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1.
An MIS coplanar waveguide propagating a slow-wave mode has been characterised in the time domain. The theoretical analysis proposed to obtain the time-domain response of the line gives results in good agreement with measurements. The circuit analysis used is suitable for the determination of spurious propagation effects, inherent to the use of miniature waveguides encountered in MMICs, such as Schottky contact coplanar lines and coupled microstrip lines laid on MIS substrates.  相似文献   

2.
This paper presents a quasi-TM approach for the fundamental mode of transmission lines with semiconductor substrates and nonperfect metallic conductors. The approach has allowed us to develop a transmission-line model by properly defining frequency-dependent parameters in terms of the quasi-static electric potential and the electric current density along the propagation direction in the line. The previous quasi-TM analysis avoids the involved numerical root finding process typical in full-wave analysis, and overcomes the limitations of the conventional quasi-TEM approach to account for the effects of the longitudinal currents present both in the lossy substrates and in the nonperfect conductors. The transmission-line parameters have been computed by a hybrid technique that combines the method of lines with the method of the moments (MoM). The total CPU effort has been considerably reduced thanks to the possibility of finding closed-form expressions for the reaction integrals appearing in the MoM. Comparisons with previous computed and measured results show the validity of the present model.  相似文献   

3.
A simple model for the propagation of high-frequency signals on coplanar striplines with lossy semiconductor substrates is proposed and demonstrated. This model incorporates the effect of a conductive substrate through the loss tangent in a distributed-circuit analysis extended to high frequencies. Very strong attenuation and dispersion due to the substrate are observed even when the GaAs conductance is only 1 mho/cm, corresponding to a doping density of around 1015 cm -3. The accuracy of this model is tested with a direct comparison to experimental data of picosecond pulse propagation on a doped GaAs coplanar stripline (CPS) measured in the time domain using the electro-optic (EO) sampling technique. Good agreement is found in terms of the attenuation and phase velocity of the distorted pulses at four propagation distances up to 300 μm. The pulse propagation on a multiple modulation-doped layer is also studied experimentally as a prototype of high-frequency signal propagation on the gate of a modulation-doped field-effect transistor (MODFET). The attenuation shows linear frequency dependence up to 1.0 THz, contrary to the cubic or quadratic dependence of coplanar transmission lines on low-loss substrates  相似文献   

4.
The paper deals with an experimental investigation of the behavior of high-frequency Si/SiO2/Al based interconnects when an extra DC bias voltage is applied, by means of which the conductor line changes the surface properties of the semiconductor substrate. By superposing a DC bias to the high-speed signal applied to the line, the insertion losses caused by the semiconductor substrate show a significant decrease over the observed frequency range. In order to study this effect a number of test samples containing several microstrip asymmetric transmission lines were prepared and measured. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The observed effect can be successfully applied in high-speed blocks with tunable parameters.  相似文献   

5.
Experimental verification of analytic formulas for the dispersion and the attenuation of electrical transient signals propagating on coplanar transmission lines is presented. The verification is done in the frequency domain over a terahertz range although the experiments are in the time domain. The analytic formulas are obtained from fits to the full-wave analysis results. It is quantitatively verified that the full-wave steady-state solutions can be directly applied to the transient time-domain propagation experiments. Subpicosecond electrical pulses and an external electrooptic sampling technique are used to obtain the time-domain propagation data. From the Fourier transforms of the time-domain data both the attenuation and the phase information as a function of frequency are extracted. The dispersion and the attenuation characteristics are investigated for both coplanar waveguide and coplanar strip transmission lines. The investigation is carried out on both semiinsulating semiconductor and dielectric substrate materials. No observable losses caused by the semiconductor material are indicated  相似文献   

