Electron‐beam crystallized large grained silicon solar cell on glass substrate

Thin film hetero‐emitter solar cells with large‐grained poly‐silicon absorbers of around 10 µm thickness have been prepared on glass. The basis of the cell concept is electron‐beam‐crystallization of an amorphous or nanocrystalline silicon layer deposited onto a SiC:B layer. The SiC:B layer covers a commercially well available glass substrate, serving as diffusion barrier, contact layer and dopand source. For silicon absorber deposition a low pressure chemical vapour deposition was used. The successively applied e‐beam crystallization process creates poly‐silicon layers with grain sizes up to 1 × 10 mm² with low defect densities. The high electronic quality of the absorber is reflected in open circuit voltages as high as 545 mV, which are realized making use of the well‐developed a‐Si:H hetero‐emitter technology. Copyright © 2011 John Wiley & Sons, Ltd.     

Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin‐film solar cells

Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH₄, SiH₄, B₂H₆ and H₂ gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc‐Si:H) solar cells were examined. By increasing the R_H (H₂/SiH₄) ratio from 90 to 220, the Si―C bond density in the p‐nc‐SiC:H films increased from 5.20 × 10¹⁹ to 7.07 × 10¹⁹/cm³, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p‐nc‐Si:H films. For the films deposited at a high R_H ratio, the Si nanocrystallites with a size of 3–15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p‐nc‐SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p‐nc‐SiC:H films deposited at R_H = 220 were applied in the nc‐Si:H solar cells, a high conversion efficiency of 8.26% (V_oc = 0.53 V, J_sc = 23.98 mA/cm² and FF = 0.65) was obtained compared to 6.36% (V_oc = 0.44 V, J_sc = 21.90 mA/cm² and FF = 0.66) of the solar cells with reference p‐nc‐Si:H films. Further enhancement in the cell performance was achieved using p‐nc‐SiC:H bilayers consisting of highly doped upper layers and low‐level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd.     

A thin‐film silicon solar cell and module

We have developed a new light‐trapping scheme for a thin‐film Si stacked module (Si HYBRID PULS module), where a (a‐Si:H/transparent interlayer/microcrystalline Si) thin‐film was integrated into a large‐area solar cell module. An initial aperture efficiency of 13·1% has been achieved for a 910 × 455 mm Si HYBRID PLUS module, which was independently confirmed by AIST. This is the first report of the independently confirmed efficiency of a large‐area thin‐film Si module with an interlayer. The 19% increase of short‐circuit current of this module was obtained by the introduction of a transparent interlayer that caused internal light‐trapping. A mini‐module was shown to exhibit a stabilized efficiency of 12%. Outdoor performance of a Si HYBRID (a‐Si:H / micro‐crystalline Si stacked) solar cell module has been investigated for over 4 years with two different kinds of module (top and bottom cell limited, respectively). The HYBRID modules limited by the top cell have exhibited a more efficient performance than the modules limited by the bottom cell, in natural sunlight at noon. Copyright © 2005 John Wiley & Sons, Ltd.     

Wire bonding as a cell interconnection technique for polycrystalline silicon thin‐film solar cells on glass

The interconnection of solar cells is a critical part of photovoltaic module fabrication. In this paper, a high‐yield, low‐cost method for interconnecting polycrystalline silicon thin‐film solar cells on glass is presented. The method consists of forming adjacent, electrically isolated groves across the cells using laser scribing, and then forming wire bonds over each laser scribe, resulting in series interconnection of the individual solar cells. Wire bonds are also used to connect the first and last solar cell in the string to external (tabbing) leads, forming a mini‐module. A layer of white paint is then applied, which acts as both an encapsulation layer and an additional back surface reflector. Using this method, an 8·3% efficient mini‐module has been fabricated. By exploiting recent developments in wire bonding technology, it appears that this process can be automated and will be capable of forming solar cell interconnections on large‐area modules within relatively short processing times (∼10 min for a 1 m² module). Copyright © 2010 John Wiley & Sons, Ltd.     

