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1.
The rate of formation of NiAl2O4 by reaction between single crystals of NiO and Al2O3 can be described by k = 1.1 × 104 exp (−108,000 ± 5,000/ RT ) cm2/s. In NiO the behavior of D as a function of concentration supports the Lidiard theory of diffusion by impurity-vacancy pairs. A good fit of the theory to the experimental results was obtained by assuming that Al3+ ions diffuse as [AlNi· VNi]'pairs. The diffusion coefficient of pairs, Dp , obeys the equation 6.6 × 10−2 exp (−54,000 ± 3,000/ RT ) cm2/s. The free energy of association for pairs was calculated to range from 6.5 kcal/mol at 1789°C to 9.0 kcal/mol at 1540°C. The interdiffusion coefficients in the spinel showed a constant small increase with increasing concentration of Al3+ dissolved in the spinel.  相似文献   

2.
The reaction kinetics for NiCr2O4 formation and the diffusion of Cr3+ ions into single-crystal NiO were studied between 1300° and 1600°C in air. The experimental activation energy for NiCr2O4 formation was about 83 kcal/mol. After incubation, NiCr2O4 formed by a diffusion-controlled process. The origin of pores at the NiO/NiCr2O4 interface is discussed. The concentration profiles of Cr3+ in NiO were linear because the interdiffusion coefficient was directly proportional to the mol fraction Cr3+. Theoretical considerations indicate that the interdiffusion coefficient equals 3/2 the self-diffusion coefficient of Cr3+, which is rate-determining. The interdiffusion coefficient at 1 mol% Cr2O3 can be expressed as =4×10−3 exp (−55,000/RT) cm2 s−1.  相似文献   

3.
Fast lithium ion conducting glass-ceramics have been successfully prepared from the pseudobinary system 2[Li1+ x Ti2Si x P3− x O12]-AlPO4. The major phase present in the glass-ceramics was LiTi2P3O12 in which Ti4+ ions and P5+ ions were partially replaced by Al3+ ions and Si4+ ions, respectively. Increasing x resulted in a considerable enhancement in conductivity, and in a wide composition range extremely high conductivity over 10−3 S/cm was obtained at room temperature.  相似文献   

4.
Partial equilibrium phase diagrams for the systems MgF2-MgO, MgF2-CaO, and MgF2-Al2O3 were determined by differential thermal analysis. Simple eutectics were observed at 8.5 mol% MgO and 1228°± 3°C in the MgF2-MgO system, at 7.5 mol% CaO and 1208°± 3°C in the MgF2-CaO system, and at 2.5 mol% Al2O3 and 1250°± 3°C in the MgF2-Al2O3 system. On the basis of agreements between the activities calculated by the Clausius-Clapeyron equation and Temkin's model using the present data, the eutectic melt consists of Mg2+, F-, and O2- ions in the MgF2-MgO system; Mg2+, Ca2+, F-, and O2- ions in the MgF2-CaO system; and Mg2+, Al3+, F-, and AlO ions in the MgF2-Al2O3 system. Well-defined long needles of MgO in the MgF2-MgO system, less defined needles of CaO in the MgF2-CaO system, and Al2O3 grains in the MgF2-Al2O3 system were observed by optical microscopy.  相似文献   

5.
Glasses with compositions Li1.2M0.2Ge1.8(PO4)3 (M = Al, Ga, Y, Gd, Dy, and La) were prepared and converted to glass-ceramics by heat treatment. The effects of the M3+ ions on the conductivity of the glasses and glass-ceramics were studied. The main phase present in the glass-ceramics was the conductive phase LiGe2(PO4)3. Al3+ and Ga3+ ions entered the LiGe2(PO4)3 structure by replacing Ge4+ ions, but lanthanide ions did not. The glass-ceramics exhibited much higher conductivity than the glasses. With increased ionic radius of the M3+ ions, the conductivity remained almost unchanged at ∼3 × 10−12 S/cm for the glasses, but it decreased from 1.5 × 10−5 to 8 × 10−9 S/cm for the glass-ceramics at room temperature. The higher conductivity for Al3+- and Ga3+-containing glass-ceramics was suggested to result from the substitutions of Al3+ and Ga3+ ions for Ge4+ ions in the LiGe2(PO4)3 structure.  相似文献   

