Field emission from nonaligned zinc oxide nanowires

Zinc oxide (ZnO) nanowires with an average diameter of 15 nm were grown using a vapor phase transport process. Field emission was achieved from these nanowires in spite of their random orientation. The electric field for the extraction of a 10 μA/cm² current density was measured to range from 4.4 to 5.0 V/μm, and that for a 1 mA/cm² current density from 7.6 to 8.7 V/μm, depending on whether the sample was submitted to a heat treatment. The results exhibit the potential application of ZnO nanowires as field emitters in future flat panel displays.     

Efficient field emission properties of ZnO (core)/graphite (shell) nanowires

In this work the field emission studies of a new type of field emitter, zinc oxide (ZnO) core/graphitic (g-C) shell nanowires are presented. The nanowires are synthesized by chemical vapor deposition of zinc acetate at 1300 °C Scanning and transmission electron microscopy characterization confirm high aspect ratio and novel core–shell morphology of the nanowires. Raman spectrum of the nanowires mat represents the characteristic Raman modes from g-C shell as well as from the ZnO core. A low turn on field of 2.75 V/μm and a high current density of 1.0 mA/cm² at 4.5 V/μm for ZnO/g-C nanowires ensure the superior field emission behavior compared to the bare ZnO nanowires.     

Field emission properties of electrodeposited cobalt nanowire arrays grown in anodic aluminum oxide

The excellent vertically aligned cobalt nanowire arrays were electrodeposited into anodic aluminum oxide (AAO) templates. Each nanowire has the same length with 20 μm and the diameter with 60 nm. The field emission characteristics of the nanowires were firstly studied based on current-voltage measurements and the Fowler-Nordheim equation. The electron field emission measurements on the samples showed a turn-on field (1 mA/cm²) of 1.66 V/μm, a field enhancement factor of β = 3054 and a current density of 600 mA/cm² at a relatively low voltage of 4.3 V/μm. The nanowire arrays could be an ideal alternative to carbon nanotubes and ZnO nanowires for the fabrication of flat panel displays.     

Optical and field emission characteristics of anodic aluminium oxide/ZnO hybrid nanostructure

Arrays of ZnO nanowires (NWs) were fabricated within the well-distributed pores of anodic aluminium oxide (AAO) template by a simple chemical method. The photoluminescence (PL) and field emission (FE) properties of the AAO/ZnO NWs hybrid structure were investigated in detail. The hybrid nanostructure exhibits interesting PL characteristics. ZnO NWs exhibit UV emission at 378 nm and two prominent blue-green emissions at about 462 and 508 nm. Intense blue emission from the AAO template itself was observed at around 430 nm. Herein, for the first time we report the FE characteristics of the ZnO/AAO hybrid structure to show the influence of the AAO template on the FE property of the hybrid structure. It is found that the turn-on electric field of the vertically grown and aligned ZnO NWs within the pores of AAO template is lower than the entangled unaligned ZnO NWs extracted from the template. Although the AAO template exhibits no FE current but it helps to achieve better FE property of the ZnO NWs through better alignment. The turn-on electric field of aligned NWs was found to be 3 V μm⁻¹ at a current of 0.1 μA. Results indicate that the AAO embedded ZnO NW hybrid structure may find useful applications in luminescent and field emission display devices.     

Field emission from zinc oxide nanostructures and its degradation

Arrays of zinc oxide (ZnO) nanowires and nanobelts were synthesized by the thermal evaporation of mixed powders of ZnO and graphite. Neither catalyst nor vacuum environment was involved in the fabrication. For comparison, the ZnO nanowires were grown on a pre-deposited transitional ZnO film on a brass substrate and the ZnO nanobelts were grown directly on a Si substrate. Their field emission properties were systematically measured. Current density of 10 μA/cm² was achieved at the fields of 5.7 and 6.2 V/μm from the nanowires and nanobelts, respectively. Also, the emission sites were found to distribute uniformly on the whole cathode. In the preliminary test on the stability, the ZnO nanobelts, which were sharp at the tip but wide at the root, exhibited better robustness than the ZnO nanowires. The post-test scanning electron microscopy (SEM) observation showed that the degradation of their field emission capability resulted from the breaking of the nanowires, which was tentatively attributed to the resistive heating during the field emission. In contrast, the shedding of the ZnO from the substrate was not so serious as imagined.     

