Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Particle size effect of Li[Ni0.5Mn0.5]O2 prepared by co-precipitation

Spherical (Ni_0.5Mn_0.5)(OH)₂ with different secondary particle size (3 μm, 10 μm in diameter) was synthesized by co-precipitation method. Mixture of the prepared hydroxide and lithium hydroxide was calcined at 950 °C for 20 h in air. X-ray diffraction patterns revealed that the prepared material had a typical layered structure with space group. Spherical morphologies with mono-dispersed powders were observed by scanning electron microscopy. It was found that the layered Li[Ni_0.5Mn_0.5]O₂ delivered an initial discharge capacity of 148 mAh g⁻¹ (3.0-4.3 V) though the particle sizes were different. Li[Ni_0.5Mn_0.5]O₂ having smaller particle size (3 μm) showed improved area specific impedance due to the reduced Li⁺ diffusion path, compared with that of Li[Ni_0.5Mn_0.5]O₂ possessing larger particle size (10 μm). Although the Li[Ni_0.5Mn_0.5]O₂ (3 μm) was electrochemically delithiated to Li_0.39[Ni_0.5Mn_0.5]O₂, the resulting exothermic onset temperature was around 295 °C, of which the value is significantly higher than that of highly delithiated Li_1−δCoO₂ (∼180 °C).     

Dielectric properties of CuO-doped La2.98/3Ba0.01(Mg0.5Sn0.5)O3 ceramics at microwave frequency

The microwave dielectric properties of La_2.98/3Ba_0.01(Mg_0.5Sn_0.5)O₃ ceramics prepared by the conventional solid-state method were investigated for application in mobile communication. A 100 °C reduction of the sintering temperature was obtained by using CuO as a sintering aid. A dielectric constant of 20.0, a quality factor (Q × f) of 50,100 GHz and a temperature coefficient of resonant frequency τ_f of −78.3 ppm/°C were obtained when La_2.98/3Ba_0.01(Mg_0.5Sn_0.5)O₃ ceramics with 0.25 wt.% CuO were sintered at 1500 °C for 4 h.     

The influence of sintering aids for Nd(Mg0.5Ti0.5)O3 microwave dielectric ceramics properties

The influence of various sintering aids on the microwave dielectric properties and the structure of Nd(Mg_0.5Ti_0.5)O₃ ceramics were investigated systematically. B₂O₃, Bi₂O₃, and V₂O₅ were selected as liquid-phase sintering aids to lower the sintering temperature. The sintered Nd(Mg_0.5Ti_0.5)O₃ ceramics are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and microwave dielectric properties. The sintering temperature of Nd(Mg_0.5Ti_0.5)O₃ microwave dielectric ceramics is generally high, about 1500 °C. However, the sintering temperature was significantly lowered about 175 °C from 1500 °C to 1325 °C by incorporating in 10 mol% B₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (_r) value of 26.2, a quality factor (Q × f) value of 61,307 (at 9.63 GHz), and τ_f value of −45.5 ppm/°C. NdVO₄ secondary phase was observed at 10 mol% V₂O₅ addition in the sintering temperature range of 1300–1325 °C, which led the degradation in microwave dielectric properties. The microwave dielectric properties as well as grain sizes, grain morphology, and bulk density were greatly dependent on sintering temperature and various sintering aids. In this study, it is found that Nd(Mg_0.5Ti_0.5)O₃ incorporated with 10 mol% B₂O₃ with lower sintering temperature and excellent dielectric microwave properties may be suggested for application in microwave communication devices. The use of liquid-phase sintering, the liquid formed during firing normally remains as a grain boundary phase on cooling. This grain boundary phase can cause a deterioration of the microwave properties. Therefore, the selection of a suitable sintering aid is extremely important.     

All-solid-state lithium battery with a three-dimensionally ordered Li1.5Al0.5Ti1.5(PO4)3 electrode

To fabricate all-solid-state Li batteries using three-dimensionally ordered macroporous Li_1.5Al_0.5Ti_1.5(PO₄)₃ (3DOM LATP) electrodes, the compatibilities of two anode materials (Li₄Mn₅O₁₂ and Li₄Ti₅O₁₂) with a LATP solid electrolyte were tested. Pure Li₄Ti₅O₁₂ with high crystallinity was not obtained because of the formation of a TiO₂ impurity phase. Li₄Mn₅O₁₂ with high crystallinity was produced without an impurity phase, suggesting that Li₄Mn₅O₁₂ is a better anode material for the LATP system. A Li₄Mn₅O₁₂/3DOM LATP composite anode was fabricated by the colloidal crystal templating method and a sol-gel process. Reversible Li insertion into the fabricated Li₄Mn₅O₁₂/3DOM LATP anode was observed, and its discharge capacity was measured to be 27 mA h g⁻¹. An all-solid-state battery composed of LiMn₂O₄/3DOM LATP cathode, Li₄Mn₅O₁₂/3DOM LATP anode, and a polymer electrolyte was fabricated and shown to operate successfully. It had a potential plateau that corresponds to the potential difference expected from the intrinsic redox potentials of LiMn₂O₄ and Li₄Mn₅O₁₂. The discharge capacity of the all-solid-state battery was 480 μA h cm⁻².     

