Carrier dynamics and intervalley scattering in InN

The carrier cooling and the carrier relaxation of an InN thin film illuminated with two excitation energies of 1.53 and 3.06 eV were studied by an ultrafast time-resolved photoluminescence upconversion apparatus. The hot phonon effect could be accounted for longer effective phonon emission times as compared to the theoretical prediction. The rise time and the LO phonon emission time for 3.06 eV excitation were much smaller than those for 1.53 eV excitation. These differences were attributed to the intervalley scattering between the Γ₁ and Γ₃ valleys in InN when carriers were excited with the energy of 3.06 eV. The intervalley scattering times of 250 fs and 2 ps were estimated for the intervalley scattering from the Γ₁ to Γ₃ valley and the reversed scattering process, respectively.     

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A₁ and E₁ plus E₂ symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 × 10²⁰ cm^− 3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.     

Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering

The structure and optical properties of InN and In-rich InAlN films grown by magnetron sputtering were investigated. The XRD results show that these films are highly c-axis oriented. The film morphology and microstructure of these films were observed by AFM and SEM which reveals that the films grown in island growth mode. Optical properties of these films were studied by absorption method. The band gap energy of the InN film grown under substrate temperature of 400 °C is 1.38 eV. By studying the E _g values of InN films deposited under different substrate temperature, the Burstein-Moss effect on band gap of InN was examined. The significant band gap bowing of our In-rich InAlN films was found to be correlated with the In contents. The bowing parameter of 3.68 eV was obtained which is in agreement with previous theoretical predictions.     

Luminescence properties and electronic structure of Sm<Superscript>3+</Superscript>-doped YAl<Subscript>3</Subscript>B<Subscript>4</Subscript>O<Subscript>12</Subscript>

The luminescence properties of Sm³⁺ ions in YAl₃B₄O₁₂ were studied upon synchrotron excitation in the 3.8–11 eV region. In addition to the 4f → 4f excitation bands, the excitation spectra of the Sm³⁺ emission contain broad bands at 6.1 and ~7.0 eV. These bands are attributed to charge transfer transition in Sm³⁺–O²⁻ complexes and 4f → 5d transition of Sm³⁺ ions, respectively. The optical absorption edge of YAl₃B₄O₁₂ was determined at 7.3 eV. A comparison with the results of electronic structure calculations on YAl₃B₄O₁₂ is also made.     

UV–VUV spectroscopy of rare earth doped persistent luminescence materials

The electronic and defect energy level structure of polycrystalline SrAl₂O₄:Eu²⁺,R³⁺ persistent luminescence materials were studied with thermoluminescence and UV–VUV synchrotron radiation emission and excitation spectroscopy. Theoretical calculations using the density functional theory (DFT) were carried out simultaneously with the experimental work. The experimental band gap energy (E_g) value of 6.6 eV agrees very well with the DFT value of 6.4 eV. The 4f⁷ → 4f⁶5d¹ excitation bands of Eu²⁺ were found rather similar irrespective of the R³⁺ co-dopant. The trap level energy distribution depended strongly on the R³⁺ co-dopant except for the shallowest trap energy above the room temperature remaining the same, however. The different processes in the mechanism of persistent luminescence from SrAl₂O₄:Eu²⁺,R³⁺ was constructed and discussed.     

Resonant Raman Study of Superconducting Gap and Electron-Phonon Coupling in YbBa2Cu3O7−δ

We investigate the electronic background as well as the 02-03 mode at 330 cm ^–1 of highly doped YbBa ₂ Cu ₃ O _7– in B _1g symmetry. Above the critical temperature T._c the spectra consist of an almost constant electronic background and superimposed phononic excitations. Below T _c the superconducting gap opens and the electronic background redistributes exhibiting a 2 peak at 320 cm ^–1 . We use a model that allows us to separate the background from the phonon. In this model the phonon intensity is assigned to the coupling of the phonon to inter- and intraband electronic excitations. For excitation energies between 1.96 eV and 2.71 eV the electronic background exhibits hardly any resonance. Accordingly, the intraband contribution to the phonon intensity is not affected. In contrast, the interband contribution vanishes below T _c at 1.96 eV while it remains almost unaffected at 2.71 eV.     

