Blumlein型脉冲形成网络设计

为了产生驱动高阻脉冲X光管的快前沿平顶脉冲,开展了级联B线主要组成单元Blumlein型脉冲网络的研究。在网络阻抗和电长度一定时,从Blumlein型脉冲形成网络级数、级电容杂散电感、开关参数和隔离电感4个方面开展了影响输出脉冲前沿、过冲、顶降、反冲和预脉冲因素的研究。研究表明级电容杂散电感和开关导通电阻使输出脉冲严重畸变。实验表明设计的网络阻抗7.8Ω,输出脉宽65.2 ns,前沿18.6 ns,与预期一致。     

云闪反冲流光过程的电磁场计算及其影响因素分析

针对云闪反冲流光的电磁辐射问题,基于偶极子法建立了云闪反冲流光过程的三维电磁场计算模型,研究获得了观测方位角、反冲流光传播速度以及通道弯曲对其地面电磁场计算的影响规律.结果表明:除中间过渡场区以内的地面电场外,观测方位角越大,斜向云闪通道地面电磁场的幅值越小;反冲流光传播速度越大,相应地面电磁场的幅值越大、脉冲宽度越窄;云闪通道弯曲将导致地面电磁场波形出现不同程度的起伏波动,但沿斜向通道主干附近出现的随机弯曲,基本不会影响其地面电磁场波形的整体走势.     

用快速电光偏转器对激光脉冲削波

介绍了用快速电光偏转器实现激光脉冲剂波的原理．用该方法可以轻易获得很大范围以内所需任意宽度的激光脉冲．理论上讨论了激光焦斑、调制小孔大小、扫描速度和激光脉冲宽度的关系；并在实验上用φ０．３６的小孔从２０ｎｓ的调Ｑ激光脉冲削波，获得了前沿１４０ｐｓ．脉冲宽度为２８０ｐｓ的窄脉冲。     

超短光脉冲的测量

1　前言　　飞秒级超短光脉冲的产生技术与脉冲形状及频率啁啾测量方法的研究一同发展起来。适用于这种超短光脉冲的测量方法仅有非线性相关法。其中 ,使用二次谐波产生晶体的强度自相关法正被广泛用于超短光脉冲波形测量。在该法中 ,使被测光脉冲产生一可变的时间延迟 ,使用由非线性光学晶体产生的二次谐波来测量两个脉冲的重合。该法虽然不能测量光脉冲的正确形状 ,但可获得脉冲的大概宽度。相对于此 ,近年提出了基于光电二极管及发光二极管的双光子吸收的自相关测量方法。该法通过测量双光子吸收电流来获得与二次谐波产生测量方法同样的…     

微波脉冲压缩研究

简要介绍了微波脉冲压缩技术的原理和实现方法,对储能切换法、能量倍增器法和功率二进压缩器法的实验原理进行了阐述。为了获得高功率的输出脉冲进行了L波段单路以及双路储能切换法脉冲压缩的实验,获得了GW级的输出脉冲。在此基础上对微波脉冲压缩的前景以及即将开展的工作进行了一个展望。     

面向全光信号处理的三角形光脉冲产生技术

三角形光脉冲在时域范围内具有前后沿恒定变化特性,使得其在全光信息处理领域获得了广泛应用。主要针对目前国内外提出的两类三角形光脉冲产生方法：（1）电光法;（2）全光法,简单介绍了几种具体的获得稳定三角形光脉冲串的方法,从所产生三角形脉冲的重复频率、脉冲宽度以及系统稳定性、实验优缺点等方面进行分类比较,并重点介绍了一种利用连续波光调制结合色散所致功率衰落的脉冲生成方法。     

