Uniaxial anisotropy by "radiomagnetic" treatment; controlling factors in a new process

A new process-an electron-"radiomagnetic" treatment-for obtaining high-remanence, low-coercive-force loops in magnetic alloys was recently announced. As an example, 2-MeV electron irradiation of 6-mil-thick ring laminations of polycrystalline 5-80 Mo Permalloy with 10¹⁷e/cm²in an applied circumferential magnetic field of 0.2 Oe atsim100degC produced record highs in remanence (∼6700 G) for this material. Additional studies of this process have been made to determine some of the controlling factors and the range of application. In particular, the effects of the dose (number of e/cm²) and of the preirradiation magnetic properties were examined. The results show that: 1) for a given dose of1.1 times 10^{17}2-MeV e/cm², the relative change in remanence (DeltaB_{r}/B_{r}) is always positive, ranging from 10 to 50 percent, but varies inversely with the preirradiation value of remanence (Br); 2) for the same dose, the relative change in coercive force (DeltaH_{c}/H_{c}) also depends upon the preirradiation value of remanence, but in a different way. ForB_{r} < 5000G,DeltaH_{c}/H_{c}is either negative or zero. ForB_{r} > 5000G,DeltaH_{c}/H_{c}is positive, ranging from 20 to 150 percent, and increases linearly withB_{r}; 3) if the dose is reduced tosim0.8 times 10^{17}e/cm², thenDeltaH_{c}/H_{c}is reduced to a tolerable level (∼10 percent) with no significant sacrifice in the positive gain in remanence and rectangularity. Hence, there are optimum dose ranges in the "radio-magnetic" treatments of alloys, where significant gains in remanence may be obtained without appreciable increases in coercive force.     

New stable state of bubbles containing Bloch lines

A new kind of bubble having two stable states for a bias field HBhas been found in thin garnet films. The bubble becomes smaller with increasing HBand disappears abruptly at some critical fieldH_{C1}. However, it does not collapse atH_{C1}. When HBis lowered, it comes into sight suddenly at another critical fieldH_{C2}. This means that for HBbetweenH_{C1}andH_{C2}the bubble has two stable states, one for a large bubble and the other for an unobservably small bubble. This has been well explained in terms of the stability of bubbles containing a definite number of Bloch lines.     

Wide PRIME-current range for all-magnetic shift registers

In an all-magnetic resistance-type shift register, a PRIME current pulsei_{p}(t), of amplitude Ip, is applied to Npand Nbturns through the minor and major apertures, respectively. For given operation frequencyf, the ratioR = I_{p}^{max}/I_{p}^{min}, whereI_{p}^{min} < I_{p} < I_{p}^{max}is the PRIME range of bistable operation, is maximized by matchingN_{p}/N_{b}so thatI_{p}^{max}values determined by spurious ZERO buildup and ONE dropout are the same. For a rectangular (or dc)i_{p}(t), the matchedN_{p}/N_{b}is fixed by the core properties, and R^maxis limited (e.g., <7). However, ifi_{p}(t)rises gradually, the matchedN_{p}/N_{b}depends also on the rise time Trofi_{p}(t). The lowerfis, with corresponding larger Tr, the smaller is the matchedN_{p}/N_{b}, and the larger is R^max. Calculation ofRis carried for ramp and half-sinusoidali_{p}(t)waveforms. The latter, for instance, atT = 25degC yields R^maxvalues of 14.0 and 22.0 forfof 1.0 and 0.5 kc/s respectively. Such wide PRIME ranges permit reliable register operation in a wide temperature range without resorting to temperature compensation of Ip. Experimental results are in agreement with the calculation.     

Magnetic bubble device scaling and density limits

Scaling of magnetic bubble devices to smaller bubble sizes and higher density is considered. Drive field requirements, materials requirements, fabrication requirements, current requirements, and detector signal-to-noise ratio are all calculated as a function of bubble size and related to practical limits imposed by bubble materials, fabrication techniques, and electromigration limits. It is concluded that "conventional" bubble devices using Permalloy bars can be made practical with 1-μm bubble domains (storage densitysim6 times 10^{6}bits/cm²). Although it may be possible to extend these Permalloy bar devices to even smaller bubbles, it seems more likely that other bubble devices such as contiguous disk devices or bubble lattice devices will in fact be used for densities greater than 6 × 10⁶bits/cm².     

Limits of validity of the one-dimensional wall theory for bubble materials

It is shown that the one-dimensional studies of the wall surrounding a bubble domain do not violate some necessary self-consistency requirements. Moreover, it is shown that the ratio of the magnetostatic self energy (which is neglected in these studies) to the total one-dimensional wall energy isT/Q, whereTis of the order of 1 for typical film thickness of a typical bubble material. This justifies the use of the one-dimensional wall for these materials, as long as the quality factorQ = K/(2piMmin{s}max{2})is large.     

