Morphology study of oriented SmBCO film deposited by MOCVD

c-axis-oriented SmBa_2Cu_3O_7(SmBCO) films have been deposited on(100)- LaA1O_3(LAO)substrate by metal organic chemical vapor deposition(MOCVD) technique.The effects of deposition temperature(T_(dep)) and total pressure(P_(tot)) on the orientation and microstructure of SmBCO films were investigated.The orientation of SmBCO films transformed from α-axis to c-axis with increasing of T_(dep) from 900 to 1 100℃.At T_(dep)=1 050℃,SmBCO films had c-axis orientation and tetragon surface.At P_(tot)~(dep)=400-800 Pa and T_(dep)=1 050 ℃,totally c-axis-oriented SmBCO films were obtained.The R_(dep) of SmBCO films increased firstly and then decreased with increasing P_(tot).The surface of SmBCO films exhibited tetragon morphology at 1 050 ℃ and400 Pa.Maximum thickness of SmBCO film deposited was 1.2μm at P_(tot)= 600 Pa,and the corresponding R_(dep)was 7.2 μm·h~(-1).     

Effects of annealing processes on Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> thin films

The Cu _x Si_1-x thin films have been grown by pulsed laser deposition (PLD) with in situ annealing on Si (001) and Si (111), respectively. The transformation of phase was detected by X-ray diffraction (XRD). The results showed that the as-deposited films were composed of Cu on both Si (001) and Si (111). The annealed thin films consisted of Cu + η”-Cu₃Si on Si (001) while Cu + η’-Cu₃Si on Si (111), respectively, at annealed temperature (T _a) = 300-600 °C. With the further increasing of T _a, at T _a= 700 °C, there was only one main phase, η”-Cu₃Si on Si (001) while η’-Cu₃Si on Si (111), respectively. The annealed thin films transformed from continuous dense structure to scattered-grain morphology with increasing T _a detected by field emission scanning electron microscope (FESEM). It was also showed that the grain size would enlarge with increasing annealing time (t _a).     

YIG thin film for RF integrated inductor

The yttrium iron garnet(YIG) thin films prepared by the sol-gel method and rapid thermal annealing(RTA) process for integrated inductor are investigated. The X-ray diffraction(XRD) results indicate that the YIG film annealed above 650 ℃ is poly-crystalline with single-phase garnet structure. Moreover, it can be found that the initial permeability μi, saturation magnetization M_S and coercivity H_c of these YIG films increase with increasing RTA temperature. Low temperature annealing after crystallization can further improve the magnetic properties of YIG film. Thereby, a planar integrated inductor in the presence of Si substrate/SiO_2 layer/Y_(2.8)Bi_(0.2)Fe_5O_(12) thin film/Cu spiral coil structure is fabricated successfully by the standard IC processes. Due to the magnetic enhancement originated from YIG film, the inductance L and quality factor Q of the inductor with YIG film are improved in a certain frequency range.     

Formation of Epitaxial Heavy-doped Silicon Films by PECVD Method

Plasma-enhanced CVD(PECVD) epitaxy at 200℃ was used to deposit heavy doped n-type silicon films. Post-annealing by rapid thermal processing was applied to improve the properties of the epitaxial layer. By analyzing the Raman spectra and the imaginary part of the dielectric constant spectra of the samples, it was found that high-quality heavy-doped epitaxial n-type silicon layer can be obtained by optimizing the parameters of the PECVD depositing process. Reducing the electrodes distance of the PECVD had a great effect on the crystallzation of the epitaxialed n-type silicon films. Sillicon films with high-crystallization were obtained with the electrodes distance of 18 mm. Post-annealing process can improve the crystallization and reduce the resistance of the epitaxial films. In our research, it was found that the sheet resistance(R_□) of the post-annealed films with thickness of about 50 nm has a simple relationship with RPH3/SiH_4(ratio of the flow rate of PH_3 and SiH_4) of the PECVD processing: R_□=-184-125 lg(R_(PH3/SiH4)). In the end, high-quality epitaxial n-type silicon film was obtained with R_□ of 15 Ω/□ and thickness of ~50 nm.     