基于Mach-Zehnder干涉仪的自相似激光器压缩系统设计

为了研究自相似脉冲在Mach-Zehnder干涉仪的压缩特性，采用非线性薛定谔方程对自相似脉冲的演化和压缩进行了模拟，分析了基于级联单模光纤的Mach-Zehnder干涉仪的光纤参数对脉冲压缩的影响。结果表明，在不考虑高阶色散的情况下，当上臂的两种单模光纤长度分别为8.16 m和2.16 m、下臂的单模光纤长度为8.16 m时，获得半峰全宽为27.85 fs、峰值功率为1860.59 W、基座能量比例为10.241%的最佳压缩脉冲；考虑高阶色散时，脉冲在单模光纤中传输呈现出峰值功率增大、基座增大的现象，且脉冲右移不利于输出基座较小的压缩脉冲；当3阶色散系数小于0.001 ps³/km时，利用Mach-Zehnder干涉仪来压缩能获得质量较好的飞秒脉冲。该研究结果对于自相似脉冲的压缩研究具有一定的参考价值。     

频率步进脉冲信号的功率测量

为了测量频率步进脉冲信号的功率值，需要将已有的脉冲测量技术加以改进.以频谱仪为测量工具，分别采用谱线法和包络法测量信号功率，为避免使用脉冲退敏因子，提出了一种更为快捷的测量方法.不同测量方法下的最大误差仅为1.08 dB.测量结果表明，新方法能以较快的速度在大的带宽范围内获得准确的脉冲信号功率值.     

脉冲镀银工艺研究

本实验研究了单脉冲、双脉冲电镀在镀银中的应用，进行了电镀工艺参数的选取．将直流、单脉冲、双脉冲镀银层的防腐蚀性能、均匀性以及深镀能力方面进行了比较。得出了双脉冲优于单脉冲；而单脉冲又优于直流，并获得部分工艺参数。     

基于交叉相位调制的高阶孤子压缩效应的研究

从描述双脉冲传输的耦合非线性薛定谔方程组出发，利用分步傅立叶变换方法，研究了高阶孤子脉冲的压缩效应。结果表明，在交叉相位调制(XPM)的作用下，高阶孤子在传输过程中不仅可被压缩，且存在着最佳压缩光纤长度；采用超高斯脉冲作为初始输入波形更易获得较短的压缩光脉冲；在泵浦脉冲脉宽一定的条件下，信号脉冲的压缩因子随着其初始输入脉宽的增加而增大。     

Anomalous voltage overshoot during turn-off of thin-film n-channelSOI MOSFETs

An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over a subnanosecond time scale, the charge dynamics related to the bipolar action are essential to explain this voltage overshoot     

Ultra-Wideband Pulse Train Generation Based on Turbo-Switch Structures

A simple configuration is proposed and experimentally demonstrated to generate ultra-wideband (UWB) monocycle pulses based on a turbo-switch structure which consists of two reflective semiconductor optical amplifiers (RSOAs). The first RSOA generates an inversed pulse train of the injected signal through the cross-gain modulation, while the second RSOA introduces an overshoot. The overshoot can be enhanced by properly adjusting the currents applied to both of the two RSOAs, therefore, the UWB monocycle pulse train is successfully obtained. By cascading turbo-switches, the polarity-inversed UWB monocycle pairs and the UWB doublet pulse train are numerically realized.      

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

In this paper, a peculiar attention is turned towards the understanding of the current overshoot occurring during the forming operation in resistive switching memory devices. This phenomenon is attributed to the discharge of a parasitic capacitance in parallel to the resistive device in simple 1R (one resistor, no transistor/diode selector) architectures. The impact of such an overshoot is analyzed on both NiO and HfO₂-based memory elements by performing measurements with different setups (quasi-static and pulse measurements). We show that the parasitic event is more severe as the forming voltage in the memory device increases. Moreover, it is shown that the post-forming resistance cannot be simply adjusted by a current compliance available on semiconductor parameter analyzers, since this internal limiter is ineffective in the microsecond range for compliance levels lower than the current spike. The current overshoot playing a detrimental role on the electrical performances of resistive devices, it must be carefully monitored when assessing the electrical performances in simple 1R architectures.     

