Te纳米线模板法加工Bi_2Te_3-Te片式棒热电材料(英文)

以碲纳米线为模板,采用简便的回流法大规模合成了Bi2Te3-Te片式棒一维材料,产量达到90%.利用X射线衍射、扫描电镜、X射线能谱、透射电镜对样品进行了分析.系统的研究了KOH、EDTA以及反应时间对产物结构的影响,提出了这种异质结构的形成机制.本制备方法可以推广到合成其它金属和半导体的一维特殊纳米结构.     

Bi_2Te_3/Bi_2Se_3纳米复合热电材料的制备和性能

通过水热法分别合成了Bi2Te3和Bi2Se3纳米粉末,粉末按目标产物Bi2Te2.85Se0.15混合后真空热压烧结(523～623K,50或80MPa)制成块体材料。用X射线衍射(XRD)、扫描电镜(SEM)和场发射扫描电镜对合成的粉末和块体进行了分析,对块体在室温附近的载流子浓度、迁移率、霍尔系数、以及298～598K温度区间的电导率和Seebeck系数进行了测试。在623K,80MPa,保温60min真空热压烧结得到的样品的功率因子在298K达到了峰值19.1μWcm-1K-2。探讨了烧结温度和压力对材料相结构和形貌的影响。     

快速急冷法对β-Zn_(4+x)Sb_3材料热电及力学性能的影响

β-Zn4Sb3是一种重要的中温热电材料,但其较差的力学强度和可加工性限制了其实际应用.本文采用熔体旋甩法结合放电等离子烧结技术快速制备了一系列具有高热电性能和高力学强度的β-Zn4+xSb3块体材料.通过调节Zn的含量,优化了其热电性能,随着Zn含量的增加,电导率增大,Seebeck系数有所下降,热导率增加.在700K时,Zn4.32Sb3样品的ZT值达到1.13,相比熔融法制备的样品提高了约40%.该制备方法所得到的样品具有极高的抗压强度,与熔融法制备的样品相比较,所有样品的抗压强度均提高了一倍以上,这种高热电性能和高力学强度的β-Zn4+xSb3块体材料具有很好的应用前景.     

In掺杂β-Zn_4Sb_3热电材料的制备与电热输运

设计了一系列名义组成为Zn4Sb3-xInx(0~0.08,Δx=0.02)的In掺杂β-Zn4Sb3基块体材料,并用真空熔融-随炉冷却-放电等离子体烧结工艺成功制备出无裂纹的In掺杂单相β-Zn4Sb3基块体材料.300~700K内材料的电热输运特性表明,In杂质对Zn4Sb3化合物的Sb位掺杂可导致载流子浓度和电导率大幅度增大、高温下本征激发几乎消失和晶格热导率显著降低,x=0.04和0.08的Zn4Sb3-xInx的In掺杂β-Zn4Sb3化合物700K时晶格热导率均仅为0.21W/(m·K).与纯β-Zn4Sb3块体材料相比,所有In掺杂β-Zn4Sb3基块体材料的ZT值均显著增大,x=0.06的Zn4Sb3-xInx的In掺杂β-Zn4Sb3基块体材料700K时ZT值达到1.13,提高了69%.     

Bi_2Te_3纳米粉末的直流电弧等离子体合成

以单质Bi,Te粉末为原材料,采用直流电弧等离子体蒸发法制备了Bi2Te3纳米粉末。通过XRD,EDS,TEM和SAED分析方法对Bi2Te3粉末的物相结构、成分和形貌进行了表征。Bi2Te3纳米粉末的平均粒径约为35 nm,粉末呈不规则的多面体结构,还有一些薄片状和棒状的结构,这与Bi2Te3半导体化合物的高度各向异性是一致的。研究了电弧电流和氩气压力对合成Bi2Te3纳米粉末的粒径和产率的影响,随着电弧电流或氩气气压的增加,粉末的粒径和产率都逐渐增大,但产率的增加并不明显。     

稀土Gd对热压烧结Bi_2Te_3基材料热电性能的影响

稀土元素对Bi2Te3基材料热电性能的影响一直是Bi2Te3基热电材料研究的热点。本文研究了不同Gd掺杂量Bi2Te3基热电材料的热压烧结工艺参数,运用XRD,SEM方法对材料的物相成分和形貌进行了表征,研究了20MPa下不同Gd掺杂对Bi2Te3基材料的载流子浓度、电导率、Seebeck系数的影响。研究结果表明,Gd掺杂没有明显改变Bi2Te3基材料的晶体结构,适量的Gd掺杂有利于减小载流子浓度、提高Bi2Te3基材料的热电性能。     

表面活性剂对水热合成Bi2Te3纳米结构形貌的影响

以Bi(NO3)3·5H2O和TeO2为原料,KBH4为还原剂并外加适量表面活性剂,在180℃保温48h水热合成出Bi2Te3纳米粉末.采用X射线衍射分析了产物的相结构和成分.采用透射电镜观察了产物的形貌,结合产物的形貌与表面活性剂的特性讨论了不同表面活性剂对水热合成Bi2Te3形貌的影响,分析了不同纳米结构的形成机制.     

