Flexible quantum dot light‐emitting devices for targeted photomedical applications

Quantum dot light‐emitting devices (QLEDs), originally developed for displays, were recently demonstrated to be promising light sources for various photomedical applications, including photodynamic therapy cancer cell treatment and photobimodulation cell metabolism enhancement. With exceptional emission wavelength tunability and potential flexibility, QLEDs could enable wearable, targeted photomedicine with maximized absorption of different medical photosensitizers. In this paper, we report, for the first time, the in vitro study to demonstrate that QLEDs‐based photodynamic therapy can effectively kill Methicillin‐resistant Staphylococcus aureus, an antibiotic‐resistant bacterium. We then present successful synthesis of highly efficient quantum dots with narrow spectra and specific peak wavelengths to match the absorption peaks of different photosensitizers for targeted photomedicine. Flexible QLEDs with a peak external quantum efficiency of 8.2% and a luminance of over 20,000 cd/m² at a low driving voltage of 6 V were achieved. The tunable, flexible QLEDs could be employed for oral cancer treatment or diabetic wound repairs in the near future. These results represent one fresh stride toward realizing QLEDs' long‐term goal to enable the wide clinical adoption of photomedicine.     

All solution‐processed white quantum‐dot light‐emitting diodes with three‐unit tandem structure

Quantum‐dot light‐emitting diodes (QLEDs) are promising candidates for next generation displays. White QLEDs which can emit red, green and blue colors are particularly important; this is because the combination of white QLEDs and color filters offers a practical solution for high‐resolution full‐color displays. In this work, we demonstrate all‐solution processed three‐unit (red/green/blue) white tandem QLEDs for the first time. The white tandem devices are achieved by serially connecting the red bottom sub‐QLED, the green middle sub‐QLED and the blue top sub‐QLED using the inter‐connecting layer (ICL) based on ZnMgO/PEDOT:PSS heterojunction. With the proposed ICL, the two‐unit tandem QLEDs exhibit a high current efficiency of 22.22 cd/A, while the three‐unit white QLEDs exhibit evenly separated red, green and blue emission with a CIE coordinate of (0.30, 0.44), a peak current efficiency of 4.75 cd/A and a high luminance of 4206 cd/m². Displays based on the developed white QLEDs exhibit a wide color gamut of 114% NTSC. This work confirms the effectiveness of the proposed ZnMgO/PEDOT:PSS ICL and the feasibility of making all‐solution processed tandem white QLEDs by using the proposed ICL.     

Toward high‐resolution,inkjet‐printed,quantum dot light‐emitting diodes for next‐generation displays

We have investigated the possibility of fabricating quantum dot light‐emitting diodes (QLEDs) using inkjet printing technology, which is the most attractive method for the full‐color patterning of QLED displays. By controlling the quantum dot (QD) ink formulation and inkjet printing condition, we successfully patterned QLED pixels in the 60‐in ultrahigh definition TV format, which has a resolution of 73 pixels per inch. The inkjet‐printed QLEDs exhibited a maximum luminance of 2500 cd/m². Although the performance of inkjet‐printed QLEDs is low compared with that of QLEDs fabricated using the spin‐coating process, our results clearly indicate that the inkjet printing technology is suitable for patterning QD emissive layers to realize high‐resolution, full‐color QLED displays.     

High efficiency and ultra‐wide color gamut quantum dot LEDs for next generation displays

Colloidal quantum dot‐based hybrid light‐emitting diodes (QLEDs) have been demonstrated that exhibit quantum efficiencies (EQEs) >10% for all three fundamental colors red, green, and blue (21% EQE, 82 cd/A for green). This is the first report of a green QLED with EQE >20% and current efficiency >80 cd/A. The devices have the longest lifetimes reported in the literature (280k hrs) and extremely well‐tuned color fidelity. The narrow QLED emission spectra (full width at half maximum < 30 nm) and well‐controlled peak wavelengths generate a color gamut covering >170% of the National Television System Committee (NTSC) 1987 color space and ~90% of the Rec. 2020 color space. This color gamut is larger than that of OLED televisions in mass production and is the largest of all QLEDs reported. Additionally, these devices are completely fabricated using solution‐processing techniques. The extremely desirable properties of high efficiency, color tunability/fidelity, long lifetime, and low cost processing from solutions make QLED technology disruptive and will lead to next generation displays.     

