Free‐Standing Polyurethane Nanofiber/Nets Air Filters for Effective PM Capture

The filtration performance and light transmittance of nanofiber air filters are restricted by their thick fiber diameter, large pore size, and substrate dependence, which can be solved by constructing substrate‐free fibrous membranes with true nanoscale diameters and ultrathin thicknesses, however, it has proven to be extremely challenging. Herein, a roust approach is presented to create free‐standing polyurethane (PU) nanofiber/nets air filters composed of bonded nanofibers and 2D nanonets for particular matter (PM) capture via combining electrospinning/netting technique and facile peel off process from designed substrates. This strategy causes widely distributed Steiner‐tree structured nanonets with diameters of ≈20 nm and bonded scaffold nanofibers to assemble into ultrathin membranes with small pore size, high porosity, and robust mechanical strength on a large scale based on ionic liquid inspiration and surface structure optimization of receiver substrates. As a consequence, the resulting free‐standing PU nanofiber/nets filters exhibit high PM_1–0.5 removal efficiency of >99.00% and PM_2.5–1 removal efficiency of >99.73%, maintaining high light transmittance of ≈70% and low pressure drop of 28 Pa; even achieve >99.97% removal efficiency with ≈40% transmittance for PM_0.3 filtration, and robust purification capacity for real smoke PM_2.5, making them promising high‐efficiency and transparent filtration materials for various filtration and separation applications.     

A Controlled Design of Ripple‐Like Polyamide‐6 Nanofiber/Nets Membrane for High‐Efficiency Air Filter

The filtration capacity of fibrous media for airborne particles is restricted by their thick diameter, low porosity, and limited frontal area. The ability to solve this problem would have broad technological implications for various air filtration applications; despite many past efforts, it remains a great challenge to achieve. Herein, a facile and scalable strategy to fabricate the ripple‐like polyamide‐6 nanofiber/nets (PA‐6 NF/N) air filter via combining electrospinning/netting technique with receiving substrate design is demonstrated. This proposed approach allows the scaffold filaments to orderly embed into 2D PA‐6 nanonets layer with Steiner‐tree structures and nanoscale diameter of ≈20 nm, resulting in the ripple‐like membrane with extremely small pore size, highly porous structure, and hugely extended frontal surface, by facilely adjusting its pleat span and pleat pitch. These unique structural advantages enable the ripple‐like PA‐6 NF/N filter to filtrate the ultrafine particles with high removal efficiency of 99.996%, low air resistance of 95 Pa, and robust quality factor of >0.11 Pa^?1; using its superlight weight of 0.9 g m^?2 and physical sieving manner. This approach has the potentialities to give rise to a novel generation of filter media displaying enhanced filtration capacity for various applications thanks to their nanoscale features and designed macrostructures.     

Co(OH)2 Nanoparticle‐Encapsulating Conductive Nanowires Array: Room‐Temperature Electrochemical Preparation for High‐Performance Water Oxidation Electrocatalysis

It is highly desired but still remains challenging to design and develop a Co‐based nanoparticle‐encapsulated conductive nanoarray at room temperature for high‐performance water oxidation electrocatalysis. Here, it is reported that room‐temperature anodization of a Co(TCNQ)₂ (TCNQ = tetracyanoquinodimethane) nanowire array on copper foam at alkaline pH leads to in situ electrochemcial oxidation of TCNQ^? into water‐insoluable TCNQ nanoarray embedding Co(OH)₂ nanoparticles. Such Co(OH)₂‐TCNQ/CF shows superior catalytic activity for water oxidation and demands only a low overpotential of 276 mV to drive a geometrical current density of 25 mA cm^?2 in 1.0 m KOH. Notably, it also demonstrates strong long‐term electrochemical durability with its activity being retrained for at least 25 h, a high turnover frequency of 0.97 s^?1 at an overpotential of 450 mV and 100% Faradic efficiency. This study provides an exciting new method for the rational design and development of a conductive TCNQ‐based nanoarray as an interesting 3D material for advanced electrochemical applications.     