Reaction mechanism and microstructure evolution of reaction sintered <Emphasis Type="Italic">h</Emphasis>-BN

Hexagonal boron nitride ceramic (h-BN) based on the nitridation of B powders was obtained by reaction sintering method. The effects of sintering temperature on the mechanical properties and microstructure of the resultant products were investigated and the reaction mechanism was discussed. Results showed that the reaction between B and N₂ occurred vigorously at temperatures ranging from 1 000 °C to 1 300 °C, which resulted in the generation of t-BN. When the temperature exceeded 1 450 °C, transformation from t-BN to h-BN began to occur. As the sintering temperature increased, the spherical particles of t-BN gradually transformed into fine sheet particles of h-BN. These particles subsequently displayed a compact arrangement to achieve a more uniform microstructure, thereby increasing the strength.     

Synthesis of MnxZn（1-x）Fe2O4 Nanopartieles by Ball-milling Hydrothermal Method

SMnxZn1-xFe2O4 （x=1,0.9,0.8,0.7,0.6,0.5,0.25,0） nanoparticles were prepared by ball-milling hydrothermal and investigated by X-ray diffraction, DTG and TEM. Nanocrystallite grain size was determined by X-ray linewidth to be from 63 A to 274 A. The thermal properties indicate absorbed water still remain at low temperature, crystalline wate will be decomposed from 230 ℃ to 260 ℃, partial Mn^2＋ will be oxidized near 730 ℃. TEM shows the ferrite particles pocess a spherical morphology and uniform nanosize.     

Enhanced Ferroelectric Polarization in Laser-ablated Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> Thin Films by Controlling Preferred Orientation

Polycrystalline Bi₄Ti₃O₁₂ thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/SiO₂/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi₄Ti₃O₁₂ thin films. The films with high fractions of a-axis and random orientations, i e, f (a-sxis) = 28.3% and f (random) = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm², respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization (2Pr = 35.5 μC/cm²) was obtained for the Bi₄Ti₃O₁₂ thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi₄Ti₃O₁₂ films.     

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

Al-doped ZnO (AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures (P _O2). The effect of PO2 on the crystal structure, preferred orientation as well as the electrical and optical properties of the films was investigated. The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure, showing a significant c-axis orientation. The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P _O2. At the optimum oxygen partial pressures of 10 - 15 Pa, the AZO thin films were epitaxially grown on c-sapphire substrates with the (0001) plane parallel to the substrate surface, i e, the epitaxial relationship was AZO (000 1) // Al₂O₃ (000 1). With increasing P _O2, the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly, which led to an enhancement in electrical conductivity of the AZO thin films. All the films were highly transparent with an optical transmittance higher than 85 %.     

Composition dependence of phase structure and electrical properties of (1−y)Bi1−xNdxFeO3−yBiScO3 ceramics

In this work, we have studied a new lead-free ceramic of(1-y)Bi_(1-x)Nd_xFeO_(3-y)BiScO_3(0.05≤x≤0.15 and 0.05≤y≤0.15) prepared by a conventional solid-state method, and the influences of Nd and Sc content on their phase structure and electrical properties were investigated in detail. The ceramics with 0.05≤x≤0.10 and 0.05≤y≤0.15 belong to an R3 c phase, and the rhombohedral-like and orthorhombic multiphase coexistence is established in the composition range of 0.125≤x≤0.15 and y=0. The electrical properties of the ceramics can be enhanced by modifying x and y values. The highest piezoelectric coefficient(d33~51 p C/N) is obtained in the ceramics with x=0.075 and y=0.125, which is superior to that of a pure BiFeO_3 ceramic. In addition, a lowest dielectric loss(tan δ~0.095%, f=100 k Hz) is shown in the ceramics with x=0.15 and y=0 due to the involvement of low defect concentrations, and the improved thermal stability of piezoelectricity at 20–600oC is possessed in the ceramics. We believe that the ceramics can play a meaningful role in the high-temperature lead-free piezoelectric applications.     

