Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

Low temperature sintering and microwave dielectric properties of CaSiO3–Al2O3 ceramics for LTCC applications

The effects of CuO, Li₂CO₃ and CaTiO₃ additives on the densification, microstructure and microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics for low-temperature co-fired applications were investigated. With a single addition of 1 wt% Li₂CO₃, the CaSiO₃–1 wt% Al₂O₃ ceramic required a temperature of at least 975 °C to be dense enough. Large amount addition of Li₂CO₃ into the CaSiO₃–1 wt% Al₂O₃ ceramics led to the visible presence of Li₂Ca₃Si₆O₁₆ and Li₂Ca₄Si₄O₁₃ second phases. Fixing the Li₂CO₃ content at 1 wt%, a small amount of CuO addition significantly promoted the sintering process and lowered the densification temperature to 900 °C whereas its addition deteriorated the microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics. Based on 10 wt% CaTiO₃ compensation in temperature coefficient, good microwave dielectric properties of ε_r=8.92, Q×f=19,763 GHz and τ_f=−1.22 ppm/°C could be obtained for the 0.2 wt% CuO and 1.5 wt% Li₂CO₃ doped CaSiO₃–1 wt% Al₂O₃ ceramics sintered at 900 °C. The chemical compatibility of the above ceramics with silver during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between silver and ceramics, indicating that the as-prepared composite ceramics were suitable for low-temperature co-fired ceramics applications.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature

The preparation and dielectric properties of 3ZnO·B₂O₃ ceramics were investigated. Dense 3ZnO·B₂O₃ ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B₂O₃ structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?_r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τ_f ∼ −80 ppm/°C. The dependences of relative density, ?_r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B₂O₃ ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate.     

Sintering behavior and microwave dielectric properties of a new low-permittivity ceramic system Ca(Mg1−xAlx)(Si1−x/2Alx/2)2O6

The diopside ceramics with a formula of Ca(Mg_1−xAl_x)(Si_1−x/2Al_x/2)₂O₆ (x=0.01–0.3) were synthesized via a traditional solid-state reaction method, and their solid solubility, sintering behavior and microwave dielectric properties were investigated. The results revealed that the solubility limit of Al₂O₃ in Ca(Mg_1−xAl_x)(Si_1−x/2Al_x/2)₂O₆, which is defined as x, was between 0.15 and 0.2, and a second phase of CaAl₂SiO₆ presented when the x value reached 0.2. Appropriate Al³⁺ substitution for Mg²⁺ and Si⁴⁺ could promote the sintering process and lower the densification temperature, and a broadened densification temperature range of 1250–1300 °C was obtained for the compositions of x=0.08–0.15. With the increase of the x value, the dielectric constant (ε_r) increased roughly linearly, and the temperature coefficient of frequency (τ_f) showed a rising trend. The Q×f values increased from 57,322 GHz to 59,772 GHz as the x value increased from 0.01 to 0.08, and then they were saturated in the range of x=0.08–0.2. Further increase of the x value (x≥0.25) deteriorated the microwave dielectric properties. Good microwave dielectric properties of ε_r=7.89, Q×f=59,772 GHz and τ_f=−42.12 ppm/°C were obtained for the ceramics with the composition of x=0.08 sintered at 1275 °C.     

Dielectric properties and microstructures of CaSiO3 ceramics with B2O3 addition

The effects of B₂O₃ additives on the sintering behavior, microstructure and dielectric properties of CaSiO₃ ceramics have been investigated. The B₂O₃ addition resulted in the emergence of CaO–B₂O₃–SiO₂ glass phase, which was advantageous to lower the synthesis temperature of CaSiO₃ crystal phase, and could effectively lower the densification temperature of CaSiO₃ ceramic to as low as 1100 °C. The 6 wt% B₂O₃-doped CaSiO₃ ceramic sintered at 1100 °C possessed good dielectric properties: _r = 6.84 and tan δ = 6.9 × 10⁻⁴ (1 MHz).     

