ZnFe2O4纳米晶的性能

用ＰＥＧ凝胶法合成出不同平均粒径的ＺｎＦｅ２Ｏ４纳米晶。用ＴＥＭ和ＸＲＤ分析其结构、粒径和形貌。用磁天平仪和红外光谱仪（ＩＲ）等手段研究其性能。结果表明ＺｎＦｅ２Ｏ４纳米晶在室温下有磁性，表面不饱和离子配位数降低。     

以尿素为沉淀剂制备纳米氧化锌粉体

本文以尿素,硝酸锌为原料,采用均匀沉淀法制备了纳米级ＺｎＯ．以ＴＧ－ＤＴＡ热分析,红外光谱及ＸＲＤ,ＴＥＭ,激光衍射粒度分析仪等测试手段,对纳米级ＺｎＯ的粉体结构和形貌进行了研究。结果表明,在４５０℃下热处理得到的纳米ＺｎＯ粉体结晶性能良好,改变反应条件,制备了平均粒径在１５－８０ｎｍ,粒度分布窄,分散性好的纳米ＺｎＯ粉体。     

多种基底上溅射沉积ZnO薄膜的结构

在玻璃基底和四种硅基底上用反应式直流磁控溅射法制备了ＺｎＯ薄膜。用ＡＥＳ和ＸＲＤ对薄膜结构和组分进行测试,结果表明,五种基底上生长的ＺｎＯ薄膜在不同程度上都具有优良的纵均匀性、明显的ｃ轴择优取向和较高的结晶度,而硅基底上薄膜的结构普遍优于玻璃基底上沉积的薄膜。     

ZnO压敏陶瓷的晶界结构

用ＸＲＤ、ＳＥＭ、ＴＥＭ研究了低压ＺｎＯ压敏陶瓷的相结构与晶界结构，证实了晶界相的不连续性，发现低压ＺｎＯ－Ｂｉ２Ｏ３－ＴｉＯ２系中ＺｎＯ－ＺｎＯ晶粒直接接触区晶界宽度约为４５ｎｍ，以及烧结过程中晶界上ＺｎＯ纳米级单晶的迁移行为并计算出ＺｎＯ晶界移动激活能Ｑｍ。     

ZnO线性电阻性能研究

ＺｎＯ线性电阻是一种新型的以ＺｎＯ为主的陶瓷电阻。本文研究了降温速度和烧结温度对ＺｎＯ线性电阻性能的影响，利用ＳＥＭ、ＥＰＭＡ和ＸＲＤ等技术研究其微观结构及晶相组成，根据提出的ＺｎＯ线性电阻的导电模型，对有关现象给予解释。     

掺杂V2O3系PTC陶瓷电极的研究

本文采用一次烧渗法制备出掺杂Ｖ２Ｏ３系ＰＴＣ陶瓷的Ａｇ－Ｚｎ－Ｔｉ电极，测量了电极的电学性能，采用差热—失重分析、ＸＲＤ分析和电子探针Ｘ射线衍射显微分析等方法研究了电极的结构，同时对电极与陶瓷基体的接触状态进行了分析。研究结果表明：在电极与陶瓷基体间获得良好的欧姆接触，Ｚｎ和Ｔｉ固溶进入Ａｇ晶格而形成固溶体，Ｚｎ对形成欧姆接触具有重要影响。     

高能球磨法制备纳米晶Zn铁氧体

用高能球磨法制备了纳米晶Ｚｎ铁氧体。通过样品的Ｍｏｅｓｓｂａｕｅｒ谱及ＸＲＤ谱的测定,研究了纳米晶的形成过程。结果表明：球磨的３ｈα－Ｆｅ２Ｏ３即与ＺｎＯ发生机械化学反应生成Ｚｎ铁氧体,这种反应是通过先形成α－Ｆｅ２Ｏ３－ＺｎＯ固溶体而进行的。制得的纳米晶铁氧体有一定的晶格畸变。     

CaO—Al2O3—SiO2系白色微晶玻璃中的晶相及其演变

应用差热分析和Ｘ射线衍射谱研究了若干以ＺｎＳ为晶核剂的Ｒ２Ｏ－ＣａＯ－Ａｌ２Ｏ３－ＳｉＯ２系白色微晶玻璃。根据差热结果确定了四个不同的晶化处理温度。晶化结果表明：本系统玻璃在较低温度下即开始晶体，且均以α－硅灰石为主晶相，这可用ＺｎＳ与α－硅灰石间晶核常数的匹配来解释。     

