5.8‐inch QHD flexible AMOLED display with enhanced bendability of LTPS TFTs

By applying the curve‐type thin film transistor (TFT) with longitudinal strain, TFT parameters do change little down to the 2R bending. The mobility variation range reduces down to 4% compared with 28% of the line‐type channel with transverse strain. The smaller variation is preferred for a high quality display. We clarified that majority carrier's effective mass and scattering rate are dominant factors influencing the bended TFT's performance, which can be controlled by the strain orientation and channel shape. This understanding and improvement was embedded in the 5.8″ flexible QHD active matrix organic light emitting diode panel with multi edge curvature of Galaxy S8. Through this achievement, we made our flexible premium active matrix organic light emitting diode panels more performable, reliable, and highly productive in small R bending circumstance.     

A fully integrated 1‐in. AMOLED display using current feedback based on a five‐mask LTPS CMOS process

Abstract— In the past, a five‐mask LTPS CMOS process requiring only one single ion‐doping step was used. Based on that process, all necessary components for the realization of a fully integrated AMOLED display using a 3T1C current‐feedback pixel circuit has recently been developed. The integrated data driver is based on a newly developed LTPS operational amplifier, which does not require any compensation for Vth or mobility variations. Only one operational amplifier per column is used to perform digital‐to‐analog conversion as well as current control. In order to achieve high‐precision analog behavior, the operational amplifier is embedded in a switched capacitor network. In addition to circuit verification by simulation and analytic analysis, a 1‐in. fully integrated AMOLED demonstrator was successfully built. To the best of the authors' knowledge, this is the first implementation of a fully integrated AMOLED display with current feedback.     

Flexible AMOLED displays on stainless‐steel foil

Abstract— The world's thinnest flexible full‐color 5.6‐in. active‐matrix organic‐light‐emitting‐diode (AMOLED) display with a top‐emission mode on stainless‐steel foil was demonstrated. The stress in the stainless‐steel foil during the thermal process was investigated to minimize substrate bending. The p‐channel poly‐Si TFTs on stainless‐steel foil exhibited a field‐effectmobility of 71.2 cm²/N‐sec, threshold voltage of ?2.7 V, off current of 6.7 × 10¹³ A/μm, and a subthreshold slope of 0.63 V/dec. These TFT performances made it possible to integrate a scan driver circuit on the panel. A top‐emission EL structure was used as the display element, and thin‐film encapsulation was performed to realize a thin and flexible display. The full‐color flexible AMOLED display on stainless‐steel foil is promising for mobile applications because of its thin, light, rugged, and flexible properties.     

A 5.5‐inch full HD foldable AMOLED display based on neutral‐plane splitting concept

Splitting of the mechanical neutral plane is a promising concept for foldable displays because it reduces the folding stress in each layer of the display. We verified the splitting concept experimentally and revealed a linear relation between the relative position of the neutral plane and the logarithm of the adhesive's elastic modulus. As the modulus decreased, the position of the neutral plane approached that of perfect splitting. On the basis of the neutral‐plane splitting concept, we developed 5.5‐inch full high‐definition foldable active matrix organic light‐emitting diode (AMOLED) displays, which endured 150 k inward folding cycles and 150 k outward folding cycles with folding radii of 3 and 5 mm, respectively. This study is expected to improve the flexibility of designing foldable AMOLED displays, enabling better balance of the portability versus practicality trade‐off in mobile displays.     

A flexible full‐color AMOLED display driven by OTFTs

Abstract— Organic thin‐film‐transistor (OTFT) technologies have been developed to achieve a flexible backplane for driving full‐color organic light‐emitting diodes (OLEDs) with a resolution of 80 ppi. The full‐color pixel structure can be attained by using a combination of top‐emission OLEDs and fine‐patterned OTFTs. The fine‐patterned OTFTs are integrated by utilizing an organic semiconductor (OSC) separator, which is an insulating wall structure made of an organic insulator. Organic insulators are actively used for the OTFT integration, as well as for the separator, in order to enhance the mechanical flexibility of the OTFT backplane. By using these technologies, active‐matrix OLED (AMOLED) displays can be driven by the developed OTFT backplane even when they are mechanically flexed.     

World's first large size 77‐inch transparent flexible OLED display

Large flexible organic light‐emitting diode (OLED) display provides various electronic applications such as curved, bendable, rollable, and commercial display, because of its thinness, light weight, and design freedom. In this work, the process flow and key technologies to fabricate the world's first large size 77‐inch transparent flexible OLED display are introduced. “White OLED on TFT + color filter” method is used to fabricate the aforementioned display. On both thin‐film transistor and color filter substrates, transparent polyimide (PI) was used as plastic substrate with multi‐barrier. In case of a transparent flexible display, the multi‐barrier is required for the additional consideration to overcome the decrease of transmittance due to the difference in refractive index of the conventional multi‐barrier. We developed the special multi‐barrier to increase transparency with superior water vapor transition rate characteristic. The optimized amorphous indium gallium zinc oxide thin‐film transistors were employed on the multi‐barrier, and it shows the highly uniform electrical performance and reliability on plastic substrate. Also, the typical panel failure mechanism during laser lift‐off process caused by a particle in PI is studied, and a sacrificial layer was suggested between PI and a carrier glass to reduce the panel failure. Finally, we successfully realized the world's first 77‐inch transparent flexible OLED display with ultra‐high‐definition resolution, which can be rolled up to a radius of 80 mm with a transmittance of 40%.     

