Phase-transition temperatures and piezoelectric properties of (Bi1/2Na1/2)TiO3-(Bi1/2Li1/2)TiO3-(Bi1/2K1/2)TiO3 lead-free ferroelectric ceramics.

The phase-transition temperatures and piezoelectric properties of x(Bi(1/2)Na(1/2))TiO3-y(Bi(1/2)Li(1/2))TiO3-z(Bi(1/2)K(1/2))TiO3 [x + y + z = 1] (abbreviated as BNLKT100(y)-100(z)) ceramics were investigated. These ceramics were prepared using a conventional ceramic fabrication process. The phase-transition temperatures such as depolarization temperatures T(d), rhombohedraltetragonal phase transition temperature T(R-T), and dielectric-maximum temperature T(m) were determined using electrical measurements such as dielectric and piezoelectric properties. The X-ray powder diffraction patterns of BNLKT100(y)-100(z)) show the morphotropic phase boundary (MPB) between rhombohedral and tetragonal at approximately z = 0.20, and the piezoelectric properties show the maximum at the MPB. The electromechanical coupling factor k(33), piezoelectric constant d(33) and T(d) of BNLKT4-20 and BNLKT8-20 were 0.603, 176 pC/N, and 171 degrees C, and 0.590, 190 pC/N, and 115 degrees C, respectively. In addition, the relationship between d33 and Td of tetragonal side and rhombohedral side for BNLKT4-100z and BNLKT8-100z were presented. Considering both high Td and high d(33), the tetragonal side of BNLKT4-100z is thought to be the superior composition. The d(33) and T(d) of BNLKT4-28 were 135 pC/N and 218 degrees C, respectively. Moreover, this study revealed that the variation of T(d) is related to the variation of lattice distortion such as rhombohedrality 90-alpha and tetragonality c/a.     

Structural and Dielectric Properties of ZnO Added (Na_(1/2)Bi_(1/2))TiO_3 Ceramics

Structural and dielectric properties of polycrystalline samples of lead-free(1-x)(Na1/2Bi1/2)TiO3-xZnO,prepared using a high-temperature solid-state reaction method,were investigated in the composition range of 0≤x≤0.10.Rietveld analyses of X-ray diffraction data indicated the formation of a single-phase hexagonal structure with R3c symmetry.Williamson-Hall approach was applied to estimate the apparent particle size and lattice strain of the compounds.Temperature dependence of dielectric constant showed that the addition of ZnO to(Na1/2Bi1/2)TiO3 shifted the phase transition temperature towards higher side,a property favourable for practical applications of these ceramics.Further,temperature dependent permittivity data provided low temperature coefficient of capacitance(TCC <8%) up to 100 ℃.Furthermore,a decrease in the value of dielectric loss with an increase in ZnO content was observed.     

Piezoelectric properties in (K0.5Bi0.5)TiO3-(Na0.5Bi0.5)TiO3-BaTiO3 lead-free ceramics.

Lead-free piezoelectric ceramics with compositions around the morphotropic phase boundary (MPB) x(Na0.5Bi0.5)TiO3-y(K0.5Bi0.5)TiO3-zBaTiO3 [x + y + z = 1; y:z = 2:1] were synthesized using conventional, solid-state processing. Dielectric maximum temperatures of 280 degrees C and 262 degrees C were found for tetragonal 0.79(Na0.5Bi0.5)TiO3-0.14(K0.5Bi0.5)TiO3-0.07BaTiO3 (BNBK79) and MPB composition 0.88(Na0.5Bi0.5)TiO3-0.08(K0.5Bi0.5)TiO3-0.04BaTiO3 (BNBK88), with depolarization temperatures of 224 degrees C and 162 degrees C, respectively. Piezoelectric coefficients d33 were found to be 135 pC/N and 170 pC/N for BNBK79 and BNBK88, and the piezoelectric d31 was determined to be -37 pC/N and -51 pC/N, demonstrating strong anisotropy. Coercive field values were found to be 37 kV/cm and 29 kV/cm for BNBK79 and BNBK88, respectively. The remanent polarization of BNBK88 (approximately 40 microC/cm2) was larger than that of BNBK79 (approximately 29 microC/cm2). The piezoelectric, electromechanical, and high-field strain behaviors also were studied as a function of temperature and discussed.     

铅对(Pbx,Sr1-x)0.85Bi0.1TiO3薄膜结构与介电可调性影响的研究

用溶胶-凝胶法制备了（Pbx，Sr1-x）0．85Bi0．1TiO3薄膜，对其晶相结构、微观形貌和介电可调性进行了研究．结果表明，该薄膜以钙钛矿形式存在．快速热处理过程可分解得到高活性离子，直接形成比相应温度平衡状态析晶时更多的晶相量．这种晶相在一定条件下有分解和再结晶的趋势．随着Pb^2＋离子增加和Sr^2＋离子减少，钙钛矿相的四方相与立方相间的转变温度升高．薄膜处在铁电相和顺电相转变点附近时，可以获得较大的可调性．     

Fabrication and optical properties of Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) thin films on Si substrates using the PLD method.

