High‐Efficiency All‐Small‐Molecule Organic Solar Cells Based on an Organic Molecule Donor with Alkylsilyl‐Thienyl Conjugated Side Chains

Two medium‐bandgap p‐type organic small molecules H21 and H22 with an alkylsily‐thienyl conjugated side chain on benzo[1,2‐b:4,5‐b′]dithiophene central units are synthesized and used as donors in all‐small‐molecule organic solar cells (SM‐OSCs) with a narrow‐bandgap n‐type small molecule 2,2′‐((2Z,2′Z)‐((4,4,9,9‐tetrahexyl‐4,9‐dihydro‐s‐indaceno[1,2‐b:5,6‐b′]dithiophene‐2,7‐diyl)bis(methanylylidene))bis(3‐oxo‐2,3‐dihydro‐1H‐indene‐2,1‐diylidene))dimalononitrile (IDIC) as the acceptor. In comparison to H21 with 3‐ethyl rhodanine as the terminal group, H22 with cyanoacetic acid esters as the terminal group shows blueshifted absorption, higher charge‐carrier mobility and better 3D charge pathway in blend films. The power conversion efficiency (PCE) of the SM‐OSCs based on H22:IDIC reaches 10.29% with a higher open‐circuit voltage of 0.942 V and a higher fill factor of 71.15%. The PCE of 10.29% is among the top efficiencies of nonfullerene SM‐OSCs reported in the literature to date.     

Continuous Fabrication of Meter‐Scale Single‐Wall Carbon Nanotube Films and their Use in Flexible and Transparent Integrated Circuits

Single‐wall carbon nanotubes (SWCNTs), especially in the form of large‐area and high‐quality thin films, are a promising material for use in flexible and transparent electronics. Here, a continuous synthesis, deposition, and transfer technique is reported for the fabrication of meter‐scale SWCNT thin films, which have an excellent optoelectrical performance including a low sheet resistance of 65 Ω/? with a transmittance of 90% at a wavelength of 550 nm. Using these SWCNT thin films, high‐performance all‐CNT thin‐film transistors and integrated circuits are demonstrated, including 101‐stage ring oscillators. The results pave the way for the future development of large‐scale, flexible, and transparent electronics based on CNT thin films.     

A Hydrogel‐Film Casting to Fabricate Platelet‐Reinforced Polymer Composite Films Exhibiting Superior Mechanical Properties

The fabrication of mechanically superior polymer composite films with controllable shapes on various scales is difficult. Despite recent research on polymer composites consisting of organic matrices and inorganic materials with layered structures, these films suffer from complex preparations and limited mechanical properties that do not have even integration of high strength, stiffness, and toughness. Herein, a hydrogel‐film casting approach to achieve fabrication of simultaneously strong, stiff, and tough polymer composite films with well‐defined microstructure, inspired from a layer‐by‐layer structure of nacre is reported. Ca²⁺‐crosslinked alginate hydrogels incorporated with platelet‐like alumina particles are dried to form composite films composed of horizontally aligned alumina platelets and alginate matrix with uniformly layered microstructure. Alumina platelets are evenly distributed parallel without precipitations and contribute to synergistic enhancements of strength, stiffness and toughness in the resultant film. Consequentially, Ca²⁺‐crosslinked alginate/alumina (Ca²⁺‐Alg/Alu) films show exceptional tensile strength (267 MPa), modulus (17.9 GPa), and toughness (3.60 MJ m⁻³). Furthermore, the hydrogel‐film casting allows facile preparation of polymer composite films with controllable shapes and various scales. The results suggest an alternative approach to design and prepare polymer composites with the layer‐by‐layer structure for superior mechanical properties.     