Autodiffusion: a novel method for emitter formation in crystalline silicon thin‐film solar cells

The in situ formation of an emitter in monocrystalline silicon thin‐film solar cells by solid‐state diffusion of dopants from the growth substrate during epitaxy is demonstrated. This approach, that we denote autodiffusion, combines the epitaxy and the diffusion into one single process. Layer‐transfer with porous silicon (PSI process) is used to fabricate n‐type silicon thin‐film solar cells. The cells feature a boron emitter on the cell rear side that is formed by autodiffusion. The sheet resistance of this autodiffused emitter is 330 Ω/□. An independently confirmed conversion efficiency of (14·5 ± 0·4)% with a high short circuit current density of (33·3 ± 0·8) mA/cm² is achieved for a 2 × 2 cm² large cell with a thickness of (24 ± 1) µm. Transferred n‐type silicon thin films made from the same run as the cells show effective carrier lifetimes exceeding 13 µs. From these samples a bulk diffusion length L > 111 µm is deduced. Amorphous silicon is used to passivate the rear surface of these samples after the layer‐transfer resulting in a surface recombination velocity lower than 38 cm/s. Copyright © 2006 John Wiley & Sons, Ltd.     

Broadband light trapping with disordered photonic structures in thin‐film silicon solar cells

We theoretically investigate light trapping with disordered 1D photonic structures in thin‐film crystalline silicon solar cells. The disorder is modelled in a finite‐size supercell, which allows the use of rigorous coupled‐wave analysis to calculate the optical properties of the devices and the short‐circuit current density J_sc. The role of the Fourier transform of the photonic pattern in the light trapping is investigated, and the optimal correlation between size and position disorder is found. This result is used to optimize the disorder in a more effective way, using a single parameter. We find that a Gaussian disorder always enhances the device performance with respect to the best ordered configuration. To properly quantify this improvement, we calculate the Lambertian limit to the absorption enhancement for 1D photonic structures in crystalline silicon, following the previous work for the 2D case [M.A. Green, Progr. Photovolt: Res. Appl. 2002; 10 (4), pp. 235–241]. We find that disorder optimization can give a relevant contribution to approach this limit. Finally, we propose an optimal disordered 2D configuration and estimate the maximum short‐circuit current that can be achieved, potentially leading to efficiencies that are comparable with the values of other thin‐film solar cell technologies. Copyright © 2013 John Wiley & Sons, Ltd.     

Nanoparticle‐enhanced light trapping in thin‐film silicon solar cells

A systematic investigation of the nanoparticle‐enhanced light trapping in thin‐film silicon solar cells is reported. The nanoparticles are fabricated by annealing a thin Ag film on the cell surface. An optimisation roadmap for the plasmon‐enhanced light‐trapping scheme for self‐assembled Ag metal nanoparticles is presented, including a comparison of rear‐located and front‐located nanoparticles, an optimisation of the precursor Ag film thickness, an investigation on different conditions of the nanoparticle dielectric environment and a combination of nanoparticles with other supplementary back‐surface reflectors. Significant photocurrent enhancements have been achieved because of high scattering and coupling efficiency of the Ag nanoparticles into the silicon device. For the optimum light‐trapping scheme, a short‐circuit current enhancement of 27% due to Ag nanoparticles is achieved, increasing to 44% for a “nanoparticle/magnesium fluoride/diffuse paint” back‐surface reflector structure. This is 6% higher compared with our previously reported plasmonic short‐circuit current enhancement of 38%. Copyright © 2011 John Wiley & Sons, Ltd.     

Characterisation of rough reflecting substrates incorporated into thin‐film silicon solar cells

Four different categories of rough reflecting substrates as well as a single periodic grating are incorporated and tested within n‐i‐p type amorphous silicon (a‐Si:H) solar cells. Each category is characterised by its own texture shape; dimensions were varied within the categories. Compared to flat reflecting substrates, gains in short‐circuit current density (J_sc) up to 20% have been obtained on rough reflecting plastic substrates. As long as (1) the characteristic dimensions of the textures are lower than the involved light wavelengths, (2) the textures do not present any defects i.e. as long as they do not have large craters or bumps spread over the surface, the root mean square roughness (δ_RMS) as well as the ratio of average feature height to average period can be used to evaluate the gain in J_sc; if each category of randomly textured substrates is considered separately, the haze factor can be used to estimate δ_RMS and thereby the gains in J_sc. Copyright © 2006 John Wiley & Sons, Ltd.     

