Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate

380 nm ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS) with silicon dioxide (SiO2) nano pattern to improve the light output efficiency. Wet etched self assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. Three different diameter of ITO such as 200, 250 and 300 nm were used for SiO2 nano pattern fabrication. PNS is obtained by n-GaN regrowth on SiO2 nano patterns and UV LEDs were grown on PNS template by MOCVD. Enhanced light output intensity was observed by employing SiO2 nano patterns on n-GaN. Among different PNS UV LEDs, LED grown on PNS with 300 nm ITO diameter showed enhancement in light output intensity by 2.1 times compared to the reference LED without PNS.     

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ~ 200 A cm(-2).     

Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

We propose a simple technique to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs) by using nanoscale ITO/ZnO layer-texturing. The surface texturing of the ITO and ZnO layers was performed using a wet chemical etching and a spin-coating process, respectively. It has been found that the light extraction efficiency of the ITO-/ZnO-textured LED was 34.5% greater than that of a conventional LED with a planar ITO, at 20 mA of current injection. A high level of multiple light scattering at the textured surface promoted a high-efficiency in the InGaN/GaN LEDs. In addition, the individual performance of the ITO and ZnO texturing on the LED surface was also investigated. The lowered forward voltage of the ITO/ZnO layer-textured LED indicated this could be a damage-free approach for device fabrication.     

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy

For almost 2 decades, p-doping of GaN was not feasible. Since the ionisation energy of any acceptor species is >200 meV, the hole concentration obtained by p-doping is only one hundredth of the acceptor impurity concentration. Mg has been so far the most typical dopant used for p-type GaN. In metal organics vapour phase epitaxy (MOVPE), the precursor was the bismethylcyclopentadienyl Mg, (MeCp)₂Mg. However, two severe drawbacks must be overcome. The Mg precursor and ammonia react in the vapour phase to give solid particles. In addition, H is incorporated during the growth process, therefore, a post growth annealing is required. The Mg doped GaN samples studied were grown by MOVPE on (0001) oriented sapphire substrates. With proper design of the growth chamber and thermal annealing, doping densities up to 2×10¹⁸ cm⁻³ have been reached. Photoluminescence (PL) and photocapacitance data reveal that in addition to the shallow acceptors, deep states are most likely related to Mg complexes. n-Doping is straightforward. Si is easily introduced via silane and allows a free carrier concentration up to 10¹⁹ cm⁻³ to be reached. Henceforth p–n junctions and light emitting diodes were achievable.     

Robust reliability for light emitting diodes using degradation measurements

Taguchi's robust design provides an important paradigm for producing robust products. There are many successful applications of this paradigm, but few have dealt with reliability, i.e. when the quality characteristic is lifetime. In this paper, an actual experiment is presented which was performed to achieve robust reliability of light emitting diodes. Three major factors chosen from many potentially important manufacturing factors and one noise factor were investigated. For light emitting diodes, failure occurs when their luminosity or light intensity fall below a specified level. An interesting feature of this experiment is the periodic monitoring of the luminosity. The paper shows how the luminosity's degradation over time provides a practical way to achieve robust reliability of light emitting diodes which are already highly reliable.     

Multilayer light emitting diodes using a PPV based copolymer

We have investigated the electrical and optical properties of poly((2,5-(dimethoxy) p-phenylene vinylene)-p-phenylene vinylene) (PDMeOPV/PPV) copolymer used as an emitting layer in light emitting diodes. With p-phenylene vinylene (PPV) used as a hole transport layer and polyphenylquinoxaline (PPQ) as an electron transport layer, the emission intensity of the devices has substantially increased without alteration of the transport property. The different conduction mechanisms in the diodes were examined and discussed in terms of the energy band diagrams of the polymer layers. A balance of the injected charge carriers confined in the copolymer could explain the enhancement of the performance of the multilayer diodes.     

Si衬底GaN基LED理想因子的研究

首次报道Si衬底GaN LED的理想因子.通过GaN LEDI-V曲线与其外延膜结晶性能相比较,发现理想因子的大小与X射线双晶衍射摇摆曲线(102)面半峰宽有着对应关系:室温时Si衬底GaN LED的理想因子为6.6,对应着半峰宽707arcsec;理想因子为4.5时,对应半峰宽530arcsec.蓝宝石衬底GaN LED理想因子为3.0,其对应半峰宽401arcsec.硅衬底GaN LED理想因子大的原因可以归结为高缺陷密度所致,高缺陷密度使电流隧穿更容易进行.     

Electroluminescence of organolanthanide based organic light emitting diodes

Recent advances in organolanthanide based organic light emitting diodes have lead to the demonstration of infra-red emitting devices. A silicon based organic light emitting diode exhibiting 1.53 μm electroluminescence at room temperature has also recently been reported. Furthermore, recent work has led to a clearer understanding of the quenching mechanisms in these organolanthanide based devices and suggests that the efficiencies obtained to date can be greatly improved.     

Light extraction from organic light emitting diodes using chemically etched glass substrates

We have manufactured highly efficient OLED devices fabricated on chemically etched glass substrates. The external quantum efficiency of the OLED devices with the etched glass substrates was increased by 5-27% in comparison with the reference flat glass substrate. Surface morphology, such as indented patterns, significantly affected the external luminance efficiency. A clean surface and the presence of smooth bent edges of indented patterns were found to be important for improving the external luminous efficacy.     