Highly transparent and conductive CdO thin films as anodes for organic light‐emitting diodes: Film microstructure and morphology effects on performance

Abstract— Highly conductive and transparent CdO thin films have been grown on glass and on single‐crystal MgO(100) by MOCVD at 400°C and were used as transparent anodes for fabricating small‐molecule organic‐light emitting diodes (OLEDs). Device response and applications potential have been investigated and compared with those of control devices based on commercial ITO anodes. It is demonstrated that highly conductive CdO thin films of proper morphology can efficiently inject holes into such devices, rendering them promising anode materials for OLEDs. Importantly, this work also suggests the feasibility of employing other CdO‐based TCOs as anodes for high‐performance OLEDs.     

Optical characteristics of tandem and microcavity tandem organic light‐emitting devices

Abstract— In pursuit of the further enhancement of the luminance and efficiency of organic light‐emitting devices (OLEDs), it is worthy of exploring what benefits could be obtained by combining two luminance‐enhancement techniques, i.e., microcavity and tandem OLEDs. Furthermore, a deeper understanding of the optics in tandem OLEDs will be useful for the design and optimization of tandem OLEDs. In this paper, the optical characteristics of noncavity and microcavity tandem OLEDs are theoretically and experimentally investigated. By the use of rigorous electromagnetic modeling of OLEDs, the radiation characteristics of tandem OLEDs as a function of device structures are analyzed and correspondingly, the guidelines for optimizing the performance of tandem devices are suggested. By making use of the analytical results, it is shown that with well‐designed microcavity conditions and device structures, a five‐fold enhancement in luminance in the normal direction can be achieved with cavity‐tandem devices having only two emitting units. A very high efficiency of 200 cd/A for a rather broad brightness range of 100–4000 nits is demonstrated with a phosphorescent cavity two‐unit device.     

Analyzing and tuning emission characteristics of top‐emitting organic light‐emitting devices

Abstract— Top‐emitting organic light‐emitting devices (OLEDs) have several technical merits for application in active‐matrix OLED displays. Generally, stronger microcavity effects inherent with top‐emitting OLEDs, however, complicate the optimization of device efficiency and other viewing characteristics, such as color and viewing‐angle characteristics. In this paper, using the rigorous classical electromagnetic model based on oscillating electric dipoles embedded in layered structures, the emission characteristics of top‐emitting OLEDs as a function of device structures will be analyzed. From comprehensive analysis, trends in the dependence of ewmission characteristics on device structures were extracted, and, accordingly, a general methodology for optimizing viewing characteristics of top‐emitting OLEDs for display applications will be suggested. The effectiveness of the analysis and the methodology was confirmed by experimental results.     

Electrical characterization and modelling of top‐emitting PIN‐OLEDs

Abstract— Positively doped, intrinsic, negatively doped organic light‐emitting diodes (PIN‐OLEDs) have been shown to exhibit high efficiency and a long lifetime compared to conventional small‐molecule OLEDs (SM‐OLEDs). The improved performance of PIN‐OLEDs makes them attractive for use in display applications. Knowledge of the electrical load exhibited by these devices is used to develop an equivalent electrical‐circuit model. Such models are used by circuit designers to assist with the precise design of active‐matrix‐display driver circuits used in such applications. In this paper, the development of a SPICE model for a top‐emitting PIN‐OLED stack is reported.     

