一种新颖的高功率小型化等效天线

报导了等效天线的设计原理，提出了用金红石陶瓷和SW-26型高功率吸收材料组成吸收体吸收微波功率的设计方案。利用金红石陶瓷相对介电常数εr=100的特性，有效减小等效天线的几何尺寸；应用SW-26型高功率吸收材料，使等效天线沿传输方向相等长度吸收的微波功率相等。在米波波段实现了小型化，获得了高性能。     

用电校准热电探测器测量短脉冲的能量

用电校准热电探测器精确测量周期脉冲能量(约3毫微秒时间),其平均功率电平为微瓦到毫瓦级。在这方面的应用中,特别主要的误差来源是热电的声响应、线性度和它的金黑层的可能损坏。这种探测器有一薄层聚合物膜,把辐射接收器与热电材料隔开。此膜从时间上把对声能的压电响应和热电响应区别开来,声能和能量脉冲的吸收有关。因此,业已证明,声响应不是误差的主要来源。此膜还可使对热电转换器所需的线性度要求降低,比无膜热电转换器者降低五个数量级。用所讨论的探测器可测周期脉冲能量,误差5％。     

不同尺寸、形状和组成的金纳米颗粒的光热特性:在癌症治疗中的应用

光热疗法由于其安全和高效的优点,作为一种非破坏性方法在癌症治疗中有广泛的应用前景。光热疗法中,所采用的纳米颗粒在近红外波段的光热转换效率取决于纳米颗粒的光谱吸收特性。采用时域有限差分法对球型、壳型、杆型、片型、笼型、星型和花型等七种不同金纳米颗粒的光谱吸收特性进行了仿真计算,结果表明纳米颗粒的几何参数和结构对其光谱吸收效率和共振波长产生了显著的影响。通过对比七种金纳米颗粒的体积吸收系数,发现金纳米片在近红外波段的光热转换效率优于其他六种金纳米颗粒。从电流密度矢量分布得出,金纳米颗粒内部产生共振电流是导致金纳米颗粒在近红外波段具有明显的单色吸收特性的原因。     

改变金扩散程序增强扩金效果

本文综述了金在硅中的异常扩散行为,重点分析了高浓度磷扩散区对金的吸收作用和SiO_2,对金原子扩散的掩蔽作用.指出目前逻辑集成电路制造中广泛采用的金扩散程序,其扩金效果较差,提出金扩散与磷扩散同时进行的新扩金程序.实验结果证实扩金效果得到增强,从而开关性能相应得到改善.     

金纳米棒的光学性质及其在癌症诊断和光热疗法中的应用

与球形金颗粒相比,棒状金颗粒具有更为特殊的表面等离子共振(SPR)特性:有横向和纵向两个SPR峰,纵向SPR峰的位置取决于金纳米棒颗粒的长短轴比,因此通过控制不同长短轴比,可以实现纵向SPR峰位置的人为调控(从可见光区到近红外光区),金纳米棒,由于其表面SPR等强吸收和发光特性,在癌症的诊断和治疗中存在着巨大的应用前景.结合配体的金纳米棒能够特异性地标记癌症细胞上的受体,并提供特定分子的特有信息,进行生物成像和癌症检测.另外,金纳米棒能够有效地吸收红外光能量进行局部加热,导致蛋白质变性,并致细胞死亡.主要回顾各种不同尺寸和形状的金纳米棒的光学特性,综述了选择性标记的金纳米棒在癌症诊断和光热疗法中的研究进展.     

纳米金胶体的制备及其对血液光吸收性的影响

纳米金是指粒径介于1~100 nm之间的金粒子,具有良好的生物兼容性、结构稳定性和光学性质,可用于强化激光治疗血管性皮肤病的光吸收。采用柠檬酸钠还原法制备纳米金胶体,研究了温度、加热时间、柠檬酸钠还原剂用量等因素对其粒径和吸收光谱的影响,得到了制备纳米金胶体的最佳条件。取制备得到的粒径为16 nm左右的纳米金胶体与血液混合后稀释,研究了胶体金对血液光吸收性能的影响及其随温度的变化规律。结果表明,加入胶体金后血液的光吸收性能随着加入体积比的增大而增强,当胶体金与血液的体积比为5时,血液在545 nm和581 nm处的吸收峰值分别提高了1.33倍和1.09倍。在变温条件下,胶体金不会对血液的动态吸收特性产生影响。     