Study on field emission and photoluminescence properties of ZnO/graphene hybrids grown on Si substrates

Zinc oxide/graphene (ZnO/G) hybrids are prepared on n-Si (1 0 0) substrates by electrophoretic deposition and magnetron sputtering technique. The crystal structure, morphology and photoluminescence (PL) properties of the ZnO/G hybrids are analyzed via X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and fluorescence–phosphorescence spectrometer, respectively. The results indicate that the crystal quality of ZnO nanostructure deteriorates after depositing graphene buffer layer. Whereas many three dimensional stacking blowballs form in the ZnO/G hybrid, creating a larger surface area than that of ZnO nanostructure. The photoluminescence (PL) spectrum of the ZnO/G hybrid contains multi-peaks, which are consistent with ZnO nanostructure except for two new peaks at 390 and 618 nm. In addition, field emission measurement reveals that E_to and E_thr decrease from 8.01 V μm⁻¹ and 14.90 V μm⁻¹ of the ZnO nanostructure to 2.72 V μm⁻¹ and 7.70 V μm⁻¹ of the ZnO/G hybrid. ZnO/G hybrid is characteristic of having excellent emitting behavior suitable for application in field emission technology.     

Electron field emission studies on ZnO nanowires

The zinc oxide (ZnO) nanowires with different morphology and diameter were synthesized on silicon (100) substrates by heating pure zinc powder at low temperatures of 450 °C and 480 °C. Scanning electron microscopy (SEM) was used to analyze the morphology and diameter of samples. The electron field emission properties between different morphology of ZnO nanowires samples were compared. A low turn-on field at 3.6 V/μm was observed from nanorods due to better alignment, and a strong emission current density of 3.6 mA/cm² at electronic field 9.0V/μm was obtained from needle-like nanowires sample. The emission stability of ZnO samples is also presented.     

Efficient field emission from tetrapod-like zinc oxide nanoneedles

Tetrapod-like zinc oxide (ZnO) nanoneedles were fabricated using a simple and economical method of rapid heating high purity zinc powders at 900 °C. No catalyst and vacuum were employed in the experiment. Field-emission measurements showed that the turn-on field of the synthesized tetrapod-like ZnO nanoneedles was as low as 1.8 V/μm at the emission current density of 1.0 μA/cm² and the emission current density reached 1.0 mA/cm² under an applied field of about 3.9 V/μm. The low turn-on field, high emission current density, and good electron emission stability make the ZnO nanoneedles one of the promising candidates for field-emission displays.     

The fabrication and properties of field emission display based on ZnO tetrapod-liked nanostructure

ZnO tetrapod-liked nanostructure with fine crystalline structure and high purity was synthesized via CVD method. Each branch of the nanotetrapod was 50-200 nm in diameter and the nanotetrapod structure exhibited a high aspect ratio. Cathode emission materials with this nanostructure were employed to fabricate field emission display with 72 × 72 pixel array. The as-obtained device showed an ideal field emission property with a threshold electric field of 4.1 V/μm and an emission current density of 1 mA/cm² when the electric field reached 11.5 V/μm. The field enhancement factor of the nanotetrapods was calculated to be 1852. Using proper circuit drive, dynamic Chinese characters can be successfully displayed in the device.     

Novel low temperature synthesis of ZnO nanostructures and its efficient field emission property

We have developed a novel, simple and cost effective wet chemical synthetic route for the production of ZnO nanoneedles and nanoflowers at low temperature. The synthesis process does not require any surfactant, template or pre-seeding. The synthesized ZnO nanoneedles have very sharp tips with their lengths in the range 2-3 μm, while for the case of nanoflowers, the nanoneedles were bunched together. X-ray diffraction study and X-ray photoelectron spectroscopic studies confirmed the formation of pure ZnO phase. Studies on the electron field emission property of the grown nanostructures showed that they are very efficient field emitter. The turn-on fields and the threshold fields are 3.6 V/μm, 4.4 V/μm and 5.4 V/μm, 6.8 V/μm for the ZnO nanoneedles and ZnO nanoflowers, respectively. The enhanced field emission property was attributed to the presence of sharp tips of the nanostructures.     