Monodisperse CNT Microspheres for High Permeability and Efficiency Flow‐Through Filtration Applications

Carbon nanotube (CNT)‐based filters have the potential to revolutionize water treatment because of their high capacity and fast kinetics in sorption of organic, inorganic, and biological pollutants. To date, CNT filters either rely on CNTs dispersed in liquids, which are difficult to recover and cause safety concerns, or on CNT buckypaper, which offers high efficiency, but suffers from an intrinsic trade‐off between filter permeability and capacity. Here, a new approach is presented that bypasses this trade‐off and achieves buckypaper‐like efficiency combined with filter‐column‐like permeability and capacity. For this, CNTs are first assembled into porous microspheres and then are packed into microfluidic column filters. These microcolumns exhibit large flow‐through filtration efficiencies, while maintaining membrane permeabilities an order of magnitude larger then CNT buckypaper and specific permeabilities double that of activated carbon for similar flowrates (232 000 L m^?2 h^?1 bar^?1, 1.23 × 10^?12 m²). Moreover, in a test to remove sodium dodecyl sulfate (SDS) from water, these microstructured CNT columns outperform activated carbon columns. This improved filtration efficiency and permeability is an important step toward a broader implementation of CNT‐based filtration devices.     

Room‐Temperature Solution‐Synthesized p‐Type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics

Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility (µ_FE) of 0.44 cm² V^?1 s^?1 and on/off current ratio of 5 × 10². Furthermore, µ_FE increases to 1.93 cm² V^?1 s^?1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO₂ dielectric layer replacing traditional SiO₂. Transparent complementary inverters composed of p‐type CuI and n‐type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution‐processed inorganic p‐type semiconductor inks and related electronics.     

纺锤状纤维结构的设计及其PM2.5过滤性能研究

城市雾霾,特别是其中的PM_2.5颗粒(当量直径≤2.5μm),因其自身危害及其携带的病原体对公共健康具有严重威胁而被人们广泛关注.静电纺丝纳米纤维作为空气过滤膜实现PM_2.5高效捕获是国内外研究热点,但现有的纺丝滤膜仍存在无法兼顾高过滤效率和低空气阻力的问题.根据蛛丝微观结构特点,采用静电纺丝技术,通过在纺丝纤维内部引入不同形貌黏土矿物及其微球前驱体的策略,可实现复合纤维及其滤膜材料的多级结构构筑和微观形貌调控,成功设计具有纺锤状埃洛石微球节点的仿生纳米纤维滤膜材料.其纤维表面富含亲水基团及活性位点,粗糙的表面形貌具有高表面能及PM_2.5颗粒的强捕获性.对比纯纺丝滤膜(62.59μm),纺锤状节点滤膜具有蓬松的纤维膜层间架构(74.17μm)及窄尺寸的表面孔隙,可实现稳定高效的PM_2.5过滤效率(>85.0%)及持续低压差阻力(~39 Pa).本文探索了纳米纤维的官能化、多层次结构构建和微观形貌调控对纺丝滤膜过滤性能的影响及其过滤机制理论,为其他新型高性能高分子纳米纤维复合材料的设计和开发提供了借鉴.     

An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter

The development of low‐cost, flexible electronic devices is subordinated to the advancement in solution‐based and low‐temperature‐processable semiconducting materials, such as colloidal quantum dots (QDs) and single‐walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high‐performance complementary metal‐oxide‐semiconductor (CMOS)‐like inverters is demonstrated. The n‐type field effect transistors (FETs) based on I^? capped PbS QDs (V _th = 0.2 V, on/off = 10⁵, S _S‐th = 114 mV dec^?1, µ _e = 0.22 cm² V^?1 s^?1) and the p‐type FETs with tailored parameters based on low‐density random network of SWCNTs (V _th = ?0.2 V, on/off > 10⁵, S _S‐th = 63 mV dec^?1, µ _h = 0.04 cm² V^?1 s^?1) are integrated on the same substrate in order to obtain high‐performance hybrid inverters. The inverters operate in the sub‐1 V range (0.9 V) and have high gain (76 V/V), large maximum‐equal‐criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).     

Bath Electrospinning of Continuous and Scalable Multifunctional MXene‐Infiltrated Nanoyarns