Static and anhysteretic magnetic properties of tapes

The anhysteretic remanencebar{M}_{ar}(H_{o},T)of solidified suspensions of magnetic particles with predominant shape anisotropy is calculated from first principles for small dc fields Hoand arbitrary temperatureT < T_{B}(blocking temperature), describing the particle interactions by a mean field and assuming constant decrement of the ac field,2H_{d}per cycle. ForH_{d}< 2H_{o}, the anhysteretic distribution of particle magnetizations is found to be subject to the condition that the net internal dc fieldbar{H}_{i}is a minimum, and, for small Ho, to the condition,bar{H}_{i} = 0. The theory yieldsbar{M}_{ar}(H_{o},T)as a unique function of independently measurable static magnetic material properties, i.e., it contains no adjustable parameters and is hence quantitatively related to experimental data. Further, according to theory, ifbar{M}_{ar}(H_{o},T,T_{m})denotesbar{M}_{ar}as acquired in Hoat T and measured atT_{m}, bar{M}_{ar}(H_{o},T,T_{m} = T)is independent ofTforH_{d} ll 2H_{o}, andbar{M}_{ar}(H_{o},T,T_{m} neq T) = [M_{s}(T_{m})/M_{s}(T)] cdot bar{M}_{ar}(H_{o},T,T_{m} = T). The thermoremanent magnetization acquired in Hoand measured at a temperatureT_{m} ll T_{B},bar{M}_{thr}(H_{o},T_{m}), is related tobar{M}_{ar}(H_{o},T = T_{m}, T_{m})bybar{M}_{thr}(H_{o},T_{m}) = [M_{s}(T_{m})/M_{s}(T_{B})]bar{M}_{ar}(H_{o},T=T_{m},T_{m}), where TBis the blocking temperature below whichbar{M}_{thr}becomes thermally stable. Up to a constant factor of about 2, the theoretical results agree quantitatively with the experimental data on all materials that correspond to the premises of the theory, i.e., solidified suspensions, tapes in particular, of particles having predominant shape anisotropy.     

Change of RF susceptibility and parametric oscillations of the magnetization of stripe films in magnetic fields normal to the surface

Multidomain ferromagnetic resonance (FMR) for Permalloy magnetic fills (thickness 2700 Å) 83 percent Ni with rotatable anisotropy was experimentally observed with an external magnetic field applied normal to the sample surface. The lower frequency branch of multidomain FMR was excited when the RF magnetic fieldhwas oriented along the film plane; forhoriented parallel to the fieldH_{perp}the higher frequency branch was excited. The dependence of the resonant fieldH_{perp}on the frequency of fieldhfor multidomain and single-domain FMR was determined. Increasing the RF fieldhoriented alongH_{perp}gave rise to oscillations of magnetization with the frequency(1/2)f, wherefis the pumping frequency. The dependence of the amplitude of these oscillations on the strength of the RF fieldhand on the magnetizing fieldH_{perp}was investigated.     

Stripe-domain dynamics in bubble-domain circuits

It is widely known that bubble domains can exist when the bias field is between the elliptic instability (runout) field Heand the bubble collapse field Hbc. Values for Heand Hbcwere calculated by Thiele. It is not widely recognized that long stripe domains can also exist in the bottom 20% of this range. Stripes are stable up to the "stripe contraction" field, Hsc, which is about 0.02 M/μ0above Hefor thickness over intrinsic length,h/l, values from 4 to 10. (Hbcis about 0.10 M/μ0above He.) Values for Hscwere calculated by Kooy and Enz of Philips Research Labs. in 1960, although the importance of their result to bubble-domain devices was not apparent at the time. The velocity of the domain tip during stripout and contraction such as occurs during domain detection or transfer is important for calculating maximum circuit speeds. This is given byV = cG (H-H_{sc}), whereHis the field (bias field plus local field from currents or Permalloy elements),Gis the wall mobility, andcis a constant approximately equal to 0.5.     

High-frequency propagation and failure of asymmetric half-disk field access magnetic bubble device elements

High-frequency propagation characteristics and failure modes in 14-μm period, 1.8-μm gap, asymmetric half-disk field-access device were studied using a high-speed optical sampling technique. Propagation elements as well as normal and hand gun corners and chevron structures were included. The operating bias margin at 1MHz, for a structure that had 1.2 MHz as highest possible frequency, was about half of the margin for frequencies of 200 kHz and below. The phase lag between the bubble leading wall and the instantaneous rotating field direction was nearly 90° as the bubble moved through the center of the element where the lag was the greatest. The peak velocity of the leading wall of 55 m/s and the trailing wall of 46 m/s is attributed to bubble interaction with the Permalloy structure creating a ∼125 Oe in-plane field that greatly increases the free bubble "saturation" velocity.     