First principles calculations of the electronic, dynamical, and thermodynamic properties of the rocksalt ScX (X = N, P, As, Sb)

We have investigated the electronic, dynamical, and thermodynamic properties of the rocksalt ScX (X = N, P, As, Sb) using a plane-wave pseudopotential method within the generalized gradient approximation in the frame of density functional perturbation theory. The calculated lattice constants are found to differ by less than 0.56% from the available experimental values. These materials have the indirect Γ–X band gaps and a wide and direct band gap at the X-point in band structure, which are closer to experimental results than the previous calculations. A linear-response approach is used to calculate the phonon frequencies, the phonon density of states and LO–TO splitting. The obtained phonon frequencies at the zone-center (Γ-point) for the Raman-active and infrared-active modes are analyzed. We also calculate the thermodynamic functions using the phonon density of states, and the calculated values are in nearly perfect agreement with experimental data.     

Observation of phosphorescence from fluorescent organic material Bebq2 using phosphorescent sensitizer

Absorption, emission and excitation spectra of bis(10-hydroxybenzo [h] quinolinato)-beryllium (Bebq₂) were studied using polystyrene film doped with 5 wt% Bebq₂, N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidene (NPB) film doped with 60 wt% Bebq₂, and neat film. The monomer and aggregate of Bebq₂ give fluorescence at 492 and 511 nm at 12 K, respectively. A strong T₁ emission with a vibronic structure was observed from Bebq₂ below 70 K by heavily doping with phosphorescent tris(2-phenylpyridine) iridium [Ir(ppy)₃]. The T₁ energy of Bebq₂ was estimated to be 2.26 eV from the onset of the 573 nm 0–0 vibronic emission band. The energy transfer mechanism from Ir(ppy)₃ to the T₁ state of Bebq₂ is discussed.     

Insights to Carrier-Phonon Interactions in Lead Halide Perovskites via Multi-Pulse Manipulation

A fundamental understanding of the hot-carrier dynamics in halide perovskites is crucial for unlocking their prospects for next generation photovoltaics. Presently, a coherent picture of the hot carrier cooling process remains patchy due to temporally overlapping contributions from many-body interactions, multi-bands, band gap renormalization, Burstein–Moss shift etc. Pump-push-probe (PPP) spectroscopy recently emerges as a powerful tool complementing the ubiquitous pump-probe (PP) spectroscopy in the study of hot-carrier dynamics. However, limited information from PPP on the initial excitation density and carrier temperature curtails its full potential. Herein, this work bridges this gap in PPP with a unified model that retrieves these essential hot carrier metrics like initial carrier density and carrier temperature under the push conditions, thus permitting direct comparison with traditional PP spectroscopy. These results are well-fitted by the phonon bottleneck model, from which the longitudinal optical phonon scattering time τ_LO, for MAPbBr₃ and MAPbI₃ halide perovskite thin film samples are determined to be 240 ± 10 and 370 ± 10 fs, respectively.     

Effect of Mg and Ti doping on the luminescence of Y2O2S:Eu

The Y₂O₂S:Eu³⁺,Mg²⁺,Ti^IV (x_Eu = 0.028, x_Mg = 0.086, x_Ti = 0.03) materials were prepared with the flux fusion method. According to X-ray powder diffraction, the materials had the hexagonal crystal structure. The emission of Y₂O₂S:Eu³⁺,Mg²⁺,Ti^IV was centered at 627 nm (λ_exc : 250 nm) due to the ⁵D₀ → ⁷F₂ transition of Eu³⁺. The excitation spectra (λ_em : 627 nm) showed broad bands at 240 and 320 nm due to the O²⁻ → Eu³⁺ and S²⁻ → Eu³⁺ charge transfer transitions, respectively. The latter band can also overlap with the Ti → Eu³⁺ energy transfer. In the excitation spectra with synchrotron radiation, in addition to the O²⁻ → Eu³⁺ and S²⁻ → Eu³⁺ charge transfer transitions, excitation over the band gap was observed at 4.8 eV (258 nm). The red persistent luminescence due to the ⁵D₀ → ⁷F₂ emission from Eu³⁺ residing in the regular Y³⁺ site of the host was ca. 10 min with 1 min fluorescent lamp irradiation. In addition, a very broad band was observed at 600 nm probably due to the Ti³⁺ emission.     

Oxidation study of polycrystalline InN film using in situ X-ray scattering and X-ray photoemission spectroscopy

Oxidation process of polycrystalline InN films were investigated using in situ X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS). The films were grown by dc sputter on sapphire (0001) substrates and were oxidized in air at elevated temperatures. The XRD data showed that the structure of the films changed to the bixbyite In₂O₃ (a = 10.11 Å) above 450 °C. Chemical configurations of the sample surfaces were investigated using high-resolution XPS. For the non-intentionally oxidized InN film, XPS analysis on the In 3d peak and the N 1s main peak at 396.4 eV suggests that indium and nitrogen are bound dominantly in the form of InN. An additional peak observed at 397.4 eV in the N 1s photoelectrons and the O 1s peaks indicate that the InN film surface is partly oxidized to have InO_xN_y configuration. After oxidation of the InN film at elevated temperature, the O 1s spectrum is dominated by In₂O₃ peak, which indicates that the structure is stable chemically with In₂O₃ configuration at least within the XPS probing depth of a few nm.     