AgSbTe_2热电化合物的超声化学法合成

采用超声化学法结合还原热处理合成了单相的AgSbTe2粉体,并结合放电等离子烧结(SPS)制备了相应的块体.系统研究了不同前驱体制备条件、热处理温度、时间和起始化学计量比对相组成的影响,并对烧结块体的热电性能进行了初步研究.结果表明:超声化学法合成的前驱体在500℃、2h还原热处理后可以得到近单相的AgSbTe2,且通过调节起始原料的摩尔比可以得到单相的AgSbTe2.所得粉体颗粒平均粒径约为10μm,表面均匀分布着20~50nm的纳米颗粒.性能测试表明单相样品的无量纲热电优值ZT值在570K最大可达1.14.     

SPS法制备Bi_2Te_3基热电合金的热电性能

用粉末冶金工艺结合SPS烧结制备了p型(Bi0.2Sb0.8)2Te3和n型Bi2(Te0.975Se0.025)3多晶半导体合金,研究烧结工艺对其热电性能的影响.结果表明,室温下,p型(Bi0.2Sb0.8)2Te3材料的热电优值Z为3.25×10<'-3K<'-1,n型Bi2(Te0.975Se0.025)3材料的热电优值Z为2.21×10<'-3K<'-1.     

钌掺杂对氧化锡纳米线的光学和气敏性能的影响

采用热蒸发气相沉积法,以Au为催化剂制备了Ru掺杂SnO₂(SnO₂∶Ru)纳米线。研究了SnO₂∶Ru纳米线的晶体结构、微观形貌、光学特性和气敏性能。结果显示,纳米线具有完整的金红石结构,且表面平整。SnO₂∶Ru纳米线由O、Sn和Ru构成,它们的原子分数分别为62.60%、36.49%、0.91%。Ru掺杂引入施主型杂质能级导致SnO₂纳米线禁带宽度变窄,紫外波段的吸收系数明显增加,对丙酮、乙醇、乙二醇的气敏响应明显高于纯SnO₂纳米线,对丙酮的响应灵敏度最强。SnO₂∶Ru纳米线的最佳工作温度为210 ℃,对丙酮的响应/恢复时间短,理论探测极限为927×10-9,适合丙酮等挥发性有害气体的检测。     

Phase transition behaviors and thermal conductivity measurements of nitrogen-doped Sb2Te3 thin films

Crystallization temperature of nitrogen-doped Sb₂Te₃ (ST) thin films increased with increasing nitrogen doping concentration, which indicates that the long-term stability of the metastable amorphous state can be improved by nitrogen doping. The root-mean-square (rms) roughness values of the films showed a significant decrease with nitrogen doping. Thermal conductivity of nitrogen-doped ST thin films was measured using a transient thermoreflectance (TTR) technique. It was found that the thermal conductivity decreased with increasing nitrogen doping concentration and increased with increasing annealing temperature. Nitrogen-doped ST thin films are suitable phase-change materials for low programming power consumption applications of phase-change random access memory (PCRAM).     

AC conductivity and dielectric properties of Sb2Te3 thin films

Sb₂Te₃ films of different thicknesses, in the thickness range 300-620 nm, were prepared by thermal evaporation. X-ray analysis showed that the as-deposited Sb₂Te₃ films are amorphous while the source powder and annealed films showed a polycrystalline nature. The AC conductivity and dielectric properties of Sb₂Te₃ films have been investigated in the frequency range 0.4-100 kHz and temperature range 303-373 K. The AC conductivity σ_AC(ω) was found to obey the power law ω^s where s?1 independent of film thickness. The temperature dependence of both AC conductivity and the exponent s can be reasonably well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε₁ and the dielectric loss ε₂ are frequency and temperature dependent and thickness independent. The maximum barrier height W_M calculated from dielectric measurements according to the Guintini equation agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The effect of annealing at different temperatures on the AC conductivity and dielectric properties was also investigated. Values of σ_AC, ε₁ and ε₂ were found to increase with annealing treatment due to the increase of the degree of ordering of the investigated films. The Cole-Cole plots for the as-deposited and annealed Sb₂Te₃ films have been used to determined the molecular relaxation time τ. The temperature dependence of τ indicates a thermally activated process.     