CuOx/a‐Si:H heterojunction thin‐film solar cell with an n‐type µc‐Si:H depletion‐assisting layer

We showed that thin n‐type CuO_x films can be deposited by radio‐frequency magnetron reactive sputtering and demonstrated the fabrication of n‐CuO_x/intrinsic hydrogenated amorphous silicon (i‐a‐Si:H) heterojunction solar cells (HSCs) for the first time. A highly n‐doped hydrogenated microcrystalline Si (n‐µc‐Si:H) layer was introduced as a depletion‐assisting layer to further improve the performance of n‐CuO_x/i‐a‐Si:H HSCs. An analysis of the external quantum efficiency and energy‐band diagram showed that the thin depletion‐assisting layer helped establish sufficient depletion and increased the built‐in potential in the n‐CuO_x layer. The fabricated HSC exhibited a high open‐circuit voltage of 0.715 V and an efficiency of 4.79%. Copyright © 2015 John Wiley & Sons, Ltd.     

5% Efficient evaporated solid‐phase crystallised polycrystalline silicon thin‐film solar cells

The first energy conversion efficiencies of over 5% are reported for evaporated solid‐phase crystallised (SPC) polycrystalline silicon thin‐film solar cells. All cells have a size of 2 cm² and are formed on planar glass superstrates. Back surface reflectance is provided by a simple coating with commercial white paint. The best cells have short‐circuit current densities of about 19 mA/cm² and external quantum efficiencies peaking at above 80%. The diffusion length in the base of the solar cells is larger than the base thickness, providing significant room for further efficiency improvements via an increased thickness of the base layer. Additional improvements are expected via the use of textured glass sheets, boosting the light trapping capabilities of the cells. Copyright © 2009 John Wiley & Sons, Ltd.     

Lambertian matched absorption enhancement in PECVD poly‐Si thin film on aluminum induced textured glass superstrates for solar cell applications

This paper examines the effectiveness of a range of aluminum induced textured (AIT) glass topographies at enhancing light absorption in silicon thin film diode structures deposited on the textured glass side, operating in the superstrate configuration. The aluminum layer used to produce the AIT can be deposited either by thermal evaporation or magnetron sputtering. Varying AIT process parameters produces a wide range of feature roughness and uniformity, providing scope to optimize texture effectiveness and process repeatability. We report strong correlation between the degree of absorption enhancement from these textures and both dark field microscope images of the AIT glass and reduction of the interference envelope in spectral reflectance of the deposited silicon films. Our findings corroborate earlier modeling work based on ray tracing, which predicted that the best enhancement occurs when the feature size is close to the film thickness. In this paper we investigate AIT samples in the 1 – 3 µm film thickness range, some of which trap light in silicon as strongly as at the Lambertian limit. Copyright © 2010 John Wiley & Sons, Ltd.     

Polycrystalline silicon thin‐film solar cells on glass by aluminium‐induced crystallisation and subsequent ion‐assisted deposition (ALICIA)

A research project is under way at The University of New South Wales aiming at the realisation of a novel type of polycrystalline silicon thin‐film solar cell on glass. The idea is to first create a thin large‐grained polycrystalline seed layer on glass by aluminium‐induced crystallisation of amorphous silicon and then to epitaxially thicken the seed layer with ion‐assisted deposition. By mid‐2003 this ALICIA project had achieved laboratory cells with voltages of up to 163 mV, as reported elsewhere. In the present paper we give an overview of recent progress (improved Si epitaxy process, improved control of base doping profile due to the use of phosphorus dopants instead of gallium, hydrogen passivation) that has improved the voltages of ALICIA solar cells to 270 mV. Furthermore, the strategy for further voltage improvements is presented. At the present point in time only the voltages of ALICIA cells are known, but obviously solar cells also require current for good efficiency. Hence much improvement in both voltage and current is still needed. Copyright © 2004 John Wiley & Sons, Ltd.     