Mn- and Cr-Doped InN: A Promising Diluted Magnetic Semiconductor Material

Cr- and Mn-doped InN films were successfully grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Low temperature GaN buffer layers grown by metal-organic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN and sapphire. A high n-type carrier concentration of 1.5×10²⁰ cm^–3 was measured in InN films with 3% Cr-doping. Films of this type exhibit a well-defined in-plane magnetic hysteresis loop and remanence for temperatures varying from 5 to 300K. The Mn-doped films, however, turned out to exhibit less clear magnetic properties. Thus, ferromagnetism in Cr-doped InN can be concluded from our measurements.     

Structural,optical and electrical properties of ZnTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> thin films

ZnTe_1−x Se _x films were deposited on glass substrates kept at 200 °C by the electron beam evaporation technique. These films exhibited cubic structure and the lattice parameter increased with increase of Tellurium concentration in the films which confirmed the solid solution formation. The grain size is found to increase with Te content. The dislocation density and lattice strain show a decreasing trend with increasing of Te content. Band gap values of 2.73 eV, 2.63 eV, 2.52 eV and 2.41 eV have been calculated for the films of composition ‘x’ = 0.2, 0.4, 0.6 and 0.8, respectively, which confirmed the formation of solid solution between ZnSe and ZnTe. Refractive index of the films increased from 2.535 to 2.826 as the concentration of Te increased. All the films showed high resistivity values. Laser Raman spectral studies of ZnTe_1−x Se _x revealed LO phonon frequencies whose values are located in between the LO phonon frequencies of ZnSe and ZnTe.     

Optical studies on non-stiochiometric (Zn, Fe)S chalcogenide bulk pellets prepared by coprecipitation

Non-stiochiometric ternary chalcogenides Zn_1−xFe_xS (x = 0.005, 0.013, 0.05, 0.231, and 0.43) bulk powders were prepared by coprecipitation of ZnS and FeS by adding Na₂S to aqueous solutions containing FeSO₄ and ZnSO₄. Pellets of resulting material were sintered at 1123 K in vacuum-sealed quartz ampoules maintained at 10⁻² torr for a total of 165 h.Direct optical bandgaps were found to decrease with increase in Fe content viz. 2.1 eV < E_g < 3.3 eV for 0.43 > x > 0.005. A subsidiary peak attributed to photoionization transitions of Fe ions appeared at lower energy values (around 2.7 eV) whose intensity increased with increase in Fe content.Room temperature photoluminescence emission studies (PLE) of the pellets were obtained with λ_exc = 225 nm, revealed UV region peaks centered at energies above that of bandgap (E_g), and correspond to free exciton emission. While those of energies below that of E_g are attributed to defects due to vacancies and interstitials. The PLE peaks in visible region (viz. 491, 518, and 596 nm) are attributed to transitions involving impurity levels. Peak at 617 nm is expected to be due to transitions associated with Fe²⁺ levels localized at 2.1 eV below the (Zn, Fe)S conduction edge. The various bypassing processes leading to the deactivating behavior of Fe²⁺ as evident from decreasing luminescence peak intensity with increasing ‘x’, have been explained qualitatively.     

Bismuth alloying in GaAs: a first-principles study

We present a theoretical study mainly devoted to the investigation of the bowing parameter in the GaAs_1–xBi_x alloy. Results reveal that the fundamental band gap for GaAs is close to 0.08 eV and it corresponds to −2.01 eV for GaBi. The addition of Bi to GaAs serves to make the lattice constant of the crystal larger than GaAs and distorts the valence band. This causes an intrinsic asymmetry between the carrier mobility. The band gap of GaAsBi alloy decreases with increasing Bi content. Moreover, the non-linear variation of the lattice parameter is clearly visible with upward bowing parameter, equal to −0.378 ± 0.16 Å. Compared with preceding works on the matter, the band gap versus composition is well fitted with a downward bowing parameter of 1.74 ± 0.51 eV. This shows that the direct band gap of this alloy covers a spectral region ranging from near infrared to infrared.     

