p-Type ZnO nanowire arrays

Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) x 10(18) cm(-3) and a field-effect mobility of 10-17 cm2 V(-2) s(-1). Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices.     

Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates

Lateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [211] in parallel to the Si +/-[110] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ doping, the resistivity of the In2O3 NWs has been tuned. The lateral self-aligned In2O3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.     

Hole-effective masses in the transport calculation of Si nanowire pMOSFETs

The full-quantum, self-consistent simulation of p-type silicon nanowire field effect transistors based on the k * p method is performed and their device characteristics are examined in the light of the hole-effective masses. An attempt is made in this study to assess the role of the hole-effective masses by devising simple, single-band parabolic effective mass (PEM) Hamiltonians and comparing the transport characteristics with the ones from the k * p method. It is found that the PEM Hamiltonian with isotropic effective masses fails to correctly produce both the scaling behavior of the subthreshold currents and the behavior of the on-currents with respect to the silicon orientation. A modified PEM model with light-hole effective mass in the transport direction and quantization effective mass in the perpendicular direction greatly improve the subthreshold behavior for all the silicon orientations, which shows that the top-most light-hole subband dominantly determines the subthreshold behavior. The modified PEM model however overestimates the on-currents, indicating the limitation of the model.     

A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor

In this paper we have used quantum mechanical transport approach to analyse electrical characteristics of silicon nanowire transistor and have compared the results with those obtained using semi classical Boltzmann transport model. The analyse employs a three dimensional simulation of Silicon nanowire transistor based on self consistent solution of Poisson, Schrodinger equations. Quantum mechanical transport model uses the non equilibrium Green's function (NEGF) while the semi classic model doesn't account for tunneling current. The results have shown that Quantum tunneling is significant in inversion condition especially when the channel length is short. For the long devices quantum modeling and semi classical model produce the same result, and tunneling is negligible.     

Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors

We present a simulation study of silicon nanowire transistors, based on an in-house code providing the self-consistent solution of Poisson, Schrodinger, and continuity equations on a generic three-dimensional domain. The main assumption, based on the very small nanowire cross section considered, is that an adiabatic approximation can be applied to the Schrodinger equation, so that transport occurs along one-dimensional sub- bands. Different subband transport models are considered, such as ballistic transport, either including quantum tunneling or not, and drift-diffusion. We show that nanowire transistors exhibit good control of short channel effects, and that barrier tunneling is significant in the strong inversion regime even for longer devices, while it is significant in subthreshold only for the shortest channel lengths. Finally, we show that a subband-based transport model allows to reach a very good trade off between physical accuracy of the simulation and computing time.     

Direct synthesis of high-density lead sulfide nanowires on metal thin films towards efficient infrared light conversion

We report chemical-vapor-deposition (CVD) synthesis of high-density lead sulfide (PbS) nanowire arrays and nano pine trees directly on Ti thin films, and the fabrication of photovoltaic devices based upon the PbS nanowires. The as-grown nanowire arrays are largely vertically aligned to the substrates and are uniformly distributed over a relatively large area. Field effect transistors incorporating single PbS nanowires show p-type conduction and high mobilities. These catalytic metal thin films also serve as photocarrier collection electrodes and greatly facilitate device integration. For the first time, we have fabricated Schottky junction photovoltaic devices incorporating PbS nanowires, which demonstrate the capability of converting near-infrared light to electricity. The PbS nanowire devices are stable in air and their external quantum efficiency shows no significant decrease over a period of 3?months in air. We have also compared the photocurrent direction and quantum efficiencies of photovoltaic devices made with different metal electrodes, and the results are explained by band bending at the Schottky junction. Our research shows that PbS nanowires are promising building blocks for collecting near-infrared solar energy.     

Cover Picture: Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence (Adv. Mater. 18/2007)

On p. 2603, Tom Picraux and co‐workers report on the use of plasma excitation to strongly enhance the nucleation of Si nanowires by the vapor–liquid–solid growth method. This control allows the preferential formation of very small diameter [110] oriented nanowires, as well as significant enhancements in low temperature nanowire growth.     

Performance analysis of a Ge/Si core/shell nanowire field-effect transistor

We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3d5s* tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operates between 60 and 85% of the ballistic limit. For this approximately 15 nm diameter Ge nanowire, we also find that 14-18 modes are occupied at room temperature under ON-current conditions with ION/IOFF = 100. To observe true one-dimensional transport in a 110 Ge nanowire transistor, the nanowire diameter would have to be less than about 5 nm. The methodology described here should prove useful for analyzing and comparing on a common basis nanowire transistors of various materials and structures.     

Realizing lateral wrap-gated nanowire FETs: controlling gate length with chemistry rather than lithography

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.     

Electrodeposited bismuth telluride nanowire arrays with uniform growth fronts

Bismuth telluride (Bi2Te3) nanowires were deposited into porous alumina templates with 35 nm diameter pores by a pulsed-potential electrodeposition method. For growth at temperatures between 1 and 4 degrees C, the nanowires filled 93% of the pores of the template, and the growth fronts were uniform with nanowire lengths of approximately 62-68 microm. There are over ten billion nanowires per square centimeter with aspect ratios approaching 2000:1. Samples were characterized by scanning and transmission electron microscopy, X-ray diffraction, and electron microprobe analysis. The crystalline nanowire arrays are highly oriented in the [110] direction, which is optimal for thermoelectric applications.     