Crystal growth,structure and properties of bismuth triborate BiB<Subscript>3</Subscript>O<Subscript>6</Subscript> crystal

BiB₃O₆ (BIBO) single crystals with size of 46×23×10 mm³ and weight of 26.0 g have been successfully grown by top-seeded method. Problems encountered in the growth process of this crystal have been discussed in detail, and the methods of growing high-quality large crystals have been put forward. The relationship between their structure and properties is studied. The space group of monoclinic BiB₃O₆ is C2 and the cell parameters are a=7.1203(7) Å, b=4.9948(7) Å, c=6.5077(7) Å, β=105.586(8)″, and V=222.93(5) ų. The density of BIBO is 4.8965 g/cm³. The Mohs’s scale of hardness is 5.5–6. There is no cleavage face in the crystal. The transmittance of BIBO is about 80 percent in the range from visible coherent light to near-infrared light. The ultraviolet cutoff wavelength is at 276 nm. BiB₃O₆ is a biaxial crystal and has two sets of axes, and the relative orientation of (X, Y, Z) with regard to (a, b, c) is: X//b, (Y, c)=47.2°, (Z, a)=31.6°, determined by X-ray analysis combined with polarized microscopy. Second-harmonic-generation (SHG) experiments were carried out for the first time. In type I phase-matching (PM) directions (11.1°, 90°) and (168.9°, 90°), SHG conversion efficiencies of two directions for 1.064 μm light are up to 67.7% and 58%, respectively. We have also obtained the third-harmonic-generation (THG) of 1.064 μm. The comparative experiments between BIBO and KTP were carried out on conversion efficiency, transmittance and hardness. All the above results indicate that BiB₃O₆ is a kind of excellent nonlinear optical (NLO) crystal.     

Experimental research on the heating performance of a single cylinder refrigerant injection rotary compressor heat pump with flash tank

A single cylinder rotary compressor was applied in the refrigerant injection air-source heat pump to improve the heating performance in cold regions. In this study, the performance of an R410 A single cylinder rotary compressor vapor injection(SCRCVI) system was measured and analyzed by varying the compressor frequency f and injection pressure Pi njat the ambient temperature To d=–10°C.The experimental results indicated that an optimum injection pressure to gain the maximum COP_h (coefficient of performance) existed in the SCRCVI cycle. However, the maximum COP_h of the SCRCVI system decreased as the increase of the frequency, and the maximum COPhwas even lower than that of the CSVC system at high compressor frequency. Therefore, in view of the energy saving and emission reduction, the SCRCVI system should be switched to single stage compression system when the heating capacity demand could be satisfied at high compressor frequency f. Compared to the conventional single-stage vapor compression(CSVC) system, refrigerant injection could enhance the heating capacities and COP_h by 28.2% and 7.91%, respectively. The average total mass flow rate of the SCRCVI system was 24.68% higher than that of the CSVC system. As the SCRCVI system worked at the optimum injection pressure, the variation trends of the different system parameters were investigated in detail. These trends were reliably used to optimize the refrigerant injection system design and the control strategy. The parameter of(P_(inj)–P_s) could be adopted as the signals to control the opening of the upper stage electronic expansion valve EEV1.     