Recombination luminescence in alkali metal sulfates

In this paper we present the results of investigation of the nature of intrinsic luminescence caused by photon excitation in a wide spectral range from 10.3 eV to 4 eV at a temperature of 15–300 K. It is shown that in alkali metal sulfates the main emission band formed after excitation by X-rays and photons with an energy of 9–11 eV and 4–7.5 eV at 15–300 K is located in the spectral range of 3.65–3.9 eV. When the sulfates are excited by 4–7.75 eV photons, in addition to the emission band at 3.65–3.9 eV the other effective long-wave band at 3.1–2.5 eV appears. It is assumed that the 3.65–3.9 eV radiation results from the recombination of electrons with unevenly located holes of SO₄⁻ type. The long-wave emission bands in the alkali metal sulfates may be connected with the formation of electron-hole trapping centers after irradiation by photons with energies above 4.4 eV.     

Site-specific luminescence of Eu<Superscript>3+</Superscript> in gel-combustion-derived strontium zirconate perovskite nanophosphors

SrZrO₃:Eu³⁺ nanoparticles with a size of about 100 nm were synthesized by a simple gel combustion route and characterized by X-ray diffraction, scanning electron microscopy, dynamic light scattering, and photoluminescence techniques. Based on the time-resolved emission data, it was inferred that three different types of Eu³⁺ ions were present in the matrix. The first type was a long-lived species (~τ = 6.0 ms) present at symmetric “Sr²⁺” sites, observed for excitations at 229 and 393 nm. The second was a short-lived species (τ = 1.0 ms) observed for excitations at 229, 296, and 393 nm, while for 296-nm excitation, a long-lived species (τ = 4.0 ms) was also observed. This suggested that Eu³⁺ ions can be present at relatively lower symmetric “Zr⁴⁺” sites with two different environments, which differ in the presence of charge-compensating defects. The color coordinates of the system were evaluated and plotted on a CIE index diagram.     

Mechanism of Inelastic Phonon Scattering on the Quadrupolar o–H2 Impurity in p–H2 Matrix

A quantum–mechanical problem on inelastic phonon scattering by a quadrupolar pair defect is discussed. As an example of the physical system, where this mechanism is of great concern, the solution of o–H ₂ molecules in p–H ₂ matrix is considered. The effective relaxation time _p of a phonon collision with a pair defect as a function of the phonon frequency is calculated. Due to intrinsic degrees of freedom, pair defects give rise to the resonance phonon scattering above a certain temperature T ₀ , which for o–H ₂ —p–H ₂ mixtures is approximately 6 ÷ 7 K.     

Optical conductivity of single crystals of Ba1?x Mx BiO3 (M=K, Rb, x=0.04, 0.37)

Reflectance data (0.001–4.0 eV) from several large (a typical surface area 3×3 mm²) single crystals of Ba_1–x K_xBiO₃ (x=0.04, 0.37) (BKBO) and Ba_1–x,Rb_xBiO₃ (x=0.37) (BRBO) were obtained by Fourier transform infrared (FTIR) and ellipsometric methods. Normal-state optical conductivities (₁) of these samples were obtained from infrared and ellipsometric measurements using a Kramers-Kronig transform. A broad mid-IR band was observed that peaked at 0.3 eV for BKBO and at 0.16 eV for BRBO at room temperature. Each band was fitted with two Lorentz oscillators. The optical mass of the charge carriers was obtained from a Drude fit, and was found to be large (m= 28–33m _e ). These overdamped charge carriers can be viewed as polarons with a large effective mass. An optic phonon mode at 325cm^–1 was also observed in the metallic phase. This mode was identified as a disorder-induced lattice mode, and was strongly enhanced at 8 K, favoring a strong coupling between this phonon and itinerant electronic states. Low-frequency spectra between 10 and 400 cm^–1 observed below the superconducting temperature indicated an energy gap that agreed with the BCS-type mechanism. Interpretations of low-temperature measurements on BKBO and BRBO were complicated due to the change of color of the sample from bluish-green to bronze-red. Upon warming, samples revert to their original bluish-green color.     

Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire

The optical properties of as-grown InN/sapphire films prepared by plasma assisted molecular beam epitaxy (PA-MBE) are characterized by photoluminescence (PL), Raman scattering (RS) and infrared (IR) reflectance techniques. The PL measurements have consistently exhibited lower values of InN band gaps providing clear indications of electron concentration dependent peak energy shifts and widths. The phonon modes identified by RS are found to be in good agreement with the grazing inelastic X-ray scattering measurements and ab initio lattice dynamical calculations. An effective medium theory used to analyze IR reflectance spectra of InN/sapphire films has provided reasonable estimates of free charge carrier concentrations.