6.
Low-loss single-mode semiconductor rib optical waveguides fabricated in GaAs-AlGaAs epitaxial layers are removed from GaAs substrates and bonded to transfer substrates using a benzocyclobutene organic polymer. Optical quality facets were obtained by cleaving through the transfer substrate. An average propagation loss of 0.39 and 0.48 dB/cm at 1.55 μm wavelength for TE and TM polarizations, respectively, were measured. This was on average 0.05 dB/cm greater than control guides fabricated in GaAs-AlGaAs epilayers on GaAs substrates with air as the top cladding. This demonstrates the feasibility of a process enabling semiconductor polymer integration and processing both sides of an epitaxial layer  相似文献   

7.
We investigate the attenuation and phase velocity characteristics of coplanar strip (CPS) transmission lines designed for high-speed, low-loss propagation at sub-THz frequencies. Photoconductor switches driven by femtosecond optical pulses were used to generate propagating picosecond electrical transients. External electrooptic sampling was used to measure the time-domain impulse-response characteristics with subpicosecond time resolution. The finite-difference transmission-line-matrix (FD-TLM) numerical method was used to model picosecond pulse propagation on identical transmission lines. The experiment and the numeric simulations have clarified nonquasistatic high-frequency effects and were shown to agree over a 500 GHz frequency range. Additionally, analytic quasi-static velocity and characteristic impedance formulas have been verified and their frequency range of validity established for the investigated CPS geometries. Radiation into the substrate is the dominant loss mechanism at frequencies above ~100 GHz for the CPS lines on thick substrates. CPS transmission line fabrication on thin substrates has been proposed as a method for reducing high-frequency loss and increasing the microwave propagation velocity. CPS transmission lines fabricated on 8-μm-thick Si membranes have been studied and demonstrated to possess the desired high-speed, low-loss properties  相似文献   

8.
The characteristic impedance and the propagation constant of coplanar transmission lines on lossless and lossy substrates are given and compared with computed values within the frequency region 0?8 GHz. Al2O3 and n-Si substrates are used.  相似文献   

9.
Journal of Infrared, Millimeter, and Terahertz Waves - The peculiarities of electromagnetic wave propagation in transmission lines with a gyromagnetic semiconductor element are analysed....  相似文献   

10.
The spectral-domain technique is extended to the study of shielded microstrip lines on biaxial substrates. The analysis simultaneously includes dielectric and magnetic anisotropy effects. A fourth-order formulation leads to the determination of the appropriate Green's function for the structure. The characteristic equation is formed through the application of the Galerkin method to the equations resulting from the boundary conditions on the strip. Numerical results calculated by this method for isotropic as well as dielectrically anisotropic substrates are compared with the existing data, and in both cases a very good agreement is observed. New data on the propagation constant of the shielded microstrip with different substrate permittivities and permeabilities are presented to illustrate the effects of the material parameters on the characteristics of the microstrip line  相似文献   

11.
The attenuation constant for microstrip lines on fused quartz and their effective relative dielectric constant were measured and the results are discussed. The propagation losses in these lines proved to be smaller than those mentioned in the literature. The effective relative dielectric constant is found to be independent of frequency up to 12 GHz. The conductors were deposited without an adhesive layer but with sufficient adhesion for pressure bonding semiconductor chips.  相似文献   

12.
The analysis of dispersion characteristics of transient signal in microstrip lines with anisotropic substrate is developed here, with particular attention directed toward the effects of arbitrary orientations of the principal optical axis in anisotropic substrates. Numerical simulations are carried out for the propagation of transient signals, square or Guassian pulses, along microstrips with anisotropic substrates. It is shown that the dispersion characteristics is substantially affected by the change of the orientation angle of the principal optical axis in the substrate.  相似文献   

13.
The Transverse Transmission Line (TTL) is used in the theory of the overlay shielded microstrip lines considering the superconductor strip on two semiconductor regions. The superconductor effect is included with the boundary condition of the surface impedance, that is related to the complex conductivity of the material, calculated from the advanced two-fluid model. Applying the moment method the complex propagation constant of the structure, including the phase constant and the attenuation constant, is obtained. Results are presented for the complex propagation constant, versus the frequency and the temperature, of this overlay superconducting microstrip lines.  相似文献   