Electroactive yarns that are stretchable are desired for many electronic textile applications, including energy storage, soft robotics, and sensing. However, using current methods to produce these yarns, achieving high loadings of electroactive materials and simultaneously demonstrating stretchability is a critical challenge. Here, a one‐step bath electrospinning technique is developed to effectively capture Ti₃C₂T_x MXene flakes throughout continuous nylon and polyurethane (PU) nanofiber yarns (nanoyarns). With up to ≈90 wt% MXene loading, the resulting MXene/nylon nanoyarns demonstrate high electrical conductivity (up to 1195 S cm^?1). By varying the flake size and MXene concentration, nanoyarns achieve stretchability of up to 43% (MXene/nylon) and 263% (MXene/PU). MXene/nylon nanoyarn electrodes offer high specific capacitance in saturated LiClO₄ electrolyte (440 F cm^?3 at 5 mV s^?1), with a wide voltage window of 1.25 V and high rate capability (72% between 5 and 500 mV s^?1). As strain sensors, MXene/PU yarns demonstrate a wide sensing range (60% under cyclic stretching), high sensitivity (gauge factor of ≈17 in the range of 20–50% strain), and low drift. Utilizing the stretchability of polymer nanofibers and the electrical and electrochemical properties of MXene, MXene‐based nanoyarns demonstrate potential in a wide range of applications, including stretchable electronics and body movement monitoring.     

Magnesium Storage Performance and Mechanism of 2D‐Ultrathin Nanosheet‐Assembled Spinel MgIn2S4 Cathode for High‐Temperature Mg Batteries

Magnesium batteries have the potential to be a next generation battery with large capability and high safety, owing to the high abundance, great volumetric energy density, and reversible dendrite‐free capability of Mg anodes. However, the lack of a stable high‐voltage electrolyte, and the sluggish Mg‐ion diffusion in lattices and through interfaces limit the practical uses of Mg batteries. Herein, a spinel MgIn₂S₄ microflower‐like material assembled by 2D‐ultrathin (≈5.0 nm) nanosheets is reported and first used as a cathode material for high‐temperature Mg batteries with an ionic liquid electrolyte. The nonflammable ionic liquid electrolyte ensure the safety under high temperatures. As prepared MgIn₂S₄ exhibits wide‐temperature‐range adaptability (50–150 °C), ultrahigh capacity (≈500 mAh g^?1 under 1.2 V vs Mg/Mg²⁺), fast Mg²⁺ diffusibility (≈2.0 × 10^?8 cm² s^?1), and excellent cyclability (without capacity decay after 450 cycles). These excellent electrochemical properties are due to the fast kinetics of magnesium by the 2D nanosheets spinel structure and safe high‐temperature operation environment. From ex situ X‐ray diffraction and transmission electron microscopy measurements, a conversion reaction of the Mg²⁺ storage mechanism is found. The excellent performance and superior security make it promising in high‐temperature batteries for practical applications.     

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free,Low‐Temperature Direct Growth

The transfer‐free direct growth of high‐performance materials and devices can enable transformative new technologies. Here, room‐temperature field‐effect hole mobilities as high as 707 cm² V^?1 s^?1 are reported, achieved using transfer‐free, low‐temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO₂/Si. The Te nanostructures exhibit significantly higher device performance than other low‐temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high‐performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO₂/Si and HfO₂. The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer‐free direct growth of high‐mobility Te devices can enable major technological breakthroughs, as the low‐temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications.     

Gradient‐Distributed Nucleation Seeds on Conductive Host for a Dendrite‐Free and High‐Rate Lithium Metal Anode

Much attention is paid to metal lithium as a hopeful negative material for reversible batteries with a high specific capacity. Although applying 3D hosts can relieve the dendrite growth to some extent, gradient‐distributed lithium ion in 3D uniform hosts still induces uncontrolled lithium dendrites growth, especially at high lithium capacity and high current density. Herein, a 3D conductive carbon nanofiber framework with gradient‐distributed ZnO particles as nucleation seeds (G‐CNF) to regulate lithium deposition is proposed. Based on such a unique structure, the G‐CNF electrode exhibits a high average Coulombic efficiency (CE) of 98.1% for 700 cycles at 0.5 mA cm^?2. Even at 5 mA cm^?2, the G‐CNF electrode performs a stable cycling process and high CE of 96.0% for over 200 cycles. When the lithium‐deposited G‐CNF (G‐CNF‐Li) anode is applied in a full cell with a commercial LiFePO₄ cathode, it exhibits a stable capacity of 115 mAh g^?1 and high retention of 95.7% after 300 cycles. Through inducing the gradient‐distributed nucleation seeds to counter the existing Li‐ion concentration polarization, a uniform and stable lithium deposition process in the 3D host is achieved even under the condition of high current density.     

