Phase, microstructure and microwave dielectric properties of Zr-doped SrLa4Ti5?xZrxO17

The effect of Zr⁺⁴ substitution for Ti⁺⁴ on the phase, microstructure and microwave dielectric properties of compositions in the SrLa₄Ti_5−xZr_xO₁₇ (0 ≤ x ≤ 0.1) series was investigated. All the compositions formed single phase ceramics within the detection limit of in-house X-ray diffractometer when sintered in the temperature range 1,450–1,580 °C for 4 h in air. The substitution of Zr⁺⁴ for Ti⁺⁴ enabled processing of highly dense ceramics with a decrease in temperature coefficient of resonant frequency (τ_f) from ~117 to 70 ppm/°C, dielectric constant (ε_r) from 60.8 to 57.3, with no significant effect on the quality factor. In the present study, optimum properties i.e. ε_r ~ 57.3, τ_f ~ 70 ppm/°C and quality factor (Q _u  × f _o ) ~ 9,841 GHz, were achieved for SrLa₄Ti_4.9Zr_0.1O₁₇. The trend of the results demonstrates that further studies with increased Zr⁺⁴ content are required to achieve ultra low loss SrLa₄Ti_5−xZr_xO₁₇ ceramics.     

Synthesis,microstructure and microwave dielectric properties of Ca<Subscript>4-x</Subscript>Mg<Subscript>x</Subscript>La<Subscript>2</Subscript>Ti<Subscript>5</Subscript>O<Subscript>17</Subscript> ceramics

Ca_4-xMg_xLa₂Ti₅O₁₇ ceramics were prepared by a solid state ceramic route for x = 0, 0.5, 1, 2, 3 and 4. The structure and microstructure of the ceramics were investigated using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. X-ray diffraction results show that the Ca_4-x Mg _x La₂Ti₅O₁₇ adopts an orthorhombic crystal structure with no secondary phase observed for x from 0 to 0.5. Secondary phase, MgTiO₃ occurs with further increasing doping level (1 ≤ x ≤ 3). When x = 4, mixture phases La_0.66TiO_2.993, MgTiO₃ and a trace of unknown phase coexist. Ca₄La₂Ti₅O₁₇ ceramic exhibits a relative permittivity (ε_r) ~ 65, quality factor (Q × f) ~13,338 GHz (at ~4.75 GHz), and temperature coefficient of resonant frequency (τ _f ) ~ 165 ppm/°C. The sintering temperature was distinctly reduced from 1,580 °C for x = 0 to 1,350 °C for x = 4. With increasing Mg content, ε_r and τ_f obviously decrease, while Q × f value initially decreases and then increases. The ceramic for x = 2 shows ε_r ~ 50, Q × f ~ 9,451 and τ _f  ~ 62.5 ppm/°C. By the complete replacement of Ca with Mg, Mg₄La₂Ti₅O₁₇ ceramic sintered at 1,350 °C for 4 h combines a high dielectric permittivity (ε _r  = 31), high quality factor (Q × f ~ 15,021) and near-zero temperature coefficient of resonant frequency (τ _f  ~ 4.0 ppm/°C). The materials are suitable for microwave applications.     

Properties of neodymium-doped Ca<Subscript>0.15</Subscript>Sr<Subscript>1.85</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>18</Subscript> ferroelectric ceramics

Bismuth-layered compound Ca_0.15Sr_1.85Bi_4−xNd_xTi₅O₁₈ (CSBNT, x = 0–0.25) ferroelectric ceramics samples were prepared by solid-state reaction method. The effects of Nd³⁺ doping on their ferroelectric and dielectric properties were investigated. The remnant polarization Pr of CSBNT ceramics increases at beginning then decreases with increasing of Nd³⁺ doping level, and a maximum Pr value of 9.6 μC/cm² at x = 0.05 was detected with a coercive field Ec = 80.2 kV/cm. Nd³⁺ dopant not only decreases the Curie temperature linearly, but also the dielectric constant (ε_r) and dielectric loss tangent (tan δ). The magnitudes of ε_r and tan δ at the frequency of 100 kHz are estimated to be 164 and 0.0083 at room temperature, respectively.     