Improvement in image quality of a 5.8‐in. OTFT‐driven flexible AMOLED display

Abstract— The image quality of an OTFT‐driven flexible AMOLED display has been improved by enhancing the performance of OTFTs and OLEDs. To reduce the operating voltage of OTFTs on a plastic film, Ta²O⁵ with a high dielectric constant was used as a gate insulator. The organic semiconductor layer of the OTFT was successfully patterned by a polymer separator, which is an isolating wall structure using an organic material. The OTFT performance, such as its current on/off ratio, carrier mobility, and spatial uniformity on the backplane, was enhanced. A highly efficient phosphorescent OLED was used as a light‐emission device. A very thin molybdenum oxide film was introduced as a carrier‐injection layer on a pixel electrode to reduce the operating voltage of the OLED. After an OTFT‐driven flexible AMOLED display was fabricated, the luminance and uniformity on the display was improved. The fabricated display also showed clear moving images, even when it was bent at a low operating voltage.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

Threshold‐voltage‐compensation methods for AMOLED pixel and analog buffer circuits

Abstract— New pixel‐circuit designs for active‐matrix organic light‐emitting diodes (AMOLEDs) and a new analog buffer circuit for the integrated data‐driver circuit of active‐matrix liquid‐crystal displays (AMLCDs) and AMOLEDs, based on low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS‐TFTs), were proposed and verified by SPICE simulation and measured results. Threshold‐voltage‐compensation pixel circuits consisting of LTPS‐TFTs, an additional control signal line, and a storage capacitor were used to enhance display‐image uniformity. A diode‐connected concept is used to calibrate the threshold‐voltage variation of the driving TFT in an AMOLED pixel circuit. An active load is added and a calibration operation is applied to study the influences on the analog buffer circuit. The proposed circuits are shown to be capable of minimizing the variation from the device characteristics through the simulation and measured results.     

Alleviation of abnormal NBTI phenomenon in LTPS TFTs on polyimide substrate for flexible AMOLED

This letter investigates the negative‐bias temperature instability (NBTI) behavior of p‐channel low‐temperature polycrystalline silicon thin‐film transistors (LTPS TFTs) on plastic substrate. The measurements reveal that the threshold‐voltage positive shift is highly correlated to the passivation of grain boundary trap states. By applying the established phenomenon such as NBTI recovery and H diffusion from PI substrate, a new model is introduced to explain the mechanism and verified by the experiment. With the thick buffer and bottom metal layer or newly processed PI substrate, we succeeded in adjusting the NBTI behavior of LTPS TFTs on plastic substrate.     

Active‐matrix OLED backplanes based on LTPS for small molecules and polymers

Abstract— A four‐mask low‐temperature poly‐Si (LTPS) TFT process for p‐ and n‐channel devices has been developed. PECVD‐deposited amorphous silicon was recrystallized to polycrystalline‐silicon with single‐area excimer‐laser crystallization, while the gate dielectric was fabricated by PECVD deposition of a SiH₄‐N₂O‐based silicon oxide. Formation of drain and source was carried out with self‐aligned ion‐beam implantation. To prove the potential capability of these devices, which are suitable for conventional and inverted OLEDs alike, several functional active‐matrix backplanes implementing different pixel circuits have been produced. This active‐matrix backplane process has been customized to drive small molecules as well as polymers regardless if its structure is top or bottom emitting.     

Low‐temperature fabrication of 5‐in. QVGA flexible AMOLED display driven by OTFTs using olefin polymer as the gate insulator

Abstract— A 5‐in. QVGA flexible AMOLED display driven by OTFTs has been fabricated at a low temperature of 130°C. A polyethylene naphthalate film was used as the flexible substrate and an olefin polymer was used as the gate insulator for the OTFT. This layer was formed by spin‐coating and baking at 130°C. Pentacene was used as the organic semiconductor layer. The OTFT performance to drive the flexible display with QVGA pixels in terms of current on/off ratio, carrier mobility, and spatial uniformity on the backplane have been obtained. Phosphorescent and fluorescent OLEDs were used as light‐emitting devices on a flexible display. Those layers were formed by vacuum deposition. After the flexible display was fabricated, a clear and uniform moving image was obtained on the display. The display also showed a stable moving image even when it was bent.     

