Patterned Growth of Graphene over Epitaxial Catalyst

Rectangle‐ and triangle‐shaped microscale graphene films are grown on epitaxial Co films deposited on single‐crystal MgO substrates with (001) and (111) planes, respectively. A thin film of Co or Ni metal is epitaxially deposited on a MgO substrate by sputtering while heating the substrate. Thermal decomposition of polystyrene over this epitaxial metal film in vacuum gives rectangular or triangular pit structures whose orientation and shape are strongly dependent on the crystallographic orientation of the MgO substrate. Raman mapping measurements indicate preferential formation of few‐layer graphene films inside these pits. The rectangular graphene films are transferred onto a SiO₂/Si substrate while maintaining the original shape and field‐effect transistors are fabricated using the transferred films. These findings on the formation of rectangular/triangular graphene give new insights on the formation mechanism of graphene and can be applied for more advanced/controlled graphene growth.     

Growth of epitaxial γ-Al2O3 films on rigid single-crystal ceramic substrates and flexible,single-crystal-like metallic substrates by pulsed laser deposition

Epitaxial γ-Al₂O₃ thin films were grown on diverse substrates using pulsed laser deposition. The high quality of epitaxial growth and cubic structure of γ-Al₂O₃ films was confirmed by X-ray diffraction. SrTiO₃ and MgO single crystal substrates were used to optimize the growth conditions for epitaxial γ-Al₂O₃ film. Under the optimized conditions, epitaxial γ-Al₂O₃ thin films were grown on flexible, single-crystal-like, metallic templates. These included untextured Hastelloy substrates with a biaxially textured MgO layer deposited using ion-beam-assisted-deposition and biaxially textured Ni-W metallic tapes with epitaxially grown and a biaxially textured, MgO buffer layer. These biaxially textured, γ-Al₂O₃ films on flexible, single-crystal-like substrates are promising for subsequent epitaxial growth of various complex oxide films used for electrical, magnetic and electronic device applications.     

Preparation of (001)-oriented Pb(Zr,Ti)O3 thin films and their piezoelectric applications

Preparation of (001)-oriented Pb(Zr,Ti)O(3) (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001) oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d(31), of -100 pm/V, and an extremely low relative dielectric constant, epsilon(r), of 240. The PZT thin films on Si substrate had a very high d(31) of -150 pm/V and an epsilon(r) = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.     

Preparation of (001)-oriented Pb(Zr,Ti)O/sub 3/ thin films and their piezoelectric applications

Preparation of (001)-oriented Pb(Zr,Ti)O₃ (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001)-oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d₃₁, of -100 pm/V, and an extremely low relative dielectric constant, epsiv_r, of 240. The PZT thin films on Si substrate had a very high d₃₁ of -150 pm/V and an epsiv_r = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.     

Long-range ordered single-crystal graphene on high-quality heteroepitaxial Ni thin films grown on MgO(111)

Large-area single crystal monolayer graphene is synthesized on Ni(111) thin films, which have flat terraces and no grain boundaries. The flat single-crystal Ni films are heteroepitaxially grown on MgO(111) substrates using a buffer layer technique. Low-energy electron diffraction and various spectroscopic methods reveal the long-range single crystallinity and uniform monolayer thickness of the graphene. When transferred onto an insulating wafer, continuous millimeter-scale single domain graphene is obtained.     

Compositionally graded Pb(Zr,Ti)O3 thin films with different crystallographic orientations

Compositionally graded ferroelectric PbZr_xTi_1−xO₃ (PZT) films were deposited using a sputtering method and crystallized in situ at 500 °C. The films showed purely (100) or (111) crystallographic orientation when grown on Si/SiO₂/TiO₂/Pt substrates, while they exhibited c-axis epitaxial microstructure when prepared on MgO/Pt substrates. Their crystallographic orientation was controlled owing to a thin TiO_x layer sputtered on substrates prior to PZT deposition. Analysis performed by Auger depth profile clearly confirmed the variation of composition in the films. Coercive fields from 80 kV/cm to 200 kV/cm and remnant polarization as large as 45 μC/cm² were obtained. However, no typical offset was observed on hysteresis loops, unlike previous works related to graded PZT films.     

Microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films on different bottom electrodes

The crystalline quality, dielectric and ferroelectricity of the Pb(Zr_0.52Ti_0.48)O₃ (PZT) films deposited on the LaNiO₃ (LNO), LNO/Pt and Pt bottom electrodes were comparatively analyzed to investigate the possibility for their application. LNO thin films were successfully prepared on Si (100) and Pt(111)/Ti/SiO₂/Si substrates by modified metallorganic decomposition (MOD). The PZT thin films were spin-coated onto the LNO, LNO/Pt and Pt bottom electrodes by sol–gel method. The crystallographic orientation and the microstructure of the resulting LNO films and PZT thin films on the different bottom electrodes were characterized by X-ray diffraction analysis. The dielectric and ferroelectric properties of PZT films on the different bottom electrodes are discussed. The PZT films deposited onto Pt/Ti/SiO₂/Si and LNO/Si substrates show strong (110) and (100) preferred orientation, respectively, while the films deposited onto LNO/Pt/Ti/SiO₂/Si substrates show the peaks of mixed orientations. PZT films on LNO and LNO/Pt bottom electrodes have larger dielectric constant and remnant polarizations compared with those grown on the Pt electrode.     

Thin film growth of epitaxial, polycrystalline and amorphous SrRuO3

The SrRuO₃ thin films were grown on amorphous fused silica and (100) single crystal LaAlO₃ substrates by pulsed laser deposition method. On fused silica substrates, polycrystalline SrRuO₃ thin film was obtained and below the crystallization temperature, SrRuO₃ thin films show an amorphous phase. For the case of epitaxial growth on (100) single crystal LaAlO₃ substrate, the crystallization temperature of SrRuO₃ thin film was increased by ∼ 100 °C indicating that additional energy is necessary in order to obtain the epitaxial thin film. By using the eclipse method and the control of substrate temperature, the variations of surface morphologies and grain size were observed by atomic force microscope. Below the crystallization temperature, amorphous SrRuO₃ thin film shows hopping transport property of an insulator.     

Epitaxial growth of CoFe2O4 on SrTiO3 (100) and MgO (100) substrates without buffer layer by laser molecular beam epitaxy technique

Among the family of ferrite materials, cobalt ferrite (CoFe₂O₄) is unique in that it has the highest values of magneto-crystalline anisotropy and magnetostriction. Recently, much of the efforts have been focused on the fabrication of single crystalline cobalt ferrite films. For the epitaxial growth of cobalt ferrite, the issues of lattice parameter and crystal symmetry mismatch with the substrate are of considerable importance. The growth of thin films of CoFe₂O₄ on MgO and SrTiO₃ single crystal substrates is reported in this paper. The key parameters on the growth modes were investigated by changing oxygen pressure and substrate temperature. Results show that the two-dimensional layer-by-layer growth mode only occurs under high oxygen pressure for epitaxy of Co ferrite. The significant observation presents the controllable lattice constant of a highly strained thin film by modulation of the substrate temperature. In this light, to grow high quality Co ferrite thin films on SrTiO₃ is of a considerable importance to modulate intrinsic magnetic properties.     

Growth and characterization of La5/8Sr3/8MnO3 thin films prepared by pulsed laser deposition on different substrates

Colossal magnetoresistance La_5/8Sr_3/8MnO₃ (LSMO) thin films were directly grown on MgO(100), Si(100) wafer and glass substrates by pulsed laser deposition technique. The films were characterized using X-ray diffraction (XRD), field emission-scanning electron microscope and atomic force microscopy (AFM). The electrical and magnetic properties of the films are studied. From the XRD patterns, the films are found to be polycrystalline single-phases. The surface appears porous and cauliflower-like morphology for all LSMO films. From AFM images, the LSMO films deposited on glass substrate were presented smooth morphologies of the top surfaces as comparing with the films were deposited on Si(100) and MgO(100). The highest magnetoresistance (MR) value obtained was ?17.21 % for LSMO/MgO film followed by ?15.65 % for LSMO/Si and ?14.60 % for LSMO/Cg films at 80 K in a 1T magnetic field. Phase transition temperature (T_P) is 224 K for LSMO/MgO, 200 K for LSMO/Si and above room temperature for films deposited on glass substrates. The films exhibit ferromagnetic transition at a temperature (T_C) around 363 K for LSMO/MgO, 307 K for LSMO/Si and 352 K for LSMO/Cg thin film. T_C such as 363 and 352 K are the high T_C that has ever been reported for LSMO films deposited on MgO substrate with high lattice mismatch parameter and glass substrates with amorphous nature.     