Dielectric behaviour of a ferrofluid subjected to a uniform magnetic field

The electric susceptibility of samples of ferrofluids subjected to a uniform magnetic fieldHwas measured. The electric susceptibilitychiis dependent on the magnitude of the magnetic field and on the relative direction between the electric fieldEand the magnetic fieldH. 1) WhenEis perpendicular toH, frac{partialchi_{perp}}{partialH} < 02) WhenEis parallel toH, frac{partialchi_{parellel}}{partialH} > 0These results have been interpreted as a magneto-electric directive effect. A model is proposed, based on the assumption that the magnetic particles are roughly ellipsoidal and conducting grains.     

Models of elastic and inelastic flux switching

The totaldot{phi}(t)waveform of a square-loop magnetic core switched by MMFF(t)from negative remanencephi = -phi_{r}is composed of elasticdot{phi}_{epsilon}(t), decaying inelasticdot{phi}_{i}(t), and bell-shaped main inelasticdot{phi}_{ma}(t). The worst delta noise in a coincident-current memory core pair is essentiallydot{phi}_{i}(t). The sources of these components and the staticphi(F)curve are explained qualitatively by means of the random variations of the energy gradient vs. domain-wall position: elastic wall displacements and elastic rotation of magnetization inducedot{phi}_{epsilon}(t); minor inelastic wall displacements of essentially constant wall areas inducedot{phi}_{i}(t); and major inelastic wall displacements (involving domain collisions) of varying wall areas inducedot{phi}_{ma}(t). Semiempirical models for thedot{phi}components are based on the characteristics of these displacements. A satisfactory agreement is obtained between these models anddot{phi}(t)oscillograms of a thin ferrite core.     

On spontaneous nucleation in field-accessed bubble devices

The dependence ot the in-plane drive field at which bubble domains spontaneously nucleate in field-accessed bubble devices has been investigated as a function ofH_{k} - 4piM_{s}and of spacer thickness between the bubble film and permalloy propagation elements. The experiments were carried out on amorphous GdCoMo bubble films with T-bar and Y-bar structures. For a given structure and spacer thickness the nucleation field increases linearly withH_{k} - 4piM. Larger spacer thicknesses also lead to increased nucleation fields. A model based on the Stoner-Wohlfarth astroid is compared to these data and found to be useful in explaining the qualitative trends, but to be in poor quantitative agreement. It is concluded that since the drive field required in a device is proportional to4piM_{s}, Q - 1 = (H_{k} - 4piM_{s})/4piM_{s}must be greater than some minimum value for a given device structure and spacer thickness to permit reliable device operation.     

Computer simulation of the operation of a magnetic bubble domain propagation circuit modeled after a current-access device

The operation of a bubble-domain straight-line propagation circuit has been simulated successfully. This simulation has been achieved by our approximating the motion of an s = 0 frozen-azimuth bubble placed under a drive fieldH_{Z}(X, Y, T)= -H_{p} cdot cos [2pi(X/R_{X} - n(T)/4)] cdot exp [-(Y/R_{Y})^{2}]. The simulation has been generated from a previously developed numerical scheme to simulate the motion of a bubble, whose domain shape and magnetization structure along its domain wall were variable. The drive field has been modeled after a dual conductor-sheet, current-access propagation structure, which has a bit period RXand a transverse width on the order of2R_{Y}. The entire field contour has been advanced stepwise in the positiveXdirection by an increase of the integern(T), which represents the drive-phase number. The bubble motion has been observed during the first six drive phases to produce operating margin diagrams for drive frequencies of 250 KHz, 796 KHz and 1 MHz. The method of calculation and the results of the simulation are given.     

Characterization of magnetic bubble generators

Two types of magnetic bubble generators suitable for a field-access bubble memory have been tested at 1.00 kHz bit rate at in-plane rotating fields above 15 Oe. The bias field margins of the generators at 30 Oe rotating field are equal to or greater than those of loop propagation. Both designs are based on the principle of stretching and cutting seed bubbles circulating around a Permalloy disk. Functions of stretching, cutting and transferring in the generator sequence are accomplished either with Permalloy elements or pulsed current conductors. The operating conditions of the generators in terms of current pulse amplitudes, widths and phase angles are presented. Among the two designs, namely Permalloy-stretch and conductor-stretch generators, the latter has a wider phase-angle margin.     

