基于CMOS工艺的改进型电流注入混频器

设计了一种改进型电流注入混频器.通过在吉尔伯特混频器电路的本振开关管源极引入电感形成谐振电路,消除了开关管源极寄生电容的影响,降低了混频器电路的闪烁噪声,增大了混频器电路的增益.混频器电路的设计采用SMIC 0.35 μm CMOS 工艺库,本振功率为-3 dBm.仿真结果表明,与改进前的混频器电路相比,当本振功率为-3 dBm时,改进型电流注入混频器电路的增益提高了1.76 dB,IIP3提高2.1 dBm,噪声系数降低了0.5 dB.     

基于CMOS工艺的低噪声、高增益混频器

基于TSMC 0.18μm CMOS工艺,设计了一种低噪声、高增益的混频器.通过在吉尔伯特单元中的跨导级处引入噪声抵消技术以降低混频器的噪声;并且在开关管的源级增加电流注入电路的基础上并联一个电容与开关管共源节点处的寄生电容谐振,进一步降低混频器的噪声,增大电路的增益.仿真结果表明,在本振（LO）频率为2.395 GHz,射频（RF）频率为2.4GHz时,混频器的增益为14.2dB,双边带噪声系数为5.9dB,输入三阶交调点为-3.2dBm.混频器工作电压1.8V,直流电流为8mA.     

2.4GHz 0.35μm CMOS Gilbert下变频器

利用0 35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2 452GHz,2 45GHz和2MHz.测试表明:在3 3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz.测试表明:在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

5.8 GHz CMOS混频器设计

介绍了CMOS混频器主要技术指标的设计思路和技术.采用O.18 μm CMOS工艺,使用Agilent公司的ADS软件设计出一种5.8 GHz CMOS混频器电路,结果表明,工作电压1.8 V时,RF频率5.8 GHz,本振频率5.78 GHz,中频频率20 MHz下,转换增益7.3 dB、输入1 dB压缩点-8.3 dBm,噪声系数8.7,工作电流小于5 mA,该电路已交付流片.     

一种应用于GPS射频前端的低噪声混频器

为了克服混频器噪声对GPS接收机灵敏度造成的影响,设计了一种应用于GPS射频前端的低噪声混频器电路.采用自偏置缓冲级放大本振信号,有效地提高了电路性能.该混频器的转换增益为23 dB,噪声系数为4.55 dB,3阶交调点为-9.36 dBm,在1.57 GHz到1.6 GHz频段上,反射系数S11小于-15 dB,电路采用1.8 V电压供电;混频器核心电路静态工作电流1.2 mA,采用CMOS 0.18 μm工艺实现,芯片版图面积为160μm×360μm.     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器．其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz．测试表明：在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为－11dBm．     

一种高线性的UWB接收机下变频混频器设计

该文介绍了一种UWB下变频混频器的设计思路和技术。在TSMC0.18μmCMOS工艺下,使用Agilent公司的ADS软件设计出一种3~5GHz的CMOS混频器电路。仿真结果表明,工作电压3V时,RF频率为3.169GHz,本振频率为3.434GHz,中频频率为265MHz,转换增益为15.4dB,双边带噪声系数低于13.3dB,P1dB压缩点为-13dBm,工作电流为4.6mA。     

基于LTCC技术的C频段星载接收机混频器

利用低温共烧陶瓷(LowTemperature Co-fired Ceramic,简称LTCC)技术,设计制作了一种可应用于C频段星载接收机的双平衡混频器。该混频器将射频和本振巴伦等无源器件集成在多层LTCC基板内,实现了电路的小型化、高集成度和高可靠性。测试表明,当射频输入为5.925～6.425GHz、本振频率为2.225GHz、中频输出频率为3.7～4.2GHz时,混频器的变频损耗≤9.3dB,P1dB为5.7dBm,本振到射频和本振到中频的隔离度分别为39.44dB和35.58dB。混频器的尺寸为40×22×1.92mm3。     

用于数字相控阵雷达收发组件的0.7~4.0GHz SOI CMOS有源下混频器

基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本振端口VSWR的测试结果在0.7~4.0GHz范围内均小于2,IF端口的VSWR测试结果在25 MHz~1GHz范围内小于2。当差分输出时,该混频器的功率转换增益为10dB,1dB压缩点输出功率为3.3dBm。电源电压为2.5V,静态电流为64mA,芯片面积仅为1.0mm×0.9mm。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks