Fabrication of Yb-doped Lu2O3-Y2O3-La2O3 solid solutions transparent ceramics by self-propagating high-temperature synthesis and vacuum sintering

A comparative analysis of sintering and grain growth processes of lutetium oxide and lutetium-yttrium-lanthanum oxides solid solutions, as well as optical properties, luminescence and laser generation of (Lu_xY_0.9-xLa_0.05Yb_0.05)₂O₃ transparent ceramics are reported. Fabrication of highly dispersed initial powders of these compounds was performed via nitrate-glycine self-propagating high-temperature synthesis (SHS) method. The powders were compacted at 300?MPa and vacuum sintered at temperatures up to 1750?°С. Optical ceramics of (Lu_0.65Y_0.25La_0.05Yb_0.05)₂O₃ elemental composition were shown to have the highest in-line transmittance, which achieved 78% at the wavelength of 800?nm. Generation of laser radiation at a wavelength of 1032?nm with the differential efficiency of 20% was demonstrated in the (Lu_0.65Y_0.25La_0.05Yb_0.05)₂O₃ ceramics.     

Low-temperature reaction-sintering of mullite ceramics with an Y2O3 addition

Mullite ceramics were fabricated at relatively low temperatures from powder mixtures of -Al₂O₃ and quartz, with an Y₂O₃ addition. The mullitization process was analyzed by X-ray diffraction. The densification behavior was investigated as a function of the Y₂O₃ content, sintering temperature and holding time as well as mullite seeds. It has been shown that mullitization occurs via a nucleation and growth mechanism within an yttrious aluminosilicate glass, but lattice and grain-boundary diffusion becomes important during the densification process. Moreover, the incorporation of mullite seeds was observed to enhance both mullitization and densification. At 1400°C for 5 h or 1450°C for 2 h, 15 mol% Y₂O₃-doped and 5 mol% mullite-seeded specimens can be sintered to almost full density.     

Effect of Y2O3 additive on conventional and microwave sintering of mullite

Mullite has become a strong candidate material for advanced structural and functional ceramics. Much interest has recently focused on sintering aids for mullite. The aim of this study was to evaluate the effect of Y₂O₃ as a sintering aid in the conventional and microwave sintering of mullite. To accomplish this study, a highly pure industrial mullite was used. Mullite with and without Y₂O₃ was pressed under a cold isostatic pressure of 200 MPa. Samples were sintered conventionally at 1400, 1450, 1500, 1550 and 1600 °C for 2 h and microwave-sintered for up to 40 min using a large range of power. The microstructure and physical properties of the microwave-sintered samples were compared to those of the conventionally sintered samples. The results showed that Y₂O₃ improved the densification of mullite bodies in the conventional and microwave sintering processes, but high densifications were achieved in just a few minutes when Y₂O₃ was used with microwave processing.     

Microstructural and electrical behavior of Bi4V2−xCuxO11−δ (0 ≤ x ≤ 0.4)

Cation substituted bismuth vanadate possesses high oxygen ion conductivity at lower temperatures. The ionic conductivity of this material at 300 °C is 50–100 times more than any other solid electrolyte. Three phases (α, β, γ) are observed in the substituted compound; α and γ are low and high conducting phase, respectively. Samples of Bi₄V_2−xCu_xO_11−δ (x = 0–0.4) were prepared by solid-state reaction technique. Impedance spectroscopy measurements were carried out in the frequency range of 100 Hz to 100 kHz using gold sputtered cylindrical shaped pellets to obtain bulk ionic conductivities as a function of the substitution and temperature. The change of slopes observed in the Arrhenius plots is in agreement with the phase transitions for all the compositions. The highest ionic conductivity of the Cu-substituted compound was observed in Bi₄V_1.8Cu_0.2O_11−δ which is attributed to its lower activation energy. Microstructural studies indicated the stabilization of high temperature γ-phase at low temperature in those samples whose ionic conductivity observed was higher.     

Synthesis of Ba2TiOSi2O7 and Ba2TiOSi1.8Ge0.2O7 ferroelectric ceramics and the structure determination by Rietveld analysis

Polycrystalline ceramic samples of pure fresnoite compound of formula Ba₂TiOSi₂O₇ and germanium (Ge⁴⁺) doped compound Ba₂TiOSi_1.8Ge_0.2O₇ have been prepared by standard solid state reaction technique using high purity oxides and carbonates. The pure compound of fresnoite was sintered at 1300 °C while the Ge⁴⁺ substituted compound was sintered into pellet form at 1180 °C. The formation of the single phase compound was confirmed by X-ray diffraction (XRD) and the structural parameters were refined by the Rietveld analysis. A good agreement between observed and calculated X-ray diffraction pattern was obtained from the Rietveld refinement using noncentrosymmetric space group P4bm. The bond distances along with bond angles between atoms for both the compounds as well as the position of the atoms in the unit cell were calculated which supports the structural results. The grain size of both the compounds was investigated from SEM micrographs. The results are discussed in detail.     

Investigation on the origin of the giant dielectric constant in CaCu3Ti4O12 ceramics through analyzing CaCu3Ti4O12-HfO2 composites

A full range of CaCu₃Ti₄O₁₂-HfO₂ (CCTO-HfO₂) composites were prepared by sintering mixtures of the two components at 1000 °C for 10 h. X-ray diffraction studies confirmed the two-phase nature of the composites. The evolution of the microstructure in the composites, in particular, the size distribution of CCTO grains, was examined by scanning electron microscopy. The studies showed that, as more HfO₂ was added, the abnormal grain growth of CCTO and coarsening of the microstructure were gradually suppressed. As a result, the average CCTO grain size was reduced from 50 to 1 μm. The measured dielectric constants agree well with the values calculated from Lichtenecker's logarithmic law, using only the dielectric constants of pure CCTO and HfO₂ as two end points. The agreement suggests to us that the dielectric constant of CCTO is dominated by domain boundaries within the grains rather than by grain boundaries between the grains.     

Microstructural control of ultrafine and nanocrystalline WC-12Co-VC/Cr3C2 mixture by spark plasma sintering

The aim of this present work is to study the effect of VC and/or Cr₃C₂ in densification, microstructural control and mechanical behaviour of WC-12Co ultrafine and nanocrystalline mixtures, consolidated by spark plasma sintering at 1100 °C, applying a pressure of 80 MPa in combination with a heating rate of 100 °C min⁻¹. Nanocrystalline and ultrafine mixtures with an average size of 30 nm and 100-250 nm, respectively, with the addition of 1 and 0.5 wt.% of VC/Cr₃C₂ grain growth inhibitors, respectively, were investigated. The density, microstructure, hardness and fracture toughness of the consolidated samples were measured and observed. The addition of VC inhibitor allows an excellent grain growth control keeping microstructures with an average grain size of 154 nm. The hardness values and fracture toughness obtained were about 2000 HV₃₀ and above 10 MPa m^1/2, respectively.     

Fabrication of YAG transparent ceramics by two-step sintering

Yttrium aluminum garnet (YAG) nanopowders with mean particle size of about 50 nm synthesized by a modified co-precipitation method were used to sinter bulk YAG ceramic by two-step sintering method. Full densification was achieved by heating the sample up to 1800 °C followed by holding at 1550 °C for 10 h. Transparent YAG ceramics were obtained by suppressing grain-boundary migration while promoting grain-boundary diffusion during the two-step sintering process. The microstructure of the YAG ceramic is homogeneous without abnormal grain growth and the transmittance of the sintered sample is 43%.     

Influence of α-Al2O3 addition on sintering and grain growth behaviour of 8 mol% Y2O3-stabilised cubic zirconia (c-ZrO2)

The effect of α-Al₂O₃ addition on sintering and grain growth behaviour of high purity 8 mol% yttria-stabilised cubic zirconia (c-ZrO₂) was investigated. For these purposes, 1 wt.% α-Al₂O₃ was selected as a dopant in c-ZrO₂. The slip-cast specimens were sintered at different temperatures between 1150 and 1400 °C. It was seen that doped c-ZrO₂ had a faster sintering rate and lower sintering temperature than undoped c-ZrO₂. In particular, doped c-ZrO₂ achieved a density of 95% of its theoretical value at 1275 °C, while undoped c-ZrO₂ reached the same value at 1325 °C. The different sinterability of doped c-ZrO₂ and undoped c-ZrO₂ can be attributed to their different behaviour of grain growth. For grain growth measurements, the specimens sintered at 1400 °C were annealed at 1400, 1500 and 1600 °C for 10, 30 and 66 h. It was seen that grain growth rate could be controlled by the deliberate addition of 1 wt.% grain boundary phase of α-Al₂O₃. A grain growth exponent of 2 and activation energy for grain growth of 298 kJ/mol were obtained for undoped c-ZrO₂. The α-Al₂O₃ containing specimens had a grain growth exponent of 3 and activation energy of 361 kJ/mol. The slow grain growth in doped c-ZrO₂ is attributed to solute ions segregation in grain boundary region. The addition of the grain boundary phase results in limiting matter transfer along the grain boundary resulting in slower grain growth.     

Densification and grain growth during solid state sintering of LaPO4

This work is devoted to the kinetic study of densification and grain growth of LaPO₄ ceramics. By sintering at a temperature close to 1500 °C, densification rate can reach up to 98% of the theoretical density and grain growth can be controlled in the range 0.6–4 μm. Isothermal shrinkage measurements carried out by dilatometry revealed that densification occurs by lattice diffusion from the grain boundary to the neck. The activation energy for densification (E_D) is evaluated as 480 ± 4 kJ mol⁻¹. Grain growth is governed by lattice diffusion controlled pore drag and the activation energy (E_G) is found to be 603 ± 2 kJ mol⁻¹. The pore mobility is so low that grain growth only occurs for almost fully dense materials.     

TiO2 as a sintering additive for KNbO3 ceramics

Improved densification during the conventional sintering of KNbO₃ ceramics was achieved by using small additions of TiO₂. This improved densification can be explained on the basis of high-temperature chemical reactions in the system. X-ray diffractometry and electron microscopy were used in combination with diffusion-couple experiments in order to elucidate the chemical reactions between KNbO₃ and TiO₂. TiO₂ reacts with KNbO₃ forming KNbTiO₅, and a low concentration of Ti incorporates in the KNbO₃ structure resulting in the formation of oxygen vacancies and, consequently, in an improvement in the densification. At ∼1037 °C eutectic melting between the KNbO₃ and the KNbTiO₅ further improves the densification of the KNbO₃ ceramics.     

Effects of sintering temperature on microstructure, nitrogen deficiency and densification of spark plasma sintered Mn3Cu0.5Ge0.5N

Single-phase Mn₃Cu_0.5Ge_0.5N bulks were prepared by spark plasma sintering (SPS) in nitrogen atmosphere at different sintering temperatures, and the effects of sintering temperature on microstructure, nitrogen deficiency and densification were studied. It was found that the densification is accompanied by the thermal decomposition of Mn₃Cu_0.5Ge_0.5N. Nitrogen deficiency and porosity due to the thermal decomposition of the compound do not increase with increase of the sintering temperature; the nitrogen deficiency from decomposition is compensated by the diffusion of nitrogen atoms from the N₂ atmosphere. When the two processes reach the balance, minimum nitrogen deficiency of Mn₃Cu_0.5Ge_0.5N is achieved together with the highest densification.     

Microwave dielectric properties of BaO-2(1 − x)ZnO-xNd2O3-4TiO2 (x = 0-1.0) ceramics

Microwave dielectric properties of (1 − x)BaZn₂Ti₄O₁₁-xBaNd₂Ti₄O₁₂ (x = 0-1.0) ceramics were investigated by the solid-state reaction with the purpose of finding a microwave ceramics with high dielectric constant (?_r), high quality factor (Q × f) and low temperature coefficient of resonant frequency (τ_f). A two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ was formed and SEM photographs show equiaxed BaZn₂Ti₄O₁₁ grains and columnar BaNd₂Ti₄O₁₂ grains. The microwave dielectric properties were strongly determined by the chemical composition. As increasing x from 0 to 1.0, the phase composition varied from pure BaZn₂Ti₄O₁₁, to the two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ and then to pure BaNd₂Ti₄O₁₂. Therefore, the ?_r raised from 29.1 to 82.0 and the Q × f values decreased from 54,630 GHz to 8110 GHz, and the τ_f values increased from −29 ppm/°C to 94 ppm/°C. 0.8BaZn₂Ti₄O₁₁-0.2BaNd₂Ti₄O₁₂ ceramics sintered at 1250 °C for 2.5 h had ?_r = 39.1, Q × f = 37,850 GHz and τ_f = −9 ppm/ °C.     

Effect of chromium additive on sintering and oxidation behavior of HfB2-SiC ceramics

The effect of chromium admixture on the processes in the HfB₂-SiC ceramic powder system during its pressureless sintering at 1600?°C was studied. It was shown that an increase in chromium content from 0% to 15.5% in the HfB₂-SiC ceramic powder mixture leads to a continuous increase in its relative density up to 90%. A transient liquid phase Cr-Si-C-B is formed at 1600?°C, and it promotes intense sintering of HfB₂ and SiC powders. The oxidation resistance of HfB₂-SiC-Cr ceramics was studied in static air at 1000–1500?°C. It was shown that the oxidation resistance is greatly improved due to a decrease in the porosity of the sintered ceramic system because of chromium additive. The presence of chromium oxide in the formed surface glassy layer can also lead to the increase in the oxidation resistance. These results suggest that chromium can be considered as a promising sintering additive for HfB₂-SiC and similar systems.     

Cr2O3 doping in ZnO–0.5 mol% V2O5 varistor ceramics

The effects of the amount of Cr₂O₃ (0.5–4 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO–0.5 mol% V₂O₅ system. The microstructure of the samples consists mainly of ZnO grains with ZnCr₂O₄ and α-Zn₃(VO₄)₂ as the minority secondary phases. The addition of Cr₂O₃ is found to be effective in controlling the abnormal ZnO grain growth often found in V₂O₅-doped ZnO ceramic system, and a more uniform microstructure can be obtained. The varistor performance is also improved as observed from the increase in the non-linear coefficient α of the Cr₂O₃-doped ZnO–V₂O₅ samples. The α value is found to increase with the amount of Cr₂O₃ for up to 3 mol% Cr₂O₃ content. Further increase in Cr₂O₃ is found to cause a decrease in the α value. The highest α value of 28.9 is obtained for the ZnO–0.5 mol% V₂O₅–3 mol% Cr₂O₃ sample.     

Effects of alumina on the crystallization behavior, densification and dielectric properties of BaO–ZnO–SrO–CaO–Nd2O3–TiO2–B2O3–SiO2 glass–ceramics

The alumina addition effects on the crystallization, sintering behaviors and dielectric properties of BaO–ZnO–SrO–CaO–Nd₂O₃–TiO₂–B₂O₃–SiO₂ (Ba–Zn–Sr–Ca–Nd–Ti–B–Si) glass powder were investigated using the differential thermal analyzer (DTA), thermo-mechanical analyzer (TMA), X-ray diffractometer (XRD). The results showed that the addition of alumina powder into Ba–Zn–Sr–Ca–Nd–Ti–B–Si glass changed the crystallization sequence from Nd₂Ti₄O₁₁–Nd_0.66TiO₃ to Nd₂Ti₃O_8.7–Nd₂Ti₂O₇–Nd₂Ti₄O₁₁and increased the densification activation energy due to the dissolution of Al³⁺ ions into the glass structure. Fully densified 30 vol.% alumina-added Ba–Zn–Sr–Ca–Nd–Ti–B–Si glass can be obtained via glass viscous flow before the second and third crystalline phases, Nd₂Ti₂O₇ and Nd₂Ti₄O₁₁crystallization. The 30 vol.% alumina-added Ba–Zn–Sr–Ca–Nd–Ti–B–Si glass–ceramics sintered at 900 °C exhibited a high dielectric constant of 17 and a quality factor of about 820, which provided a promising candidate for LTCC applications.     