Crystallization behavior and thermoelectric characteristics of the electrodeposited Sb2Te3 thin films

Crystallization behavior of the electrodeposited Sb₂Te₃ film was characterized and the effect of the amorphous-crystalline transition on the Seebeck coefficient was evaluated. The as-electrodeposited Sb₂Te₃ film was amorphous and exhibited the Seebeck coefficient of 268-322 μV/K, which was much larger than the value of the crystalline Sb₂Te₃ film. When annealed at temperatures above 100 °C, the Seebeck coefficient of the Sb₂Te₃ film dropped significantly to 78-107 μV/K due to the amorphous-crystalline transition at 94 °C. The thermal stability of the electrodeposited Sb₂Te₃ film was improved by the addition of Cu, and the crystallization temperature of the CuSbTe film increased up to 149.5 °C.     

Selective synthesis of Bi2Se3 nanostructures by solvothermal reaction

Bi₂Se₃ nanobelts, nanoflakes and sheets embedded nanotubes were prepared via solvothermal process with different solvents. The reaction conditions influencing the synthesis of Bi₂Se₃ nanostructures such as solvents, and reaction temperatures were studied and optimized. Results indicated that the mixed solvent composed of triethanolamine and ethanol (TEA-EtOH) or triethanolamine and distilled water (TEA-H₂O) can decrease the threshold temperature (TT) of Bi₂Se₃. With the solvents TEA-EtOH and TEA-H₂O, we originally accomplished the shape-controlled synthesis of Bi₂Se₃ nanocrystals by controlling reaction temperature. Based on the viewpoint of crystallography about Bi₂Se₃, the possible growth mechanisms of Bi₂Se₃ nanostructures were discussed.     

多元醇法制备和表征Sb2Se3纳米线

以自制的NaHSe乙醇溶液为硒源,在PEG-400无水体系中采用多元醇法,在180℃生长10h制备了直径100～200nm,长度可达十几微米的纳米线.产物通过XRD、TEM、HRTEM、FESEM、EDS和UV-Vis等手段进行了表征,并研究了不同多元醇对产物形貌的影响.研究表明,PEG-400作为结构导向剂在制备一维Sb2Se3纳米线中发挥着至关重要的作用,并且无水环境为纳米晶的生长提供了更加纯净的条件,有利于制备高质量的纳米晶.     

Preparation of rod-like Sb2S3 dendrites processed in conventional hydrothermal

Large-scale rod-like antimony sulfide (Sb₂S₃) dendrites have been prepared by hydrothermal method using antimony chloride (SbCl₃), citric acid and thioacetamide as raw materials at 160 °C for 12 h. The powder X-ray diffraction pattern shows the Sb₂S₃ crystals belong to the orthorhombic phase with calculated lattice parameters a = 1.120 nm, b = 1.128 nm and c = 0.3830 nm. The quantification of energy dispersive X-ray spectrometry analysis peaks gives an atomic ratio of 2:3 for Sb:S. Transmission electron microscopy micrograph studies reveal the appearance of the as-prepared Sb₂S₃ is dendrites-like which is composed of nanorods with the typical width of 300-500 nm and length of 5-20 µm. Finally the influences of the reaction conditions are discussed and a possible mechanism for the formation of rod-like Sb₂S₃ dendrites is proposed.     

Hydrothermal synthesis of single-crystalline Bi2Te3 nanoplates

Novel Bi₂Te₃ nanoplates with about 0.2-1 μm in diagonal and 100 nm in thickness have been facilely synthesized via hydrothermal routes in the presence of polyvinylpyrrolidone (PVP). Various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and Fourier transform infrared spectrometry (FT-IR) have been used to characterize the obtained products. The results show that the existence of PVP is vital to the formation of the plate-like morphology. Other factors, such as the reaction temperature and the different surfactants also have influence on the morphology of the final products to some extent.     

超声化学结合放电等离子烧结制备In4Se3化合物的热电性能研究

采用超声化学和后续还原热处理工艺合成了单相In4Se3化合物粉体,并结合放电等离子烧结技术(SPS)制备了致密的块体材料.对所得的块体材料的微结构和热电传输性能进行了系统研究.结果表明,块体样品的晶粒细小、排列紧密并存在显著的择优取向,同时样品中存在大量精细的层状结构,这使得块体样品的电热传输性能也表现出明显的各向异性.由于具有较高的Seebeck系数和较低的热导率,沿着SPS压力方向上样品表现出较好的热电性能,其最大ZT值在700 K可达到0.56,这与其它物理技术制备的In4Se3多晶材料的性能相当.