Scalable Fabrication of Highly Crystalline Organic Semiconductor Thin Film by Channel‐Restricted Screen Printing toward the Low‐Cost Fabrication of High‐Performance Transistor Arrays

Control over the morphology and crystallinity of small‐molecule organic semiconductor (OSC) films is of key importance to enable high‐performance organic optoelectronic devices. However, such control remains particularly challenging for solution‐processed OSC devices because of the complex crystallization kinetics of small‐molecule OSC materials in the dynamic flow of inks. Here, a simple yet effective channel‐restricted screen‐printing method is reported, which uses small‐molecule OSCs/insulating polymer to yield large‐grained small‐molecule OSC thin‐film arrays with good crystallization and preferred orientation. The use of cross‐linked organic polymer banks produces a confinement effect to trigger the outward convective flow at two sides of the channel by the fast solvent evaporation, which imparts the transport of small‐molecule OSC solutes and promotes the growth of small‐molecule OSC crystals parallel to the channel. The small‐molecule OSC thin‐film array produced by screen printing exhibits excellent performance characteristics with an average mobility of 7.94 cm² V^?1 s^?1 and a maximum mobility of 12.10 cm² V^?1 s^?1, which are on par with its single crystal. Finally, screen printing can be carried out using a flexible substrate, with good performance. These demonstrations bring this robust screen‐printing method closer to industrial application and expand its applicability to various flexible electronics.     

Hydrothermal Coating of Patterned Carbon Nanotube Forest for Structured Lithium‐Ion Battery Electrodes

Controlling the arrangement and interface of nanoparticles is essential to achieve good transfer of charge, heat, or mechanical load. This is particularly challenging in systems requiring hybrid nanoparticle mixtures such as combinations of organic and inorganic materials. This work presents a process to coat vertically aligned carbon nanotube (CNT) forests with metal oxide nanoparticles using microwave‐assisted hydrothermal synthesis. Hydrothermal processes normally damage delicate CNT forests, which is addressed here by a combination of lithographic patterning, transfer printing, and reduction of the synthesis time. This process is applied for the fabrication of structured Li‐ion battery (LIB) electrodes where the aligned CNTs provide a straight electron transport path through the electrode and the hydrothermal coating process is used to coat the CNTs with conversion anode materials for LIBs. These nanoparticles are anchored on the surface of the CNTs and batteries fabricated following this process show a fourfold longer cyclability. Finally, this process is used to create thick electrodes (350 µm) with a gravimetric capacity of over 900 mAh g^?1.     

Metal–Organic Gel‐Derived FexOy/Nitrogen‐Doped Carbon Films for Enhanced Lithium Storage

The development of cost‐effective and flexible electrodes is demanding in the field of energy storage. Herein, flexible Fe_xO_y/nitrogen‐doped carbon films (Fe_xO_y/NC‐MOG) are prepared by facile electrospinning of Fe‐based metal–organic gels (MOGs) followed by high‐temperature carbonization. This approach allows the even mixing of fragile coordination polymers with polyacrylonitrile into flexible films while reserving the structural characteristics of coordination polymers. After thermal treatment, Fe_xO_y/NC‐MOG films possess uniformly distributed Fe_xO_y nanoparticles and larger accessible surface areas than traditional Fe_xO_y‐NC films without MOG. Taking advantage of the unique structure, Fe_xO_y/NC‐MOG exhibits a superior rate performance (449.8 mA h g^?1 at 5000 mA g^–1) and long cycle life (629.3 mA h g^–1 after 500 cycles at 1000 mA g^–1) when used as additive‐free anodes in lithium‐ion batteries.     

Pseudocapacitance of TiO2−x/CNT Anodes for High‐Performance Quasi‐Solid‐State Li‐Ion and Na‐Ion Capacitors

It is challenging for flexible solid‐state hybrid capacitors to achieve high‐energy‐high‐power densities in both Li‐ion and Na‐ion systems, and the kinetics discrepancy between the sluggish faradaic anode and the rapid capacitive cathode is the most critical issue needs to be addressed. To improve Li‐ion/Na‐ion diffusion kinetics, flexible oxygen‐deficient TiO_2?x/CNT composite film with ultrafast electron/ion transport network is constructed as self‐supported and light‐weight anode for a quasi‐solid‐state hybrid capacitor. It is found that the designed porous yolk–shell structure endows large surface area and provides short diffusion length, the oxygen‐deficient composite film can improve electrical conductivity, and enhance ion diffusion kinetic by introducing intercalation pseudocapacitance, therefore resulting in advance electrochemical properties. It exhibits high capacity, excellent rate performance, and long cycle life when utilized as self‐supported anodes for Li‐ion and Na‐ion batteries. When assembled with activated carbon/carbon nanotube (AC/CNT) flexible cathode, using ion conducting gel polymer as the electrolyte, high energy densities of 104 and 109 Wh kg^?1 are achieved at 250 W kg^?1 in quasi‐solid‐state Li‐ion and Na‐ion capacitors (LICs and SICs), respectively. Still, energy densities of 32 and 36 Wh kg^?1 can be maintained at high power densities of 5000 W kg^?1 in LICs and SICs.     

