Electrochromic properties of NiOxHy thin films

NiO_xH_y films were prepared by DC magnetron sputtering in H₂/O₂ atmosphere. NiO_xH_y coatings with transparency and high electrochromic efficiency were obtained by changing H₂ content. A 60 nm thick NiO_xH_y film with transmittance of 0.57 (as-deposited state), 0.78 (bleached state) and 0.24 (coloured state) at wavelength of 550 nm was deposited in an atmosphere of H₂(60%)+O₂(40%). Analysis of infrared spectra (60002400 cm⁻¹) showed that the absorption peaks for bleached and colored states are associated with free ‘OH’ and OH stretching vibrations, respectively. XPS Ni2p core level spectra of colored NiO_xH_y film exhibited a peak at 856.2±0.2 eV which is attributed to Ni³⁺. Ni2p core level spectra of the bleached and as-deposited films exhibited two peaks at 856.4±0.2 and 854.6±0.2 eV which are attributed to Ni³⁺ and Ni²⁺.     

Chemical bath deposition and electrochromic properties of NiOx films

Nickel oxide (NiO_x) thin films were prepared by the chemical deposition method (solution growth) on two kinds of substrates: (1) glass and (2) glass/SnO₂ : F. Films were thermally treated at 200°C for 10 min in atmosphere. The texture, microstructure and composition were examined by optical microscopy, X-ray diffraction patterns (XRD) and X-ray photoelectron spectroscopy (XPS) analysis of the surface layer. The films exhibited anode electrochromism. The optical properties of the bleached and colored state were examined with transmittance spectroscopy in the visible region and reflectance FTIR spectroscopy. An electrochromic test device (ECTD), consisting of SnO₂/NiO_x/NaOH–H₂O/SnO₂, was assembled and tested by cyclic voltammetry combined with a simultaneous recording of the change of transparency at λ=670 nm. The coloration efficiency was evaluated to be 24.3 cm²/C. The spontaneous ex-situ change of coloration with time of the colored and bleached NiO_x/SnO₂/glass was also examined.     

Sputtered Cd1−xZnxTe films for top junctions in tandem solar cells

Cd_1−xZn_xTe alloy films with 1.6 and 1.7 eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (1 1 1) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically 0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl₂ and ZnCl₂, in dry air or H₂/Ar ambient at 390 °C. The best performance of a Cd_1−xZn_xTe cell (, ) was found for treatment with vapors of the mixed CdCl₂+0.5%ZnCl₂ in an H₂/Ar ambient after pre-annealing at 520 °C in pure H₂/Ar.     

Electrochromism in NiOx and WOx obtained by spray pyrolysis

Electrochromic films of NiO_x and WO_x were produced by the spray pyrolysis technique. The nickel-oxide-based coatings were obtained from an aqueous solution of nickel nitrate. Those obtained below 300° C did not show any diffraction peak when subjected to X-ray diffraction analysis, and those obtained above 400° C showed a diffraction pattern corresponding to cubic NiO. Films obtained below 300° C showed an electrochromic effect with an electrochromic efficiency of 30 cm²/C.Tungsten-oxide-based coatings were obtained from a solution of H₂WO₄ in aqueous ammonia. The films were grown at 150° C, and they showed a diffraction pattern corresponding to monoclinic WO₃ when subjected to a post-heat treatment at 400° C during ten minutes. The WO_x films showed a noticeable electrochromism under cation insertion, and presented an electrochromic efficiency of 42 cm²/C. Both as-deposited and heat-treated samples showed good electrochromism.     

Photovoltaic solar cell properties of CdxZn1−xO films prepared by sol–gel method

Cd_xZn_1−xO films have been deposited by sol–gel spin-coating method onto glass substrates. The Cd/Zn ratio in solution was changed from 0 to 1. Zinc acetate dehydrates, cadmium acetate dehydrates, 2-methoxyethanol and monoethanolamine were used as a starting material (zinc and cadmium), solvent and stabilizer, respectively. The crystal structure and orientation of the films were investigated by X-ray diffraction (XRD) patterns. XRD patterns show that the films are polycrystalline nature. As x varies from 0 to 1, it was observed that the crystal structure changed from wurtzite (ZnO) to cubic (CdO) structure. The optical properties of these films have been investigated by means of the optical transmittance and reflectance spectra. A significant change in optical absorption edge, optical band gap and optical constant with variation in composition was observed.     