6.
Phase relations in the spinel region of the system FeO-Fe2O3-Al2O3 were determined in CO2 at 1300°, 1400°, and 15000°C and for partial oxygen pressures of 4 × 10−7 and 7 × 10−10 atmospheres at 15OO°C. The spinel field extends continuously from Fe3O4-x to FeAl2O4+z.  相似文献   

7.
The formation of ZnAl2O4 spinel in diffusion couples of Al2O3 and ZnO was investigated between 1000° and 1390°C in air and in air containing 4.8 vol% Cl2 by X-ray diffraction, electron probe microanalysis, and scanning electron microscopy. The rate of formation of a spinel layer obeyed a parabolic rate law and was accelerated remarkably by the presence of Cl2. The interdiffusion coefficient, , and the activation energy, E, were calculated to be 10−8 to 10−9 cm2/s and 123 kcal/mol (514 kJ/mol) in air and 10−7 cm2/s and 31 kcal/mol (130 kJ/mol) in air containing 4.8 vol% Cl2, respectively.  相似文献   

8.
Thermal expansion of the low-temperature form of BaB2O4 (β-BaB2O4) crystal has been measured along the principal crystallographic directions over a temperature range of 9° to 874°C by means of high-temperature X-ray powder diffraction. This crystal belongs to the trigonal system and exhibits strongly anisotropic thermal expansions. The expansion along the c axis is from 12.720 to 13.214 Å (1.2720 to 1.3214 nm), whereas it is from 12.531 to 12.578 Å (1.2531 to 1.2578 nm) along the a axis. The expansions are nonlinear. The coefficients A, B , and C in the expansion formula L t = L 0(1 + At + Bt 2+ Ct 3) are given as follows: a axis, A = 1.535 × 10−7, B = 6.047 × 10−9, C = -1.261 × 10−12; c axis, A = 3.256 × 10−5, B = 1.341 × 10−8, C = -1.954 × 10−12; and cell volume V, A = 3.107 × 10−5, B = 3.406 × 10−8, C = -1.197 × 10−11. Based on α t = (d L t /d t )/ L 0, the thermal expansion coefficients are also given as a function of temperature for the crystallographic axes a , c , and cell volume V.  相似文献   

9.
Studies of the oxidation of Gd and Dy at P O2's from 10−0.3 to 10−14.5 atm and temperatures from 727° to 1327°C indicate both semiconducting and ionic-conducting domains in the sesquioxides formed. At higher temperatures, where dense coarsegrained oxide layers developed, the rate of oxidation in the high- P 02 semiconducting domain yielded oxygen diffusion coefficients in Dy2O3 in excellent agreement with literature values derived from oxidation of partially reduced oxide single crystals. Under the same conditions, the oxidation of Gd yielded oxygen diffusion coefficients in cubic Gd2O3 which are considerably below literature values for monoclinic single-crystal Gd2O3. At lower temperatures, porous scales were formed, and apparent diffusion coefficients derived from oxidation rates show a smaller temperature dependence than the high-temperature data. At low P O2, the oxides behave as ionic conductors, and metal oxidation rates result in estimates of the electronic contribution to the electrical conductivity of the order of 10−6 to 10−7Ω−1 cm−1.  相似文献   

10.
In the determination of the liquidus, solidus, and subsolidus of the system MgO-MgAl2O4 the limits of the solid solution of A1 ions in periclase and Mg ions in spinel were measured. By using both X-ray diffraction and optical techniques, the maximum periclase solid solution was found at 82 wt% MgO, 18 wt% A12O3 (9.5% A13+) and maximum spinel solid solution at 39% MgO, 61 % A1203 (6% Mg++). Periclase and spinel solid solutions existed stably in easily detectable amounts at temperatures above approximately 1500°C.  相似文献   