Microwave dielectric properties and its compatibility with silver electrode of LiNb<Subscript>0.6</Subscript>Ti<Subscript>0.5</Subscript>O<Subscript>3</Subscript> with B<Subscript>2</Subscript>O<Subscript>3</Subscript> and CuO additions

The influences of B₂O₃ and CuO (BCu, B₂O₃: CuO = 1:1) additions on the sintering behavior and microwave dielectric properties of LiNb_0.6Ti_0.5O₃ (LNT) ceramics were investigated. LNT ceramics were prepared with conventional solid-state method and sintered at temperatures about 1,100 °C. The sintering temperature of LNT ceramics with BCu addition could be effectively reduced to 900 °C due to the liquid phase effects resulting from the additives. The addition of BCu does not induce much degradation in the microwave dielectric properties. Typically, the excellent microwave dielectric properties of ε_r = 66, Q × f = 6,210 GHz, and τ _f  = 25 ppm/^oC were obtained for the 2 wt% BCu-doped sample sintered at 900 °C. Chemical compatibility of silver electrodes and low-fired samples has also been investigated.     

Phase,microstructural characterization and dielectric properties of Ca-substituted Sr<Subscript>5</Subscript>Nb<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics

The effect of Ca substitution for Sr on the phase, microstructure and microwave dielectric properties of the Sr_5−x Ca _x Nb₄TiO₁₇ composition series was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), an LCR meter, and vector network analyzer. Below 1450 °C, Sr_5−x Ca _x Nb₄TiO₁₇ (x = 1, 2, 3, or 4) compositions formed single-phase Sr₄CaNb₄TiO₁₇, Sr₃Ca₂Nb₄TiO₁₇, Sr₂Ca₃Nb₄TiO₁₇, and SrCa₄Nb₄TiO₁₇ ceramics, respectively. At x = 0 and 5, Sr₅Nb₄TiO₁₇ and Ca₅Nb₄TiO₁₇ formed, but along with Sr₂Nb₂O₇ (at x = 0) and CaNbO₃ and CaNb₂O₆ (at x = 5) secondary phases. Above 1450 °C, all the compositions formed two-phase ceramics. At low frequencies, a phase transition was observed in the composition Sr₅Nb₄TiO₁₇. The substitution of Ca for Sr enabled processing of highly dense Sr₂Ca₃Nb₄TiO₁₇, with ε_r ~ 53.4, τ_f ~ −6.5 ppm/°C and Q _u  × f _o  ~ 1166 GHz. Further investigations are required to improve the quality factor of these ceramics for possible microwave applications.     

Effects of Nd-substitution on microstructures and dielectric characteristics of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics

Ca_1−3x/2Nd _x Cu₃Ti₄O₁₂ (x = 0, 0.1, 0.2) ceramics were prepared by a solid state reaction process, and single-phased structures were obtained for all the compositions. The dielectric characteristics of pure and Nd-substituted CaCu₃Ti₄O₁₂ ceramics were investigated together with the microstructures. The mixed-valent structures of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ in the present ceramics were confirmed by X-ray photoelectron analysis. The dielectric relaxation in the low temperature range was examined in detail and the variation of dielectric constant and dielectric loss was attributed to the modification mixed-valent structures.     

Low-temperature sintering and microwave dielectric properties of TiO<Subscript>2</Subscript>-based LTCC materials

Temperature stable high-K LTCC material was prepared. The influence of fabrication process on the crystalline phases, microstructures and microwave dielectric properties of TiO₂-Bi₂O₃-CuO ceramics were investigated. The crystalline phases and microstructures of TiO₂-Bi₂O₃-CuO ceramics were investigated by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. It was found that rutile TiO₂ phase and Bi₂Ti₄O₁₁ phase co-existed in the TiO₂-Bi₂O₃-CuO ceramics. Separate TiO₂ grains and Bi₂Ti₄O₁₁ grains distributed uniformly in the ceramic matrix. The composition 0.92TiO₂-0.08Bi₂Ti₄O₁₁ with 2 wt% CuO addition that was sintered at 900 °C for 2 h showed high dielectric constant (ε_r ~ 81), high quality factor (Q × f ~ 3,500 GHz) and near zero temperature coefficient of resonant frequency (τ_f ~ −5.1 ppm/°C), meanwhile the compatibility test showed that it could co-fire with silver electrode. The processing-microstructure-property interrelationship was also studied.     