CaO-Al2O3-P2O5-ZnO玻璃水泥的形成

首次在１４５０℃合成了以「ＰＯ４」和「ＡｌＯ４」形成网络结构的、具有良好本征水硬性的ＣａＯ－Ａｌ２Ｏ３－Ｐ２Ｏ５－ＺｎＯ玻璃水泥,分析了形成玻璃水泥的基本理论依据。应用光学显微镜,Ｘ射线衍射（ＸＲＤ）、电子探针微区分析（ＥＰＭＡ）、Ｆｏｕｒｉｅｒ红外光谱（ＩＲ）和Ｘ射线光电子能谱（ＸＰＳ）分析了Ｚｎ＾２＋对玻璃水泥的相组成和相形态形成及其结构的影响,并分析了对水泥水硬性的影响规律。     

超细肤色ZnO制备的新工艺研究

报道了在碱式碳酸锌热解过程中添加适量碳酸氢氨制得超肤色ＺｎＯ粉末的新方法，应用化学分析，ＸＲＤ，ＴＥＭ等方法对产品进行分析测试，结果表明，用该法合成的ＺｎＯ呈夫色，粒径小，近似球形，适用于化妆品，医药，颜料等领域。     

射频溅射ZnO作为GaN厚膜生长缓冲层的工艺研究

采用射频磁控溅射法制备出了适用于HVPE-GaN厚膜生长的ZnO缓冲层,利用X射线衍射(XRD)和原子力显微镜(AFM)和光致发光(PL)等分析方法表征了ZnO缓冲层以及HVPE-GaN厚膜的晶体性能。实验结果表明,采用溅射功率为60W、氩气压强为2.0Pa、蓝宝石衬底为室温条件下的溅射工艺获得了(0002)单一取向、晶界清晰、晶粒尺寸均一的ZnO薄膜,以它为缓冲层获得的GaN厚膜XRD的(0002)衍射峰半高宽(FWHM)为265secarc,室温PL谱未见明显黄光发射带。     

Visible photoluminescence of zinc oxide films electrochemically deposited on silicon substrates

Continuous crystalline films of zinc oxide (ZnO) with thicknesses of 6–10 μm were obtained by electrochemical deposition from aqueous zinc nitrate solutions on silicon substrates with a buffer nickel layer. X-ray diffraction measurements showed that the polycrystalline films possess a hexagonal crystal lattice with predominant (0002) orientation. The obtained ZnO films exhibit strong photoluminescence in the visible spectral range at room temperature.     

Influence of pyrolytic temperature on the properties of ZnO films optimized for H2 sensing application

In this work, we report the influence of pyrolytic temperature on the properties of ZnO films deposited by a novel spray pyrolysis deposition route. XRD results revealed an improvement in crystal quality of the films with increase in growth temperature. The optical measurements of the films show a maximum transmittance of ~85 % and the band gap of ~3.5 eV. Photoluminescence spectra revealed that the UV emission peaks at 385 nm is improved with increase in growth temperature upto 300 °C, which corresponds to the increase of optical quality and decrease of Zn interstitial defect in the films. Gold ohmic contacts were evaporated on the optimized ZnO film prepared at the substrate temperature of 300 °C, and response of the film to different concentrations of hydrogen (150–500 ppm) at room temperature was investigated. The ZnO sensor showed significant sensitivity to hydrogen for concentration as low as 150 ppm at room temperature, and the sensor response was observed to increase with increase in hydrogen concentration. The increased sensitivity of the film was attributed to the large roughness of the film revealed from AFM analysis. The results ensure the application of our novel sensor, to detect H₂ at low concentration and at room temperature.     

ZnO thin films deposited by a CVT technique in closed ampoules

ZnO thin films were prepared on quartz glass, Si (100), and sapphire (001) substrates by a chemical vapour transport (CVT) technique. During the growing processes, the source and substrate temperatures were maintained at 1000 °C and 600 °C, respectively. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) measurements showed that the crystalline qualities of ZnO thin films were sensitively dependent on substrates. ZnO thin film deposited on sapphire substrate exhibited the best morphology with the largest crystallite size of more than 20 μm. Meanwhile, the XRD patterns showed that ZnO thin film deposited on sapphire substrate was strongly c-axis preferred-oriented with high crystalline quality. The optical properties of ZnO thin films were investigated by photoluminescence (PL) spectroscopy at room temperature (RT). The results suggested that the optical properties of ZnO thin films were highly influenced by their crystalline qualities and surface morphologies.     