The optical linewidth of InGaN light emitting diodes

A comparative study of the optical linewidths of high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken using photo- and electroluminescence. Optical linewidths show a linear increase with increasing indium concentration in both cases. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductors is proposed as a novel line-broadening mechanism.     

GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts

GaN-based indium-tin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n⁺-short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very rough. It was also found that 20 mA forward voltages measured from ITO LEDs with p-GaN, n⁺-SPS and nanostructured silicon contact layers were 6.01, 3.25 and 3.26 V, respectively. Compared with ITO LED with n⁺-SPS, it was found that output power of ITO LED with nanostructured silicon contact was 17% larger. Furthermore, it was found that ITO LED with nanostructured silicon contact was more reliable.     

Blue fluorescent organic light emitting diodes with multilayered graphene anode

As an innovative anode for organic light emitting devices (OLEDs), we have investigated graphene films. Graphene has importance due to its huge potential in flexible OLED applications. In this work, graphene films have been catalytically grown and transferred to the glass substrate for OLED fabrications. We have successfully fabricated 2 mm × 2 mm device area blue fluorescent OLEDs with graphene anodes which showed 2.1% of external quantum efficiency at 1000 cd/m². This is the highest value reported among fluorescent OLEDs using graphene anodes. Oxygen plasma treatment on graphene has been found to improve hole injections in low voltage regime, which has been interpreted as oxygen plasma induced work function modification. However, plasma treatment also increases the sheet resistance of graphene, limiting the maximum luminance. In summary, our works demonstrate the practical possibility of graphene as an anode material for OLEDs and suggest a processing route which can be applied to various graphene related devices.     

Top emitting organic light emitting diodes with opaque metal grid electrodes by transfer technique

The opaque metal grid electrodes are introduced to fabricate top emitting organic light emitting diodes (TOLEDs) through metal transfer technique. To transmit the lights, micrometer-sized patterns of aluminum (Al) were utilized as top cathodes in OLEDs and Al mirrors were also deposited at the other side of transparent substrates to reflect the lights emitted at the bottom sides. Although the only 50% of brightness compared to bottom emitting OLEDs (BOLEDs) could be achieved theoretically, the actual devices showed more than 70% based on the compressive effects during the metal transfer process. Since the resolution of human eyes recognizes these micrometer-sized grid structures as one pixel, TOLEDs can be simply fabricated without significant loss of efficiency.     

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron–hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.     

Fabrication and characterization of white polymer light emitting diodes using PFO:MDMO-PPV

White polymer light emitting diodes (WPLEDs) with a glass/ITO/PEDOT:PSS/PFO:MDMO-PPV/ TPBI/LIF/Al structure were fabricated in order to investigate the optimum doping concentration of the emission materials. PEDOT:PSS was introduced as the hole transport material. The PFO and MDMO-PPV were used as the light emitting host and the guest materials, respectively. The PFO:MDMO-PPV mixed solution was spin-coated onto the PEDOT:PSS/ITO substrate. TPBI, LiF and Al were deposited by thermal evaporation as the hole blocking, electron injection, and cathode materials, respectively. As a result, the current density and luminance of the WPLED with the 20.0 wt% MDMO-PPV concentration in the PFO host material were found to be about 365 mA/cm2 and 4315 cd/m2, respectively. The maximum external quantum efficiency (EQE) of the same sample was found to be 11.26%, which may be ascribed to the efficient energy transfer from the PFO host to the MDMO-PPV guest material.     

Tuning the colour of white polymer light emitting diodes

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the physical background of colour tuning. Furthermore, the material design has led to polymers which are more stable during electrical stress, so that colour shift during lifetime can be excluded for white polymer LEDs.     

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth

We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 microm2) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 microm. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.     

Highly efficient white phosphorescent organic light emitting diodes using a mixed host structure in deep blue emitting layer

Highly efficient phosphorescent white organic light-emitting diodes (PHWOLEDs) were developed using a deep blue phosphorescent emitter doped into a mixed host of high triplet energy host materials. The deep blue emitting layer was combined with a red:green emitting layer to fabricate PHWOLEDs. A high quantum efficiency of 19.5% with a color coordinate of (0.29,0.38) and 19.8% with a color coordinate of (0.39,0.46) were achieved in the PHWOLEDs using the mixed host emitting layer doped with a deep blue phosphorescent dopant. In addition, a low optimum doping concentration below 5% in red, green and blue dopants was realized in the PHWOLEDs.     

Improved light extraction from large-area vertical light-emitting diodes with deep hole-patterns using nanosphere lithography

The authors report on an improved light extraction method from large-area vertical light emitting diodes (VLEDs) with deep hole-patterns fabricated using nanosphere lithography. In order to produce the ordered deep-hole patterns on the n-type GaN surface, a 150 nm thick Ni dot mask formed via a lift-off process of the Ni coated onto a 500 nm diameter polystylene bead array was employed to enable deep etching. Three VLEDs-one as a reference with no patterns, and two with periodic 360 nm diameter hole patterns, one with 1.0 microm and the other with 1.5 microm depths on the n-type GaN surface, were prepared for comparison. The light output power measured for the VLEDs with the hole-patterns increased by 4.13 and 4.86 times, respectively, as compared to the reference VLED. These enhancements are attributed to the multiple scatterings of the light from the sidewall of the hole-patterns and to the increased surface area to which the light can approach. The higher light output power obtained for the VLEDs with the deep hole patterns might be due to a photon reabsorption reduction within the n-GaN layer.