金纳米微粒的光学性质及其在生物成像和光热疗法中的应用

作为生物探针,纳米微粒以其独特的光学性质,易控的表面化学能力,在基于生物成像和诊断的分子生物学和医学领域中引起越来越广泛的关注.贵金属,尤其是金纳米微粒,由于其表面等离子体共振(SPR)等强吸收和发光特性,在生物组织成像,癌症的诊断和治疗中存在着巨大的应用前景.结合配体的金纳米微粒能够特异性地标记癌症细胞上的受体,并提供特定分子的特有信息,进行生物成像和癌症检测.另外,金纳米微粒能够有效地吸收光能量进行局部加热,导致蛋白质变性,并致细胞死亡.主要回顾各种不同尺寸和形状的金纳米微粒的光学特性,以及选择性标记的金纳米微粒在生物成像,癌症诊断和光热疗法中的研究进展.     

激光CVD制备SnO_2薄膜的结构及其反应机理研究

采用ＳｎＣｌ４和Ｏ２为反应源，ＡｒＦ准分子激光ＣＶＤ生长ＳｎＯ２薄膜，利用ＸＲＤ、ＵＶＴ、ＸＰＳ研究了薄膜的组成和结构，实验表明ＳｎＯ２薄膜属于四方晶系、金红石结构，薄膜的紫外可见光透射率大于９０％，吸收边波长为３５５ｎｍ，禁带宽度为３．４９ｅＶ。最后，对ＳｎＯ２薄膜的反应机理进行了讨论     

基于小波变换的爆炸物太赫兹光谱降噪分析

采用太赫兹时域光谱技术(terahenz time-domain spectroscopy,THz-TDs)对钝感RDX(黑索金)和HMX(奥克托金)炸药在0～2.5 THz频段的太赫兹吸收光谱进行了探测.得到了待测样晶的太赫兹吸收光谱,确定了其特征吸收峰的位置,与其他研究机构所测吸收谱进行了对比分析.结果表明,利用太...     

新型高功率超高频终端

介绍了高功率超高频终端的研制结果.制备了具有高介电常数、低温度系数的金红石陶瓷和具有温度补偿特性的MnZn-1000铁氧体;发明了吸收特性可控可调的CS-12型高功率吸收材料.按照功率均分理论和阻抗匹配原理,精确设计由三种材料组成的复合吸收体和超高频终端腔体.研究表明:试验结果与理论分析相一致.     

Laser-assisted bumping for flip chip assembly

A novel laser-assisted chip bumping technique is presented in which bumps are fabricated on a carrier and subsequently transferred onto silicon chips by a laser-driven release process. Copper bumps with gold bonding layers and intermediate nickel barriers are fabricated on quartz wafers with pre-deposited polyimide layers, using UV lithography and electroplating. The bumps are thermosonically bonded to their respective chips and then released from the carrier by laser machining of the polyimide layer, using light incident through the carrier. Bumps of 60 to 85 μm diameter and 50 μm height at a pitch of 127 μm have been fabricated in peripheral arrays. Parallel bonding and subsequent transfer of arrays of 28 bumps onto test chips have been successfully demonstrated. Individual bump shear tests have been performed on a sample of 13 test chips, showing an average bond strength of 26 gf per bump     

On selective electroplating of gold in fabrication of MIC's

The analysis of the reasons causing degradation observed in resist layer during selective gold plating on patterns for MIC's has resulted in an excellent combination of electrolytic bath and photoresist type. Thick layers of gold (i.e. more than 10 μm) have been deposited by the method presented here over a period of about 1 h without any deterioration in the photoresist property. This combination can be used in the fabrication of beam lead devices with better results.     