Thin-film PZT/SiC structure on silicon substrate: Formation,structural features,and dielectric properties

A new thin-film structure representing the Pt/PZT/SiC/Si system is obtained. The structure comprises a lead zirconate titanate Pb(Zr,Ti)O₃ (PZT) film deposited onto thin (90–100 nm) single crystal silicon carbide layers of 3C-SiC and 4H-SiC polytypes grown by a new solid-phase epitaxy on single crystal silicon substrates. Methods used for the formation of this multilayer structure are described, and its structural and dielectric characteristics are presented.     

Magnetic Resonance Studies of Half-Metallic Epitaxial CrO2 Thin Films Grown on Differently Oriented TiO2 Substrates

The results of structural and ferromagnetic resonance (FMR) investigations of epitaxial half- metallic chromium dioxide (CrO₂) thin films of thicknesses between 58?nm and 540?nm grown by chemical vapor deposition (CVD) on (100) and (110)-oriented TiO₂ single crystal substrates are presented. The angular dependences of the FMR spectra in different experimental geometries were obtained. Effective magnetic anisotropies of epitaxially grown CrO₂ films of different thicknesses on strain and strain-free surfaces of TiO₂ substrates were estimated. The results indicate that the magnetic behavior of the CrO₂ films results from a competition between the magnetocrystalline and strain anisotropies. It has been revealed that the strain anisotropy dominates in the films grown onto (100)-oriented TiO₂ substrates. On the contrary, the films grown onto (110)-oriented substrates demonstrate strain-free magnetic anisotropy behavior.     

The stability of thin tellurium and tellurium alloy films for optical data storage: II

The chemical and physical degradation and the effects of the substrate and a low surface energy subbing layer on the stability of thin tellurium and tellurium alloy films for optical data storage are reported. Chemically, thin tellurium films degrade mainly through the uniform oxidation of tellurium to TeO₂. In addition, localized degradation occurs at regions where initial defects on the substrate are present. Thin tellurium and tellurium alloy films can also degrade physically through crystal growth for an initially polycrystalline film and phase transformation for an initially amorphous film. While no significant difference in the uniform degradation rate is observed between films deposited onto poly(methyl methacrylate) (PMMA) and those deposited onto glass substrates, more localized degradation is detected for the films deposited onto PMMA substrates because of the higher initial defects of the substrate. The presence of a low surface energy subbing layer tends to degrade both the chemical and physical stability of these films. The degradation in the chemical stability is attributed to the change in the microstructure or thickness of the film due to the presence of the low surface energy subbing layer.     

Effects of bottom electrodes on dielectric properties of epitaxial 2% Mn doped Ba(Zr<Subscript>0.2</Subscript>Ti<Subscript>0.8</Subscript>)O<Subscript>3</Subscript> thin films

2 mol% Mn doped Ba(Zr_0.2Ti_0.8)O₃ (Mn-BZT) thin films were prepared by pulsed laser deposition (PLD) on single crystal oxide substrates LaAlO₃(001) and MgO(001), with conductive oxide bottom electrodes LaNiO₃ and SrRuO₃, respectively. Both the Mn-BZT films and the bottom electrode films could be c-axial oriented with a cube-on-cube arrangement on the corresponding substrates. The dielectric properties measured with parallel plate capacitor configurations of Au/Mn-BZT/LNO and Au/Mn-BZT/SRO revealed that the Mn-BZT film on LNO bottom electrode exhibited comparatively higher dielectric constant, larger dielectric tunability and lower dielectric loss than that on SRO. It could be mainly attributed to the better epitaxial growth characteristics and mismatch stress of Mn-BZT thin film on LNO, as well as less misfit dislocation and the better morphology of LNO bottom electrode.     

Raman spectroscopic and X-ray diffraction investigations of epitaxial BiCrO3 thin films

Epitaxial BiCrO₃ thin films were grown onto NdGaO₃ (110)- and (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7 (100)-oriented substrates by pulsed laser deposition. High resolution X-ray diffraction and pole figure measurements were performed in order to obtain information about the crystal structure of the films, about their quality and about the mutual crystallographic orientation between the films and the substrates. The monoclinic (111) plane of BiCrO₃ was found out to be parallel to the substrate surface. The epitaxial relation between films and substrates was verified by using polarisation dependent Raman spectroscopic experiments and theoretical calculations based on symmetry.     