Influence of Zr doping on the dielectric properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics

Pure and Zr-substituted CaCu₃(Ti_1−x Zr _x )₄O₁₂ (x = 0, 0.01, 0.02, 0.03) ceramics were prepared by the Pechini method. X-ray powder diffraction analysis indicated the formation of single-phase compound, and all the diffraction peaks were completely indexed by the body-centered cubic perovskite-related structure. The effects of Zr⁴⁺ ion substituting partially Ti⁴⁺ ion on the dielectric properties were investigated in frequency range between 100 Hz and 1 GHz. The low frequency (f ≤ 10⁵ Hz) dielectric constant decreases with Zr substitution and the high frequency (f ≥ 10⁷ Hz) dielectric constant is unchanged. Interestingly, a low-frequency relaxation was observed at room temperature through Zr substitution. The observed dielectric properties in Zr-substituted samples were discussed using the internal barrier layer capacitor model. A corresponding equivalent circuit was adopted to explain the dielectric dispersion. The characteristic frequency of low-frequency relaxation rises due to the decrease of the resistivity of grain boundary with Zr substitution, which is likely responsible for the large low-frequency response at room temperature.     

Low-firing Li<Subscript>2</Subscript>ZnTi<Subscript>3</Subscript>O<Subscript>8</Subscript> microwave dielectric ceramics with BaCu(B<Subscript>2</Subscript>O<Subscript>5</Subscript>) additive

Phase purity, microstructure, sinterability and microwave dielectric properties of BaCu(B₂O₅)-added Li₂ZnTi₃O₈ ceramics and their cofireability with Ag electrode were investigated. A small amount of BaCu (B₂O₅) can effectively reduce the sintering temperature from 1075°C to 925°C, and it does not induce much degradation of the microwave dielectric properties. Microwave dielectric properties of ε _r = 23·1, Q × f = 22,732 GHz and τ _f = − 17·6 ppm/°C were obtained for Li₂ZnTi₃O₈ ceramic with 1·5 wt% BaCu(B₂O₅) sintered at 925°C for 4 h. The Li₂ZnTi₃O₈ +BCB ceramics can be compatible with Ag electrode, which makes it a promising microwave dielectric material for low-temperature co-fired ceramic technology application.     

Luminescence properties and electronic structure of Sm<Superscript>3+</Superscript>-doped YAl<Subscript>3</Subscript>B<Subscript>4</Subscript>O<Subscript>12</Subscript>

The luminescence properties of Sm³⁺ ions in YAl₃B₄O₁₂ were studied upon synchrotron excitation in the 3.8–11 eV region. In addition to the 4f → 4f excitation bands, the excitation spectra of the Sm³⁺ emission contain broad bands at 6.1 and ~7.0 eV. These bands are attributed to charge transfer transition in Sm³⁺–O²⁻ complexes and 4f → 5d transition of Sm³⁺ ions, respectively. The optical absorption edge of YAl₃B₄O₁₂ was determined at 7.3 eV. A comparison with the results of electronic structure calculations on YAl₃B₄O₁₂ is also made.     

Dielectric properties of B<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Sm(Co<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramics at microwave frequency

The microwave dielectric properties and the microstructures of Sm(Co_1/2Ti_1/2)O₃ ceramics with B₂O₃ additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B₂O₃ (up to 0.5 wt%) can effectively promote the densification of Sm(Co_1/2Ti_1/2)O₃ ceramics with low sintering temperature. It is found that Sm(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B₂O₃ addition. At 1,290 °C, Sm(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% B₂O₃ addition possess a dielectric constant (ε _r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of −11.4 ppm/ °C. The B₂O₃-doped Sm(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

Phase transition and electrical properties of LiNbO<Subscript>3</Subscript>-modified K<Subscript>0.49</Subscript>Na<Subscript>0.51</Subscript>NbO<Subscript>3</Subscript> lead-free piezoceramics

