低碳冲压钢板静态再结晶行为的研究

利用背散射电子衍射(EBSD)技术和X射线衍射(XRD)对SPCD冷轧钢板缓慢升温退火工艺下的再结晶取向特征、织构的形成规律及与形变织构的关系进行研究,并与快速加热退火工艺下的IF钢再结晶取向特点进行对比。结果表明:宏观织构显示冷轧态下{111}〈112〉形变织构稳定存在,随后的再结晶过程中γ线上存在{111}〈112〉与{111}〈110〉织构的竞争,其中再结晶初期{111}〈112〉织构占主导,后期{111}〈110〉吞食{112}〈110〉和{001}〈110〉织构进而取代{111}〈112〉作为γ线织构的主导取向;不同取向新晶粒具有不同的再结晶形核地点:{111}〈110〉新晶粒主要在{112}〈110〉和{111}〈112〉形变晶粒的晶界处形核;{111}〈112〉新晶粒主要在相同取向的形变晶粒内形核;而{110}〈001〉新晶粒主要在{111}〈112〉形变晶粒的形变带内形核。     

冷轧无取向硅钢再结晶退火过程的EBSD分析

采用EBSD手段分析了低碳低硅（0.003%C、0.3%Si）冷轧硅钢试样在740℃加热保温6s～360s退火过程中微区取向的演变规律。结果表明：{111}〈110〉取向的再结晶晶粒在变形的{111}〈112〉取向晶粒的晶界处形核,同时{111}〈112〉取向的再结晶晶粒在变形的{111}〈110〉取向晶粒的晶界处形核,并在{111}〈112〉取向冷轧剪切带上形成{011}〈100〉取向再结晶晶粒。在一定的退火温度下,合理控制保温时间有利于提高{100}面织构的占有率。     

低碳冲压钢板静态再结晶行为的研究

利用背散射电子衍射(EBSD)技术和X射线衍射(XRD)对SPCD冷轧钢板缓慢升温退火工艺下的再结晶取向特征、织构的形成规律及与形变织构的关系进行研究,并与快速加热退火工艺下的IF钢再结晶取向特点进行对比.结果表明:宏观织构显示冷轧态下{111}〈112〉形变织构稳定存在,随后的再结晶过程中γ线上存在{111}〈112...     

稀土CSP低碳钢薄板退火过程中组织演变及微区取向研究

利用金相显微镜和背散射电子衍射（EBSD）技术研究了稀土对CSP低碳钢冷轧薄板退火过程中组织和织构的影响。试验结果表明：稀土CSP低碳钢冷轧板在罩式退火过程中加热到580℃时开始发生再结晶,经过680℃保温9 h,形成均匀的饼型晶粒;稀土的加入促进{111}〈110〉和{111}〈112〉晶粒的生长,增加了{111}有利织构的强度。     

超高纯Al-0.5%Cu合金溅射靶材微观组织与织构的EBSD分析

用EBSD技术对超高纯（99.9995%以上）Al-0.5%Cu合金靶材冷轧及退火过程中的微观组织、织构及取向差进行了表征,分析了合金靶材多向冷轧、退火过程中微观组织、织构及取向差等的演变规律。     

冷轧铝板微织构演变的原位加热电子背散射衍射分析

采用原位加热电子背散射衍射(EBSD)技术,对冷轧铝板在回复和再结晶转变过程中的微织构演变规律进行了动态研究。轧制态铝板以铜型织构{112}〈111〉为主。再结晶转变后,以立方织构{001}〈100〉和R织构{124}〈211〉为主。在回复和再结晶过程中,{001}〈100〉晶粒和{124}〈211〉晶粒优先在形变带边缘形成和长大。晶粒长大通过晶界迁移并吞噬周围晶粒而得以发展。本研究对于理解轧制铝板的再结晶过程和机制,并有效控制轧制铝板的织构具有重要的参考价值。     