Origin of Surface Defects in PCB Final Finishes by the Electroless Nickel Immersion Gold Process

We suggest a unique mechanism for surface defect generation causing solder joint or bonding failures in printed circuit boards (PCBs). Surface defects can be defined as corroded holes or spikes of the Ni-P layers on the soldering or wire bonding pads of PCBs. The typical defects are the black pad or pinhole pad defects generated after final finishing by the electroless nickel immersion gold (ENIG) process. Once corroded voids or spikes are plentifully created in nickel/gold interfaces, the bonding strength of solder or wire bonding joints is reduced. Therefore, it is important to characterize the details of these surface defects. In this paper, the defect microstructures and the P content variation with the ENIG processes are investigated. The surface defect selectivity with pad size and pad connectivity is suggested based on the key findings of P content variation. An overall mechanism is proposed based on a mixed mode of concentration cell corrosion and galvanic cell corrosion. Based on these results, more reasonable root causes are suggested.     

镍层耐硝酸腐蚀性测试——一种简单的预先探测ENIG镍层“黑盘”现象的测试方法

随着更加精细的SMT、BGA等表面贴装技术的运用,化学沉镍金(ENIG)作为线路板最终表面处理得到了越来越广泛的应用,同时可怕的“黑盘”现象也随之更广泛地“流行”起来,直接导致贴装后元器件焊接点不规则接触不良。为了贯彻执行最好的流程控制和采取有效的预防措施,了解这种焊接失败的产生机理是非常重要的,及早的观测到可能发生“黑盘”现象的迹象变得同样关键。本文介绍了一种简单的预先探测ENIG镍层“黑盘”现象的测试方法-镍层耐硝酸腐蚀性测试,这种测试可以用于作为一种常规的测试方法监测一般化学沉镍溶液在有效使用寿命范围内新鲜沉积的镍层的质量。利用Weibull概率统计分析在不同的金属置换周期(MTO)下镍层的可靠性能表现。结合试验结果得出了一个镍层耐硝酸腐蚀性的判定标准。     

Experimental analysis of galvanic corrosion of a thin metal film in a multilayer stack for MEMS application

Experimental analysis of galvanic corrosion of an aluminium (Al)–chromium (Cr)–gold (Au) multilayer stack is presented in this paper. The use of two or more stacks of different metal films is common for realisation of various microelectromechanical system (MEMS) devices. However, patterning of the multilayer metal films by lithographic and etching process is very critical due to galvanic corrosion. In a multilayer metal stack film, the knowledge of etch rate of the individual metal layers is very important for designing the process flow for the fabrication of micro-sensors. In the present study, galvanic corrosion characteristics of Al–Cr binary metal stack and Al–Cr–Au ternary metal stack in different etching solutions have been studied. The intermetallic contact area and the exposed metal area in the electrolyte solution were varied using an innovative process step involving silicon shadow mask technique and lithographic process. It is observed from the experimental results that for an intermetallic contact area to exposed metal area ratio of 2, etch rate of aluminium layer is increased by more than two times in aluminium etchant and 80% in Cr etchant as compared to the etch rate of the aluminium layer without intermetallics effect. The results obtained from this study have been applied for designing the fabrication flow and successful realisation of a MEMS piezoresistive accelerometer.     

Controlling optical properties of electrodes with stacked metallic thin films for polymeric light-emitting diodes and displays

A semi-transparent metallic film and a high optical absorbing film were constructed with stacking metallic films. Both films were used as cathodes for polymeric light-emitting diodes (PLEDs). The semi-transparent film was made of gold/aluminum/gold thin multilayers with its optical transparency of the device reaches as high as /spl sim/70% in the visible region without capping layer, and the electrical sheet resistance reduces below 10 /spl Omega//square. During illumination of the PLED, there was approximately 47% of light emitting from the top of the cathode surface, and 53% of light from the ITO side. The high optical absorbing film, also refer to as the black cathode, was constructed with four alternating layers of aluminum-silver, each aluminum or silver layer is 4 nm thick. The PLED with this black cathode demonstrated 126% enhancement of contrast under 1000 lx ambient illumination. The physical properties of these two cathodes were characterized by current-voltage measurement and atomic force microscopy. Ultraviolet-visible transmission spectroscopy and X-ray photoemission spectroscopy were also used to characterize the semi-transparent cathode and the black cathode respectively. For polymer light-emitting device, it is believed that morphology modification at each interface of the cathode plays a crucial role in determining the optical properties and conductivity of the over cathode.     