Silica‐Mediated Formation of Nickel Sulfide Nanosheets on CNT Films for Versatile Energy Storage

An effective, nondestructive, and universal strategy to homogeneously modify freestanding carbon nanotube (CNT) films with various active species is essential to achieve functional electrodes for flexible electrochemical energy storage, which is challenging and has attracted considerable research interest. In this work, a generalizable concept, to utilize silicon oxide as the intermediate to uniformly decorate various metal sulfide nanostructures throughout CNT films is reported. Taking nickel sulfide nanosheet/CNT (NS/CNT) films, in which the NS nanosheets are homogeneously attached on the intact few‐walled CNTs, as an example, the sheet‐like NS provides sufficient active sites for redox reactions and the CNT network acts as an efficient electron highway, maintaining the structural integrity of the composite and also buffering volume changes. These merits enable NS/CNT films to meet the requirements of versatile energy storage applications. When used for supercapacitors, a high specific capacitance (2699.7 F g^?1/10 A g^?1), outstanding rate performance at extremely high rates (1527 F g^?1/250 A g^?1), remarkable cycling stability, and excellent flexibility can be achieved, among the best performance so far. Moreover, it also delivers excellent performance in the storage of Li and Na ions, meaning it is also potentially suitable for Li/Na ion batteries.     

Thread‐Like CMOS Logic Circuits Enabled by Reel‐Processed Single‐Walled Carbon Nanotube Transistors via Selective Doping

The realization of large‐area electronics with full integration of 1D thread‐like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread‐like fiber electronic devices can be achieved using a simple reel‐to‐reel process, which is strongly required for low‐cost and scalable manufacturing technology. Here, high‐performance reel‐processed complementary metal‐oxide‐semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical‐doped single‐walled carbon nanotube (SWCNT) transistors. With the introduction of selective n‐type doping and a nonrelief photochemical patterning process, p‐ and n‐type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high‐performance and reliable thread‐like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel‐coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well‐aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p‐ and n‐type SWCNT transistors exhibit field‐effect mobility of 4.03 and 2.15 cm² V^?1 s^?1, respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V.     

Charge‐Trapping‐Induced Non‐Ideal Behaviors in Organic Field‐Effect Transistors

Organic field‐effect transistors (OFETs) with impressively high hole mobilities over 10 cm² V^?1 s^?1 and electron mobilities over 1 cm² V^?1 s^?1 have been reported in the past few years. However, significant non‐ideal electrical characteristics, e.g., voltage‐dependent mobilities, have been widely observed in both small‐molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor‐unrelated, charge‐trapping‐induced non‐ideality in OFETs is reported, and a revised model for the non‐ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping‐induced non‐ideality exists in OFETs with different types of charge carriers (p‐type or n‐type), different types of dielectric materials (inorganic and organic) that contain different functional groups (? OH, ? NH₂, ? COOH, etc.). As fas as it is known, this is the first report for the non‐ideal transport behaviors in OFETs caused by semiconductor‐independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non‐ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs.     

Aligning Solution‐Derived Carbon Nanotube Film with Full Surface Coverage for High‐Performance Electronics Applications

The main challenge for application of solution‐derived carbon nanotubes (CNTs) in high performance field‐effect transistor (FET) is how to align CNTs into an array with high density and full surface coverage. A directional shrinking transfer method is developed to realize high density aligned array based on randomly orientated CNT network film. Through transferring a solution‐derived CNT network film onto a stretched retractable film followed by a shrinking process, alignment degree and density of CNT film increase with the shrinking multiple. The quadruply shrunk CNT films present well alignment, which is identified by the polarized Raman spectroscopy and electrical transport measurements. Based on the high quality and high density aligned CNT array, the fabricated FETs with channel length of 300 nm present ultrahigh performance including on‐state current I_on of 290 µA µm^?1 (V_ds = ?1.5 V and V_gs = ?2 V) and peak transconductance g_m of 150 µS µm^?1, which are, respectively, among the highest corresponding values in the reported CNT array FETs. High quality and high semiconducting purity CNT arrays with high density and full coverage obtained through this method promote the development of high performance CNT‐based electronics.     