Fabrication and electrical properties of textured (Na,K)0.5Bi0.5TiO3 ceramics by reactive-templated grain growth

Textured (Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) ceramics with a relative density of >94% were fabricated by reactive-templated grain growth. Plated-like Bi₄Ti₃O₁₂ template particles synthesized by the NaCl–KCl molten salt process were aligned by tape casting in a mixture of original oxide powders. The effect of sintering temperature on the grain orientation and electrical properties of textured NKBT ceramics were investigated. The results show that the textured ceramics have a microstructure with plated-like grains aligning in the direction parallel to the casting plane. The degree of grain orientation increased at increasing sintering temperature. The textured ceramics show anisotropic electrical properties in the directions parallel and perpendicular to the casting plane. The dielectric constant parallel to {h 0 0} plane is three times higher than that of the perpendicular direction in textured NKBT ceramics. The optimized sintering temperature is 1150 °C where the maximum dielectric constant is 2041, the remnant polarization is 68.7 μC/cm², the electromechanical coupling factor (k₃₁) and the piezoelectric constant (d₃₃) amount to 0.31 and 134 pC/N, respectively.     

Piezoelectric properties and microstructures of ZnO-doped Bi0.5Na0.5TiO3 ceramics

This article studies the microstructure and piezoelectric properties of a ceramic lead-free NBT under different amount of ZnO doping. X-ray diffraction shows that Zn²⁺ diffuses into the lattice of (Bi_0.5Na_0.5)TiO₃ to form a solid solution with a pure perovskite structure. By modifying the zinc oxide content, the sintering behavior of (Bi_0.5Na_0.5)TiO₃ ceramics was significantly improved and the grain size was increased. The piezoelectric coefficient d₃₃ for the 1.0 wt.% ZnO-doped (Bi_0.5Na_0.5)TiO₃ ceramics sintered at 1050 °C was found to be 95 pC/N, and the electromechanical coupling factor k_p = 0.13. However, the piezoelectric coefficient d₃₃ for the 0.5 wt.% ZnO-doped (Bi_0.5Na_0.5)TiO₃ ceramics sintered at 1140 °C was found to be 110 pC/N, and the electromechanical coupling factor k_p = 0.17.     

Transparent polycrystalline MgAl2O4 ceramic fabricated by spark plasma sintering: Microwave dielectric and optical properties

The optical properties and microwave dielectric properties of transparent polycrystalline MgAl₂O₄ ceramics sintered by spark plasma sintering (SPS) through homemade nanosized MgAl₂O₄ powders at temperatures between 1250 °C and 1375 °C are discussed. The results indicate that, with increasing sintering temperatures, grain growth and densification occurred up to 1275 °C, and above 1350 °C, rapid grain and pore growth occurred. The in-line light transmission increases with the densification and decreases with the grain/pore growth, which can be as high as 70% at the wavelength of 550 nm and 82% at the wavelength of 2000 nm, respectively. As the sintering temperature increases, Q×f and dielectric constant ε_r values increase to maximum and then decrease respectively, while τ_f value is almost independent of the sintering temperatures and remains between −77 and −71 ppm/°C. The optimal microwave dielectric properties (ε_r=8.38, Q×f=54,000 GHz and τ_f=−74 ppm/°C) are achieved for transparent MgAl₂O₄ ceramics produced by spark plasma sintering at 1325 °C for 20 min.     

Microstructure and piezoelectric properties of CuO-doped 0.95(K0.5Na0.5)NbO3-0.05Li(Nb0.5Sb0.5)O3 lead-free ceramics

The effects of sintering temperature and the addition of CuO on the microstructure and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05Li(Nb_0.5Sb_0.5)O₃ were investigated. The KNN-5LNS ceramics doped with CuO were well sintered even at 940 °C. A small amount of Cu²⁺ was incorporated into the KNN-5LNS matrix ceramics and XRD patterns suggested that the Cu²⁺ ion could enter the A or B site of the perovskite unit cell and replace the Nb⁵⁺ or Li⁺ simultaneously. The study also showed that the introduction of CuO effectively reduced the sintering temperature and improved the electrical properties of KNN-5LNS. The high piezoelectric properties of d₃₃ = 263 pC/N, k_p = 0.42, Q_m = 143 and tan δ = 0.024 were obtained from the 0.4 mol% CuO doped KNN-5LNS ceramics sintered at 980 °C for 2 h.     

TEM observation of liquid phase sintering in V2O5 modified Zr0.8Sn0.2TiO4 microwave ceramics

The phenomena of liquid phase sintering in the V₂O₅ modified (Zr_0.8, Sn_0.2)TiO₄ (ZST) microwave ceramics has been investigated by using transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDS). The amounts of second phase were too low to be detected by X-ray diffraction (XRD), but could be observed by TEM bright field image. However, the presence of grain boundary phases did not degrade the microwave properties of V₂O₅ modified ZST ceramics. The ?_r value of 37.2, Q × f value of 51,000 (at 7 GHz) and τ_f value of −2.1 ppm/°C were obtained for ZST ceramics with 1 wt% V₂O₅ addition sintered at 1300 °C.     