Synthesis and densification behaviour of magnesium aluminate spinel: Effect of Dy2O3

Magnesium aluminate spinels have been developed by reaction sintering of calcined alumina and calcined magnesia and its densification behaviour was studied in presence of Dy₂O₃. Green bar made from stoichiometric spinel composition with and without Dy₂O₃ were subjected to dilatometric study, densification study and microstructural evaluation by SEM. It was found that Dy₂O₃ additive does not have significant effect on the spinelisation but favours the densification of the spinel. Microstructure of sintered spinel without any additive is non-uniform with some exaggerated grain growth. Dy₂O₃ prevents the exaggerated grain growth and thereby helps in the densification process.     

Temperature dependences of piezoelectric properties of vanadium substituted SrBi2Nb2O9 ceramics with grain orientation

The temperature dependence of the piezoelectric properties of vanadium substituted strontium bismuth niobate, SrBi₂Nb_1.95V_0.05O₉ (SBNV) ceramics, were investigated in various vibration modes. The effects of grain orientation in SBNV ceramics on the piezoelectric properties were also studied by the hot-forging (HF) method. The anisotropy of the piezoelectric properties of each vibration mode was confirmed by observing the grain orientation. In particular, HF-SBNV ceramics of the (33) and (15) modes showed excellent piezoelectric properties with relatively high mechanical quality factors, Q_m (2200, 4600), and high electrical quality factors, Q_{e max} (66.0, 21.6), respectively. In addition, HF-SBNV ceramics showed low temperature coefficients of resonance frequency TC-f_r (−16.5, −27.0). HF-SBNV ceramics are considered to be superior candidates for the lead-free piezoelectric application of ceramic resonators.     

Grain growth kinetics in Dy-doped Bi0.5Na0.5TiO3 ceramics

Dysprosium-doped bismuth sodium titanate ceramics were prepared using the conventional mixed-oxide method. The amount of dysprosium used was varied from 0 to 2 at.%. The mixed powders were calcined at 800 °C and checked for phase purity using X-ray diffraction technique. The calcined powders were then cold-pressed into pellets and sintered at 1050 °C for the time ranging from 2 to 48 h. The ceramics were checked for phases and microstructures using an X-ray diffractometer and a scanning electron microscope, respectively. The analysis showed that undoped BNT ceramics sintered at longer time exhibited a significant grain growth with non-uniform grain size distribution and shape. The Dy-doped BNT however showed a much more limited grain growth behavior, resulting in smaller grain size and more equiaxed grain shape. It was also found that all Dy-doped BNT ceramics sintered at 48 h possessed lower porosity than those sintered for shorter time.     

Approach of phase transformations and densification in nanostructured and (Bi2O3, ZnO,TiO2) doped silica ceramics

The low temperature sintering of silica is studied under the influence of sintering aids and nanosized powders using X-Ray Diffractometry (XRD) and high-temperature environmental scanning electron microscopy analyses (HT-ESEM). Two particular aids were chosen to conduct this study, [Bi₂O₃–ZnO]_eutectic and titania. We report a lowering of the crystallization temperature when the former compound is introduced in the silica while a raise is observed when the latter is used. Moreover, the amorphous silica crystallization into cristobalite inhibits drastically the kinetics of densification of silica-based materials.