TEM observation of liquid phase sintering in V2O5 modified Zr0.8Sn0.2TiO4 microwave ceramics

The phenomena of liquid phase sintering in the V₂O₅ modified (Zr_0.8, Sn_0.2)TiO₄ (ZST) microwave ceramics has been investigated by using transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDS). The amounts of second phase were too low to be detected by X-ray diffraction (XRD), but could be observed by TEM bright field image. However, the presence of grain boundary phases did not degrade the microwave properties of V₂O₅ modified ZST ceramics. The ?_r value of 37.2, Q × f value of 51,000 (at 7 GHz) and τ_f value of −2.1 ppm/°C were obtained for ZST ceramics with 1 wt% V₂O₅ addition sintered at 1300 °C.     

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Ba₄Nd_9.33Ti₁₈O₅₄·x wt%Al₂O₃ (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of Al₂O₃ on the microstructure and microwave dielectric properties of Ba₄Nd_9.33Ti₁₈O₅₄ (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al₂O₃ additive gave rise to a second phase BaAl₂Ti₅O₁₄ (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al₂O₃ additive had improved the dielectric properties of the BNT ceramics: increased the Q×f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q×f=12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al₂O₃ added after sintering at 1320 °C for 4 h.     

Indirect selective laser sintering of epoxy resin-Al2O3 ceramic powders combined with cold isostatic pressing

To fabricate Al₂O₃ ceramic components with complex shape, selective laser sintering (SLS) combined with cold isostatic pressing (CIP) process was used to consolidate Al₂O₃ powder with additive of epoxy resin E06 (ER06) and polyvinyl alcohol (PVA). The starting material preparation combined spray drying with mechanical mixing to formulate compound powder consisting of PVA (1.5 wt%), ER06 (8 wt%) and Al₂O₃ and provide a good fluidity for SLS. Experimental investigations were carried the shrinkage, relative density, bending strength of Al₂O₃-ER06 SLS specimens in order to optimize the laser sintering parameters. It was found that Al₂O₃-ER06 SLS specimens represented acceptable shrinkage, high density and bending strength when laser power, scanning speed, scanning space and layer thickness were, respectively, 21 W, 1600 mm/s, 100 μm and 150 μm. Following that, the SLS specimens were processed through CIP to eliminate the pores in green ceramics. Finally, the optimized SLS/CIP Al₂O₃ specimens were debinded, sintered to produce crack-free Al₂O₃ bodies. The final Al₂O₃ components achieved a relative high density of more than 92% after furnace sintering. The study shows a novel and promising approach to fabricate complex ceramic matrix and ceramic components via indirect SLS and CIP process.     

Sintering of Al2O3-SiC composite from sol-gel method with MgO, TiO2 and Y2O3 addition

Al₂O₃-SiC composite ceramics were prepared by pressureless sintering with and without the addition of MgO, TiO₂ and Y₂O₃ as sintering aids. The effects of these compositional variables on final density and hardness were investigated. In the present article at first α-Al₂O₃ and β-SiC nano powders have been synthesized by sol-gel method separately by using AlCl₃, TEOS and saccharose as precursors. Pressureless sintering was carried out in nitrogen atmosphere at 1600 °C and 1630 °C. The addition of 5 vol.% SiC to Al₂O₃ hindered densification. In contrast, the addition of nano MgO and nano TiO₂ to Al₂O₃-5 vol.% SiC composites improved densification but Y₂O₃ did not have positive effect on sintering. Maximum density (97%) was achieved at 1630 °C. Vickers hardness was 17.7 GPa after sintering at 1630 °C. SEM revealed that the SiC particles were well distributed throughout the composite microstructures. The precursors and the resultant powders were characterized by XRD, STA and SEM.     

Transparent polycrystalline MgAl2O4 ceramic fabricated by spark plasma sintering: Microwave dielectric and optical properties

The optical properties and microwave dielectric properties of transparent polycrystalline MgAl₂O₄ ceramics sintered by spark plasma sintering (SPS) through homemade nanosized MgAl₂O₄ powders at temperatures between 1250 °C and 1375 °C are discussed. The results indicate that, with increasing sintering temperatures, grain growth and densification occurred up to 1275 °C, and above 1350 °C, rapid grain and pore growth occurred. The in-line light transmission increases with the densification and decreases with the grain/pore growth, which can be as high as 70% at the wavelength of 550 nm and 82% at the wavelength of 2000 nm, respectively. As the sintering temperature increases, Q×f and dielectric constant ε_r values increase to maximum and then decrease respectively, while τ_f value is almost independent of the sintering temperatures and remains between −77 and −71 ppm/°C. The optimal microwave dielectric properties (ε_r=8.38, Q×f=54,000 GHz and τ_f=−74 ppm/°C) are achieved for transparent MgAl₂O₄ ceramics produced by spark plasma sintering at 1325 °C for 20 min.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Effects of grinding and firing conditions on CaAl2Si2O8 phase formation by solid-state reaction of kaolinite with CaCO3