Effects of electrode on resistance switching properties of ZnMn<Subscript>2</Subscript>O<Subscript>4</Subscript> films deposited by magnetron sputtering

ZnMn₂O₄ films for resistance random access memory (RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn₂O₄ films were investigated. The ZnMn₂O₄ films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching (BRS) behavior dominated by the space-charge-limited conduction (SCLC) mechanism in the high resistance state (HRS) and the filament conduction mechanism in the low resistance state (LRS), but the ZnMn₂O₄ films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel (P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn₂O₄/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 10⁶ seconds. However, the highest R _HRS/R _LRS ratio of 10⁴ and the lowest V _ON and V _OFF of 3.0 V have been observed in Ag/ZnMn₂O₄/Pt device. Though the Ag/ZnMn₂O₄/n-Si device also possesses the highest R _HRS/R _LRS ratio of 10⁴, but the highest values of V _ON,V _OFF, R _HRS and R _LRS, as well as the poor endurance and retention characteristics.     

Low temperature synthesis of amorphous La<Subscript>0.7</Subscript>Zn<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> films grown on p<Superscript>+</Superscript>-Si substrates and its resistive switching properties

Amorphous La_0.7Zn_0.3MnO₃ (LZMO) films were deposited on p⁺-Si substrates by sol-gel method at low temperature of 450 °C. The Ag/LZMO/p⁺-Si device exhibits invertible bipolar resistive switching and the R _HRS/R _LRS was about 10⁴-10⁶ at room temperature which can be kept over 10³ switching cycles. Better endurance characteristics were observed in the Ag/LZMO/p⁺-Si device, the V _Set and the V _Reset almost remained after 10³ endurance switching cycles. According to electrical analyses, the conductor mechanism was in low resistor state (LRS) governed by the filament conductor and in the high state (HRS) dominated by the traps-controlled space-charge-limited current (SCLC) conductor.     

Effects of Annealing Process on Crystallization and Low Temperature Resistance Properties of PP-R Composites

The effects of the annealing process on the mechanical properties and crystallization behaviors of polypropylene random copolymer(PP-R) composites were investigated using differential scanning calorimetry(DSC), wide-angle X-ray diffraction(WAXD), and dynamic mechanical analysis(DMA), and scanning electron microscopy(SEM). The experimental results indicated that the annealing process significantly influenced the comprehensive properties of PP-R composites. At temperatures below 23 ℃, the impact strength of the PP-R composites annealed at 120 ℃ for 6 h was relatively high at 74.73 k J/m~2, which was 16.8% higher than that of the samples annealed at 80 ℃ for 6 h. At low temperatures(-30-0 ℃), the impact strength ranged from approximately 13.31 k J/m~2 to 54.4 k J/m~2. In addition, the annealing process conducted at 120 ℃ for 6 h improved the crystalline structure and low-temperature toughness of the PP-R composites and induced α-form to β-form crystal transformation. The work provides a possible method to reinforce and toughen the semicrystalline polymer at low temperatures(-30-0 ℃) by annealing.     

Elimination of Voids at Interface of <Emphasis Type="Italic">β</Emphasis>-SiC Films and Si Substrate by Laser CVD

Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (T_in), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing T_in. The surface showed a layer-by-layer microstructure with voids above T_in ? 773 K, and then transformed into mosaic structure without voids at T_in= 298 K. The mechanism of the elimination of voids was discussed. At T_in =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.     

Stability of <Emphasis Type="Italic">γ</Emphasis>′ multimodal microstructure in a Ni-based powder metallurgy superalloy

Multimodal size distribution of γ′ phase was obtained in a slow-cooling experiment following supersolvus solution treatment (1191°C). The morphology of the secondary γ′ particles exhibited splitting and protrusion instabilities. In the subsequent aging process (815°C), reverse coarsening was observed, i.e., the average precipitate size decreased with increasing aging time. Reverse coarsening slows the coarsening rate of the precipitates, increases the hardness of the alloy, and greatly improves the morphological stability of the γ′ phase.     

