Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Effects of CaSiO3 addition on sintering behavior and microwave dielectric properties of Al2O3 ceramics

The effects of CaSiO₃ addition on the sintering behavior and microwave dielectric properties of Al₂O₃ ceramics have been investigated. The addition of CaSiO₃ into Al₂O₃ ceramics resulted in the emergence of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which acting as liquid sintering aids can effectively lower the sintering temperature of Al₂O₃ ceramic. The Q × f value of Al₂O₃-CaSiO₃ ceramics decreased with the CaSiO₃ addition increasing because of the lower Q × f value of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈. Compared with the pure CaSiO₃ ceramic, the Al₂O₃-CaSiO₃ ceramic with 20 wt% CaSiO₃ addition possessed good dielectric properties of ?_r = 9.36 and Q × f = 13,678 GHz at the similar sintering temperature.     

Low temperature synthesis and dielectric, ferroelectric and piezoelectric study of microwave sintered BaTiO3 ceramics

Barium titanate (BaTiO₃/BT) ferroelectric system was synthesized in single perovskite phase at low temperature by using powders derived from modified solid state reaction (MSSR) and sintered by microwave (MW) processing routes. Conventional calcination temperature was optimized at 900 °C for 4 h. MW sintering of BT samples was carried out at 1100 °C for 30 min to get dense (98% density) ceramics. Room temperature (RT) dielectric constant (?_r) and dielectric loss (tan δ) at 1 kHz frequency of MW sintered BT samples was found to be ∼2500 and 0.03, respectively. Saturated polarization vs. electric field (P-E) loops with remnant polarization (P_r) ∼6 μC/cm² and coercive field (E_c) ∼1.45 kV/cm confirmed the ferroelectric nature of MW sintered BT samples. Piezoelectric coefficient from strain vs. electric field (S-E) loops study was found to be 335 pm/V.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

Effect of In, Ce and Bi dopings on sintering and dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics

In, Ce and Bi doped Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramics were prepared by conventional mixed oxide technique. In doping between 0.2 and 4.0 mol% increased the density of BZN at 1300 °C, Ce doping caused a decrease in density at 1250 °C. Levels of Bi₂O₃ up to 1.0 mol% had negative effect on densification, while high level doping could significantly improve the densification of the specimens. XRD of the samples indicated that In, Ce and Bi doping resulted in single phase formation at all concentrations, except 0.5 mol% Bi. SEM of Bi doped BZN indicated only single phase structure and Ce doping even at 0.2 mol% gave some secondary phases. In and Ce doping increased the dielectric constant from 41 to around 66 at 1 MHz. Bi doping decreased the dielectric constant to about 37 at 0.2 mol%, and then higher doping led to dielectric constant to increase to about 63.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.     

Microstructure and microwave dielectric properties of Al2O3 added Li2ZnTi3O8 ceramics

Recently, the rapid development of advanced communication systems increasingly strongly demands high-performance microwave dielectric ceramics in microwave circuits. Among them, Li₂ZnTi₃O₈ ceramics have been one of the most widely investigated species, due to its high quality factor, moderate firing conditions and low cost. However, the dielectric constants of the already reported Li₂ZnTi₃O₈ ceramics are fixed in a narrow range, limiting their wider applications. To adjust the dielectric constant of the Li₂ZnTi₃O₈ based ceramics, in this work Li₂ZnTi₃O₈ ceramics added with different amounts of Al₂O₃ (0–8?wt%) were prepared by conventional solid-state reaction. The microstructure and microwave dielectric properties of the samples were investigated. Due to the addition of Al₂O₃, the sintering temperature of the ceramics would be increased somewhat. Some Al³⁺ ions could substitute for Ti⁴⁺ ions in Li₂ZnTi₃O₈, and the added Al₂O₃ would react with ZnO to produce a ZnAl₂O₄ phase accompanying with the formation of TiO₂ phase, which would inhibit the growth of Li₂ZnTi₃O₈ grains. The dielectric constant of the finally obtained ceramics would be reduced from 26.2 to 17.9, although the quality factors of the obtained ceramics would decrease somewhat and the temperature coefficient of resonant frequency would deviate further from zero.     

Dielectric and piezoelectric properties of (Ba0.95Ca0.05)(Ti0.88Zr0.12)O3 ceramics sintered in a protective atmosphere

(Ba_0.95Ca_0.05)(Ti_0.88Zr_0.12)O₃ (BCTZ) ceramics have been produced in a protective atmosphere of industrial N₂ gas for potential piezoelectric applications. For comparison, the ceramics were also sintered at 1200–1400 °C in air. The results revealed that the reducing atmosphere of pO₂ = 5 × 10² Pa had no substantial effect on the phase structure or the microstructure of the BCTZ ceramics. The XRD patterns suggested a tetragonal to pseudocubic phase transition at sintering temperatures above 1300 °C in both atmospheres. The nitrogen-sintered BCTZ samples had higher dielectric constants _r but lower electromechanical coupling coefficients k_p than the air-sintered samples. The piezoelectric constant d₃₃ for the BCTZ ceramics was not significantly influenced by the reducing atmosphere of pO₂ = 5 × 10² Pa. The correlation of dielectric and piezoelectric properties of the BCTZ ceramics with the sintering temperature was explained based on a competing mechanism between phase structure and microstructure.     