Material development for dye solar modules: results from an integrated approach

In this paper, we report on the outcome of a German network project conducted with 12 partners from universities and research institutes on the material development of dye solar cells (DSC). We give an overview in the field and evaluate the concept of monolithic DSC further with respect to upscaling and producibility on glass substrates. We have developed a manufacturing process for monolithic DSC modules which is entirely based on screen printing. Similar to our previous experience gained in the sealing of standard DSC, the encapsulation of the modules is achieved in a fusing step by soldering of glass frit layers. For use in monolithic DSC, a platinum free, conductive counter electrode layer, showing a charge transfer resistance of R_CT < 1·5 Ω cm², has been realized by firing a graphite/carbon black composite under an inert atmosphere. Glass frit sealed monolithic test cells have been prepared using this platinum‐free material. A solar efficiency of 6% on a 2·0 cm² active cell area has been achieved in this case. Various types of non‐volatile imidazolium‐based binary ionic liquid electrolytes have been synthesized and optimized with respect to diffusion‐limited currents and charge transfer resistances in DSC. In addition, quasi‐solid‐state electrolytes have been successfully tested by applying inorganic (SiO₂) physical gelators. For the use in semi‐transparent DSC modules, a polyol process has been developed which resulted in the preparation of screen printed, transparent catalytic platinum layers showing an extremely low charge transfer resistance (0·25 Ω cm²). Copyright © 2008 John Wiley & Sons, Ltd.     

Gold Stud Bumps Flip-Chip Bonded onto Copper Electrodes with Titanium and Silver Layers

The purpose of this study was to develop the thermosonic flip-chip bonding process for gold stud bumps bonded onto copper electrodes on an alumina substrate. Copper electrodes were deposited with silver as the bonding layer and with titanium as the diffusion barrier layer. Deposition of these layers on copper electrodes improves the bonding quality between the gold stud bumps and copper electrodes. With appropriate bonding parameters, 100% bondability was achieved. Bonding strength between the gold stud bumps and copper electrodes was much higher than the value converted from the standards of the Joint Electron Device Engineering Council (JEDEC). The effects of process parameters, including bonding force, ultrasonic power, and bonding time, on bonding strength were also investigated. Experimental results indicate that bonding strength increased as bonding force and ultrasonic power increased and did not deteriorate after prolonged storage at elevated temperatures. Thus, the reliability of the high-temperature storage (HTS) test for gold stud bumps flip-chip bonded onto a silver bonding layer and titanium diffusion barrier layer is not a concern. Deposition of these two layers on copper electrodes is an effective and direct method for thermosonic flip-chip bonding of gold stud bumps to a substrate, and ensures excellent bond quality. Applications such as flip-chip bonding of chips with low pin counts or light-emitting diode (LED) packaging are appropriate.     

镍腐蚀的影响因素与改善方法探讨

镍腐蚀是指发生在化学镍金的化镍、沉金过程中发生的金对镍的攻击过度造成局部位置或整体位置镍腐蚀的现象,严重者则导致＂黑盘＂的出现,严重影响PCB的可靠性。报告通过评估分析镍腐蚀影响的因素,提出相应的改善方法,改善流程的稳定性。     

ENIG焊点的失效机理及镀层重工方法研究

采用显微形貌、微观结构和元素成分分析等物理分析方法,以不同类型的化镍浸金(electroless nickel/immersion gold,ENIG)基板为对象,分析了其焊点在不同情形下的失效模式和失效机理,阐述了"黑盘"缺陷的主要失效特征,研究了具有黑盘缺陷的化镍浸金基板的重工工艺.研究结果显示,Ni层断裂表面单一的高P含量或轻微Ni层腐蚀不能作为黑盘缺陷的唯一依据,已形成良好金属间化合物(intermetallic compound,IMC)层的Ni层腐蚀位置的焊接界面仍具有良好的机械结合强度,采用喷锡工艺(hot air solder level,HASL)对具有黑盘缺陷的化镍浸金基板进行重新处理切实可行.