The influence of the hole transport layers on the performance of blue and color tunable quantum dot light‐emitting diodes

The performance of the blue quantum dot light‐emitting diodes (QLEDs) is largely affected by the hole transport layers (HTLs). As a consequence of the deep valance band level of blue quantum dots (QDs), hole injection is relatively difficult in blue QLEDs. To favor the hole injection, HTLs with high hole mobility and deep‐lying highest occupied molecular orbital level are desired. In this work, various HTLs and their influence on the performance of blue QLEDs are demonstrated. Devices with poly(N‐vinylcarbazole) (PVK) HTL exhibit the highest external quantum efficiency while devices with poly[9,9‐dioctylfluorene‐co‐N‐(4‐(3‐methylpropyl))‐diphenylamine] (TFB) exhibit the lowest driving voltage. By combining the advantages of PVK and TFB, the blue QLEDs with TFB/PVK bilayered HTL simultaneously exhibit a low driving voltage of 2.6 V and a high external quantum efficiency of 5.9%. Moreover, the exciplex emission at the interface of HTL/QDs is also observed, and the emission intensity can be tuned by modulating the hole injection. By utilizing PVK doped with 25% poly(3‐hexylthiophene) (P3HT) as HTL, exciplex emission is significantly enhanced at low driving voltage while QD emission is dominant at high driving voltage. By combining the exciplex emission and the QD emission, the emission color can be effectively tuned from red to blue as the driving voltage changing from 2 to 10 V.     

Low‐temperature fabrication of 5‐in. QVGA flexible AMOLED display driven by OTFTs using olefin polymer as the gate insulator

Abstract— A 5‐in. QVGA flexible AMOLED display driven by OTFTs has been fabricated at a low temperature of 130°C. A polyethylene naphthalate film was used as the flexible substrate and an olefin polymer was used as the gate insulator for the OTFT. This layer was formed by spin‐coating and baking at 130°C. Pentacene was used as the organic semiconductor layer. The OTFT performance to drive the flexible display with QVGA pixels in terms of current on/off ratio, carrier mobility, and spatial uniformity on the backplane have been obtained. Phosphorescent and fluorescent OLEDs were used as light‐emitting devices on a flexible display. Those layers were formed by vacuum deposition. After the flexible display was fabricated, a clear and uniform moving image was obtained on the display. The display also showed a stable moving image even when it was bent.     

A novel electron‐transport material for organic light‐emitting devices

Abstract— A nanocrystalline electron‐transport material [ET68] was introduced into organic light‐emitting devices (OLEDs). By integrating a p‐doped transport system and phosphorescent emitters, a very bright and stable device could be obtained. Furthermore, 40% saving in power consumption can be achieved when the efficient pixels with ET68 were applied to AMOLEDs.     

Tuning of electrical and optical properties of organic LEDs using combinatorial device fabrication

The capabilities of combinatorial methods are presented in order to get a detailed understanding of the electrical and optical properties of organic light‐emitting devices (OLEDs), to optimize their performance, and to provide reliable data for device modeling. We show results on multilayer OLEDs ranging from the conventional copper‐phthalocyanine (CuPc)/N,N′di‐(naphtalene‐1‐yl)‐N,N′‐diphenyl‐benzidine (NPB) and tris‐(8‐hydroxy‐quinolinato)aluminum (Alq) tri‐layer device to double‐doped deep‐red‐emitting OLEDs.     

Coupled 3D master equation and 1D drift‐diffusion approach for advanced OLED modeling

A novel simulation approach for excitonic organic light‐emitting diodes (OLEDs) is established by combining a continuous one‐dimensional (1D) drift‐diffusion (DD) model for the charge carrier dynamics with a three‐dimensional (3D) master equation (ME) model describing the exciton dynamics in a multilayer OLED stack with an additional coupling to a thin‐film optics solver. This approach effectively combines the computational efficiency of the 1D DD solver with the physical accuracy of a discrete 3D ME model, where excitonic long‐range interactions for energy transfer can be taken into account. The coupling is established through different possible charge recombination types as well as the carrier densities themselves. We show that such a hybrid approach can efficiently and accurately describe steady‐state and transient behavior of optoelectronic devices reported in literature. Such a tool will facilitate the optimization and characterization of multilayer OLEDs and other organic semiconductor devices.     