11.
The vaporization of the system MgO-Cr2O3 was studied in a vacuum of 10−5 torr (10−3N/m2) at 1500° to 1700°C using the Langmuir and Knudsen methods. It was found that the phases in the system vaporize nearly congruently and the logarithm of the vaporization coefficient, α, of MgCr2O4 increases linearly with increasing reciprocal temperature. Alpha tends to unity at a temperature near the melting point (2525±23°C). The additivity rule can be applied to the Langmuir vaporization rates on the basis of the surface area ratios of the phases in the 2-phase system MgO-Cr2O3. The enthalpies of vaporization of MgCr2O4 were 695.0 and 549.2 kcaVmol for activated and equilibrium processes, respectively.  相似文献   

12.
An arc fusion technique was used to grow single crystals of MgO with an aliovalent impurity level of ∼ 250 ppm. Diffusion coefficients for Cr3+ in single-crystal MgO were measured from 1353° to 1553°C using a high-specific-activity isotope,51 Cr. The diffusion coefficient of 51Cr for both arc-grown and vapor-deposited MgO crystals can be characterized by an activation energy of 70.0±2.1 kcal/mol. These results are comparable with the interdiffusion coefficients in Cr2O3-MgO when the interdif-fusion D is extrapolated to low Cr concentrations.  相似文献   

13.
Enthalpies of drop solution for a suite of substituted pollucites with the compositions CsTi x Al1− x Si2O6+0.5 x , 0 ≤ x ≤ 1, which are synthesized using the sol–gel method, have been measured in molten lead borate (2PbO·B2O3) at 701°C. As Ti4+ substitutes for Al3+, the enthalpies of drop solution become less endothermic and show exothermic heats of mixing within the composition range from x = 0.3 to 1. This nonideal mixing behavior is consistent with the trend seen in variation of lattice parameters, and we interpret it to be a result of the short-range order associated with the framework cations Al3+, Si4+, and Ti4+ in the structure. Using enthalpies of drop solution of SiO2, Al2O3, TiO2, and Cs2O, standard molar enthalpies of formation of these phases from their constituent oxides and from the elements are derived for the first time.  相似文献   

14.
We report the first measurements of the structure factor, S ( Q ), and the pair distribution function, G ( r ), of Al6Si2O13 (3:2 mullite) in the normal and supercooled liquid states in the temperature range 1776–2203 K. Measurements are obtained by synchrotron X-ray scattering on levitated, laser-heated liquid specimens. The S ( Q ) shows a prepeak at 2.0 Å−1 followed by a main peak at 4.5 Å−1 and a weak feature at 8 Å−1. The G ( r ) shows a strong (Si,Al)–O correlation at 1.80 Å at high temperature that moves to 1.72 Å as the liquid is supercooled. The second and third nearest neighbor peaks at 3.0 and 4.25 Å sharpen with supercooling. The short-range structure of the high-temperature liquid is similar to the corresponding glasses produced by rapid quenching. Supercooling causes an increase in the concentration of tetrahedral Si4+ ions, which is manifested by the large shift in the first peak to lower ionic distance, r , values in G ( r ). The increase in tetrahedrally coordinated Si4+ ions is offset by an increase in octahedral Al3+ ions. The clustering of the SiO44− tetrahedral units results in increased viscosity of the liquid at temperatures below the melting point, which is consistent with Al6Si2O13 being a fragile liquid.  相似文献   

15.
High-strain-rate superplasticity is attained in a 3-mol%-Y2O3-stabilized tetragonal ZrO2 polycrystal (3Y-TZP) dispersed with 30 vol% MgAl2O4 spinel: tensile elongation at 1823 K reached >300% at strain rates of 1.7 × 10−2– 3.3 × 10−1 s−1. The flow behavior and the microstructure of this material indicate that the MgAl2O4 dispersion should enhance accommodation processes necessary for grain boundary sliding. Such an effect is assumed to arise from an enhancement of the cation diffusion by the dissolution of Al and Mg ions into the ZrO2 matrix and from stress relaxation due to the dispersed MgAl2O4 grains.  相似文献   

