三阶色散对拉曼频移的增强和抑制作用

基于光子晶体光纤(PCF)中脉冲演变遵循的非线性演化方程,用数值方法研究了三阶色散(TOD)对孤子拉曼自频移(RIFS)的影响.结果表明,在反常色散区,正的三阶色散对孤子拉曼自频移有抑制作用,而负的三阶色散却对频移有增强作用.当输入脉冲较窄,色散波产生的距离较短时,由于频谱反弹效应,三阶色散对频移增强的作用在光纤的零色散波长处会被抑制.输入脉冲的峰值功率和形状对拉曼频移被抑制所需光纤的长度有重要的影响.在正常色散区,三阶色散对拉曼频移的影响可忽略不计.     

双零色散点光子晶体光纤中红移辐射的产生

为了研究双零色散点光子晶体光纤反常色散区中红移辐射的产生,采用分步傅里叶方法数值模拟了飞秒脉冲在双零色散点光子晶体光纤反常色散区中的非线性传输和红移辐射的产生。分析了抽运脉冲的脉宽、抽运波长、入射峰值功率对红移辐射的影响。结果表明,当超短脉冲靠近第2个零色散点的反常色散区进行抽运时,喇曼孤子受高阶色散效应的影响产生了红移辐射现象;当增大抽运激光的入射峰值功率或增大脉宽时,红移辐射均增强,而且发生了明显的分裂现象,其起因可归结于喇曼孤子和红移辐射之间的交叉相位调制;此外,3阶色散效应对红移辐射也有重要的影响,当增大3阶色散系数时,红移辐射可得到进一步加强。     

高阶效应对微结构光纤中超连续谱产生的影响

采用分布傅立叶方法求解了广义非线性薛定谔方程（GNSE）,数值模拟了飞秒激光脉冲在微结构光纤中的非线性传输和超连续谱的产生,详细分析了脉冲拉曼散射、自陡峭效应以及三阶色散对超连续光谱产生的影响。分析结果表明：超短脉冲在微结构光纤中传输时出现孤子自频移现象,同时也发现脉冲内拉曼散射和自相位调制的联合作用导致高阶孤子分裂,光谱得到极大展宽,在时域中出现两个滞后的拉曼孤子,三阶色散和自陡效应对光谱的形状影响较小,起着与脉冲内拉曼散射相反的作用,自陡效应比三阶色散效应对光脉冲的影响大一些。     

高阶色散和高阶非线性效应对准光孤子传输的影响

为了研究高阶色散和高阶非线性效应对其在普通光纤上传输的影响,用数值模拟的方法研究了三阶色散、自陡效应和脉冲内拉曼散射效应对准光孤子传输的影响.结果表明准光孤子在实际的普通光纤中传输时,三阶色散、自陡效应和脉冲内拉曼散射效应中,冲内拉曼效应对其传输产生的影响比较大,致使准光孤子在普通光纤上传输时脉冲不断展宽,脉冲峰值功率降低,不能长距离保持脉冲形状不变.     

自陡效应对飞秒脉冲光束自聚焦特性的影响

为了研究在非线性正常色散介质中,自陡效应对高强度飞秒脉冲光束自聚焦特性的影响,同时考虑色散、时空聚焦和克尔效应。基于(3+1)维的修正非线性薛定谔方程,采用对称分步傅里叶数值计算方法,分不考虑自陡效应即只有色散、时空聚焦及克尔效应和考虑自陡效应两种情况,对90fs超短脉冲光束的自聚焦特性进行了数值仿真。结果表明,色散、时空聚焦和克尔效应的共同作用会使脉冲分裂成丝,能量减少,脉冲展宽,时空聚焦和色散的相关性使脉冲产生了另一延迟,延迟和传输距离及色散成正比;而自陡效应则可以明显降低脉冲峰值强度,减弱非线性的影响,抑制脉冲自聚焦,使时间波形分裂更小,对脉冲延迟量影响较小。     

孤子间互作用相对间距与相位关系的解析分析

基于光孤子脉冲在光纤中传输所遵从的非线性薛定谔(NLS)方程,在忽略三阶以上色散效应、自陡和自频移效应并通过对方程中相关参量的无量纲化处理之后,得到了总光元场满足的微扰NLS方程,分析了孤子相对间距与初始相位对其传输的影响。     

基于光子晶体光纤和飞秒激光源的近红外波段宽带孤子和可见区高效色散波产生的实验

将钛宝石激光器产生的飞秒激光脉冲泵浦实验室自制的高非线性双折射光子晶体光纤,脉冲的中心波长为820 nm,位于光子晶体光纤的接近于零色散的反常色散区.实验结果表明:随着泵浦功率的增加,一阶孤子的中心波长发生了红移,同时产生的色散波的中心波长则发生蓝移进入可见光区.当泵浦功率达到0.45 W时,色散波与残余泵浦的输出功率比为42.67,色散波的带宽达到81 nm,而处于近红外波段的红移孤子带宽可达231 nm.利用高非线性光子晶体光纤产生近红外波段宽带孤子和可见区高效色敬波的实验对飞秒激光频率转换和光谱展宽具有很好的借鉴意义.     

自变陡效应与色散缓变光纤中的调制不稳定性

研究了自变陡效应对色散缓变光纤中光脉冲的调制不稳定性的影响。发现自变陡效应使增益谱的谱宽变窄、振幅的增长速度减慢,而且其影响程度与色散缓变参量有关。当选取色散缓变参量为某一最佳值时,增益谱的谱宽最宽;当色散缓变参量、光纤损耗及传输距离满足另一特定关系式时,调制不稳定性不再发生,光脉冲达到稳定传输。     

色散缓变光纤中Raman孤子自频移效应的研究

利用绝热扰动法研究了色散缓变光纤中Ｒａｍａｎ孤子自频移效应，得到了色散缓变光纤中Ｒａｍａｎ孤子自频移的表达式。结果表明：光纤色散变化率存在一个可以有效抑制孤子自频移的阈值，当光纤色散变化率大于这个阈值时，色散缓变光纤可以抑制孤子自频移，而当光纤色散变化率小于这个阈值时，色散缓变光纤不仅不能抑制孤子自频移，反而加剧孤子自频移。     

光子晶体光纤中高阶色散和非线性对压缩脉冲对的影响

数值模拟了光子晶体光纤中波长位于反常色散区的高阶孤子泵浦脉冲与波长在正常色散区的信号脉冲通过交叉相位调制作用,产生的压缩脉冲对.首先讨论了在高阶色散影响下,飞秒脉冲基于交叉相位作用,弱脉冲产生的压缩脉冲对不再保持对称不变,产生蓝移.此外,考虑高阶非线性效应的影响,飞秒信号脉冲从正常色散区频移到反常色散区,产生的压缩脉冲由两个演变成一个,受拉曼红移影响较大,同时脉冲的峰值功率显著增加.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first