Nickelocene‐Precursor‐Facilitated Fast Growth of Graphene/h‐BN Vertical Heterostructures and Its Applications in OLEDs

The direct growth of high‐quality, large‐area, uniform, vertically stacked Gr/h‐BN heterostructures is of vital importance for applications in electronics and optoelectronics. However, the main challenge lies in the catalytically inert nature of the hexagonal boron nitride (h‐BN) substrates, which usually afford a rather low decomposition rate of carbon precursors, and thus relatively low growth rate of graphene. Herein, a nickelocene‐precursor‐facilitated route is developed for the fast growth of Gr/h‐BN vertical heterostructures on Cu foils, which shows much improved synthesis efficiency (8–10 times faster) and crystalline quality of graphene (large single‐crystalline domain up to ≈20 µm). The key advantage of our synthetic route is the utilization of nickel atoms that are decomposed from nickelocene molecules as the gaseous catalyst, which can decrease the energy barrier for graphene growth and facilitate the decomposition of carbon sources, according to our density functional theory calculations. The high‐quality Gr/h‐BN stacks are proved to be perfect anode/protecting layers for high‐performance organic light‐emitting diode devices. In this regard, this work offers a brand‐new route for the fast growth of Gr/h‐BN heterostructures with practical scalability and high crystalline quality, thus should propel its wide applications in transparent electrodes, high‐performance electronic devices, and energy harvesting/transition directions.     

Atomically Thin Femtojoule Memristive Device

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary‐type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on‐state current and the switching voltage. Here, the formation of conductive filaments in a material medium with sub‐nanometer thickness formed through the oxidation of atomically thin two‐dimensional boron nitride is studied. The resulting memristive device exhibits sub‐nanometer filamentary switching with sub‐pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultralow energy devices are promising for realizing femtojoule and sub‐femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.     

Enhanced Capacity and Rate Capability of Nitrogen/Oxygen Dual‐Doped Hard Carbon in Capacitive Potassium‐Ion Storage

The intercalation of potassium ions into graphite is demonstrated to be feasible, while the electrochemical performance of potassium‐ion batteries (KIBs) remains unsatisfying. More effort is needed to improve the specific capacity while maintaining a superior rate capability. As an attempt, nitrogen/oxygen dual‐doped hierarchical porous hard carbon (NOHPHC) is introduced as the anode in KIBs by carbonizing and acidizing the NH₂‐MIL‐101(Al) precursor. Specifically, the NOHPHC electrode delivers high reversible capacities of 365 and 118 mA h g^?1 at 25 and 3000 mA g^?1, respectively. The capacity retention reaches 69.5% at 1050 mA g^?1 for 1100 cycles. The reasons for the enhanced electrochemical performance, such as the high capacity, good cycling stability, and superior rate capability, are analyzed qualitatively and quantitatively. Quantitative analysis reveals that mixed mechanisms, including capacitance and diffusion, account for the K‐ion storage, in which the capacitance plays a more important role. Specifically, the enhanced interlayer spacing (0.39 nm) enables the intercalation of large K ions, while the high specific surface area of ≈1030 m² g^?1 and the dual‐heteroatom doping (N and O) are conducive to the reversible adsorption of K ions.     

Changing the Blood Test: Accurate Determination of Mercury(II) in One Microliter of Blood Using Oriented ZnO Nanobelt Array Film Solution‐Gated Transistor Chips

The measurement of ultralow concentrations of heavy metal ions (HMIs) in blood is challenging. A new strategy for the determination of mercury ions (Hg²⁺) based on an oriented ZnO nanobelt (ZnO‐NB) film solution‐gated field‐effect transistor (FET) chip is adopted. The FET chips are fabricated with ZnO‐NB film channels with different orientations utilizing the Langmuir–Blodgett (L–B) assembly technique. The combined simulation and I–V behavior results show that the nanodevice with ZnO‐NBs parallel to the channel has exceptional performance. The sensing capability of the oriented ZnO‐NB film FET chips corresponds to an ultralow minimum detectable level (MDL) of 100 × 10^?12 m in deionized water due to the change in the electrical double layer (EDL) arising from the synergism of the field‐induced effect and the specific binding of Hg²⁺ to the thiol groups (‐SH) on the film surface. Moreover, the prepared FET chips present excellent selectivity toward Hg²⁺, excellent repeatability, and a rapid response time (less than 1 s) for various Hg²⁺ concentrations. The sensing performance corresponds to a low MDL of 10 × 10^?9 m in real samples of a drop of blood.