16.
The effect on the γ-Al2O3-to-α-Al2O3 phase transition of adding divalent cations was investigated by differential thermal analysis, X-ray diffractometry, and surface-area measurements. The cations, Cu2+, Mn2+, Co2+, Ni2+, Mg2+, Ca2+, Sr2+, and Ba2+, were added by impregnation, using the appropriate nitrate solution. These additives were classified into three groups, according to their effect: (1) those with an accelerating effect (Cu2+ and Mn2+), (2) those with little or no effect (Co2+, Ni2+, and Mg2+), and (3) those with a retarding effect (Ca2+, Sr2+, and Ba2+). The crystalline phase formed by reaction of the additive with γ-Al2O3 at high temperature was a spinel-type structure in groups (1) and (2) and a magnetoplumbite-type structure in group (3). In groups (2) and (3), a clear relationship was found between the transition temperature and the difference in ionic radius of Al3+ and the additive (Δ r ): The transition temperature increased as Δ r increased. This result indicates that additives with larger ionic radii are more effective in suppressing the diffusion of Al3+ and O2− in γ-Al2O3, suppressing the grain growth of γ-Al2O3, and retarding the transformation into α-Al2O3.  相似文献   

17.
The compressive creep behavior and oxidation resistance of an Si3N4/Y2Si2O7 material (0.85Si3N4+0.10SiO2+0.05Y2O3) were determined at 1400°C. Creep re sistance was superior to that of other Si3N4 materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10−11 kg2·m-4·s−1 indicates excellent oxidation resistance.  相似文献   

18.
Anion self-diffusion coefficients normal to (1102) were obtained for single-crystal Al2O3 in a 1.3 × 10 3 N/m2 (10−5 torr) vacuum at 1585° to 1840°C. Tracer was supplied from an initial 650 to 1300 A Al218O3 layer produced by the oxidation of vapor-deposited Al metal films in an 18O2 atmosphere at 520°C. Concentration gradients extended over depths of 3000 to 5000 A and were measured by mass spectrometry of material sputtered from the samples with a beam of Ar+ ions. Crystals which had not been preannealed to remove surface damage displayed enhanced diffusion. Diffusion coefficients from preannealed crystals may be described by D0 =6.4×105cm2/s, with an activation energy of 188 ± 7 kcal/mol. The diffusion is interpreted as an extrinsic vacancy mechanism.  相似文献   

19.
Samarium ions (Sm2+) incorporated into aluminosilicate glasses by a sol-gel process showed persistent spectral hole burning at room temperature. Gels of the system Na2O-Al2O3SiO2 synthesized by the hydrolysis of Si(OC2H5)4, Al(OC4H9)3, CH3 COONa, and SmCl3·6H2O were heated in air at 500°C, then reacted with H2 gas to form Sm2+ ions. Whereas Al3+ ions effectively dispersed the Sm3+ ions in the glass structure, Na+ ions were not effective. The Al2O3-SiO2 glasses proved appropriate for reacting the Sm3+ ions with H2 gas and exhibited the intense photoluminescence of Sm2+ ions. The reaction of Sm3+ ions with H2 in the Al2O2-SiO2 glasses was determined by first-order kinetics, and the activation energy equaled 95 kJ/mol. At 800°C, the maximum photoluminescence of the Sm2+ ions was achieved within 20 min.  相似文献   

20.
Phase relations within the "V2O3–FeO" and V2O3–TiO2 oxide systems were determined using the quench technique. Experimental conditions were as follows: partial oxygen pressures of 3.02 × 10−10, 2.99 × 10−9, and 2.31 × 10−8 atm at 1400°, 1500°, and 1600°C, respectively. Analysis techniques that were used to determine the phase relations within the reacted samples included X-ray diffractometry, electron probe microanalysis (energy-dispersive spectroscopy and wavelength-dispersive spectroscopy), and optical microscopy. The solid-solution phases M2O3, M3O5, and higher Magneli phases (M n O2 n −1, where M = V, Ti) were identified in the V2O3–TiO2 system. In the "V2O3–FeO" system, the solid-solution phases M2O3 and M3O4 (where M = V, Ti), as well as liquid, were identified.  相似文献   

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