Epitaxial 0.67Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)-0.33PbTiO(3) (PMN-PT) thin films with electro-optic effects were fabricated on (PMN-PT) thin films with electro-optic effects were fabricated on (La0(0.5)Sr0(0.5))CoO(3) (LSCO)/CeO(2)/YSZ-buffered Si(001) substrates using double-pulse excitation pulsed laser deposition (PLD) method with a mask placed between the target and the substrate. Epitaxial growth of PMN-PT thin films was undertaken using the two-step growth method of PMN-PT film. The PMN-PT seed layer was deposited at 500 degrees C on the LSCO/CeO(2)/YSZ/Si, which temperature was the same as that used for LSCO deposition. The PMN-PT thin films were deposited on the PMN-PT seed layer at 600 degrees C, which enables growth of high-crystallinity PMN-PT films with smooth surfaces. We obtained optimum fabrication conditions of PMNPT film with micrometer-order thickness. Resultant films showed high crystallinity with full width at half maximum (FWHM) = 0.73 deg and 1.6 mum thickness. Electro-optic properties and the refractive index value were measured at 633 nm wavelength using the prism coupling method. The obtained refractive index was 2.59. The electro-optic coefficients r(13) and r(33) were determined by applying the electrical field between a semitransparent, thin top electrode of Pt and a bottom LSCO electrode. The electro-optic coefficient was r(13) = 17 pm/V at transverse electric field (TE) mode and r(33) = 55 pm/V at transverse magnetic field (TM) mode.     

退火时间对BNT-BT6薄膜微结构及压电性能的影响

采用溶胶-凝胶法(Sol-Gel)在Pt/Ti/SiO2/Si(100)衬底上制备了0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3(BNT-BT6)薄膜,研究了不同退火时间对其微结构和压电性能的影响。X射线衍射(XRD)结果表明,制备的BNTBT6薄膜为钙钛矿型铁电薄膜,随着退火时间的延长,晶粒尺寸略有增加。原子力显微镜(AFM)结果表明,制备的薄膜表面比较平整、无裂缝。随着退火时间的延长,薄膜的粗糙度有所增加。在退火时长为60min时薄膜表面具有最佳的均一性,在退火时间为90min时薄膜均一性最差;优化退火时间,可提高薄膜结晶程度,避免焦绿石相的生成,进而提高BNT-BT6薄膜压电性能。压电力显微镜(PFM)结果表明,BNT-BT6薄膜的电畴为多畴结构。在不同退火时间下均有明显的压电响应,特别是在退火时间为60min时,BNT-BT6原始电畴有着最高的振幅强度。在30min、40min、60min和90min退火时间时,其平均压电系数d33分别为48pm/V、157pm/V、186pm/V和142pm/V。     

Structural and dielectric properties of Ba0.7Sr0.3TiO3 thin films grown on thin Bi layer-coated Pt(111)/Ti/SiO2/Si substrates

In this work, the growth and study of dielectric properties of Ba_0.7Sr_0.3TiO₃ (BST) thin films grown on thin Bi layer coated Pt(111)/Ti/SiO₂/Si substrates, depending on thin Bi layer thickness is reported. The BST thin film (thickness 180 nm) grown on 10-nm-thick Bi layer exhibited more improved structural and dielectric properties than that grown on bare Pt(111)/Ti/SiO₂/Si substrate. The 10-nm-thick Bi layer in optimum configuration was effective for the grain growth of BST phase and suppressed the formation of the oxygen-deficient layer at the interface between the BST thin film and bottom electrode, which resulted in an increase in dielectric constant and a decrease in leakage current density of the Pt/BST thin film/Pt capacitor.     

KNN/BNT composite lead-free films for high-frequency ultrasonic transducer applications

Lead-free K(0.5)Na(0.5)NbO(3)/Bi(0.5)Na(0.5)TiO(3) (KNN/ BNT) films have been fabricated by a composite sol-gel technique. Crystalline KNN fine powder was dispersed in the BNT precursor solution to form a composite slurry which was then spin-coated onto a platinum-buffered Si substrate. Repeated layering and vacuum infiltration were applied to produce 5-μm-thick dense composite film. By optimizing the sintering temperature, the films exhibited good dielectric and ferroelectric properties comparable to PZT films. A 193-MHz high-frequency ultrasonic transducer fabricated from this composite film showed a -6-dB bandwidth of approximately 34%. A tungsten wire phantom was imaged to demonstrate the capability of the transducer.     

