thickness. Series connection scales up V _oc and the maximum power, P _m, from 625 mV and 21·2 µW, respectively, in a single cell to 103 V and 3·2 mW when 169 cells are connected in series in a 0·42 cm² module total area. Copyright © 2008 John Wiley & Sons, Ltd.     

Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applications

This paper details the preliminary findings of a study to achieve a durable thin-film CdTe photovoltaic (PV) device structure on ultrathin space-qualified cover glass. An aluminum-doped zinc oxide (AZO) transparent conducting oxide was deposited directly onto the cover glass using metalorganic chemical vapor deposition (MOCVD). The AZO demonstrated low sheet resistance of 10 Ω/□ and high optical transparency of 85% as well as excellent adherence and environmental stability. Preliminary deposition of PV layers onto the AZO on cover glass, by MOCVD, showed the possibility of such a structure, yielding a device conversion efficiency of 7.2%. High series resistance (10 Ω cm²) and low V _oc (586 mV) were identified as the limiting factors when compared with the authors’ platform process on indium tin oxide-coated aluminosilicate. The coverage of the Cd_1?x Zn _x S window layer along with the front contacting of the device were shown to be the major causes of the low efficiency. Further deposition of AZO/CdTe employing an oxygen plasma cleaning step to the cover glass and evaporated gold front contacts significantly improved the device performance. With a highest conversion efficiency of 10.2%, series resistance improved to 4.4 Ω cm², open-circuit voltage (V _oc) up to 667 mV, and good adhesion, this represents the first demonstration of direct deposition of CdTe solar cells onto 100-μm-thick space-qualified cover glass.     

Optimization of vapor post‐deposition processing for evaporated CdS/CdTe solar cells

The effects of thermal annealing in conjunction with CdCl₂ vapor heat treatment on the properties of CdTe/CdS thin films and devices deposited by physical vapor deposition are reported. Results are compared for three treatment variations: high‐temperature anneal only, high‐temperature anneal followed by CdCl₂ vapor heat treatment and CdCl₂ vapor heat treatment only. X‐ray diffraction, transmission electron microscopy and scanning electron microscopy show improved crystallographic properties of the CdTe film and reduced CdS/CdTe interdiffusion when a high‐temperature anneal is used prior to CdCl₂ treatment. The CdTe/CdS solar cells fabricated using an anneal at 550°C in argon prior to the CdCl₂ vapor heat treatment exhibited improved electrical characteristics compared to cells fabricated with no anneal step, yielding an open‐circuit voltage exceeding 850 mV. Copyright © 1999 John Wiley & Sons, Ltd.     

Life‐cycle assessment of photovoltaic modules: Comparison of mc‐Si,InGaP and InGaP/mc‐Si solar modules

A higher conversion efficiency of photovoltaic modules does not automatically imply a lower environmental impact, when the life‐cycle of modules is taken into account. An environmental comparison is carried out between the production and use phase, except maintenance, of an indium–gallium–phosphide (InGaP) on multicrystalline silicon (mc‐Si) tandem module, a thin‐film InGaP cell module and a mc‐Si module. The evaluation of the InGaP systems was made for a very limited industrial production scale. Assuming a fourfold reuse of the GaAs substrates in the production of the thin‐film InGaP (half) modules, the environmental impacts of the tandem module and of the thin‐film InGaP module are estimated to be respectively 50 and 80% higher than the environmental impact of the mc‐Si module. The energy payback times of the tandem module, the thin‐film InGaP module and the mc‐Si module are estimated to be respectively 5.3, 6.3 and 3.5 years. There are several ways to improve the life‐cycle environmental performance of thin‐film InGaP cells, including improved materials efficiency in production and reuse of the GaAs wafer and higher energy efficiency of the metalorganic chemical vapour deposition process. Copyright © 2003 John Wiley & Sons, Ltd.     