Bias susceptibility measurements in thin permalloy films

Susceptibility measurements at 5000 Hz have been performed in the easy and hard directions on two 80-20 Permalloy films (1000 Å, 1 cm in diameter) cut from large samples. The experimental results agree with the predictions of the Hoffmann theory. The susceptibility parallel to the average direction ofMis found to be proportional to1/(H - H_{k})^{7/4}or1/(H_{k} - H)^{7/4}when the net field is large enough to prevent blocking.     

Operation of 3µm bubble serial loop devices designed on single level masking

An all-permalloy single mask level design for a serial loop circuit has been developed and successfully operated using 3 μm bubbles. The design of individual elements for a single level circuit such as generator, replicator and annihilator which were compatible with half-disk propagation patterns was successfully investigated and optimization of permalloy and SiO2spacer film thickness was achieved. The small capacity test chips fabricated provided 13-16 Oe "window margins" with circular drive field ranges of 40 to 50 Oe at 100 kHz. The critical stretching pulse phase margin for replication, which was the minimum phase margin for all functions was found to be 10 degrees. Details of design and characteristics are also discussed including operating margin dependence on frequency and temperature.     

Bubble propagation by disks formed by ion-implantation

The investigation of implantation conditions for bubble propagation points to the necessity for a minimum dose (1.5 times 10^{16}ions cm²) and a sufficiently thick profile (0.4 μ). The use of flat profiles gives uniform implanted layers and allows values of the maximum defect concentration far away from the amorphization threshold. Unlike in permalloy circuits, bubble stability and bias field margins do not increase with the drive field. The propagation is not critically dependent upon disk diameter and spacing.     

Helical anisotropic magnetic film

The magnetic coupling between the magnetization in two nonmagnetostrictive Ni-Fe layers separated by a SiO layer has been investigated by means of a transverse susceptibility measurement. The main results are that 1) the coupling energy Ec per Unit area of the multilayered film has a form ofE_{c}= -A cos (phi_{1}-phi_{2}), wherephi_{1}-phi_{2}is the angle between the magnetization vectors in the two Ni-Fe layers, and 2) the dependence of the coupling constant on the thickness b of the intermediate SiO layer can be interpreted quantitatively by the combination of the coupling energy due to Néel's topography model and that due to the magnetostatic interaction between the magnetic free poles appearing at the edges of the two Ni-Fe layers. The former coupling energy is given byE_{c1} = -frac{p}{2sqrt{2}}omega^{2}M^{2} exp(-sqrt{2}pb) cos (phi_{1}-phi_{2})wherep=2pi/LandLandware the wavelength and the amplitude of the undulation of the interface between Ni-Fe and SiO layers, respectively. The latter is given byE_{c2} = frac{2M^{2}D^{2}}{R} ln (frac{R}{D+b}) cos (phi_{1}-phi_{2})whereDis the thickness of each Ni-Fe layer, andRis the radius of the film.     

The influence of applied tensile stress on power loss in Co-rich amorphous Co-Fe-Si-B ribbons with induced magnetic anisotropy

The influence on power loss PTof applied tensile stress σ in amorphous (Co0.89Fe0.11)72Mo3Si15B10(lambda_{s} > 0) and Co73Mo2Si15B10(lambda_{s} < 0) ribbons with different induced magnetic anisotropy Kuis reported. The losses are measured under sinusoidal flux conditions atf = 50Hz,J_{max} = 0.57T and atf = 400Hz,J_{max} = 0.10T. Measurements are carried out on samples in a stress-relieved state and with magnetic anisotropies induced by stress or field annealing. Atf = 50Hz, a minimum m Ptversus σ is observed. The σ-value (sigma_{min}) corresponding to the minimum PTincreases with increasing |Ku|. Atf = 400Hz, a minimum in PTversus σ is observed in the samples with induced magnetic anisotropy, whereassigma_{min} = 0in the stress-relieved samiales. However, no correlation between andsigma_{min}and Kuis possible from the present data.     

New fabrication technique for magnetic bubble circuits with submicron dimensions

A new technique which permits the fabrication of submicrometer bubble propagation circuits has been described. Straight line patterns and contiguous zigzag patterns are combined with an appropriate registration to form bubble propagation patterns. The straight line pattern width corresponds to the gap width in the Permalloy bubble propagation circuits. By controlling the exposure time in fabricating straight line photoresist patterns, submicrometer pattern gaps are easily obtained using photomasks with 1 μm minimum features. The 4 μm period and 0.5 μm gap width permalloy circuits fabricated using this technique provide promising propagation characteristics for 1 μm bubbles: 60 Oe bias field margin at 60 Oe drive field and 25 Oe minimum propagation drive field.