The effects of grinding and firing conditions on CaAl₂Si₂O₈ phase formation by solid-state reaction of kaolinite with CaCO₃ were investigated by differential thermal analysis (DTA)–thermogravimetry (TG), X-ray powder diffraction (XRD) and ²⁹Si and ²⁷Al MAS NMR. Unground and ground samples showed similar crystallization behavior at about 850 °C, and the crystallizing temperature was relatively unaffected by grinding. On the other hand, the crystalline products were strongly influenced by the grinding. Gehlenite (Ca₂Al₂SiO₇) was the dominant phase in the unground samples but layer-structured CaAl₂Si₂O₈ was dominant in the ground samples, together with a small amount of anorthite, which is the stable phase. The amount of anorthite gradually increased with higher firing temperature, the sample fired at 1000 °C being almost completely anorthite. Grinding treatment before firing was effective in accelerating the decomposition of CaCO₃ and extending the temperature range for the formation of CaAl₂Si₂O₈, a phase with local structure similar to that of layered CaAl₂Si₂O₈.     

Densification, microstructural evolution and microwave dielectric properties of fluxed sintered 12R-Ba(Ti0.5Mn0.5)O3 ceramics

Doped hexagonal BaTiO₃ (h-BaTiO₃) ceramics have recently been identified as potential candidates for use in microwave dielectric resonators. However, similar to other common microwave ceramics, doped h-BaTiO₃ ceramics require a sintering temperature higher than 1400 °C. In this study, the effects of Bi₂O₃ and Li₂CO₃ on the densification, microstructural evolution and microwave properties of hexagonal 12R-Ba(Ti_0.5Mn_0.5)O₃ ceramics were examined. Results indicate that Bi₂O₃ and Li₂CO₃ are able to effectively reduce the sintering temperature of 12R-Ba(Ti₀₅Mn_0.5)O₃ ceramics through liquid phase sintering while retaining the hexagonal structure and the microwave dielectric properties. The best results were obtained for the 12R-Ba(Ti_0.5Mn_0.5)O₃ with the additions of 5 wt% Bi₂O₃ sintered at 1200 °C (?_r: 36.0, Qf_r: 6779 GHz, and τ_f: 25.3 ppm/°C), and 5 wt% Li₂CO₃ sintered at 1200 °C (?_r: 28.1, Qf_r: 5304 GHz, and τ_f: 35.3 ppm/°C).     

Processing and physical properties of Al2O3/aluminum alloy composites

Porous aluminum oxide (Al₂O₃) preforms were formed by sintering in air at 1200 °C for 2 h. A356, 6061, and 1050 aluminum alloys were infiltrated into the preforms by squeeze casting in order to fabricate Al₂O₃/A356, Al₂O₃/6061, and Al₂O₃/1050 composites, respectively, with different volumes of aluminum alloy content. The content of aluminum alloy in the composites was 10–40% by volume. The resistivity of Al₂O₃/A356, Al₂O₃/6061, and Al₂O₃/1050 composites decreased dramatically from 6.41 × 10¹² to 9.77 × 10⁻⁴, 7.28 × 10⁻⁴, and 6.24 × 10⁻⁴ Ω m, respectively, the four-points bending strength increased from 397 to 443, 435.1, 407.2 MPa, respectively, and the deviations were smaller than 2%. From SEM microstructural analysis and TEM bright field images, the pore volume fraction and the relative density of the composites were the most important factors that affected the physical and mechanical properties. The ceramic phase and alloy phase in Al₂O₃/aluminum alloy composites were found to be homogenized and uniformly distributed using electrical and mechanical properties analysis, microstructure analysis, and image analysis.     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Low temperature and microwave dielectric properties of TiO2/ZBS glass composites

