光开关在分布式光纤温度传感系统的应用研究

分析了决定分布式光纤温度传感器系统传感距离的因素,提出了使用光开关扩展系统的传感长度。设计了多模1×2棱镜光开关的单片机驱动接口,计算机软件通过RS232串行接口发出指令控制光开关的切换。测试结果表明,嵌入了1×2光开关可使系统传感光纤长度延伸为原来的2倍。     

新型超远程分布式光纤拉曼温度传感器

基于光中继传感技术提出一种超远程分布式光纤拉曼温度传感器方案,采用在分布式光纤传感器的多段传感光缆之间嵌入多级光中继放大传感装置的方式,利用中继放大传感装置的增益克服光纤损耗,增强了光纤中自发拉曼散射光的强度,传感光缆分段分时进行测量.当在多段传感光缆之间引入N个远程光中继放大传感装置进行级联时,可实现分布式光纤传感器...     

分布式光纤温度传感器发展状况及趋势

阐述了分布式光纤温度传感技术的研究进展,主要介绍了基于瑞利散射、荧光效应、自发喇曼散射和布里渊效应以及利用掺光纤的分布式光纤温度传感器,并在此基础上分析了分布式光纤温度传感器的发展趋势.     

测温上限达260℃的分布式光纤温度传感器

介绍了研究分布式光纤温度传感器的意义和基于背向拉曼散射的分布式光纤温度传感器的原理、系统组成，并给出了该系统的技术关键，这包括：依据对激光器输出光波长的优化选择笃光电转换用雪崩光二极管雪崩增益的优化设计，提高系统的信噪比；通过超高速Ａ／Ｄ计算机插件的研制，实现微弱信号的数字平均，取代了常规的Ｂｏｘｃａｒ积分器；将普通通讯光纤和包层涂锌特种光纤相结合作传感光纤，将测温上限提高到２６０℃。所研制的分布     

光纤温度传感器的研究和应用

分析了光纤温度传感器在温度探测中的优势,综述了光纤温度传感器的发展现状和应用.分别介绍了分布式光纤温度传感器、光纤光栅温度传感器、干涉型光纤温度传感器、光纤荧光温度传感器和基于弯曲损耗的光纤温度传感器的工作原理和研究现状,详细介绍了各种传感器的特点及各自的研究方向.     

MEMS光开关

采用 MEMS体硅工艺 ,制作了三种结构的微机械光开关 :水平驱动 2 D(二维 )光开关、垂直驱动 2 D光开关和扭摆驱动 2 D、3D(三维 )光开关 .水平驱动光开关采用单层体硅结构 ,另外两种光开关都采用了硅 -玻璃的键合结构 .它们的工作原理都基于硅数字微镜技术 .这三种光开关均采用了静电力驱动 ,具有较低的驱动电压 ,其中扭摆式光开关的驱动电压小于 15 V.对于 2 D开关阵列 ,在硅基上制作了光纤自对准耦合槽 .对后两种光开关的开关特性进行了计算机模拟与分析 ,结果表明这两种光开关具有小于 1ms的开关时间     

MEMS光开关

采用MEMS体硅工艺,制作了三种结构的微机械光开关:水平驱动2D(二维)光开关、垂直驱动2D光开关和扭摆驱动2D、3D(三维)光开关.水平驱动光开关采用单层体硅结构,另外两种光开关都采用了硅-玻璃的键合结构.它们的工作原理都基于硅数字微镜技术.这三种光开关均采用了静电力驱动,具有较低的驱动电压,其中扭摆式光开关的驱动电压小于15V.对于2D开关阵列,在硅基上制作了光纤自对准耦合槽.对后两种光开关的开关特性进行了计算机模拟与分析,结果表明这两种光开关具有小于1ms的开关时间.     

用于测量空间温度场的分布式光纤传感器的系统设计

文中首先介绍了喇曼散射，并对分布式光纤温度传感器进行了理论分析，最后着重介绍我们研制的一种能够实际使用的喇曼散射分布式光纤温度传感器系统的设计和应用。     

提高分布式温度传感器测温准确度的降噪方法

为了减小拉曼散射光波长相关损耗、光电探测器附加噪声及散射光中的瑞利噪声对分布式光纤温度传感器测温误差的影响,通过分析分布式光纤温度传感系统的解调原理提出了一种反斯托克斯光降噪方法。将光纤按照环形结构铺设,以每次测量的反斯托克斯光信号中菲涅耳反射峰后的基底噪声平均值作为动态本底噪声,利用两段处于不同温度的光纤消除动态本底噪声后的瑞利噪声。反斯托克斯光降噪解调法从原理上避免了参考斯托克斯光引入的测温误差,消除了本底噪声和瑞利噪声导致的测温误差。实验结果表明,修正的分布式光纤温度传感系统的最大测温误差从5.4℃降低到0.6℃,测温准确度有明显提高。     

用于测量空间温度场的分布式光纤传感器的系统设计

文中首先介绍了喇曼散射，并对分布式光纤温度传感器进行理论分析，最后着重介绍我们研制的一种能够实际使用的喇曼散射分布式光纤温度传感器系统的设计和应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.