Effect of window layer composition in Cd1−xZnxS/CdTe solar cells

To improve CdS/CdTe cell/module efficiencies, CdS window layer thinning is commonly applied despite the risk of increased pin‐hole defects and shunting. An alternative approach is to widen the band gap of the window layer (2.42 eV for CdS) via alloying, for example, by forming compositions of Cd_1−xZn_xS. In this study, the performance of Cd_1−xZn_xS/CdTe thin‐film solar cells has been studied as a function of x (from x = 0 to 0.9), widening the window layer band gap up to and over 3.4 eV. Optimum Cd_1−xZn_xS compositions were clearly identified to be around x = 0.7, and limitations to the achievable photocurrent and conversion efficiencies have been addressed. Copyright © 2012 John Wiley & Sons, Ltd.     

Quantum‐Dot‐Functionalized Poly(styrene‐co‐acrylic acid) Microbeads: Step‐Wise Self‐Assembly,Characterization, and Applications for Sub‐femtomolar Electrochemical Detection of DNA Hybridization

A novel nanoparticle label capable of amplifying the electrochemical signal of DNA hybridization is fabricated by functionalizing poly(styrene‐co‐acrylic acid) microbeads with CdTe quantum dots. CdTe‐tagged polybeads are prepared by a layer‐by‐layer self‐assembly of the CdTe quantum dots (diameter = 3.07 nm) and polyelectrolyte on the polybeads (diameter = 323 nm). The self‐assembly procedure is characterized using scanning and transmission electron microscopy, and X‐ray photoelectron, infrared and photoluminescence spectroscopy. The mean quantum‐dot coverage is (9.54 ± 1.2) × 10³ per polybead. The enormous coverage and the unique properties of the quantum dots make the polybeads an effective candidate as a functionalized amplification platform for labelling of DNA or protein. Herein, as an example, the CdTe‐tagged polybeads are attached to DNA probes specific to breast cancer by streptavidin–biotin binding to construct a DNA biosensor. The detection of the DNA hybridization process is achieved by the square‐wave voltammetry of Cd²⁺ after the dissolution of the CdTe tags with HNO₃. The efficient carrier‐bead amplification platform, coupled with the highly sensitive stripping voltammetric measurement, gives rise to a detection limit of 0.52 fmol L^?1 and a dynamic range spanning 5 orders of magnitude. This proposed nanoparticle label is promising, exhibits an efficient amplification performance, and opens new opportunities for ultrasensitive detection of other biorecognition events.     

World‐record Cu(In,Ga)Se2‐based thin‐film sub‐module with 17.4% efficiency

We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se₂‐based photovoltaic sub‐modules of 17.4% (aperture area). The record efficiency of the 16 cm², monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. The record device is the result of extensive co‐optimization of all processing steps. During the optimization process, strong focus has been put on the scalability of processes to cost‐effective mass production, as reflected, for example, in Cu(In,Ga)Se₂ deposition time and substrate temperature. Device manufacturing as well as results of electrical and material characterization is discussed. Copyright © 2012 John Wiley & Sons, Ltd.     

Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition

Results of large-area (up to 1000 cm²/run) Cd_1-xZn_xTe heteroepitaxy on both GaAs and GaAs/Si substrates by metalorganic chemical vapor deposition (MOCVD) are presented. Cd_1-xZn_xTe (x = 0-0.1) films exhibited specular surface morphology, 1% thickness uniformity (standard deviation), and compositional uniformity (Δx) of ±0.002 over 100 mm diam substrates. For selected substrate orientations and deposition conditions, the only planar defects exhibited by (lll)B Cd_1-xZn_xTe/GaAs/Si films were lamella twins parallel to the CdTe/GaAs interface; these do not propagate through either the Cd_1-xZn_xTe layer or subsequently deposited liquid phase epitaxy (LPE) HgCdTe layer(s). Background Ga and As-impurity levels for Cd_1-xZn_xTe on GaAs/Si substrates were below the secondary ion mass spectroscopy detection limit. Preliminary results of HgCdTe liquid phase epitaxy using a Te-rich melt on Si-based substrates resulted in x-ray rocking curve linewidths as narrow as 72 arc-sec and etch-pit densities in the range 1 to 3 x 10⁶ cm².     