Statistical study of magnetotail flux ropes near the lunar orbit

Flux-rope/TCR events near the magnetotail lunar orbit(-67R_E GSM X* -39RE) were studied using magnetic-field and plasma data measured by THEMIS B and C between January 2011 and March 2012. The aberrant coordinate GSM*, where the X* axis is rotated 4° relative to GSM-X, was used to count the occurrence rate. The number ratio of earthward to tailward events was about 3:5. Moreover, the event occurrence rate distribution showed a clear dawn-dusk asymmetry distribution, with dusk-side events accounting for 57.98%. A superposed epoch analysis of the flux-rope events showed that earthward events had a shorter duration in the leading than in the trailing part. Earthward events also displayed a lower temperature and a lower flow speed than tailward events. We studied the relationship between the event occurrence rate and geomagnetic activity level even further. The occurrence rate of tailward flux-rope/TCR events increases with increasing AE-index, whereas earthward events occur mainly in the relatively quiet period of geomagnetic activity(AE ~ 100–300 n T). Flux-rope/TCR events identified within a 10 mm time frame were treated as belonging to a single reconnection event. By comparing the occurrence rates of earthward and tailward events along X*, we estimated the most likely location of the near-Earth reconnection site as X* = -36R_E.     

Bimodal plate structures induced by pulsed laser in duplex-phase Zr alloy

A duplex-phase Zr-2.5Nb alloy was treated by pulsed laser, followed by careful microstructural characterization using field emission gun scanning electron microscope and attached electron backscatter diffraction. Beneath the modification zones with common uniform α-plate structures(UPS), a layer of unreported bimodal α-plate structures(BPS) featured by coarse(submicron)plates forming multiple cores surrounded by dense fine(nanoscale) plates was found. Presence of such BPS is attributed to non-equilibrium thermodynamic conditions induced by the pulsed laser treatments. Limited diffusion of Nb due to the short pulse during laser heating allows β phases with distinctly different Nb contents to be presented: Nb-enriched prior β films and Nb-depleted β phases, transforming into the fine and the coarse plates during cooling, respectively. Orientation analyses show that both types of plates in the BPS are aroused essentially from a single β orientation, suggesting epitaxial growth of the Nb-depletedβ phases from the preexisting β films.     

Remarkable improvement of ferroelectric properties and leakage current in BiFeO<Subscript>3</Subscript> thin films by nd modification

Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped (x=0.05-0.20) BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface morphology, leakage current, ferroelectric properties, and optical properties of BiFeO₃^- based thin films were investigated. The substitution of Nd³⁺ ions for the Bi3+ site converts the structure from rhombohedral to coexisting tetragonal and orthorhombic. Nd doping improves the crystallinity of BiFeO₃ thin films. The leakage current of Nd-doped BiFeO₃ decreases by two to three orders of magnitude compared with that of pure BiFeO₃. Among the samples, 15% Nd-doped BiFeO₃ exhibits the strongest ferroelectric polarization of 17.96 μC/cm². Furthermore, the absorption edges of Bi_1-xNd _x FeO₃ thin films show a slight red-shift after Nd doping.     

Influence of elevated curing temperature on the properties of cement paste and concrete at the same hydration degree

Three different curing temperatures(20 ℃, 40 ℃, and 60 ℃) were set, so that the nonevaporable water(w_n) contents of plain cement pastes cured at these three temperatures were measured to determine the hydration degree of cement. Tests were carried out to compare the pore structure and strength of cement paste, as well as the strength and permeability of concrete under different temperature curing conditions when their cements were cured to the same hydration degree. The experimental results show that either at a relatively low hydration degree(w_n=15%) or high hydration degree(w_n=16.5%), elevated curing temperature has little influence on the hydration products of cement paste, while it has a negative influence on the pore structure and compressive strength of cement paste. However, this negative effect is weaker at high hydration degree. The large capillary pore(100 nm) volumes of cement pastes remain almost the same at high hydration degree, regardless of curing temperatures. As for the concrete, elevated curing temperature also has negative influence on its compressive strength development, at both low hydration degree and high hydration degree. And this negative effect is stronger than that on cement paste's compressive strength at the same hydration degree. On the whole, elevated curing temperature has little influence on the resistance of concrete to chloride ion penetration.