Electrodeposition of CuInxGa1−xSe2 thin films

CuIn_xGa_1−xSe₂ (CIGS) polycrystalline thin films with various Ga to In ratios were grown using a new two-step electrodeposition process. This process involves the electrodeposition of a Cu–Ga precursor film onto a molybdenum substrate, followed by the electrodeposition of a Cu–In–Se thin film. The resulting CuGa/CuInSe bilayer is then annealed at 600°C for 60 min in flowing Argon to form a CIGS thin film. The individual precursor films and subsequent CIGS films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and Auger electron spectroscopy. The as-deposited precursor films were found to be crystalline with a crystal structure matching that of CuGa₂. The annealed bi-layers were found to have the same basic chalcopyrite structure of CuInSe₂, but with peak shifts due to the Ga incorporation. Energy dispersive spectroscopy results show that the observed shifts correlate to the composition of the films.     

The structural, transport and optical properties of screen printed CuxS thick films

The structural, transport and optical properties of screen printed CuxS thick films with possible application in photovoltaic and photothermal devices are reported. The X-ray diffraction studies show that the screen printed films are stable up to about 220°C in air and belong to the CuxS structure. Above this temperature it decomposes mainly to CuSO₄. The electrical conductivity depends on the sintering temperature and the amount of flux, Cu(NO₃)₂, used in the paste for screen printing. The differential scanning calorimetry studies reveal the phase changes occurring during heating and pertaining to the dependence of electrical conductivity on the sintering temperature. A configuration consisting of screen printed CuxS on chemically deposited and annealed (at 200°C) CdS thin film exhibited rectification.     

Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn_1−xGa_xSe₂ polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn_1−xGa_xSe₂ films had a smooth surface morphology and a single chalcopyrite phase.     

A new route for fabricating CdO/c-Si heterojunction solar cells

CdO/c-Si solar cells have been made by depositing CdO thin films on p-type monocrystalline silicon substrate by means of the rapid thermal oxidation (RTO) technique using a halogen lamp at 350 °C/45 s in static air. Results on structural, optical, and electrical properties of grown CdO films are reported. The electrical and photovoltaic properties of CdO/Si solar cells are examined. Under AM1 illumination condition, the cell shows an open circuit voltage (V_OC) of 500 mV, a short circuit current density (J_SC) of 27.5 mA/cm², a fill factor (FF) of 60%, and a conversion efficiency (η) of 8.84% without using frontal grid contacts and/or post-deposition annealing. Furthermore, the stability of solar cells characteristics is tested.     

Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition

Zn_1−xMg_xO:Al thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from room temperature to 500 °C by analyzing the structural, optical and electrical properties. The best sample deposited at 250 °C shows the lowest room-temperature resistivity of 5.16×10⁻⁴ Ω cm, and optical transmittance higher than 80% in the visible region. It is observed that the optical band gap decreases from 3.92 to 3.68 eV when the substrate temperature increases from 100 to 500 °C. The probable mechanism is discussed.     

Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

A simple spray method for the preparation of pyrite (FeS₂) thin films has been studied using FeSO₄ and (NH₄)₂S_x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H₂S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10¹⁶–10²⁰ cm⁻³ and a Hall mobility (μ_H) in the range 200–1 cm²/V s. The best electrical properties (p=7×10¹⁶ cm⁻³, μ_H=210 cm²/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO₄ solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.     