Efficiency enhancement of solution‐processed single‐layer blue‐phosphorescence organic light‐emitting devices having co‐host materials of polymer (PVK) and small‐molecule (SimCP2)

Abstract— A new type of single‐layer blue‐phosphorescence organic light‐emitting devices (OLEDs) containing poly(9‐vinylcarbazole) (PVK) and small‐molecule‐based amorphous ambipolar bis(3,5‐di(^9H‐carbazol‐9‐yl)phenyl) diphenylsilane (SimCP2) as the co‐host material have been demonstrated. All active materials [PVK, SimCP2, Flrpic (blue‐phosphorescence dopant), and OXD‐7 (electron transport)] were mixed in a single layer for solution processing in the fabrication of OLEDs. The SimCP2 small‐molecule host has adequate high electron and hole‐carrier mobiltieis of ～10^?4 cm²/V‐sec and a sufficiently large triplet state energy of ～2.70 eV in confining emission energy on FIrpic. Based on such an architecture for single‐layer devices, a maximum external quantum efficiency of 6.2%, luminous efficiency of 15.8 cd/A, luminous power efficiency of 11 lm/W, and Commision Internale de l'Eclairage (CIE^x,y) coordinates of (0.14,0.32) were achieved. Compared with those having PVK as the single‐host material, the improvement in the device performance is attributed to the balance of hole and electron mobilities of the co‐host material, efficient triplet‐state energy confinement on FIrpic, and the high homogeneity of the thin‐film active layer. Flexible blue‐phosphorescence OLEDs based on solution‐processed SimCP2 host material (withou PVK) have been demonstrated as well.     

Solution‐processable thermally activated delayed fluorescence emitters for application in organic light emitting diodes

Solution‐processed organic light emitting diodes (OLEDs) have been fabricated using the thermally activated delayed fluorescence (TADF) emitter, DACT‐II, and its soluble derivative, tBu‐DACT‐II, as emitting dopants. DACT‐II reportedly exhibits very high external quantum efficiencies (EQEs) in vacuum‐processed OLEDs. The solution‐processed DACT‐II‐based and tBu‐DACT‐II‐based OLEDs exhibited external quantum efficiency exceeding the theoretical upper limit of classical fluorescent OLEDs.     

Active‐matrix organic light‐emitting diode displays with indium gallium zinc oxide thin‐film transistors and normal,inverted, and transparent organic light‐emitting diodes

Abstract— Active‐matrix organic light‐emitting diode (AMOLED) displays have gained wide attention and are expected to dominate the flat‐panel‐display industry in the near future. However, organic light‐emitting devices have stringent demands on the driving transistors due to their current‐driving characteristics. In recent years, the oxide‐semiconductor‐based thin‐film transistors (oxide TFTs) have also been widely investigated due to their various benefits. In this paper, the development and performance of oxide TFTs will be discussed. Specifically, effects of back‐channel interface conditions on these devices will be investigated. The performance and bias stress stability of the oxide TFTs were improved by inserting a SiO^x protection layer and an N²O plasma treatment on the back‐channel interface. On the other hand, considering the n‐type nature of oxide TFTs, 2.4‐in. AMOLED displays with oxide TFTs and both normal and inverted OLEDs were developed and their reliability was studied. Results of the checkerboard stimuli tests show that the inverted OLEDs indeed have some advantages due to their suitable driving schemes. In addition, a novel 2.4‐in. transparent AMOLED display with a high transparency of 45% and high resolution of 166 ppi was also demonstrated using all the transparent or semi‐transparent materials, based on oxide‐TFT technologies.     