III‐Vs at scale: a PV manufacturing cost analysis of the thin film vapor–liquid–solid growth mode

The authors present a manufacturing cost analysis for producing thin‐film indium phosphide modules by combining a novel thin‐film vapor–liquid–solid (TF‐VLS) growth process with a standard monolithic module platform. The example cell structure is ITO/n‐TiO₂/p‐InP/Mo. For a benchmark scenario of 12% efficient modules, the module cost is estimated to be $0.66/W(DC) and the module cost is calculated to be around $0.36/W(DC) at a long‐term potential efficiency of 24%. The manufacturing cost for the TF‐VLS growth portion is estimated to be ~$23/m², a significant reduction compared with traditional metalorganic chemical vapor deposition. The analysis here suggests the TF‐VLS growth mode could enable lower‐cost, high‐efficiency III‐V photovoltaics compared with manufacturing methods used today and open up possibilities for other optoelectronic applications as well. Copyright © 2016 John Wiley & Sons, Ltd.     

Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules

We analyze the potential cost competitiveness of two frameless, glass–glass thin‐film tandem photovoltaic module structures, cadmium telluride (CdTe)/CuInSe₂ (CIS) and CuIn_0.3Ga_0.7Se₂ (CIGS)/CIS, based on the demonstrated cost of manufacturing the respective component cell technologies in high volume. To consider multiple economic scenarios, we base the CdTe/CIS module efficiency on the current industrial production of CdTe modules, while for CIGS/CIS, we use an aspirational estimate for CIGS efficiency. We focus on four‐terminal mechanically stacked structures, thus avoiding the need to achieve current matching between the two cells. The top cell in such a tandem must have a transparent back contact, which has not been successfully implemented to date. However, for the purpose of understanding the economic viability of both tandems, we assume that this can be implemented at a cost similar to that of sputtered indium tin oxide. The cost of both tandem module structures was found to be nearly identical on an equal‐area basis and approximately $30/m² higher than the single‐junction alternatives. Both tandem modules are about 4% (absolute) more efficient than a module by using the top‐cell material alone. We find that these tandem modules might reduce total system cost by as much as 11% in applications having a high area‐related balance‐of‐system cost, such as area‐constrained residential systems; however, the relative advantage of tandems decreases in the cases where balance‐of‐system costs are lower, such as in commercial and utility scale systems. Copyright © 2017 John Wiley & Sons, Ltd.     

Self‐Powered Sensors Enabled by Wide‐Bandgap Perovskite Indoor Photovoltaic Cells

A new approach to ubiquitous sensing for indoor applications is presented, using low‐cost indoor perovskite photovoltaic cells as external power sources for backscatter sensors. Wide‐bandgap perovskite photovoltaic cells for indoor light energy harvesting are presented with the 1.63 and 1.84 eV devices that demonstrate efficiencies of 21% and 18.5%, respectively, under indoor compact fluorescent lighting, with a champion open‐circuit voltage of 0.95 V in a 1.84 eV cell under a light intensity of 0.16 mW cm^?2. Subsequently, a wireless temperature sensor self‐powered by a perovskite indoor light‐harvesting module is demonstrated. Three perovskite photovoltaic cells are connected in series to create a module that produces 14.5 µW output power under 0.16 mW cm^?2 of compact fluorescent illumination with an efficiency of 13.2%. This module is used as an external power source for a battery‐assisted radio‐frequency identification temperature sensor and demonstrates a read range by of 5.1 m while maintaining very high frequency measurements every 1.24 s. The combined indoor perovskite photovoltaic modules and backscatter radio‐frequency sensors are further discussed as a route to ubiquitous sensing in buildings given their potential to be manufactured in an integrated manner at very low cost, their lack of a need for battery replacement, and the high frequency data collection possible.     