Lead-free (1-x)K_0.49Na_0.51NbO₃-xLiNbO₃ (KNN-LN, x = 0 ~ 0.08) piezoelectric ceramics were prepared by the conventional solid-state sintering method. The effects of LiNbO₃ doping amount x on the phase transition behavior and the electrical properties of KNN-LN ceramics were investigated. By increasing LiNbO₃ doping amount x, the orthorhombic-tetragonal polymorphic phase transition (PPT) temperature (T _o–t) of KNN-LN ceramics shifted downwards, however, the Curie temperature (T _c) slightly moved upwards. The room temperature phase structure thus changed from orthorhombic to tetragonal across the compositions with 0.05 ≤ x ≤ 0.06, named as PPT region. The composition with x = 0.06 in the tetragonal side of PPT region exhibited optimized electrical properties of d ₃₃ = 246pC/N, k _p = 41.6%, ε _r = 679, tgδ = 0.028, and Q _m = 52. In addition to its very high T _c = 467 °C, this ceramic can be an excellent candidate for replacing the lead-based piezoceramics in high temperature applications.     

Microwave dielectric properties of BaNb(2?x)TaxP2O11 (x?=?0, 0.5, 1, 1.5 and 2) ceramics

BaNb_(2−x)Ta_xP₂O₁₁ (x = 0, 0.5, 1, 1.5 and 2) ceramics were prepared by the conventional solid state ceramic route. The relative permittivity (ε_r) of the ceramics decreased from 25.3 for x = 0 to 12.9 for x = 2. BaTa₂P₂O₁₁ (x = 2) sintered at 1250°C showed good microwave dielectric properties with Q_u × f = 28,900 GHz and τ_f = − 29 ppm/°C. The addition of 5 wt% TiO₂ lowered the sintering temperature to 1225°C and improved τ_f to −6 ppm/°C with ε_r = 13.4 and Q_u × f = 17,200 GHz.     

Synthesis and sintering of nano-sized BaSnO<Subscript>3</Subscript> powders containing BaGeO<Subscript>3</Subscript>

The formation of solid solutions of the type [Ba(HOC₂H₄OH)₄][Sn_1−x Ge _x (OC₂H₄O)₃] as BaSn_1−x /Ge _x O₃ precursor and the phase evolution during its thermal decomposition are described in this paper. The 1,2-ethanediolato complexes can be decomposed to nano-sized BaSn_1−x /Ge _x O₃ preceramic powders. Samples with x = 0.05 consist of only a Ba(Sn,Ge)O₃ phase, whereas powders with x = 0.15 and 0.25 show diffraction patterns of both the Ba(Sn,Ge)O₃ and BaGeO₃ phase. The sintering behaviour was investigated on powders with a BaGeO₃ content of 5 and 15 mol%. These powders show a specific surface area of 15.4–15.9 m²/g and were obtained from calcination above 800 °C. The addition of BaGeO₃ reduced the sintering temperature of the ceramics drastically. BaSn_0.95Ge_0.05O₃ ceramics with a relative density of at least 90% can be obtained by sintering at 1150 °C for 1 h. The ceramic bodies reveal a fine microstructure with cubical-shaped grains between 0.25 and 0.6 μm. For dense ceramics, the sintering temperature could be reduced down to 1090 °C, when the soaking time was extended up to 10 h.     

Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO<Subscript>4</Subscript> ceramics

Gd³⁺ was chosen as a substitute for Bi³⁺ in BiNbO₄ ceramics, and the substitution effects on the sintering performance and microwave dielectric properties were studied in this paper. The high temperature triclinic phase was observed only in the Bi_0.98Gd_0.02NbO₄ ceramics when sintered at 920 °C. Both bulk densities and dielectric constant (ε_r) increased with the sintering temperature, while decreased with the Gd content. The quality factor (Q) exhibited a correlation to the Gd content and the microstructures of Bi_1−x Gd _x NbO₄ ceramics. At the sintering temperature of 900 °C, Bi_0.992Gd_0.008NbO₄ ceramics exhibited microwave dielectric properties of ε_r ∼ 43.87, Q × f ∼ 16,852 GHz (at 4.3 GHz), and its temperature coefficient of resonant frequency (τ_f) was found to be near-to-zero.     