Chemical control of semiconductor nanowire kinking and superstructure

We show that methylgermane (GeH(3)CH(3)) can induce a transition from 111 to 110 oriented growth during the vapor-liquid-solid synthesis of Ge nanowires. This hydride-based chemistry is subsequently leveraged to rationally fabricate kinking superstructures based on combinations of 111 and 110 segments. The addition of GeH(3)CH(3) also eliminates sidewall tapering and enables Ge nanowire growth at temperatures exceeding 475 °C, which greatly expands the process window and opens new avenues to create Si/Ge heterostructures.     

Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: a demonstration of epitaxial growth strategy

We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (～1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.     

Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions

Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which extends the device function to a selective multiwavelength photodetector and shows the function of an optical logical AND gate.     

Influence of spinel substrate and over-layer for enhanced SAW and AO properties with KNbO3 thin film

Surface acoustic wave (SAW) propagation characteristics have been studied using modeling calculations for a potassium niobate (KNbO/sub 3/) thin film-layered structure with [001] and [110] orientation on a single crystal spinel (MgAl/sub 2/O/sub 4/) substrate, and a spinel buffer layer on silicon. Variation in the electromechanical coupling and acoustic attenuation has been compared. A significantly high value of coupling factor (k/sub max//sup 2/=23%) is obtained for the [001]KNbO/sub 3//spinel structure by introducing an optimum thickness of spinel over-layer for potential wide bandwidth SAW device applications. The dispersion characteristics with the [110] KNbO/sub 3/ orientation indicate an initial peak in the coupling coefficient value (k/sub max//sup 2/=8.8%) at a relatively low KNbO/sub 3/ film thickness that appears attractive for fabricating devices with thinner films. The KNbO/sub 3/ film with [001] orientation is found attractive for efficient acousto-optic (AO) device application with the formation of a symmetric waveguide structure (spinel(0.5 /spl mu/m)/KNbO/sub 3/(1.0 /spl mu/m)/spinel). A high value of k/sup 2/=23.5% with 50% diffraction efficiency has been obtained for the spinel(0.5 /spl mu/m)/KNbO/sub 3/(1.0 /spl mu/m)/spinel structure at 1 GHz SAW frequency and 633 nm optical wavelength at a very low input drive power of 15.4 mW.     

Vertical nanowire array-based light emitting diodes

Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.     

Vertically standing Ge nanowires on GaAs(110) substrates

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380?°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.     

High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod–Coil Materials as a Floating Gate

A novel approach for using conjugated rod–coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between “Photo-On” and “Electrical-Off” bistable states over 10⁵, and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.     

Vertically aligned single crystal TiO2 nanowire arrays grown directly on transparent conducting oxide coated glass: synthesis details and applications

Single-crystal one-dimensional (1D) semiconductor architectures are important in materials-based applications requiring a large surface area, morphological control, and superior charge transport. Titania has widespread utility in applications including photocatalysis, photochromism, photovoltaics, and gas sensors. While considerable efforts have focused on the preparation of 1D TiO2, no methods have been available to grow crystalline nanowire arrays directly onto transparent conducting oxide (TCO) substrates, greatly limiting the performance of TiO2 photoelectrochemical devices. Herein, we present a straightforward low temperature method to prepare single crystal rutile TiO2 nanowire arrays up to 5 microm long on TCO glass via a non-polar solvent/hydrophilic substrate interfacial reaction under mild hydrothermal conditions. The as-prepared densely packed nanowires grow vertically oriented from the TCO glass substrate along the (110) crystal plane with a preferred (001) orientation. In a dye sensitized solar cell, N719 dye, using TiO2 nanowire arrays 2-3 microm long we achieve an AM 1.5 photoconversion efficiency of 5.02%.     

Effect of loading direction and initial imperfections on the development of dynamic shear bands in a FCC single crystal

Summary We study plane strain dynamic thermomechanical deformations of a FCC single crystal deformed at an average strain-rate of 1 000 s^–1 along the crystallographic direction [380] with the plane of deformation parallel to the plane (001) of the single crystal. Four different situations are studied; in the first two there is no initial imperfection assumed in the crystal and it is either compressed or pulled, and in the other two the crystal is compressed but either the initial temperature is nonuniform or a small region around the centroid of the cross-section is misoriented relative to the rest of the cross-section. In each case, all twelve slip systems are assumed to be potentially active, and the crystal material is presumed to exhibit strain hardening, strain-rate hardening, and thermal softening. These effects are modelled by using a simple combined isotropic-kinematic hardening expression for the critical resolved shear stress, proposed by Weng, and modified to incorporate the effect of thermal softening of the material. It is found that each one of the slip systems , and contributes essentially equally to the plastic deformations of the crystal and these slip systems become active soon after the load is applied. The same holds for the slip systems , and except that they are active in a region different from that of the previous one. The remaining four slip systems either stay inactive throughout the deformation process, or become active at late stages of the deformation.     

Statistical analysis of the breaking processes of Ni nanowires

We have performed a massive statistical analysis on the breaking behaviour of Ni nanowires using molecular dynamic simulations. Three stretching directions, five initial nanowire sizes and two temperatures have been studied. We have constructed minimum cross-section histograms and analysed for the first time the role played by monomers and dimers. The shape of such histograms and the absolute number of monomers and dimers strongly depend on the stretching direction and the initial size of the nanowire. In particular, the statistical behaviour of the breakage final stages of narrow nanowires strongly differs from the behaviour obtained for large nanowires. We have analysed the structure around monomers and dimers. Their most probable local configurations differ from those usually appearing in static electron transport calculations. Their non-local environments show disordered regions along the nanowire if the stretching direction is [100] or [110]. Additionally, we have found that, at room temperature, [100] and [110] stretching directions favour the appearance of non-crystalline staggered pentagonal structures. These pentagonal Ni nanowires are reported in this work for the first time. This set of results suggests that experimental Ni conducting histograms could show a strong dependence on the orientation and temperature.