Formation of semitransparent CuAlSe2 thin films grown on transparent conducting oxide substrates by selenization

Wide band-gap semiconductors have been studied for applications as buffer layers in thin film solar cells and as top cell in tandem devices. CuAlSe₂ (CAS) thin films were deposited onto bare and two different transparent conducting oxide (TCO)-coated glass substrates, In₂O₃:Sn (ITO) and ZnO:Al (AZO), by a two stage process consisting on the selenization of metallic precursor layers. Homogeneous and crystalline formation of CAS thin films is not trivial and it is strongly influenced by selenization conditions, type of substrate and the film thicknesses. Under certain conditions, polycrystalline CuAlSe₂ thin films with chalcopyrite structure and preferential orientation along the (112) plane were obtained onto bare glass susbtrates. However, formation and crystallization of homogeneous CAS thin films was promoted by transparent conducting oxides (ITO and AZO)-coated glass substrates and take place in a wide range of thicknesses and Se amounts with high degree of reproducibility. TCO-coated substrates promoted larger grains when the CAS compound was formed. The band-gap energy, preferential orientation, crystallite size and the average surface roughness varied depending on the film thickness and type of substrate.     

Interfacial mechanisms controlling phase formation in sol-gel derived lead zirconate titanate thin films

An RBS study has been carried out to study the relative extent of Pb diffusion in the substrate from PZT films. It is found that extensive diffusion of Pb occurs into the quartz substrate making the film severely deficient in Pb. No such diffusion occurs in the case of PZT films on sapphire and the concentration of Pb is near stoichiometric, except for a small loss due to volatilization. Excessive Pb deficiency, rather than any epitaxial effect, has earlier been proposed by us to be the crucial factor responsible for the existence of the pyrochlore phase in PZT thin films on substrates such as Si, glass, quartz etc. The present results confirm this. The effects of other process variables such as thickness and chemical composition (Zr/Ti ratio) of the film can also be understood in terms of the same phenomenon.     

Optical rib waveguide based on epitaxial Ba0.7Sr0.3TiO3 thin film grown on MgO

Barium strontium titanate (Ba_0.7Sr_0.3TiO₃, abbreviated as BST) thin films were grown on MgO (001) single crystal substrates using pulsed laser deposition. A heteroepitaxial growth relationship of <001> _BST // <001> _MgO was confirmed by X-ray diffraction. The bidimensional structure of a rib waveguide was designed using the effective index method. A BST/MgO rib waveguide was fabricated using photolithography and reactive ion etching techniques. A single-mode near-field output pattern was observed using an end-fire coupling method at a wavelength of 1550 nm, which is consistent with our numerical calculation.     

Fabrication of epitaxial conductive LaNiO3 films on different substrates by pulsed laser ablation

LaNiO₃ (LNO) thin films were deposited on (1 0 0) MgO, SrTiO₃ (STO) and LaAlO₃ (LAO) crystal substrates by pulsed laser deposition (PLD) under 20 Pa oxygen pressure at different substrate temperatures from 450 to 750 °C. X-ray diffraction (XRD), ex situ reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) were employed to characterize the crystal structure of LNO films. LNO films deposited on STO and LAO at a temperature range from 450 to 700 °C exhibit high (0 0 l) orientation. XRD ψ scans and RHEED observations indicate that LNO films could be epitaxially grown on these two substrates with cubic-on-cubic arrangement at a wide temperature range. LNO films deposited at 700 °C on MgO (1 0 0) substrate have the (l l 0) orientation, which was identified to be bicrystalline epitaxial growth. La₂NiO₄ phase appears in LNO films deposited at 750 °C on three substrates. The epitaxial LNO films were tested to be good metallic conductive layers by four-probe method.     

Single-crystal heteroepitaxial growth of PbxSn1−xTe films on germanium substrates by r.f. sputtering

Single-crystal heteroepitaxial growth of Pb_xSn_1?xTe films was achieved by r.f. sputtering deposition onto single crystals of germanium (both 〈100〉 and 〈111〉 orientations), although there is a large mismatch (～12%) in the lattice parameters between the grown film and the substrate.The structures of the r.f. sputtered films were investigated by high energy electron diffraction microscopy, electron surface replicas and scanning electron microscopy.Differences in the substrate temperature needed for the epitaxial growth on 〈100〉 or 〈111〉 orientations are attributed to the tendency of Pb_xSn_1?xTe films to grow parallel to the (100) plane, which is the cleavage plane of the NaCl structure. This causes a mixed (100)-oriented phase in addition to the (111) orientation expected from the symmetry of the substrate surface in the case of (111) germanium substrates.Examples of the effects on the heterogeneous nucleation of the substrate temperature and deposition rate are shown for both orientations.The first stages of growth (initial reactions with the substrates) and the thickness and concentration profiles were investigated by ion beam backscattering analysis.Channelling techniques confirmed the high degree of order in the single- crystal structure of films deposited on large areas (～1 cm²).