14.
The propagation characteristics of metal-insulator-semiconductor (MIS) lines are controlled by the resistivity of the substrate, the operating frequency and the ratio of the semiconductor to insulator layer thicknesses. A strong interfacial polarisation, also known as the Maxwell-Wagner polarisation, is often responsible for the significant slow-down of the propagation velocity of MIS microstrip transmission lines. This phenomenon has been applied in the development of miniature delay lines exhibiting large electrical dimensions. In this paper we review most previously presented designs and we examine the effect of this polarization mechanism under various parameters. Finally, the presented micro-scale delay lines, exhibit comparable slowing factors with our predecessors at the cost of lower attenuation.  相似文献   

15.
文章通过对14oz线铜制作的铜基板的加工工艺试验的总结,提出了加工工艺,解决了加工中的难题,为高线铜厚制作的特种铜基印制板的批量生产奠定了基础。  相似文献   

16.
A differential matrix operator technique is presented to simplify the formulation of boundary-value problems for open millimeter-wave integrated circuits that use anisotropic substrates. The spectral-domain method is applied to analyze the propagation characteristics of single and coupled microstrip lines printed on anisotropic substrates whose properties are described by both [∈] and [μ] tensors. In addition to considering the permittivity and permeability as a uniaxial or biaxial tensor, the effects of coordinate misalignment between the principal axes of [∈] and those of the structure in the transverse plane are also included. It is shown that the misalignment in [∈] and the presence of the [μ] tensor have a significant effect on the dispersive properties of these two structures  相似文献   

17.
A new variational expression is derived for the propagation constant of inhomogeneous shielded and open planar lines with gyrotropic lossy substrates. It yields rapidly convergent results even when higher order modes are considered. Results obtained on open and shielded lines and structures agree very well with experimental results. The efficiency of the formulation is such that calculations are made on-line on a regular PC  相似文献   

18.
Switchable attenuating medium propagation (SAMP) devices are coplanar transmission lines on an epitaxial semiconductor (GaAs) substrate. These transmission lines can be switched rapidly between states of high and low attenuation by controlling the width of a depletion layer under the center conductor. SAMP devices can easily be characterized by the use of transmission line theory. They are well suited for use in monolithic microwave integrated circuits (MMIC's). Experimental performance data and theoretical background will be presented.  相似文献   

19.
The high frequency characteristics of shielded slot-lines are investigated using a modified Wiener-Hopf technique. The analysis includes the case of uniaxially anisotropic substrates when the principal axis is directed normal to the substrate. The obtained solution is especially useful at higher frequencies where other methods tend to be less effective. Numerical results are given for lines on high dielectric constant substrates over the full usable frequency range. It is shown that lines can be used as transmission elements up to a certain limiting frequency beyond which they will radiate. Physical aspects of the propagation in slot-lines are discussed and the effect of the shields on the properties of the guided modes is explained.  相似文献   

20.
The very low microwave surface resistance of high-temperature-superconductor (HTS) thin films allows the realization of microwave devices with performance superior to those made by conventional technology. Superconducting delay lines, for example, have very low propagation loss and dispersion. Long, low-loss, superconducting delay lines on both thinned LaAlO3 and sapphire substrates are presented. Delay lines with 27- and 44-ns delay have been made, for the first time, on 5-cm-diameter 254- and 127-μm-thick LaAlO3 substrates, respectively. The insertion losses at 77 K and 6 GHz are 6 and 16 dB, respectively. Delay lines with 9-ns delay have, for the first time, been produced on M-plane sapphire substrates and demonstrate, at 77 K, an insertion loss of 1.0 dB at 6 GHz. A 2.5%-bandwidth 10 GHz four pole edge-coupled bandpass filter on M-plane sapphire substrates is also reported. The filter has minimum insertion loss of less than 0.5 dB at 9.75 GHz and 71 K  相似文献   

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