Ultralow leakage In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate

A novel top-illuminated In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 /spl mu/m are 13 pA, 0.6 A/W, 3.4/spl times/10/sup -15/ W/Hz/sup 1/2/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.     

Geiger mode operation of an In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode

Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In/sub 0.52/Al/sub 0.48/As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.     

Metal-semiconductor-metal photodetector on p-type In/sub 0.53/Ga/sub 0.47/As

An MSM Schottky barrier photodetector based on p-type In/sub 0.53/Ga/sub 0.47/As suitable for detection in the 0.8-1.7 wavelength range is reported. Aluminium metallisation was used. The large area devices exhibited responsivity of about 0.4 A/W at 1.3 mu m and tau /sub on/>     

MESFET-like transferred-electron devices in In/sub 0.53/Ga/sub 0.47/As

In/sub 0.53/Ga/sub 0.47/As transferred-electron devices with Schottky-gate electrodes were fabricated. These devices can be used in optoelectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In/sub 0.53/Ga/sub 0.47/As. The triggering of single dipole domains in the device was demonstrated.<>     

In0.53Ga0.47As p-i-n photodiodes for long-wavelength fibre-optic systems

We describe p-i-n photodiodes fabricated from In0.53Ga0.47As grown lattice-matched on InP substrates. These diodes exhibit low junction capacitance (C<1 pF at 20 V reverse bias), low dark current (?10 nA), high break-down voltage (110 V) and wide photoresponse extending beyond 1.7 ?m.     

Threshold voltage of submicron Ga/sub 0.47/In/sub 0.53/As HIGFETs

Presents threshold voltage data for Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As/InP heterostructure insulated gate FETs (HIGFETs) with gate lengths from 1.2 mu m to 0.4 mu m. The refractory-gate, self-aligned fabrication process was applied to MBE-grown structures with 300 AA Ga/sub 0.47/In/sub 0.53/As channels and semi-insulating superlattice buffers to achieve sharp pinchoff with excellent threshold uniformity. HIGFETs with L/sub g/=1.2 mu m showed a threshold voltage of -0.076+or-0.019 V, making them well-suited to application in direct-coupled FET logic (DCFL) circuits.<>     

Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe

Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe was discussed. Electrical activation of more than 100%, a broad implant profile and an average electron mobility of 3000 cm2/Vs are observed in layers implanted with a dose of 2 × 1013 cm?2 at 260 keV and annealed at 670°C for 15 min. The results of photoluminescence measurements are also presented.     

Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.     

Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP

Selective liquid phase epitaxy (SLPE) of high purity(n = 2 × 10¹⁵ cm^-3) In_0.53Ga_0.47As on SiO₂-masked (100)-InP:Fe substrates has been performed and investigated using Normarski interference contrast microscopy and SEM. The infill growth was done at low temperatures (˜ 585° C) directly into chemically (HC1:CH₃COOH:H₂O₂) etched cavities without melt-etching. Square and circular recesses of 2–3 μm depth and varying size (100-500 μm) have been used in contrast to common reported regrowth experiments in long channels. Enormously enhanced growth rates have been found within the small structures. Orientation dependent growth effects are described. The realization of selectively grown areas with flat surface morphology has been achieved which is important for optoelectronic integration. Most information contained in this paper was presented at the 27th Electronic Materials Conference, Boulder, Co., June 20, 1985.     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.     

Room-temperature operation of Ga0.47In0.53As/AI0.48In0.52As resonant tunnelling diodes

The first room-temperature operation of Ga0.47In0.53As/Al0.48In0.52As resonant tunnelling (RT) diodes is reported. The peak/valley ratio of the current is as high as 4:1 at room temperature and is 15:1 at 80 K. These are the highest values of peak/valley ratio at the respective temperatures, reported so far, in this material system. The position of the peak in the current/voltage characteristic also showed good agreement with that obtained from an electron tunnelling transmission calculation.     

A 1 cm/spl times/1 cm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 1 cm/spl times/1 cm array of 100 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.     

Ohmic contacts on p-type Ga0.47In0.53As/InP

Ohmic contacts of Au and Ag based Zn containing alloys on p-type Ga_0.47In_0.53As have been studied using intermediate layers of Ti and Ni, respectively. Low specific contact resistance in the order of 10⁻⁵ Ωcm² are achieved. In case of AuZn alloy, the Ti intermediate metal layer causes higher contact resistances together with a worse contact morphology in contrast to Ni intermediate layers. However for AgZn contacts Ti adherent layers improve the contact resistances, especially for lower alloying temperatures. Moreover these contacts exhibit significant smoother interfaces as revealed by TEM micrographs. Thus AgZn contacts apply best to low resistive contacting of very thin p-layers forming e.g. the base of a ballistic device.     

InP衬底AlAs/In0.53Ga0.47As RTD的研制

报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制.结构材料由分子束外延制备,衬底片为(001)半绝缘InP单晶片,器件制作选用台面结构.测得室温下的峰值电流密度为1.06×105 A/cm2,峰-谷电流比为7.4,是国内报道的首例InP材料体系RTD器件.     

InP衬底AlAs/In0.53Ga0.47As RTD的研制

报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制.结构材料由分子束外延制备,衬底片为(001)半绝缘InP单晶片,器件制作选用台面结构.测得室温下的峰值电流密度为1.06×105 A/cm2,峰-谷电流比为7.4,是国内报道的首例InP材料体系RTD器件.     

Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layers

Ga0.47In0.53As JFETs and MESFETs have been fabricated with a lattice-mismatched GaAs layer under the gate. The GaAs could be grown with good electrical and crystallo-graphic quality in spite of the large lattice mismatch by an OM-VPE process. Pn, Np and Schottky diodes were fabricated and applied to n-GaInAs FET channels. Both types of devices exhibited high transconductances of about 100 mS/mm.     

High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy

In/sub 0.53/Ga/sub 0.47/As-based monolithic interconnected modules (MIMs) of thermophotovoltaic (TPV) devices lattice-matched to InP were grown by solid source molecular beam epitaxy. The MIM device consisted of ten individual In/sub 0.53/Ga/sub 0.47/As TPV cells connected in series on an InP substrate. An open-circuit voltage (V/sub oc/) of 4.82 V, short-circuit current density (J/sub sc/) of 1.03 A/cm/sup 2/ and fill factor of /spl sim/73% were achieved for a ten-junction MIM with a bandgap of 0.74 eV under high intensity white light illumination. Device performance uniformity was better than 1.5% across a full 2-in InP wafer. The V/sub oc/ and J/sub sc/ values are the highest yet reported for 0.74-eV band gap n-p-n MIM devices.     

Direct optical injection locking of monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MODFET oscillators

The authors have fabricated monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As 0.25 mu m gate modulation-doped field effect transistor (MODFET) oscillators. The results of direct optical subharmonic injection locking of these oscillator circuits at 10.159 and 19.033 GHz are presented.<>     

Microwave performance of 0.4 mu m gate metamorphic In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As HEMT on GaAs substrate

MBE grown metamorphic In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As/GaAs high electron mobility transistors (HEMTs) have been successfully fabricated. A 0.4 mu m triangular gate device showed transconductance as high as 700 mS/mm at a current density of 230 mA/mm. The measured f/sub T/ was 45 GHz and f/sub max/ was 115 GHz. These high values are, to the authors knowledge, the first reported for submicrometre metamorphic InAlAs/InGaAs/GaAs HEMTs with an indium content of 30%.<>