Microstructure and dielectric properties of low temperature sintered ZnNb2O6 microwave ceramics

Low sintering temperature ZnNb₂O₆ microwave ceramics were prepared by doping with mixed oxides of V₂O₅–Bi₂O₃ and V₂O₅–Bi₂O₃–CuO. The effects of additives on the microstructure and dielectric properties of the ceramics were investigated. The results show that doping with V₂O₅–Bi₂O₃ can reduce the sintering temperature of ZnNb₂O₆ from 1150 °C to 1000 °C due to the formation of V₂O₅ and Bi₂O₃ based eutectic phases. The combined influence of V₂O₅ and Bi₂O₃ resulted in rod-like grains. Co-doping CuO with 1 wt.% V₂O₅–1 wt.% Bi₂O₃ further lowered the sintering temperature to 880 °C, because eutectic phases could be formed between the CuO, V₂O₅ and Bi₂O₃. A second phase of (Cu₂Zn)Nb₂O₈ also forms when the content of CuO is greater than 2.5 wt.%. A pure ZnNb₂O₆ phase can be obtained when the amount of CuO was 1.0–2.5 wt.%. The Q × f values of ZnNb₂O₆ ceramics doped with V₂O₅–Bi₂O₃–CuO were all higher than 25,000 GHz. The dielectric constants were 22.8–23.8 at microwave frequencies. In addition, theτ_f values decreased towards negative as the content of CuO increased. The ceramic with composition of ZnNb₂O₆ + 1 wt.%V₂O₅ + 1 wt.% Bi₂O₃ + 2.5 wt.% CuO sintered at 880 °C exhibited the optimum microwave dielectric properties, is 23.4, Q × f is 46,975 GHz, and τ_f is −44.89 ppm/°C, which makes it a promising material for low-temperature co-fired ceramics (LTCCs).     

Densification,microstructure evolution,and microwave dielectric properties of Mg1-xCaxZrTa2O8 ceramics

In this study, the effects of the Mg²⁺ ions replaced by Ca²⁺ ions on the microwave dielectric properties of newly developed MgZrTa₂O₈ were investigated. Mg_1-xCa_xZrTa₂O₈ (x = 0–1.0) ceramics were prepared via a solid-state reaction method. Calcination of the mixed powders was performed at 1200 °C and sintering of the powder compacts was accomplished at temperatures from 1200 to 1550 °C. The substitution of Ca²⁺ significantly inhibited the densification of Mg_1-xCa_xZrTa₂O₈, led to the expansion of the unit cells, and triggered the formation of a second phase, CaTa₂O₆. The porosity-corrected relative permittivity increased almost linearly with the x value because of the replacement of the less polarizable Mg²⁺ ions by the more polarizable Ca²⁺ ions. The variation in the Q × f values followed a similar trend as that of the sintered density, and the change trend in the τ_f values was in accordance with that of relative permittivity. The best composition appeared to be Mg_0.9Ca_0.1ZrTa₂O₈, which showed excellent microwave dielectric properties of ε_r = 22.5, Q × f = 231,951 GHz, and τ_f = −32.9 ppm/°C. The Q × f value obtained is the highest among the wolframite dielectric ceramics reported in literature.     

Hydrothermal synthesis of BaTiO3 from different Ti-precursors and microstructural and electrical properties of sintered samples with submicrometric grain size

Barium titanate submicrometric particles were synthesized at 180 °C in a closed PTFE-lined stainless steel reactor with continuous stirring. Precursors used for titanium were Degussa P25 TiO₂ or titanium isopropoxide (TIP). Barium hydroxide (Ba(OH)₂) was added in a Ba/Ti = 1.1 molar ratio and KOH was used as mineralizer. The obtained powders were characterized by XRD and Raman spectroscopy. Powders were uniaxially pressed into discs and sintered at 1250 °C. The resulting microstructures were characterized by XRD, SEM, and Raman spectroscopy. Electrical measurements were carried out in order to characterize the ferroelectric behavior. The Ti precursor determined the sample density and grain size distribution and, consequently, the electrical response.     

Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature

The preparation and dielectric properties of 3ZnO·B₂O₃ ceramics were investigated. Dense 3ZnO·B₂O₃ ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B₂O₃ structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?_r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τ_f ∼ −80 ppm/°C. The dependences of relative density, ?_r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B₂O₃ ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate.     