挤压态Mg-Gd-Zr合金在退火过程中的晶粒长大和织构演变

研究了Mg-Gd-Zr挤压态合金在450℃和500℃退火过程中的晶粒生长和织构演变。结果表明:Mg-Gd-Zr挤压态合金在退火过程中晶粒正常长大,在500℃退火比在450℃退火时晶粒长大的速度快得多。Mg-Gd-Zr合金挤压后形成了〈0001〉//ED、〈1010〉//ED和〈1120〉//ED三种织构。Mg-Gd-Zr挤压合金在450℃退火,退火时间从20~60 min,〈0001〉//ED织构的强度逐渐增加。Mg-Gd-Zr合金在500℃退火时,〈0001〉//ED织构的强度在退火20 min即达到最大值,在随后的退火过程中逐渐减弱,〈1120〉//ED织构在退火过程中得到了很大程度的增强。     

Ti-25 Nb-25 Ta合金拉伸变形过程中｛332｝〈113〉变形孪晶的EBSD研究

本文利用EBSD技术对亚稳β型Ti?25Nb?25Ta合金室温拉伸变形过程中｛332｝〈113〉变形孪晶的演变趋势及交叉现象进行了研究。结果表明：随着变形量的增大，孪晶宽度不断增加，孪晶形态由变形初期的平直细条带状逐渐变为宽窄不一的条带状，至变形末期部分孪晶呈破碎状，孪晶界严重扭曲变形。多数晶粒内产生两种以上｛332｝〈113〉孪晶变体，部分孪晶能穿越晶界继续生长，某些初次孪晶内部有二次｛332｝〈113〉孪晶产生。不同变体孪晶间易发生交叉现象。不同｛332｝〈113〉孪晶变体的交叉作用导致交叉区域出现较大的局部晶格畸变，晶格畸变主要集中于孪晶内部，且交叉界面处的晶格畸变程度最为严重。交叉作用的结果是交叉区域的晶体相对于不同孪晶变体和基体的取向都发生一定程度的改变。     

高硅钢温轧过程压下率及中间退火对组织、织构的影响

传统轧制法制备6．5wt．％高硅钢过程中温轧工艺具有显著不同于3wt．％Si的电工钢的特点及组织织构特征,是开发新型基于织构优化的高硅钢的关键环节。采用EBSD技术对通过热轧、温轧、冷轧及退火工艺制备0．3mm厚的6．5wt．％Si电工钢板的组织和织构进行分析,重点研究温轧过程中的中间退火和大、小压下率组合以控制织构。结果表明,在热轧退火板是部分再结晶组织的情况下,一次性温轧或先小形变量、中间退火后再大形变量的工艺可得到更多的Goss晶粒;经过最终退火后Goss取向会发生偏转,形成部分黄铜取向,而{111}（112）取向的晶粒内形核生成近Goss取向的再结晶晶粒;大压下量轧制是最终组织中{111}取向晶粒较多的主要原因。     

7B04铝合金板沿厚度方向显微组织、织构及力学性能的研究

本文通过扫描电镜(SEM)及常规力学性能试验对7B04铝合金板沿厚度方向的显微组织、织构及力学性能进行了详细的研究,结果显示:样品芯部及表层晶粒都沿轧制方向拉长,芯部基本未发生再结晶,小角度晶界的含量随着离芯部距离的增加而减少,再结晶程度逐渐加强;未回溶相S(Al2CuMg)、Al7Cu2Fe、Al18Cr2Mg3在芯部及表层尺寸无明显差别;芯部织构主要为铜织构copper{112}〈111〉、黄铜织构Brass{110}〈112〉(B)、S织构{123}〈634〉、{241}〈112〉,{113}〈332〉及{231}〈124〉,表层织构出现旋转立方织构r-cube{100}〈011〉及{111}〈110〉织构,且随芯部到表层织构在基体中的整体体积含量减少。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first