Automotive display innovation: 12.3‐inch automotive free‐form curved cluster

As the market share of automotive display increased, special used displays are required; BOE developed 12.3‐inch automotive free‐form curved cluster. For this product, free‐form and curved design can be matched in vehicle preferably. Meanwhile, it is designed in automotive class, which means that this product will perform excellently in severe environment.     

High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS) thin‐film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active‐matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.     

In‐cell capacitive‐type touch sensor using LTPS TFT‐LCD technology

Abstract— An LTPS TFT‐LCD with an in‐cell capacitive‐type touch sensor has been proposed and prototyped. The embedded sensor in the pixel was designed to amplify the voltage change caused by capacitive coupling between the detection electrode and conductive object (user's finger). No touch force is needed for sensor actuation and no extra electrical connection for the counter‐substrate is needed. The validity of the observed voltage difference of the sensor output on the TFT substrate was examined. The proposed architecture is considered to be applicable to larger LCDs for various applications such as smartphones, automotive navigation systems, and mobile internet devices.     

Letter: Novel approaches to realize high‐resolution AMOLED display

Two different approaches to realize high‐resolution active‐matrix organic light‐emitting device (AMOLED) display were delivered. By adopting specific organic light emitting diode (OLED) structure with pre‐pattern electrode and the utilization of color filter, we successfully simplify the fabrication process with fine metal mask (FMM)‐free or one‐FMM solutions. Each approach was demonstrated with a 4.4″ panel with 413 ppi pixel density based on real stripe RGB. Both panels possessed low power consumption, low reflectivity, and superior NTSC performance. Because the utilization of FMM was avoided or reduced, higher production yield, higher throughput, and lower cost could be achieved. Therefore, these two approaches are very promising for mass production of high‐resolution AMOLED display.     

A 3.0‐in. 308‐ppi WVGA AMOLED with a top‐emission white OLED and color filter

Abstract— A 3.0‐in. 308‐ppi WVGA top‐emission AMOLED display with a white OLED and color filters, driven by LTPS TFTs demonstrating a color gamut of >90% and a Δ(u′,v′) of <0.02 is reported. A white‐emission source with a unique device structure was developed using all fluorescent materials and yielded efficiencies of 8.45% and 16 cd/A at 4000 nits with CIE color coordinates of (0.30, 0.32).     

Fabrication of 5.8‐in. OTFT‐driven flexible color AMOLED display using dual protection scheme for organic semiconductor patterning

Abstract— A 5.8‐in. wide‐QQVGA flexible color active‐matrix organic light‐emitting‐diode (AMOLED) display consisting of organic thin‐film transistors (OTFTs) and phosphorescent OLEDs was fabricated on a plastic film. To reduce the operating voltage of the OTFTs, Ta₂O₅ with a high dielectric constant was employed as a gate insulator. Pentacene was used for the semiconductor layer of the OTFTs. This layer was patterned by photolithography and dry‐etched using a dual protection layer of poly p‐xylylene and SiO₂ film. Uniform transistor performance was achieved in the OTFT backplane with QQVGA pixels. The RGB emission layers of the pixels were formed by vacuum deposition of phosphorescent small molecules. The resulting display could clearly show color moving images even when it was bent and operated at a low driving voltage (below 15 V).     

An LTPS active‐matrix process with PECVD doped N+ drain/source areas

Abstract— A low‐temperature polysilicon active‐matrix process without the need for ion implantation to dope drain and source areas of TFTs has been developed. A doped silicon layer is deposited by PECVD and structured prior to the deposition of the intrinsic silicon for the channel. The dopant is diffused and activated during the excimer‐laser crystallization step. N‐channel test TFTs with different geometries were realized. The TFT properties (mobility, on/off ratio, saturation, etc.) are suitable to realize AMLCDs and AMOLED displays and to integrate driver electronics on the displays. In addition to simple TFTs, a full‐color 4‐in. quarter‐VGA AMLCD was realized. The complete display (including photolithographic masks, active‐matrix backplane, and color‐filter/black‐matrix frontplane), and an addressing system were developed and manufactured at the Chair of Display Technology, University of Stuttgart, Germany. The substitution of ion doping by PECVD deposition overcomes a major limitation for panel sizes in poly‐Si technology and avoids large investment costs for ion‐implantation equipment.     

New applications for LTPS array technology including lab‐on‐chip and MEMS actuators

Abstract— The use of low‐temperature poly‐Si technology for new applications beyond displays is presented. These applications include lab‐on‐chip, MEMS actuators, and sensors. As a key example, the use of high‐voltage poly‐Si TFTs for rapid heating and temperature control, as is required for DNA amplification within lab‐on‐chip, is described in detail. Other examples given include MEMS ink‐jet printer heads and the formation of photosensors and impedance sensors for optical and electronic input, which can be used not only in displays and lab‐on‐chip, but also for new applications such as fingerprint sensing and particle counting.