Pulsed laser deposition of W–V–O composite films: Preparation, characterization and gasochromic studies

Modified tungsten oxide films by vanadium oxide provide neutrally coloring electrochromic electrodes for smart windows technology. In this study W–V–O mixed oxide films were fabricated by Nd:YAG pulsed laser deposition (PLD), λ=1064 nm, from mixed pressed powders of (WO₃)_1−x(V₂O₅)_x, x=0, 0.09, 0.17, 0.23, 0.29 and 0.33, at 13.3 Pa oxygen partial pressure and 200 °C temperature on glass substrates. X-ray photoelectron spectroscopy (XPS) revealed V⁵⁺, V⁴⁺, W⁶⁺ and W⁵⁺ surface oxide states, where the ratio of W⁵⁺/W⁶⁺ enhances by the amount of vanadium in the films. Surface morphology was studied by scanning electron microscope (SEM) and optical properties by transmission-reflection spectra. Results showed that films with a low amount of vanadium oxide have better porosity and higher optical band gaps. The gasochromic response to hydrogen gas exposure was found better for x=0.09 in the sense of both deeper and faster coloring. Weak responses of samples with more vanadium oxide were attributed to higher amounts of W⁵⁺ in the films and also to lower porosity.     

Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films

Polycrystalline thin films of CuIn_1−xGa_xTe₂ have been deposited by flash evaporation on Corning glass 7059 substrates at T_s=200°C. Hall and resistivity measurements have been carried out down to 77 K. These films are p-type and the variation of the resistivity may be linked to defects, disorder of the material or grain boundaries. The PL spectra of these films after annealing in argon atmosphere at T_a=450°C have showed a broad band emission between 0.98 and 1.12 eV in which the main peak appears at 1.05 eV (at 4.2 K).     

Pre-existence of HxWO3 in e-beam deposited WO3 films

Structural and optical properties of e-beam deposited tungsten trioxide (WO₃) films in as-deposited and electrochemically coloured states were investigated by spectrophotometric and XRD techniques. These investigations have shown the as-deposited WO₃ films to be porous and with small amount of H_xWO₃ pre-existing in them. The films further facilitate insertion of H⁺ ions on colouration resulting in tetragonal H_xWO₃ with a = 4.74Å and c = 3.19Å.     

Novel cobalt-free cathode materials BaCexFe1−xO3−δ for proton-conducting solid oxide fuel cells

A series of cobalt-free and low cost BaCe_xFe_1−xO_3−δ (x = 0.15, 0.50, 0.85) materials are successful synthesized and used as the cathode materials for proton-conducting solid oxide fuel cells (SOFCs). The single cell, consisting of a BaZr_0.1Ce_0.7Y_0.2O_3−δ (BZCY7)-NiO anode substrate, a BZCY7 anode functional layer, a BZCY7 electrolyte membrane and a BaCe_xFe_1−xO_3−δ cathode layer, is assembled and tested from 600 to 700 °C with humidified hydrogen (3% H₂O) as the fuel and the static air as the oxidant. Within all the cathode materials above, the cathode BaCe_0.5Fe_0.5O_3−δ shows the highest cell performance which could obtain an open-circuit potential of 0.99 V and a maximum power density of 395 mW cm⁻² at 700 °C. The results indicate that the Fe-doped barium cerates can be promising cathodes for proton-conducting SOFCs.     

Optical, electrical and structural investigations on Cd1−xZnxSe sintered films for photovoltaic applications

II–VI polycrystalline semiconducting materials have come under increased scrutiny because of their wide use in the cost reduction of devices for photovoltaic applications. Cd_1−xZn_xSe is an important semiconducting alloy because of the tunability of its physical parameters such as band gap and lattice parameters by controlling its stoichiometry. Many more material characteristics of it would be altered and excellently controlled by controlling system composition x.Polycrystalline thin films of Cd_1−xZn_xSe with variable composition (0x1) have been deposited onto ultra-clean glass substrates by sintering process. The optical, structural and electrical transport properties of Cd_1−xZn_xSe thin films have been examined. The optical band gap and optical constants of these films were determined by using double beam spectrophotometer. The DC conductivity and activation energy of the films were measured in vacuum by two-probe technique. The Schottky junction of Cd_1−xZn_xSe with indium was made and the barrier height and ideality factor were determined using current–voltage characteristics. The nature of sample, crystal structure and lattice parameters were determined from X-ray diffraction patterns. The films were polycrystalline in nature having cubic zinc-blende structure over the whole range studied.Sintering is very simple and viable compared to other cost intensive methods. The results of the present investigation will be useful in characterizing the material, Cd_1−xZn_xSe, for its applications in photovoltaics.     