Device‐dependent angular luminance enhancement and optical responses of organic light‐emitting devices with a microlens‐array film

Abstract— By taking the organic emitter apodization calculated from electromagnetic theory as input, the angular luminance enhancement of organic light‐emitting devices (OLEDs) with a microlens‐array film (MAF) can be further evaluated by the ray‐tracing approach. First, the OLEDs of different Alq³ thickness are fabricated and their angular luminance measurements are compared to simulation results. Second, mode analyses for different layers are performed to estimate the enhancement potential of the MAF‐attached devices. Finally, by decreasing the Alq³ thickness, increasing the viewing angle, and attaching the MAF, the EL spectral peak shifts of the OLEDs seem irregular, but the spectral blue shifts induced by the optical structures are all explained by the optical responses (EL spectra divided by the intrinsic PL spectrum). In conclusion, the organic emitters with higher off‐axis‐angle luminous intensity cause lower out‐coupling efficiency but gain higher enhancement after the MAF is attached. With the choices of apodizations and microstructures, the tailored or customized angular radiation patterns can be also made possible.     

A flexible full‐color AMOLED display driven by OTFTs

Abstract— Organic thin‐film‐transistor (OTFT) technologies have been developed to achieve a flexible backplane for driving full‐color organic light‐emitting diodes (OLEDs) with a resolution of 80 ppi. The full‐color pixel structure can be attained by using a combination of top‐emission OLEDs and fine‐patterned OTFTs. The fine‐patterned OTFTs are integrated by utilizing an organic semiconductor (OSC) separator, which is an insulating wall structure made of an organic insulator. Organic insulators are actively used for the OTFT integration, as well as for the separator, in order to enhance the mechanical flexibility of the OTFT backplane. By using these technologies, active‐matrix OLED (AMOLED) displays can be driven by the developed OTFT backplane even when they are mechanically flexed.     

Luminous‐efficiency improvement of solar‐cell‐integrated high‐contrast organic light‐emitting diode by applying distributed Bragg reflector

Abstract— Solar‐cell‐integrated organic light‐emitting diodes (OLEDs) were fabricated with both high contrast ratio and energy‐recycling ability. However, the luminous efficiency of the integrated devices is reduced to 50% of that of conventional top‐emitting OLEDs. A novel structure to recover the luminous efficiency from 50% to near 85% by applying a distributed Bragg reflector (DBR) made of 20 layers of GaN/AlN was demonstrated. It saves about 40% of the electric power than that of a device without a DBR. The contrast ratio remains high compared to that of conventional OLEDs. In this paper, simulations were conducted first to prove our models and assumptions. Then, two types of thin‐film solar cells — CdTe and CIGS solar cells — were used. They had different contrast ratios as well as viewing‐angle properties. Finally, the emission spectrum was calculated to be 11 nm FWHM, which is narrower than that for the emission spectrum of a typical microcavity OLED and has the advantage of having saturated colors.     

Flexible organic light‐emitting‐diode‐based photonic skin for attachable phototherapeutics

Phototherapeutics is both safely noninvasive and can be employed to treat a variety of sites and diseases. Current rigid and bulky conventional light sources, such as LED or laser‐based phototherapy devices, are difficult to transport and use for regular irradiation treatments. To solve this problem, flexible organic light‐emitting diode (OLED) light sources are the best candidates, and if applied very thinly as a skin‐like platform, the ultimate attachable phototherapeutics can be realized. We demonstrated a very thin flexible OLED‐based photonic skin with a total thickness of 6 μm for application in attachable phototherapeutics. It was optimized by controlling the peak wavelengths (600–700 nm) and irradiation interval of the flexible OLED thus improving the regeneration effect of the artificial skin by up to 70%. In addition, when the flexible OLED‐based photonic skin was attached to a dressing film before being applied to the skin, it delivered the same electro‐optical properties, while protecting against external contamination. The OLED skin on the dressing film had an operating lifetime of more than 100 h. These results confirmed the applicability of flexible OLED‐based photonic skin to various light treatment areas, such as surgical wounds that require periodic irradiation.