Dielectric studies on hybridised PVDF–ZnO nanocomposites

Nanocomposites of polyvinylidene fluoride (PVDF) and nano-ZnO were prepared using the solution casting method for different concentrations of nano-ZnO and were characterised by X-ray diffraction and atomic force microscopy. Optical properties of these nanocomposites were determined by using UV-Vis absorption spectroscopy and Fourier transform infrared analysis. The variation of dielectric properties such as dielectric constant, dielectric loss and electric modulus of the hybrid films based on the content of ZnO studied for various microwave frequencies at room temperature showed that the dielectric constant of PVDF–ZnO hybrid films increased with increasing ZnO content at room temperature.     

High optical quality ZnO films grown on graphite substrate for transferable optoelectronics devices by ultrasonic spray pyrolysis

ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method. The effects of substrate temperature and film thickness on the crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systemically. Results illustrated that dense ZnO films with hexagonal wurtzite structure were uniformly distributed on the substrate. Strong near-band edge ultraviolet (UV) emission peaks were observed in room temperature photoluminescence (PL) spectra for the samples prepared under optimized parameters, yet the usually observed defect related deep level emissions were nearly undetectable, indicating high optical quality ZnO films could be achieved via this easy process under optimal conditions. The successful growth of polycrystalline ZnO films on graphite offers the significant opportunity to be readily transferred onto any rigid or flexible foreign substrates, since the graphite substrates consist of weakly bonded layer structure.     

不同衬底上低温生长的ZnO晶体薄膜的结构及光学性质比较

采用电子束反应蒸发方法,在单晶Si(001)及玻璃衬底上低温外延生长了沿c轴高度取向的单晶ZnO薄膜,并对沉积的ZnO晶体薄膜的结构和光学性质进行了分析比较。通过对ZnO薄膜的X射线衍射(XRD)分析及光致荧光激发谱(PLE)测量,研究了衬底材料结构特性、生长温度及反应气氛中充O     

Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy

We investigated the structural properties of Zn-polar ZnO films with low temperature (LT) ZnO and MgO buffer layers grown by plasma-assisted molecular beam epitaxy on (0001) c-Al₂O₃ substrates using X-ray diffraction and transmission electron microscopy (TEM). The effects of MgO buffer layer thickness and LT ZnO buffer layer thickness were also examined. The optimum thicknesses for better crystal quality were 8 and 40 nm. One-pair and two-pair LT ZnO/MgO buffer layers were employed, and the changes in the structural properties of the high-temperature (HT) ZnO films using such buffer layers were studied. Contrary to the general tendency of c-ZnO films, the HT ZnO films on the LT ZnO/MgO buffer layers showed higher full width at half maximum (FWHM) values for X-ray rocking curves (XRCs) with (0002) reflection than those with (101?1) reflection. Compared with the one-pair LT ZnO/MgO buffer layers, the FWHM values of (0002) XRCs markedly decreased, whereas those of (101?1) XRCs slightly increased due to the insertion of one more pair of LT ZnO/MgO buffer layers into the previous film with one-pair LT ZnO/MgO buffer layers. The cross-sectional TEM observations with the two-beam condition confirmed that the screw dislocation was the dominant threading dislocation type—a finding that agreed well with the XRC results. On the basis of the plan-view TEM observations, the densities of the total threading dislocations for the HT ZnO films with the one- and two-pair LT ZnO/MgO buffer layers were determined as 2.3 × 10⁹ cm^− 2 and 1.6 × 10⁹ cm^− 2, respectively. The results imply that the crystal quality of Zn-polar ZnO films can be improved by two-pair LT ZnO/MgO buffer layers, and types of threading dislocations can be modified by adjusting the buffer system.     

薄膜厚度对Au/ZnO/n+-Si薄膜压敏电阻器阈值电压的影响

本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜...     

Comparison of ZnO Films Grown on before- and after-vapor Transport Equilibration （VTE） LiAlO2 Substrates by Pulsed Laser Deposition （PLD）

About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition （PLD）. It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.