Silica nanospheres as back surface reflectors for crystalline silicon thin‐film solar cells

In this paper, fabrication of a non‐continuous silicon dioxide layer from a silica nanosphere solution followed by the deposition of an aluminium film is shown to be a low‐cost, low‐thermal‐budget method of forming a high‐quality back surface reflector (BSR) on crystalline silicon (c‐Si) thin‐film solar cells. The silica nanosphere layer has randomly spaced openings which can be used for metal‐silicon contact areas. Using glass/SiN/p⁺nn⁺ c‐Si thin‐film solar cells on glass as test vehicle, the internal quantum efficiency (IQE) at long wavelengths (>900 nm) is experimentally demonstrated to more than double by the implementation of this BSR, compared to the baseline case of a full‐area Al film as BSR. The improved optical performance of the silica nanosphere/aluminium BSR is due to reduced parasitic absorption in the Al film. Copyright © 2007 John Wiley & Sons, Ltd.     

Life‐cycle greenhouse gas effects of introducing nano‐crystalline materials in thin‐film silicon solar cells

Solar PV is widely considered as a “green” technology. This paper, however, investigates the environmental impact of the production of solar modules made from thin‐film silicon. We focus on novel applications of nano‐crystalline Silicon materials (nc‐Si) into current amorphous Silicon (a‐Si) devices. Two nc‐Si specific details concerning the environmental performance can be identified, when we want to compare to a‐Si modules. First, in how far the extra (and thicker) silicon layer (s) affects upstream material requirements and energy use. Second, in how far depositing an extra silicon layer may increase emissions of greenhouse gases as additional emissions of Fluor gases (F‐gases) are associated to this step. The much larger global warming potential of F‐gases (17 200–22 800 times that of CO₂) may lead to higher environmental burdens. To date, no study has yet analyzed the effect of F‐gas usage on the environmental profile of thin‐film silicon solar modules. We performed a life‐cycle assessment (LCA) to investigate the current environmental usefulness of pursuing this novel micromorph concept. The switch to the new micromorph technology will result in a 60–85% increase in greenhouse gas emissions (per generated kWh solar electricity) in case of NF₃ based clean processing, and 15–100% when SF₆ is used. We conclude that F‐gas usage has a substantial environmental impact on both module types, in particular the micromorph one. Also, micromorph module efficiencies need to be improved from the current 8–9% (stabilized efficiency) toward 12–16% (stab. eff.) in order to compensate for the increased environmental impacts. Copyright © 2010 John Wiley & Sons, Ltd.     

Progress with epitaxy wrap‐through crystalline silicon thin‐film solar cells

Wafer‐Equivalents are thin‐film solar cells that use a low‐cost silicon substrate to epitaxially grow a high‐quality crystalline silicon active layer. The epitaxy wrap‐through (EpiWT) cell is a back‐contact version of the Wafer‐Equivalent that aims to increase currents and gain other benefits of back contacts. The EpiWT cell can be made in a symmetrically interdigitated configuration with 50% back emitter coverage, or using an isolation layer to lower the back emitter coverage to ∼10%, which will theoretically increase voltages. The epitaxial deposition through via holes in the substrate depends on many factors, including the sealing of the deposition chamber, and produces various thicknesses and geometrical forms of the layers in the holes. An extended process has been developed to incorporate a passivated selective emitter and the first batch has been fabricated. The best result was an efficiency of 13.2% with ∼22 µm base layer thickness. The results are limited most by the fill factors at this stage, e.g. 75% for this cell, which is due to a processing difficulty encountered with screen‐printing in via holes. A new isolation layer was tested and successfully implemented for the low back‐emitter configuration. Comparable voltages and currents were achieved but the fill factors were lower than for the 50% back emitter cells, resulting in a best efficiency of 11.2%. Copyright © 2011 John Wiley & Sons, Ltd.     