Long‐term transient and metastable effects in cadmium telluride photovoltaic modules

Thin‐film cadmium telluride (CdTe) photovoltaic (PV) technology is poised to begin making significant contributions and impact on terrestrial, electric power generation. However, some outstanding issues such as stability and transient behavior, and their impact on reliability and assessment of performance, remain to be thoroughly addressed, which has prompted some unease among PV industry integrators toward deploying this technology. We explore the issues of long‐term stability and transient behavior in the performance of CdTe modules herein, using data acquired from indoor light‐soaking studies. We find that measurement of current‐voltage parameters and their temperature coefficients are entangled with transient effects. Changes in module power depend on recent operating history, such as electrical bias, and can result in either artificially high or low performance. Both the open‐circuit voltage (V_OC) and fill factor (FF) are significantly impacted by metastable behavior that appears to linger for up to tens of hours, and we observe such increased transient effects after modules have undergone several hundred hours of light exposure. We present and analyze data measured under standard reporting conditions and actual operating conditions for six CdTe modules light‐exposed and stressed at 65°C nominal temperatures. Copyright © 2006 John Wiley & Sons, Ltd.     

13·9%‐efficient CdTe polycrystalline thin‐film solar cells with an infrared transmission of ∼50%

To fabricate a high‐efficiency polycrystalline thin‐film tandem cell, the most critical work is to make a high‐efficiency top cell ( > 15%) with high bandgap (E_g = 1·5–1·8 eV) and high transmission (T > 70%) in the near‐infrared (NIR) wavelength region. The CdTe cell is one of the candidates for the top cell, because CdTe state‐of‐the‐art single‐junction devices with efficiencies of more than 16% are available, although its bandgap (1·48 eV) is slightly lower for a top cell in a current‐matched dual‐junction device. In this paper, we focus on the development of a: (1) thin, low‐bandgap Cu_xTe transparent back‐contact; and (2) modified CdTe device structure, including three novel materials: cadmium stannate transparent conducting oxide (TCO), ZnSnO_x buffer layer, and nanocrystalline CdS:O window layer developed at NREL, as well as the high‐quality CdTe film, to improve transmission in the NIR region while maintaining high device efficiency. We have achieved an NREL‐confirmed 13·9%‐efficient CdTe transparent solar cell with an infrared transmission of ∼50% and a CdTe/CIS polycrystalline mechanically stacked thin‐film tandem cell with an NREL‐confirmed efficiency of 15·3%. Copyright © 2005 John Wiley & Sons, Ltd.     

Enhanced Omnidirectional Photovoltaic Performance of Solar Cells Using Multiple‐Discrete‐Layer Tailored‐ and Low‐Refractive Index Anti‐Reflection Coatings

An optimized four‐layer tailored‐ and low‐refractive index anti‐reflection (AR) coating on an inverted metamorphic (IMM) triple‐junction solar cell device is demonstrated. Due to an excellent refractive index matching with the ambient air by using tailored‐ and low‐refractive index nanoporous SiO₂ layers and owing to a multiple‐discrete‐layer design of the AR coating optimized by a genetic algorithm, such a four‐layer AR coating shows excellent broadband and omnidirectional AR characteristics and significantly enhances the omnidirectional photovoltaic performance of IMM solar cell devices. Comparing the photovoltaic performance of an IMM solar cell device with the four‐layer AR coating and an IMM solar cell with the conventional SiO₂/TiO₂ double layer AR coating, the four‐layer AR coating achieves an angle‐of‐incidence (AOI) averaged short‐circuit current density, J_SC, enhancement of 34.4%, whereas the conventional double layer AR coating only achieves an AOI‐averaged J_SC enhancement of 25.3%. The measured reflectance reduction and omnidirectional photovoltaic performance enhancement of the four‐layer AR coating are to our knowledge, the largest ever reported in the literature of solar cell devices.     

Parallel‐connected monolithic dye‐sensitised solar modules

Light‐soaking and high‐temperature storage testing of monolithic dye‐sensitised solar modules with total area module efficiencies above 5% have been performed. Our experiences from the development of a four‐layer monolithic dye‐sensitised solar test cell for comparative testing of material components for dye‐sensitised solar cells have directed our module development to a novel device design consisting of parallel‐connection of individual monolithic cells. The results from the accelerated testing of the modules (total area of 17.0 cm²) with four parallel‐connected cells (active area of 3.38 cm²/cell) are equivalent to those obtained for the monolithic single test cells when using identical device components. The successful transfer from cell to module stability is an important milestone in our ambition to develop a low‐cost Photovoltaic (PV) technology. Moreover, our results indicate that intensified research and development to define the procedures for relevant accelerated testing of dye‐sensitised solar modules is urgently required. Copyright © 2010 John Wiley & Sons, Ltd.     