Room‐Temperature Solution‐Synthesized p‐Type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics

Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility (µ_FE) of 0.44 cm² V^?1 s^?1 and on/off current ratio of 5 × 10². Furthermore, µ_FE increases to 1.93 cm² V^?1 s^?1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO₂ dielectric layer replacing traditional SiO₂. Transparent complementary inverters composed of p‐type CuI and n‐type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution‐processed inorganic p‐type semiconductor inks and related electronics.     

Low‐Temperature Soft‐Cover Deposition of Uniform Large‐Scale Perovskite Films for High‐Performance Solar Cells

Large‐scale high‐quality perovskite thin films are crucial to produce high‐performance perovskite solar cells. However, for perovskite films fabricated by solvent‐rich processes, film uniformity can be prevented by convection during thermal evaporation of the solvent. Here, a scalable low‐temperature soft‐cover deposition (LT‐SCD) method is presented, where the thermal convection‐induced defects in perovskite films are eliminated through a strategy of surface tension relaxation. Compact, homogeneous, and convection‐induced‐defects‐free perovskite films are obtained on an area of 12 cm², which enables a power conversion efficiency (PCE) of 15.5% on a solar cell with an area of 5 cm². This is the highest efficiency at this large cell area. A PCE of 15.3% is also obtained on a flexible perovskite solar cell deposited on the polyethylene terephthalate substrate owing to the advantage of presented low‐temperature processing. Hence, the present LT‐SCD technology provides a new non‐spin‐coating route to the deposition of large‐area uniform perovskite films for both rigid and flexible perovskite devices.     

Electric‐Field‐Controlled Dopant Distribution in Organic Semiconductors

Stable electrical doping of organic semiconductors is fundamental for the functionality of high performance devices. It is known that dopants can be subjected to strong diffusion in certain organic semiconductors. This work studies the impact of operating conditions on thin films of the polymer poly(3‐hexylthiophene) (P3HT) and the small molecule Spiro‐MeOTAD, doped with two differently sized p‐type dopants. The negatively charged dopants can drift upon application of an electric field in thin films of doped P3HT over surprisingly large distances. This drift is not observed in the small molecule Spiro‐MeOTAD. Upon the dopants’ directional movement in P3HT, a dedoped region forms at the negatively biased electrode, increasing the overall resistance of the thin film. In addition to electrical measurements, optical microscopy, spatially resolved infrared spectroscopy, and scanning Kelvin probe microscopy are used to investigate the drift of dopants. Dopant mobilities of 10^?9 to 10^?8 cm² V^?1 s^?1 are estimated. This drift over several micrometers is reversible and can be controlled. Furthermore, this study presents a novel memory device to illustrate the applicability of this effect. The results emphasize the importance of dynamic processes under operating conditions that must be considered even for single doped layers.     

Construction of Large‐Area Ultrathin Conductive Metal–Organic Framework Films through Vapor‐Induced Conversion

On account of unique characteristics, the integration of metal–organic frameworks as active materials in electronic devices attracts more and more attention. The film thickness, uniformity, area, and roughness are all fatal factors limiting the development of electrical and optoelectronic applications. However, research focused on ultrathin free‐standing films is in its infancy. Herein, a new method, vapor‐induced method, is designed to construct centimeter‐sized Ni₃(HITP)₂ films with well‐controlled thickness (7, 40, and 92 nm) and conductivity (0.85, 2.23, and 22.83 S m^?1). Further, traditional transfer methods are tactfully applied to metal–organic graphene analogue (MOGA) films. In order to maintain the integrity of films, substrates are raised up from bottom of water to hold up films. The stripping method greatly improves the surface roughness R_q (root mean square roughness) without loss of conductivity and endows the film with excellent elasticity and flexibility. After 1000 buckling cycles, the conductance shows no obvious decrease. Therefore, the work may open up a new avenue for flexible electronic and magnetic devices based on MOGA.     