Structure and electrical properties of (111)-oriented Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3 thin film for ultra-high-frequency transducer applications

Ternary lead magnesium niobate-lead zirconate titanate system 0.4Pb(Mg(1/3)Nb(2/3))O(3)-0.25PbZrO(3)-0.35PbTiO(3) (40PMN-25PZ-35PT) thin film with a thickness of 1.5 μm was grown on Pt(111)/Ti/SiO(2)/Si substrate via chemical solution deposition. X-ray diffraction and transmission electron microscopy results suggested the film obtained was highly (111)-oriented. The remanent polarization and coercive electric field of the film were found to be 25.5 μC/cm(2) and 51 kV/cm, respectively. In addition, at 1 kHz, the dielectric constant was measured to be 1960 and the dielectric loss 0.036. The film was observed to undergo a diffuse ferroelectric-to-paraelectric phase transition at around 209°C. The leakage current appeared to depend on the voltage polarity. If the Au electrode was biased positively, the leakage current was dominated by the Schottky emission mechanism. When the Pt electrode was biased positively, the conduction current curve showed an ohmic behavior at a low electric field and space-charge-limited current characteristics at a high electric field.     

双掺杂稀土锰氧化物La2/3(Ca1/3Sr2/3)1/3MnO3薄膜的输运特性

采用射频磁控溅射法制备了Ca、Sr双掺杂La2/3(Ca1/3Sr2/3)1/3MnO3(LCSMO)薄膜。电阻率-温度特性表明,薄膜在387K时发生铁磁金属相-顺磁非导体相相变。同时测试了薄膜在180,230和280K温度下的伏安特性．表明所制备的薄膜具有自阻效应,并分析了产生该现象的原因。     

Na0.5Bi0.5TiO3-BaTiO3陶瓷的介电和压电性能研究

研究了Na0.5Bi0.5TiO3和（Na0.5Bi0.5）0．94Ba0．06TiO3陶瓷的电滞回线，压电性能和热滞现象。得到（Na0.5Bi0.5）0．94Ba0．06TiO3陶瓷的剩余极化Pr=19μC/cm^2，矫顽场Ec=4.7kV/mm.发现有适量的Ba^2 取代（Na0.5Bi0.5)^2 尽管压电性能有所提高，但同时使得材料的温度稳定性大大降低。     

新型脉冲激光能量计用无铅(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3铁电薄膜的制备及其激光感生热电电压信号的研究

采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。     

Fabrication and evaluation of a single-element Bi(0.5)Na(0.5)TiO(3)-based ultrasonic transducer

This paper discusses the fabrication and characterization of a single-element ultrasonic transducer with a lead-free piezoelectric active element. A piezoelectric ceramic with composition of 0.88Bi(0.5)Na(0.5)TiO(3)-0.08Bi(0.5)K(0.5)TiO(3)- 0.04Bi(0.5)Li(0.5)TiO(3) was chosen as the active element of the transducer. This composition exhibited a thickness coupling coefficient (kt) of 0.45, a dielectric constant of 440 (at 1 kHz), and a longitudinal piezoelectric coefficient (d(33)) of 84 pC?N(-1). To make the transducer, the ceramic was sandwiched between an epoxy-tungsten backing layer and a silver epoxy matching layer. An epoxy lens was also incorporated into the transducer?s design to focus the ultrasound beam. The focused transducer with a center frequency of about 23 MHz demonstrated a -6-dB bandwidth of 55% and an insertion loss of -32 dB; the -20-dB pulsed length was measured to be 150 ns. A phantom made of copper wires (30 μm in diameter) was utilized to investigate the imaging capability of the transducer. The results indicated that the fabricated transducer, with a lateral resolution of 260 μm and a relatively high depolarization temperature, could be considered as a candidate for replacement of lead-based ultrasonic transducers.     

Ce对Na0.5Bi0.5TiO3粉体的掺杂和扩渗改性研究

为改善Na0.5Bi0.5TiO3材料的电性能,采用溶胶-凝胶法制备了Na0.5Bi0.5TiO3粉体.通过液相Ce掺杂和气相Ce扩渗两种方法,对Na0.5Bi0.5TiO3粉体进行了改性,采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、阻抗分析仪和电阻仪对改性前后Na0.5Bi0.5TiO3粉体的组成、结构和电性能的变化进行了研究.结果表明:Ce元素的添加有助于Na0.5Bi0.5TiO3粉体电阻率的降低,而扩渗改性使电阻率的降低更为显著,经600℃扩渗的Na0.5Bi0.5TiO3粉体的电阻率由3.71×106Ω.m降至2.39×101Ω.m;稀土Ce掺杂使Na0.5Bi0.5TiO3的介电常数减小,而Ce扩渗使Na0.5Bi0.5TiO3的介电常数显著增大;Ce掺杂使粒径更加均匀,而随着气相扩渗温度的提高,晶粒粒径逐渐变大;Ce掺杂没有改变Na0.5Bi0.5TiO3的主晶相结构,但Na0.5Bi0.5TiO3粉体经Ce扩渗后,出现了单质Bi及Bi2Ti2O7、Na2Ti9O19、Na2Ti6O13的特征峰.     