Through‐the‐glass spectroscopic ellipsometry for analysis of CdTe thin‐film solar cells in the superstrate configuration

Polycrystalline CdS/CdTe thin‐film solar cells in the superstrate configuration have been studied by spectroscopic ellipsometry (SE) using glass side illumination. In this measurement method, the first reflection from the ambient/glass interface is rejected, whereas the second reflection from the glass/film‐stack interface is collected; higher order reflections are also rejected. The SE analysis incorporates parameterized dielectric functions ε for solar cell component materials obtained by in situ and variable‐angle SE. In the SE analysis of the complete cells, a step‐wise procedure ranks the fitting parameters, including thicknesses and those defining the spectra in ε, according to their ability to reduce the root‐mean‐square deviation between the simulated and measured SE spectra. The best fit thicknesses from this analysis are found to be consistent with electron microscopy. Based on the SE results, the solar cell quantum efficiency (QE) can be simulated without any free parameters, and comparisons with measured QE enable optical model refinements as well as identification of optical and electronic losses. These capabilities have wide applications in photovoltaic module mapping and in‐line monitoring. Copyright © 2016 John Wiley & Sons, Ltd.     

SHORT COMMUNICATION: Thin‐film free‐standing monocrystalline si solar cells with heterojunction emitter

We propose a novel approach to thin‐film silicon solar cells, namely the freestanding monocrystalline silicon layer transfer process with heterojunction emitter (FMS‐HJ). High crystallographic quality mono‐Si films were deposited on freestanding porous silicon (PS) films by chemical vapor deposition (CVD). These free‐standing mono‐Si (FMS) films were processed into solar cells by creating a‐a‐Si/c‐Si heterojunction. In our preliminary experiments a thin‐film FMS‐HJ solar cell with 9.6% efficiency was realized in a 20‐μμm‐thin active layer. Copyright © 2005 John Wiley & Sons, Ltd.     

Silicon thin‐film solar cells with rectangular‐shaped grating couplers

As an alternative to randomly textured transparent conductive oxides as front contact for thin‐film silicon solar cells the application of transparent grating couplers was studied. The grating couplers were prepared by sputtering of aluminium‐doped zinc oxide (ZnO) on glass substrate, a photolithography and a lift‐off process and were used as periodically textured substrates. The period size and groove depth of these transparent gratings were tuned independently from each other and varied between 1 and 4 μm and 100–600 nm. The optical properties of rectangular‐shaped gratings and the opto‐electronic behaviour of amorphous and microcrystalline silicon solar cells with integrated grating couplers as a function of the grating parameters (period size P and groove depth h_g) are presented. The optical properties of the gratings are discussed with respect to randomly textured substrates and the achieved solar cell results are compared with the opto‐electronic properties of solar cells deposited on untextured (flat) and randomly textured substrates. Copyright © 2005 John Wiley & Sons, Ltd.     

Highly transparent modulated surface textured front electrodes for high‐efficiency multijunction thin‐film silicon solar cells

To further increase the efficiency of multijunction thin‐film silicon (TF‐Si) solar cells, it is crucial for the front electrode to have a good transparency and conduction, to provide efficient light trapping for each subcell, and to ensure a suitable morphology for the growth of high‐quality silicon layers. Here, we present the implementation of highly transparent modulated surface textured (MST) front electrodes as light‐trapping structures in multijunction TF‐Si solar cells. The MST substrates comprise a micro‐textured glass, a thin layer of hydrogenated indium oxide (IOH), and a sub‐micron nano‐textured ZnO layer grown by low‐pressure chemical vapor deposition (LPCVD ZnO). The bilayer IOH/LPCVD ZnO stack guarantees efficient light in‐coupling and light trapping for the top amorphous silicon (a‐Si:H) solar cell while minimizing the parasitic absorption losses. The crater‐shaped micro‐textured glass provides both efficient light trapping in the red and infrared wavelength range and a suitable morphology for the growth of high‐quality nanocrystalline silicon (nc‐Si:H) layers. Thanks to the efficient light trapping for the individual subcells and suitable morphology for the growth of high‐quality silicon layers, multijunction solar cells deposited on MST substrates have a higher efficiency than those on single‐textured state‐of‐the‐art LPCVD ZnO substrates. Efficiencies of 14.8% (initial) and 12.5% (stable) have been achieved for a‐Si:H/nc‐Si:H tandem solar cells with the MST front electrode, surpassing efficiencies obtained on state‐of‐the‐art LPCVD ZnO, thereby highlighting the high potential of MST front electrodes for high‐efficiency multijunction solar cells. Copyright © 2015 John Wiley & Sons, Ltd.