Characterization of Pr1−xSrxCo0.8Fe0.2O3−δ (0.2 ≤ x ≤ 0.6) cathode materials for intermediate-temperature solid oxide fuel cells

Cathode materials consisting of Pr_1−xSr_xCo_0.8Fe_0.2O_3−δ (x = 0.2–0.6) were prepared by the sol–gel process for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The samples had an orthorhombic perovskite structure. The electrical conductivities were all higher than 279 S cm⁻¹. The highest conductivity, 1040 S cm⁻¹, was found at 300 °C for the composition x = 0.4. Symmetrical cathodes made of Pr_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ (PSCF)–Ce_0.85Gd_0.15O_1.925 (50:50 by weight) composite powders were screen-printed on GDC electrolyte pellets. The area specific resistance value for the PSCF–GDC cathode was as low as 0.046 Ω cm² at 800 °C. The maximum power densities of a cell using the PSCF–GDC cathode were 520 mW cm⁻², 435 mW cm⁻² and 303 mW cm⁻² at 800 °C, 750 °C and 700 °C, respectively.     

Preparation of In2O3:F thin films grown by spray pyrolysis technique

Transparent conducting fluorine doped indium oxide (In₂O₃:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (T_s=300 °C) showed no peaks of In₂O₃:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly [400]. For the 4500 Å thick In₂O₃:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.     

Field effect surface passivation of SiO2/Si interfaces by heat treatment with high-pressure H2O vapor

We investigated a simple field effect passivation of the silicon surfaces using the high-pressure H₂O vapor heating. Heat treatment with 2.1×10⁶ Pa H₂O vapor at 260°C for 3 h reduced the surface recombination velocity from 405 cm/s (before the heat treatment) to 38 cm/s for the thermally evaporated SiO_x film/Si. Additional deposition of 140 nm-SiO_x films (x<2) with a high density of fixed positive charges on the SiO₂/Si samples further decreased the surface recombination velocity to 22 cm/s. We also demonstrated the field effect passivation for n-type silicon wafer coated with thermally grown SiO₂. Additional deposition of 210 nm SiO_x films on both the front and rear surfaces increased the effective lifetime from 1.4 to 4.6 ms. Combination of thermal evaporation of SiO_x film and the heat treatment with high-pressure H₂O vapor is effective for low-temperature passivation of the silicon surface.     

Optical and electrical studies on molybdenum sulphoselenide [Mo(S1−xSex)2] thin films prepared by arrested precipitation technique (APT)

Nanocrystalline stoichiometric [Mo(S_1−xSe_x)₂] thin films were deposited by using arrested precipitation technique (APT) developed in our laboratory. The precursors used for this are namely, molybdenum triethanolamine complex, thioacetamide and sodium selenosulphite; and various preparative conditions are finalised at the initial stages of deposition. Formation of [Mo(S_1−xSe_x)₂] semiconducting thin films are confirmed by studying growth mechanism, optical and electrical properties. X-ray diffraction analysis showed that the composites are nanocrystalline being mixed ternary chalcogenides of the general formula [Mo(S_1−xSe_x)₂]. The optical studies revealed that the films are highly absorptive (α×10⁴ cm⁻¹) with a band-to-band direct type of transitions and the energy gap decreased typically from 1.86 eV for pure MoS₂ down to 1.42 eV for MoSe₂. The thermoelectrical power measurement shows negative polarity for the generated voltage across the two ends of semiconductor thin films. This indicate that the [Mo(S_1−xSe_x)₂] thin film samples show n-type conduction.