High‐Efficient Deep‐Blue Light‐Emitting Diodes by Using High Quality ZnxCd1‐xS/ZnS Core/Shell Quantum Dots

High‐quality violet‐blue emitting Zn_xCd_1‐xS/ZnS core/shell quantum dots (QDs) are synthesized by a new method, called “nucleation at low temperature/shell growth at high temperature”. The resulting nearly monodisperse Zn_xCd_1‐xS/ZnS core/shell QDs have high PL quantum yield (near to 100%), high color purity (FWHM) <25 nm), good color tunability in the violet‐blue optical window from 400 to 470 nm, and good chemical/photochemical stability. More importantly, the new well‐established protocols are easy to apply to large‐scale synthesis; around 37 g Zn_xCd_1‐xS/ZnS core/shell QDs can be easily synthesized in one batch reaction. Highly efficient deep‐blue quantum dot‐based light‐emitting diodes (QD‐LEDs) are demonstrated by employing the Zn_xCd_1‐xS/ZnS core/shell QDs as emitters. The bright and efficient QD‐LEDs show a maximum luminance up to 4100 cd m^?2, and peak external quantum efficiency (EQE) of 3.8%, corresponding to 1.13 cd A^?1 in luminous efficiency. Such high value of the peak EQE can be comparable with OLED technology. These results signify a remarkable progress, not only in the synthesis of high‐quality QDs but also in QD‐LEDs that offer a practicle platform for the realization of QD‐based violet‐blue display and lighting.     

Light‐enhanced surface passivation of TiO2‐coated silicon

Titanium dioxide is shown to afford good passivation to non‐diffused silicon surfaces and boron‐diffused surfaces after a low‐temperature anneal. The passivation most likely owes to the significant levels of negative charge instilled in the films, and passivation is enhanced by illumination—advantageous for solar cells—indicating that a titanium dioxide photoreaction is at least partly responsible for the low surface recombination. We demonstrate a surface recombination velocity of less than 30 cm/s, on a 5‐Ω cm n‐type silicon, and an emitter saturation current density of 90 fA/cm² on a 200‐Ω/sq boron diffusion. If these titanium dioxide passivated boron‐diffused surfaces were employed in a crystalline silicon solar cell, an open‐circuit voltage as high as 685 mV could be achieved. Given that TiO₂ has a high refractive index and was deposited with atmospheric pressure chemical vapour deposition, an inexpensive technique, it has the potential as a passivating antireflection coating for industrial boron‐diffused silicon solar cells. Copyright © 2011 John Wiley & Sons, Ltd.     

Unveiling the Nanoparticle‐Seeded Catalytic Nucleation Kinetics of Perovskite Solar Cells by Time‐Resolved GIXS

Recently, a new seeding growth approach for perovskite thin films is reported to significantly enhance the device performance of perovskite solar cells. This work unveils the intermediate structures and the corresponding growth kinetics during conversion to perovskite crystal thin films assisted by seeding PbS nanocrystals (NCs), using time‐resolved grazing‐incidence X‐ray scattering. Through analyses of time‐resolved crystal formation kinetics obtained from synchrotron X‐rays with a fast subsecond probing time resolution, an important “catalytic” role of the seed‐like PbS NCs is clearly elucidated. The perovskite precursor‐capped PbS NCs are found to not only accelerate the nucleation of a highly oriented intermediate phase, but also catalyze the conversion of the intermediate phase into perovskite crystals with a reduced activation energy E_a = 47 (±5) kJ mol^?1, compared to 145 (±38) kJ mol^?1 for the pristine perovskite thin film. The reduced E_a is attributed to a designated crystal lattice alignment of the perovskite nanocrystals with perovskite cubic crystals; the pivotal heterointerface alignment of the perovskite crystals coordinated by the Pb NCs leads to an improved film surface morphology with less pinholes and enhanced crystal texture and thermal stability. These together contribute to the significantly improved photovoltaic performance of the corresponding devices.