Low temperature sintering and microwave dielectric properties of CaSiO3–Al2O3 ceramics for LTCC applications

The effects of CuO, Li₂CO₃ and CaTiO₃ additives on the densification, microstructure and microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics for low-temperature co-fired applications were investigated. With a single addition of 1 wt% Li₂CO₃, the CaSiO₃–1 wt% Al₂O₃ ceramic required a temperature of at least 975 °C to be dense enough. Large amount addition of Li₂CO₃ into the CaSiO₃–1 wt% Al₂O₃ ceramics led to the visible presence of Li₂Ca₃Si₆O₁₆ and Li₂Ca₄Si₄O₁₃ second phases. Fixing the Li₂CO₃ content at 1 wt%, a small amount of CuO addition significantly promoted the sintering process and lowered the densification temperature to 900 °C whereas its addition deteriorated the microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics. Based on 10 wt% CaTiO₃ compensation in temperature coefficient, good microwave dielectric properties of ε_r=8.92, Q×f=19,763 GHz and τ_f=−1.22 ppm/°C could be obtained for the 0.2 wt% CuO and 1.5 wt% Li₂CO₃ doped CaSiO₃–1 wt% Al₂O₃ ceramics sintered at 900 °C. The chemical compatibility of the above ceramics with silver during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between silver and ceramics, indicating that the as-prepared composite ceramics were suitable for low-temperature co-fired ceramics applications.     

Enhanced piezoelectric properties of (K0.40Na0.60)0.94Li0.06Nb0.94SbO3 lead-free ceramics by optimizing the sintering temperature

Effects of sintering temperature on the microstructure and electrical properties of (K_0.40Na_0.60)_0.94Li_0.06Nb_0.94SbO₃ (KNLNS) lead-free ceramics are investigated. The grain size gradually becomes larger with increasing sintering temperature from 1055 °C to 1105 °C, and the piezoelectric property could be enhanced by optimizing their sintering temperature. The ceramic sintered at 1075 °C has optimum electrical properties, i.e., d₃₃~272 pC/N, k_p~43.5%, ε_r~1152, tan δ~0.026, and T_C~346 °C. These results show that the sintering temperature can optimize electrical properties of KNLNS ceramics.     

Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature

The preparation and dielectric properties of 3ZnO·B₂O₃ ceramics were investigated. Dense 3ZnO·B₂O₃ ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B₂O₃ structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?_r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τ_f ∼ −80 ppm/°C. The dependences of relative density, ?_r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B₂O₃ ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate.     

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Ba₄Nd_9.33Ti₁₈O₅₄·x wt%Al₂O₃ (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of Al₂O₃ on the microstructure and microwave dielectric properties of Ba₄Nd_9.33Ti₁₈O₅₄ (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al₂O₃ additive gave rise to a second phase BaAl₂Ti₅O₁₄ (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al₂O₃ additive had improved the dielectric properties of the BNT ceramics: increased the Q×f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q×f=12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al₂O₃ added after sintering at 1320 °C for 4 h.     

Room temperature multiferroic properties of Ni-doped Aurivillus phase Bi5Ti3FeO15

Single-phase Aurivillius Bi₅Ti₃Fe_0.5Ni_0.5O₁₅ (BTFN) ceramics were synthesized by the solid-state reaction method. The substitution of Ni for half Fe ions does not introduce magnetic impurity phase but increases magnetic moment more than two orders. The ferroelectric and magnetic Curie temperatures are determined to be 1100 K and 726 K. The room-temperature multiferroic behavior of the BTFN ceramics were demonstrated by the ferroelectric (2P_r=8.5 μC/cm², 2E_c=74 kV/cm) and ferromagnetic (2M_r=27.86 m emu/g, 2H_c=553 Oe) measurements. The ferromagnetism can be ascribed to the aggregation of magnetic ions at the inner octahedra by Ni doping and the spin canting of magnetic-ion-based sublattices via the Dzyaloshinskii-Moriya interaction. The present work suggests the possibility of doped Bi₅Ti₃FeO₁₅ as a potential room-temperature multiferroic.     

Microwave dielectric properties and structure of ZnO-Nb2O5-TiO2 ceramics

Ceramic samples based on ZnO-Nb₂O₅-TiO₂ compositions have been prepared using solid state ceramic route. The work was carried out over a wide range of initial ZnNb₂O₆ and Zn_0.17Nb_0.33Ti_0.5O₂ compounds concentration. The crystal structure and microstructure developments were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was shown that the phase compositions of the samples present itself a columbite type and mixture of two phases—solid solutions of columbite and rutile types.The sintering behavior, permittivity, its temperature coefficients and quality factor had been characterized for ceramic samples in depending on compositions. The permittivity of the samples in this system is within the limits from 24 to 80, τ_? from 150 to −560 ppm/°C. For the samples with τ_? ∼ 0, ?_r ∼ 43.8 and Q·f = 35000 GHz at f = 9 GHz. The comparatively low sintering temperature (≤1080 °C) and high dielectric properties in microwave range make these ceramics promising for application in electronics.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.