SiO2／TiO2复合薄膜光催化性能的研究

采用溶胶-凝胶法和浸渍提拉法在玻璃表面镀制了SiO2/TiO2复合薄膜,以SEM,XPS,UV-Vis等手段对其进行了表征;通过对亚甲基蓝的降解反应,研究了SiO2/TiO2复合薄膜在紫外光下的光催化性能。结果表明:在玻璃片上预镀SiO2层使TiO2薄膜中的Na 和Mg2 含量明显降低,同时,有利于TiO2薄膜中晶粒的长大,提高了光催化性能。     

Site-specific and patterned growth of TiO(2) nanotube arrays from e-beam evaporated thin titanium film on Si wafer

Growth of TiO(2) nanotubes on thin Ti film deposited on Si wafers with site-specific and patterned growth using a photolithography technique is demonstrated for the first time. Ti films were deposited via e-beam evaporation to a thickness of 350-1000?nm. The use of a fluorinated organic electrolyte at room temperature produced the growth of nanotubes with varying applied voltages of 10-60?V (DC) which remained stable after annealing at 500?°C. It was found that variation of the thickness of the deposited Ti film could be used to control the length of the nanotubes regardless of longer anodization time/voltage. Growth of the nanotubes on a SiO(2) barrier layer over a Si wafer, along with site-specific and patterned growth, enables potential application of TiO(2) nanotubes in NEMS/MEMS-type devices.     

Fatigue-less relaxor ferroelectric thin films with high energy storage density via defect engineer

Thin film capacitors with excellent energy storage performances,thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry.Herein,we design and prepare lead-free 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3-x％Mn(x=0,0.5,1.5,2,3)thin films via sol-gel method.Mn ions of divalent valence combine with oxygen vacancies,forming defect complex,which results in marked decline in leakage current and obvious enhancement in breakdown strength.A high energy storage density～47.6 J cm-3 and good efficiency～65.68％are simultaneously achieved in 2％Mn doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor.Moreover,the 2％Mn-doped thin film exhibits excellent thermal stability in wide operating temperature range(35-115℃)and strong fatigue endurance behaviors after 108 cycles.The above results demonstrate that 2％Mn-doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor with superior energy storage performances is a potential candidate for electrostatic energy storage.     

溶胶—凝胶制备TiO2／SiO2复合薄膜的FT—IR表征

ＦＴ－ＩＲ吸收谱用来研究具有多孔结构的ＴｉＯ２／ＳｉＯ２复合薄膜；薄膜在１２００ｃｍ＾－１有一较强的肩峰，其强度与峰位随热处理温度度而生变化。在９５５ｃｍ＾－１的吸收峰是由于Ｓｉ－Ｏ－Ｔｉ和Ｓｉ－ＯＨ的结果，并随着热处理 度的提高其吸收峰完全是Ｓｉ－Ｏ－Ｔｉ振动所引起的，其峰位随着ＴｉＯ２的增加，向低频区域移动。     

Low temperature preparation of bismuth-related ferroelectrics powder and thin films by hydrothermal synthesis

Bi(4)Ti(3)O(12) (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiO(x)/SiO(2)/Si. Bi(4)Ti(3)O(12) or TiO(2) gel solution was formed and annealed at 350 degrees C. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO(2) anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.     

Crystallization and electrical characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 thin films under different annealing temperature and atmosphere

0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 +1 wt% Bi2O3 (NBT-BT3) ceramic is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the sintering and annealing processes. NBT-BT3 thin films are successfully deposited using radio frequency (RF) magnetron sputter method and crystallized subsequently using a conventional furnace annealing (CFA) process. The annealed process is conducted in air and in oxygen atmosphere at temperatures ranging from 600-800 degrees C for 60 min. As compared with the as-deposited NBT-BT3 thin films, the CFA-treated process has improved the grain growth and crystallization. We will show that the annealing atmosphere is the more important parameter to influence the grain growth and crystallization of NBT-BT3 thin films than the annealing temperature. The influences of CFA-treated temperature and atmosphere on the electrical characteristics of NBT-BT3 thin films, including the polarization characteristics (Pr, Ps, and Ec values), the capacitance-voltage (C-V) curves, and the leakage current density-electric field (J-E) curves, are also investigated in this study.