Subnanosecond pulse generation in the VUV by dual-wavelength pumpedstimulated rotational Raman scattering

A novel scheme to generate a subnanosecond pulse in VUV spectral region is proposed, by applying a dual-wavelength pumping method in conjunction with polarization switching technique to the stimulated rotational Raman scattering process. Optimum conditions for the efficient conversion and short pulse generation are presented through numerical model calculations. It is theoretically shown that the duration of the first anti-Stokes pulse of a VUV pump laser can be shorten to 0.72 ns. Since the anti-Stokes pulse is generated at a frequency within the gain profile of the pump laser, the proposed process is applicable to a seed pulse generation for subnanosecond pulse amplification by the pump laser medium in the VUV region     

Validation and test issues related to noise induced by parasitic inductances of VLSI interconnects

Shows the results of studies of noise induced by various combinations of parasitic capacitances and inductances. Interconnects are simulated with parameters obtained from a 0.18 /spl mu/m process. The four kinds of noise addressed are (i) crosstalk pulse; (ii) crosstalk speedup and slowdown; (iii) oscillatory noise; (iv) combination of oscillatory noise and crosstalk pulse. The crosstalk effects induced by a combination of mutual capacitance and mutual inductance can be larger than those induced by mutual capacitance alone, even if capacitive crosstalk dominates. For certain interconnects that are capacitively and inductively coupled, transitions in the same direction on an aggressor and victim line can cause speedup or slowdown, depending on timing parameters. A similar observation holds for transitions in opposite directions. We also observe that oscillatory noise can combine with crosstalk pulse under certain skew conditions and give rise to a large magnitude of noise. We show that inductance induced noise can be a problem in medium length interconnects. Because such interconnects can occur in combinational logic blocks, the generation of suitable vectors for test and validation of such logic blocks is of concern.     

Rise Time and Gain Fluctuations of an Electrooptical Amplified Switch Based on Multipulse Injection in Semiconductor Optical Amplifiers

Subnanosecond electrooptical switching times with 26-dB extinction ratio were obtained by using semiconductor optical amplifiers driven by a multipulse injection current. The multipulse switching current was generated by superimposing fast electronic pulse signals in a microwave resistive combiner. Although very fast switching is achievable, nonlinear behavior and circuits parasitic induce gain fluctuations and overshooting during the off–on process. Theoretical and experimental results show that the reduction of parasitics is an important parameter for improving the switching performance. The multipulse injection technique can improve the switching speed for a chosen degree of overshoot.      

基于超辐射机理相对论返波管的实验研究进展

基于超辐射机理相对论返波管由短脉冲电子束(脉宽几个纳秒)驱动,利用短脉冲电子束的超辐射效应能产生高峰值功率、高峰值转换效率、快速上升前沿的纳秒/亚纳秒微波脉冲。本文对近几年来国内外超辐射返波管器件实验研究进行了全面的评述,报道了超辐射返波管器件的最新进展及趋势,并指出发展中存在的一些关键问题,为开展返波管器件中的超辐射机理研究提供了详实的资料。     

Antenna radiation pattern measurement using time-to-frequency transformation (TFT) techniques

A method of inferring microwave antenna radiation patterns over wide bandwidths from a series of subnanosecond pulse measurements is described. Monochromatic patterns can be inferred from the time-domain measurements with simple apparatus. Results are presented which show that the method is inherently insensitive to errors caused by reflections from the environment.     

Shuttle Experiment to Demonstrate High-Accuracy Global Time And Frequency Transfer

The concept of a high-accuracy global time and frequency transfer system is discussed. A hydrogen maser clock onboard a space vehicle combined with a microwave Doppler cancellation system can provide direct frequency transfer with an accuracy of 10-14 and time transfer accurate to 1 ns. The addition of short pulse laser techniques provides subnanosecond time transfer accuracy which can be used to calibrate the microwave system.     

Overshoot-controlled RLC interconnections

How overshoot in the step response of a circuit involving an RLC line can be controlled using a combination of driver and line resistance that depends on the load capacitance is shown. The no-peak condition or its equivalent is used to relate line parameters to the driver and load impedances. This no-peak condition generalizes the impedance matching customarily used for lossless lines, i.e. it provides an alternative to the traditional choice R_D=√ L/C. The results allow improved circuit response without risk of overshoot, for example, by reduction of driver resistance below √L/C for cases where line resistance is unavoidable and/or where load capacitance is not negligible compared to line capacitance. The algebraic formulas derived are more effective than case-by-case numerical simulations for analyzing scaling and technology issues, whether on-chip, or at the packaging, board, or system levels