Field emission of Co nanowires in polycarbonate template

The Co nanowire arrays were synthesized by electrodeposition in polycarbonate template (PC) with 4 μm thickness. Electron field emission properties of cobalt nanowires were studied for wires with different aspect ratios, R ranged between 10 and 60, while the diameter of wires was fixed about 50 nm. The field emission properties of the samples showed low turn on electric field (E_to) with values varying between 2.9 and 11.3 V/μm showing a minimum value for R = 20 (E_to < 3 V/μm). On the other hand, the enhancement factor shows a peak for nanowires length about 1 μm. Field emission data using the Fowler-Nordhiem theory showed nearly straight-line nature confirming cold field emission of electrons. The fabricated field emitter arrays of cobalt nanowires in the PC templates opens the possibility of fabricating flexible flat panel displays.     

Fabrication of carbon nanoflakes by RF sputtering for field emission applications

In this paper, an ultra thin sheet-like carbon nanostructure, carbon nanoflake (CNF), has been effectively fabricated by RF sputtering on Si substrate without any catalyst or special substrate pre-treatment. The CNFs were chosen to be the field emission emitters because of their very sharp and thin edges which are potentially good electron field emission sites. The effect of deposition parameters such as substrate temperature, gas flow ratio and RF power on the field emission properties is discussed in detail. The sheet-like structures with thickness of about 10 nm or less stand on edge on the substrate and have a defective graphite structure. The field emission properties of the sample deposited at the optimum deposition conditions are turn-on field of 5.5 V/μm and current density of 1.4 mA/cm² at 11 V/μm. Considering the inexpensive manufacturing cost, lower synthesis temperature and ease of large-area preparation, the CNFs with low turn-on field deposited by RF sputtering might have a potential application in field emission devices.     

Investigation of indium oxide as a self-catalyst in ZnO/ZnInO heterostructure nanowires growth

We investigated the self-catalytic role of indium oxide in the growth process of ZnO/ZnInO heterostructure nanowires on Si(111). The prepared nanowires had hexagonal cross sections and were tapered with tip diameters of 90 ± 5 nm and base diameters of 230 ± 5 nm. Energy dispersive X-ray and field emission Auger spectroscopies indicated that the grown nanowires were heterostructures of ZnO and ZnInO. Analysis of the early growth process revealed that indium may play a self-catalytic role. Therefore, the vapor-liquid-solid mechanism is likely to be responsible for growth of ZnO/ZnInO nanowires. X-ray diffraction and room temperature photoluminescence (PL) data demonstrated that the presence of indium results in a decrease in nanowires' crystallinity. These wires produced a large PL emission peak in the ultraviolet (UV) region and a smaller peak in the green region of the electromagnetic spectrum. The UV peak of the ZnO/ZnInO nanowires is blue-shifted with respect to that of pure ZnO nanowires.     

ZnO nanowire growth by electric current heating method: A study on the effect of substrate temperature

In this study, we report the growth of ZnO nanowire on quartz glass substrates with Au-catalyst assistance by electric current heating of ZnO ceramic bar. The effect of substrate temperature on the properties of ZnO nanostructures has been investigated systematically. Structural analysis indicates that the grown ZnO crystals belong to hexagonal phase with preferential growth along (0 0 2) orientation. Scanning electron microscopic studies reveal the aligned ZnO nanowires were grown at 800 °C. The typical length and diameter of nanowires are in the uniform ranges of 4–20 μm and 20–100 nm, respectively, showing their high aspect ratio of about 1000. We have made an attempt to discuss about the change in ZnO nanostructures with different substrate temperatures and the possible mechanism for the growth of nanowires. Optical reflectance studies show the infrared reflectivity was controlled through the substrate temperature.     

Electron field emission from the carbon-doped TiO2 nanotube arrays

The field-emission characteristics of the carbon-doped TiO₂ nanotube arrays (TNAs), which can be obtained by a heat treatment of the as-fabricated TNAs under a continuous argon and acetylene flux, were investigated. The morphology, crystalline structure, and composition of the as-grown specimens were characterized by the use of field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. It was found that the samples' turn-on electric field is reduced from 21.9 to 5.0 V/μm and the field-emission current density rapidly reaches about 9.0 mA/cm² at 11.8 V/μm after carbon doping. The dramatically improved field-emission characteristics would be mainly attributed to the reduced work function and the enhanced conductivity due to the carbon doping into TNAs.     