TiO₂ based ceramic/glass composites were prepared by a non-reactive liquid phase sintering (NLPS) using zinc borosilicate (ZBS) glass having the deformation temperature of 588 °C. The compounds of Zn₂SiO₄ and Zn₄B₆O₁₃ were formed after the sintering process, indicating that the ZBS glass was a non-reactive one in this system. For TiO₂/50 vol% ZBS glass composite, the two-stage sintering behavior was conducted as the sintering temperature increased. The former might be correlated to the NLPS process and the latter appeared to be related to the crystallization. The dielectric constant (?_r) was mainly affected by the porosity and obeyed the logarithmic mixing rule. The quality factor (Q × f₀) showed an increase and then a steep decrease after the maximum at 850 °C. TiO₂/50 vol% ZBS glass composite sintered at 900 °C demonstrated 36 in the dielectric constant (?_r) and 7500 GHz in the quality factor (Q × f₀) for an application to LTCC filters.     

Microstructure and dielectric properties control of Ba4(Nd0.7Sm0.3)9.33Ti18O54 microwave ceramics

Microwave ceramics of Ba₄(Nd_0.7Sm_0.3)_9.33Ti₁₈O₅₄ with 0–3 wt% Ag additions were synthesized by a citrate sol–gel method. The BaO–B₂O₃–SiO₂ glass was also added into the sol–gel derived BNST ceramic powders as sintering aids. The undoped, Ag- and BaBS-doped samples can be sintered at 1250 °C, 1150 °C and 1000 °C, respectively. The microstructure and dielectric properties were then controlled by doping Ag or BaBS glass. Near isoaxial grains with about 250 nm and typical columnar grains were obtained for the silver-doped and BaBS-doped samples, respectively. For the <1 wt% silver-doped samples, the dielectric constant and Q × f retained unaltered but τ_f decreased from 9 ppm/°C to 1.4 ppm/°C. With increasing silver content from 1 wt% to 3 wt%, the dielectric constant and τ_f significantly increased but Q × f decreased. For the BaBS-doped samples, both dielectric constant and Q × f decreased but τ_f increased with increasing BaBS content.     

Microwave dielectric properties and structure of ZnO-Nb2O5-TiO2 ceramics

Ceramic samples based on ZnO-Nb₂O₅-TiO₂ compositions have been prepared using solid state ceramic route. The work was carried out over a wide range of initial ZnNb₂O₆ and Zn_0.17Nb_0.33Ti_0.5O₂ compounds concentration. The crystal structure and microstructure developments were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was shown that the phase compositions of the samples present itself a columbite type and mixture of two phases—solid solutions of columbite and rutile types.The sintering behavior, permittivity, its temperature coefficients and quality factor had been characterized for ceramic samples in depending on compositions. The permittivity of the samples in this system is within the limits from 24 to 80, τ_? from 150 to −560 ppm/°C. For the samples with τ_? ∼ 0, ?_r ∼ 43.8 and Q·f = 35000 GHz at f = 9 GHz. The comparatively low sintering temperature (≤1080 °C) and high dielectric properties in microwave range make these ceramics promising for application in electronics.     

Low-temperature firing and microwave dielectric properties of 16CaO–9Li2O–12Sm2O3–63TiO2 ceramics with V2O5 addition

The sintering behaviors and microwave dielectric properties of the 16CaO–9Li₂O–12Sm₂O₃–63TiO₂ (abbreviated CLST) ceramics with different amounts of V₂O₅ addition had been investigated in this paper. The sintering temperature of the CLST ceramic had been efficiently decreased by nearly 100 °C. No secondary phase was observed in the CLST ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLST ceramics with small amounts of V₂O₅ addition could be well sintered at 1200 °C for 3 h without much degradation in the microwave dielectric properties. Especially, the 0.75 wt.% V₂O₅-doped ceramics sintered at 1200 °C for 3 h have optimum microwave dielectric properties of Kr = 100.4, Q × f = 5600 GHz, and TCF = 7 ppm/°C. Obviously, V₂O₅ could be a suitable sintering aid that improves densification and microwave dielectric properties of the CLST ceramics.