Effect of Ti5Si3 on wear properties of Ti3Si(Al)C2

Near-fully dense Ti₃Si(Al)C₂/Ti₅Si₃ composites were synthesized by in situ hot pressing/solid–liquid reaction process under a pressure of 30 MPa in a flowing Ar atmosphere at 1580 °C for 60 min. Compared to monolithic Ti₃Si(Al)C₂, Ti₃Si(Al)C₂/Ti₅Si₃ composites exhibit higher hardness and improved wear resistance, but a slight loss in flexural strength (about 26% lower than Ti₃Si(Al)C₂ matrix). In addition, Ti₃Si(Al)C₂/Ti₅Si₃ composites maintain a high fracture toughness (K_IC = 5.69–6.79 MPa m^1/2). The Ti₃Si(Al)C₂/30 vol.%Ti₅Si₃ composite shows the highest Vickers hardness (68% higher than that of Ti₃Si(Al)C₂) and best wear resistance (the wear resistance increases by 2 orders of magnitude). The improved properties are mainly ascribed to the contribution of hard Ti₅Si₃ particles, and the strength degradation is mainly due to the lower Young's modulus and strength of Ti₅Si₃.     

Microwave dielectric properties of low loss microwave dielectric ceramics: A0.5Ti0.5NbO4 (A = Zn,Co)

The microwave dielectric properties of low-loss A_0.5Ti_0.5NbO₄ (A = Zn, Co) ceramics prepared by the solid-state route had been investigated. The influence of various sintering conditions on microwave dielectric properties and the structure for A_0.5Ti_0.5NbO₄ (A = Zn, Co) ceramics were discussed systematically. The Zn_0.5Ti_0.5NbO₄ ceramic (hereafter referred to as ZTN) showed the excellent dielectric properties, with ɛ_r = 37.4, Q × f = 194,000 (GHz), and τ_f = −58 ppm/°C and Co_0.5Ti_0.5NbO₄ ceramic (hereafter referred to as CTN) had ɛ_r = 64, Q × f = 65,300 (GHz), and τ_f = 223.2 ppm/°C as sintered individually at 1100 and 1120 °C for 6 h. The dielectric constant was dependent on the ionic polarizability. The Q × f and τ_f are related to the packing fraction and oxygen bond valence of the compounds. Considering the extremely low dielectric loss, A_0.5Ti_0.5NbO₄ (A = Zn and Co) ceramics could be good candidates for microwave or millimeter wave device application.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

Reduced leakage current of multiferroic BiFeO3 ceramics with microwave synthesis

Preparation of multiferroic BiFeO₃(BFO) is reported using microwave heating. The prepared sample is characterized using x-ray diffraction, scanning electron microscopy, differential scanning calorimetry and leakage current measurements. It is observed that the BFO can be prepared with microwave heating at a fast heating rate, consisting of more homogeneous microstructure and better electrical properties. Phase purity of the sample is confirmed from x-ray diffraction measurements. Uniform grain size distribution is observed for the sample prepared with microwave heating. More than an order of magnitude reduction in the leakage current is observed for the sample prepared with microwave heating as compared to conventional radiant heating.     

Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Nano-size Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ (χ = 0.00, 0.05, 0.10, 0.15 and 0.20) precursor powders were prepared via the sol–gel method and the citrate auto-ignition route and then processed into micro-crystal Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics under heat treatment. Characterization of the as-obtained ceramics with XRD and SEM showed an average grain sizes of ∼1–2 μm, indicating La³⁺ amount to have little impact on grain size. The room-temperature dielectric constant of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics sintered at 1000 °C was of the order of 10³–10⁴ despite the variation of χ values. Compared with CaCu₃Ti₄O₁₂, La³⁺-doped CaCu₃Ti₄O₁₂ showed a flatter dielectric constant curve related to frequency. It was found that the loss tangent of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics was less than 0.20 in ∼600–10⁵ Hz region, which rapidly decreased to a minimum value of 0.03 by La³⁺doping with χ = 0.05. Our measurement of the ceramics conductivities (σ) also indicated that the appropriate introduction of La³⁺ into CaCu₃Ti₄O₁₂ would distinctly result in its dielectric properties.     

Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics

The microwave dielectric properties of (Ba_xMg_1−x)(A_0.05Ti_0.95)TiO₃ (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q×f value decreased. The sintered (Ba_xMg_1−x)(Zr_0.05Ti_0.95)TiO₃ (called B_xMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (Ba_xMg_1−x)(Sn_0.05Ti_0.95)TiO₃ (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τ_f value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_0.1Mg_0.9)(Sn_0.05Ti_0.95)TiO₃ ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τ_f value of −3.3 ppm/°C sintered at 1210 °C for 4 h.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.