Microwave dielectric properties of Ba<Subscript>5</Subscript>Nb<Subscript>4</Subscript>O<Subscript>15</Subscript> ceramic by molten salt method

Ba₅Nb₄O₁₅ powders were synthesized by molten-salt method in NaCl–KCl flux at a low temperature of 650–900 °C for 2 h, which is lower than that of the conventional solid-state reaction. This simple process involved mixing of the raw materials and salts in a certain proportion. Subsequent calcination of the mixtures led to Ba₅Nb₄O₁₅ powders at 650–900 °C. XRD and SEM techniques were used to characterize the phase and morphology of the fabricated Ba₅Nb₄O₁₅ powders, respectively. After sintering at 1,300 °C for 2 h, the densified Ba₅Nb₄O₁₅ ceramics with good microwave dielectric properties of ε_r = 39.2, Q × f approximated as 27,200 GHz and τ _f  = 72 ppm/°C have been obtained.     

Microwave dielectric properties of Ca4La2Ti5O17–LaAlO3 system ceramic materials

Compositions in the (1 − x) Ca₄La₂Ti₅O₁₇–xLaAlO₃ system were prepared in order to modify the positive temperature coefficient of the resonant frequency (τ _f ) of Ca₄La₂Ti₅O₁₇. The microwave dielectric properties and phase composition of this system ceramics were investigated. X-ray powder diffraction results showed that Ca₄La₂Ti₅O₁₇ and LaAlO₃ formed a solid solution only when x ≤ 0.2. The τ _f values showed a near linear decrease with increasing additions of LaAlO₃. It was observed that near zero τ _f value can be achieved as x = 0.64. The permittivity (ε_r) and the quality factor (Q × f) values exhibited a non-linear behavior with LaAlO₃ additions. The microwave dielectric properties were strongly correlated with composition, secondary phases and grain sizes. For practical application, a permittivity (ε_r) of 42, a quality factor (Q × f value) of 12,450 GHz and a temperature coefficient of resonant frequency (τ _f ) of ~0 ppm/°C for 0.36 Ca₄La₂Ti₅O₁₇−0.64 LaAlO₃ were proposed.     

Microstructure,phase transition and electrical properties of LiSbO<Subscript>3</Subscript>-doped (K<Subscript>0.49</Subscript>Na<Subscript>0.51</Subscript>)NbO<Subscript>3</Subscript> lead-free piezoelectric ceramics

Microstructure, phase transition and electrical properties of (1 − x)K_0.49Na_0.51NbO₃ − xLiSbO₃ (x = 0–0.08) lead-free piezoceramics prepared by the conventional solid-state sintering method were investigated with an emphasis on the effects of LiSbO₃ doping amount x. SEM results showed that the ceramic became denser by increasing LiSbO₃ doping amount x. Being indexed by XRD profiles, the ceramics changed from an orthorhombic perovskite structure to a tetragonal one across a composition region of 0.04 ≤ x≤0.05. The sample of LiSbO₃ doping amount x = 0.05 in tetragonal side of the region had the maximum values of piezoelectric constant (d ₃₃ = 256 pC/N) and planar electromechanical coupling coefficient (k _p = 42.7%). Meanwhile, this ceramic sample showed other good properties such as ε _r = 1,463, tgδ = 0.036, Q _m = 48, P _r = 19.8 μC/cm², E _c = 1.9 kV/mm and T _c = 340 °C, which indicated it was a promising lead-free piezoelectric material for ultrasonic transducer applications.     

Low-temperature sintering and microwave dielectric properties of MgTiO<Subscript>3</Subscript> ceramics

The effects of CuO–Bi₂O₃–V₂O₅ additions on the sintering temperature and the microwave dielectric properties of MgTiO₃ ceramics were investigated systematically. The CuO–Bi₂O₃–V₂O₅ (CuBiV) addition significantly lowered the densification temperature of MgTiO₃ ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO₄ and Cu₃(VO₄)₂ during sintering. The saturated dielectric constant (ε_r) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO₄. MgTiO₃ ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε _r= 18.1, Qf = 20300 GHz and τ_f = −57 ppm/ °C.