Growth and optical and field emission properties of flower-like ZnO nanostructures with hexagonal crown

Flower-like zinc oxide (ZnO) nanostructures with hexagonal crown were synthesized on a Si substrate by direct thermal evaporation of zinc power at a low temperature of 600 °C and atmospheric pressure. Field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman spectroscopy and photoluminescence were applied to study the structural characteristics and optical properties of the product. The result indicated that the flower-like product with many slender branches and hexagonal crowns at the ends were single-crystalline wurtzite structures and were preferentially oriented in the <001> direction. The photoluminescence spectrum demonstrated a strong UV emission band at about 386 nm and a green emission band at 516 nm. The field emission of the product showed a turn-on field of 3.0 V/µm at a current density of 0.1 μA/cm², while the emission current density reached about 1 mA/cm² at an applied field of 5.9 V/μm.     

Synthesis of ZnO flowers and their photoluminescence properties

Flower-like ZnO nano/microstructures have been synthesized by thermal treatment of Zn(NH₃)₄²⁺ precursor in aqueous solvent, using ammonia as the structure directing agent. A number of techniques, including X-ray diffraction (XRD), field emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), thermal analysis, and photoluminescence (PL) were used to characterize the obtained ZnO structures. The photoluminescence (PL) measurements indicated that the as-synthesized ZnO structures showed UV (∼375 nm), blue (∼465 nm), and yellow (∼585 nm) emission bands when they were excited by a He-Gd laser using 320 nm as the excitation source. Furthermore, it has been interestingly found that the intensity of light emission at ∼585 nm remarkably decreased when the obtained ZnO nanocrystals were annealed at 600 °C for 3 h in air. The reason might be the possible oxygen vacancies and interstitials in the sample decreased at high temperature.     

Super-low turn-on and threshold electric fields of plasma-treated partly Fe-filled carbon nanotube films

Field emission properties of partly Fe-filled carbon nanotubes (FCNTs) treated with different plasmas have been studied. Super low turn-on (0.24 V/μm) and threshold (0.6 V/μm) electric fields are identified upon nitrogen plasma treatment for 60 min. The field-enhancement factor, as high as 4.8 × 10⁴, can be attributed to the plasma-induced structural defects and the unique characteristics of thin walled FCNTs with filled Fe nanowires. A model has been proposed to understand the effects of plasma on the CNTs.     

Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst

ZnO nanowires were grown on Si (100) substrates with and without Au catalyst by chemical vapor deposition employing the vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms, respectively. The diameters of the resulting nanowires were in the range 80-150 nm with typical length about 10 μm. The near-band-edge (NBE) emission of ZnO nanowires grown with and without catalyst was observed at 382 nm and 386 nm, respectively. The intensity of the NBE emission of ZnO nanowires grown without the catalyst was higher than that of the green luminescence. By sharp contrast, the intensity of the NBE emission of ZnO nanowires grown with catalyst was lower than that of green luminescence. The X-ray diffraction (XRD) spectrum of the ZnO nanowires grown without catalyst exhibited a peak intensity of c-plane 5 times higher than that of m-plane and 10 times higher than that of a-plane. However, the XRD spectrum of the ZnO nanowires grown with catalyst exhibited a peak intensity of the c-plane about 1.5 times higher than that of the m-plane and 4 times higher than that of a-plane intensity. Thus, the ZnO nanowires grown without catalyst have a preferential orientation along the c-axis direction. Our results show that the catalyst strongly effects optical and structural properties of the ZnO nanowires.     

UNCD electron emitters using Si nanostructure as a template

The electron field emission (EFE) properties of silicon nanostructures (SiNSs) coated with ultra-nanocrystalline diamond (UNCD) were characterized. The SiNS, comprising cauliflower-like grainy structure and nanorods, was generated by reaction of a Si substrate with an Au film at 1000 °C, and used as templates to grow UNCD. The UNCD films were deposited by microwave plasma-enhanced chemical vapour deposition (MPECVD) using methane and argon as reaction gases. The UNCD films can be grown on the SiNS with or without ultrasonication pretreatment with diamond particles. The EFE properties of the SiNS were improved by adding an UNCD film. The turn-on field (E₀) decreased from 17.6 V/μm for the SiNS to 15.2 V/μm for the UNCD/SiNS, and the emission current density increased from 0.095 to 3.8 mA/cm² at an electric field of 40 V/μm. Ultrasonication pretreatments of SiNS with diamond particles varied the structure and EFE properties of the UNCD/SiNS. It is shown that the ultrasonication pretreatment degraded the field emission properties of the UNCD/SiNS in this study.