High‐Performance Flexible Photodetectors based on High‐Quality Perovskite Thin Films by a Vapor–Solution Method

Organometal halide perovskites are new light‐harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low‐temperature process capability. However, the preparation of high‐quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor–solution method is developed to achieve uniform and pinhole‐free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as‐prepared high‐quality perovskite thin films, high‐performance flexible photodetectors (PDs) are constructed, which display a nR value of 81 A W^?1 at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin‐film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high‐quality perovskite thin films opens up a new avenue to develop high‐performance flexible optoelectronic devices.     

Material Design of p‐Type Transparent Amorphous Semiconductor,Cu–Sn–I

Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n‐type TAS materials with excellent performance, such as amorphous In‐Ga‐Zn‐O (a‐IGZO), are already known, no complementary p‐type TAS has been realized to date. Here, a material design concept for p‐type TAS materials is proposed utilizing the pseudo s‐orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn‐containing CuI (a‐CuSnI) thin film is reported as an example. The resulting a‐CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm² V^?1 s^?1 is obtained, which is comparable with that of conventional n‐type TAS.     

FA‐Assistant Iodide Coordination in Organic–Inorganic Wide‐Bandgap Perovskite with Mixed Halides

Mixed‐halide wide‐bandgap perovskites are key components for the development of high‐efficiency tandem structured devices. However, mixed‐halide perovskites usually suffer from phase‐impurity and high defect density issues, where the causes are still unclear. By using in situ photoluminescence (PL) spectroscopy, it is found that in methylammonium (MA⁺)‐based mixed‐halide perovskites, MAPb(I_0.6Br_0.4)₃, the halide composition of the spin‐coated perovskite films is preferentially dominated by the bromide ions (Br^?). Additional thermal energy is required to initiate the insertion of iodide ions (I^?) to achieve the stoichiometric balance. Notably, by incorporating a small amount of formamidinium ions (FA⁺) in the precursor solution, it can effectively facilitate the I^? coordination in the perovskite framework during the spin‐coating and improve the composition homogeneity of the initial small particles. The aggregation of these homogenous small particles is found to be essential to achieve uniform and high‐crystallinity perovskite film with high Br^? content. As a result, high‐quality MA_0.9FA_0.1Pb(I_0.6Br_0.4)₃ perovskite film with a bandgap (E_g) of 1.81 eV is achieved, along with an encouraging power‐conversion‐efficiency of 17.1% and open‐circuit voltage (V_oc) of 1.21 V. This work also demonstrates the in situ PL can provide a direct observation of the dynamic of ion coordination during the perovskite crystallization.     

2D Molecular Crystal Bilayer p–n Junctions: A General Route toward High‐Performance and Well‐Balanced Ambipolar Organic Field‐Effect Transistors

Ambipolar organic field‐effect transistors (OFETs) are vital for the construction of high‐performance all‐organic digital circuits. The bilayer p–n junction structure, which is composed of separate layers of p‐ and n‐type organic semiconductors, is considered a promising way to realize well‐balanced ambipolar charge transport. However, this approach suffers from severely reduced mobility due to the rough interface between the polycrystalline thin films of p‐ and n‐type organic semiconductors. Herein, 2D molecular crystal (2DMC) bilayer p–n junctions are proposed to construct high‐performance and well‐balanced ambipolar OFETs. The molecular‐scale thickness of the 2DMC ensures high injection efficiency and the atomically flat surface of the 2DMC leads to high‐quality p‐ and n‐layer interfaces. Moreover, by controlling the layer numbers of the p‐ and n‐type 2DMCs, the electron and hole mobilities are tuned and well‐balanced ambipolar transport is accomplished. The hole and electron mobilities reach up to 0.87 and 0.82 cm² V^?1 s^?1, respectively, which are the highest values among organic single‐crystalline double‐channel OFETs measured in ambient air. This work provides a general route to construct high‐performance and well‐balanced ambipolar OFETs based on available unipolar materials.