雷达

TN95 00021468频率分集技术对宽带毫米波雷达目标角闪烁的抑制/孙文峰,何松华,赵宏钟(国防科技大学)11现代雷达一1 999,21(2)一12一5,27角闪烁误差是影响毫米波导引头末制导阶段雷达跟踪精度的主要因素,必须对其进行抑制.频率分集技术抑制目标角闪烁的有效性,取决于去除脉间相关性的性能,即要求雷达发射信号必须有较大的频率间隔,宽带毫米波雷达正好满足了这一常规微波雷达不能满足的要求.文中将复杂目标后向散射回波近似为目标上若干强散射中心回波的合成,结合几何光学法得到了某种飞机目标的确定性模型,并用该模型评定频率分集对角闪烁抑…     

基于频率捷变的单脉冲雷达角闪烁抑制方法

角闪烁是雷达目标后向散射特性的重要物理量,它能严重降低毫米波末制导雷达的导引精度,影响雷达三维成像的质量。本文针对宽带毫米波雷迭角跟踪中的角闪烁问题,研究了一种利用频率捷变技术获取目标回波信号的多个独立样本来抑制角闪烁的方法。仿真结果证实了该方法的有效性。     

毫米波雷达高分辨抑制角闪烁试验研究

角闪烁是影响毫米波末制导雷达角跟踪精度的主要因素之一,可能致使脱靶量增加,甚至导致目标丢失。然而目前关于角闪烁的研究主要基于理论分析、建模和仿真,试验研究相对较少。本文首先简述了角闪烁产生的机理,分析了角闪烁的特征,然后总结了抑制角闪烁的常用方法,并阐述了高分辨雷达抑制角闪烁的原理,开展了毫米波单脉冲雷达角闪烁试验,最后利用室内试验结果验证了高分辨可有效抑制目标上多散射中心间相互干涉引起的角闪烁。     

闪烁现象下基于微动补偿的旋转叶片参数估计方法

目标旋转叶片的微动特征对雷达目标识别有重要意义,但当雷达回波中存在强闪烁现象时难以测量微动参数。针对此问题,提出了一种调频连续毫米波雷达在闪烁现象下的微动补偿参数估计方法。首先建立了调频连续波雷达的旋转散射点回波模型,由线积分得到旋转叶片雷达基带回波信号的解析形式,分析了闪烁现象产生机理和特征。然后,考虑到回波信号所具有的周期性脉冲特征,构造了基于周期脉冲模型的微动参数补偿算子对回波信号进行参数补偿。最后,检测补偿后信号能量峰值完成了旋转叶片微动参数的估计。仿真和实测数据的实验结果表明,所提方法在强闪烁现象下对旋转叶片的旋转频率、旋转长度和初始旋转角具有较高的参数估计精度。     

虚拟跳频抑制高频地波雷达角闪烁

本文基于高频地波雷达的实现原理,和目标角闪烁的基本原理,对雷达回波信号采用虚拟跳频的处理方式来抑制目标角闪烁.由模拟和实测数据实验证明,该处理方式既不影响点目标的回波信息,又对复杂散射目标有明显的角闪烁抑制,并且该处理方式的计算量开销小,完全可以用于实际工程.     

毫米波单脉冲实验跟踪雷达

引言为满足避开障碍所要求的高精度、低仰角跟踪和多目标分辨的需要,导致我们研究射频频谱在毫米波波段范围内工作的雷达。雷达设计师特别感兴趣的是毫米波雷达系统在杂波环境下,高精度跟踪目标方面所呈现的固有优点。毫米波雷达系统的优点中包括改进目标分辨率,速度灵敏度及精确度。以毫米波波长跟踪复杂目标时,要求详细了解目标的回波起伏特性及其可能被淹没的杂波环境。目标的回波起伏特征随其形状,视场角,散射中心以及材料结构而变化,其     

毫米波雷达单脉冲跟踪系统仿真技术

针对宽带毫米波雷达中的目标角跟踪问题,介绍了一种毫米波雷达单脉冲跟踪仿真系统.该系统模拟了导弹高速跟踪面目标的角闪烁情况,并采用高距离分辨率的α-β距离滤波和频率捷变角度平滑进行了跟踪处理.结果表明该仿真系统较好地抑制了面目标的角闪烁,提高了单脉冲跟踪精度,对解决面目标的导弹跟踪问题具有实际意义.     

毫米波频率步进单脉冲雷达角跟踪技术研究

在毫米波雷达目标跟踪中,角闪烁的非高斯特性将使得经典的卡尔曼滤波器失效。研究了非线性度函数方法在毫米波频率步进单脉冲雷达目标跟踪中的应用,采用非线性度函数方法对高分辨距离像测角数据进一步处理,仿真表明该算法性能优于经典的卡尔曼滤波。     

雷达导引头角闪烁抑制算法研究

角闪烁是雷达目标的固有特性,特别是在近距制导时,角闪烁是影响毫米波末制导雷达角跟踪精度的主要因素之一,可能使脱靶量增加,甚至导致目标丢失。本文在阐述角闪烁形成机理及其对末制导角跟踪精度影响的基础上,提出了一种基于距离高分辨和α-β-γ滤波以及角通道滤波后处理的近距离角闪烁抑制算法,并利用跑车跟踪仿形坦克目标实测数据验证了该算法的有效性。     

雷达目标回波模拟研究与实现

对雷达目标回波模拟进行了简要分析,介绍了雷达目标回波模拟所需的航迹模型、时延模型、多普勒模型、幅度起伏模型和角闪烁模型等仿真模型,以及采用上述仿真模型和基于宽带数字射频存储器（DRFM）技术、直接数字合成（DDS）技术、频率合成技术、实时信号处理技术和微波射频技术的雷达目标回波模拟系统,给出了模拟的效果图,取得了较好的模拟效果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.