Dopant‐Free Hole‐Transporting Materials for Stable and Efficient Perovskite Solar Cells

Molecularly engineered novel dopant‐free hole‐transporting materials for perovskite solar cells (PSCs) combined with mixed‐perovskite (FAPbI₃)_0.85(MAPbBr₃)_0.15 (MA: CH₃NH₃⁺, FA: NH=CHNH₃⁺) that exhibit an excellent power conversion efficiency of 18.9% under AM 1.5 conditions are investigated. The mobilities of FA‐CN, and TPA‐CN are determined to be 1.2 × 10^?4 cm² V^?1 s^?1 and 1.1 × 10^?4 cm² V^?1 s^?1, respectively. Exceptional stability up to 500 h is measured with the PSC based on FA‐CN. Additionally, it is found that the maximum power output collected after 1300 h remained 65% of its initial value. This opens up new avenue for efficient and stable PSCs exploring new materials as alternatives to Spiro‐OMeTAD.     

Mesopore‐Induced Ultrafast Na+‐Storage in T‐Nb2O5/Carbon Nanofiber Films toward Flexible High‐Power Na‐Ion Capacitors

Hybrid Na‐ion capacitors (NICs) are receiving considerable interest because they combine the merits of both batteries and supercapacitors and because of the low‐cost of sodium resources. However, further large‐scale deployment of NICs is impeded by the sluggish diffusion of Na⁺ in the anode. To achieve rapid redox kinetics, herein the controlled fabrication of mesoporous orthorhombic‐Nb₂O₅ (T‐Nb₂O₅)/carbon nanofiber (CNF) networks is demonstrated via in situ SiO₂‐etching. The as‐obtained mesoporous T‐Nb₂O₅ (m‐Nb₂O₅)/CNF membranes are mechanically flexible without using any additives, binders, or current collectors. The in situ formed mesopores can efficiently increase Na⁺‐storage performances of the m‐Nb₂O₅/CNF electrode, such as excellent rate capability (up to 150 C) and outstanding cyclability (94% retention after 10 000 cycles at 100 C). A flexible NIC device based on the m‐Nb₂O₅/CNF anode and the graphene framework (GF)/mesoporous carbon nanofiber (mCNF) cathode, is further constructed, and delivers an ultrahigh power density of 60 kW kg^?1 at 55 Wh kg^?1 (based on the total weight of m‐Nb₂O₅/CNF and GF/mCNF). More importantly, owing to the free‐standing flexible electrode configuration, the m‐Nb₂O₅/CNF//GF/mCNF NIC exhibits high volumetric energy and power densities (11.2 mWh cm^?3, 5.4 W cm^?3) based on the full device, which holds great promise in a wide variety of flexible electronics.     

Multilayer Amorphous‐Si‐B‐C‐N/γ‐Al2O3/α‐Al2O3 Membranes for Hydrogen Purification

The hydrogen and carbon monoxide separation is an important step in the hydrogen production process. If H₂ can be selectively removed from the product side during hydrogen production in membrane reactors, then it would be possible to achieve complete CO conversion in a single‐step under high temperature conditions. In the present work, the multilayer amorphous‐Si‐B‐C‐N/γ‐Al₂O₃/α‐Al₂O₃ membranes with gradient porosity have been realized and assessed with respect to the thermal stability, geometry of pore space and H₂/CO permeance. The α‐Al₂O₃ support has a bimodal pore‐size distribution of about 0.64 and 0.045 µm being macroporous and the intermediate γ‐Al₂O₃ layer—deposited from boehmite colloidal dispersion—has an average pore‐size of 8 nm being mesoporous. The results obtained by the N₂‐adsorption method indicate a decrease in the volume of micropores—0.35 vs. 0.75 cm³ g^?1—and a smaller pore size ?6.8 vs. 7.4 Å—in membranes with the intermediate mesoporous γ‐Al₂O₃ layer if compared to those without. The three times Si‐B‐C‐N coated multilayer membranes show higher H₂/CO permselectivities of about 10.5 and the H₂ permeance of about 1.05 × 10^?8 mol m^?2 s^?1 Pa^?1. If compared to the state of the art of microporous membranes, the multilayer Si‐B‐C‐N/γ‐Al₂O₃/α‐Al₂O₃ membranes are appeared to be interesting candidates for hydrogen separation because of their tunable nature and high‐temperature and high‐pressure stability.     

Polymer Doping Enables a Two‐Dimensional Electron Gas for High‐Performance Homojunction Oxide Thin‐Film Transistors

High‐performance solution‐processed metal oxide (MO) thin‐film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In₂O₃) and polyethylenimine (PEI)‐doped In₂O₃ (In₂O₃:x% PEI, x = 0.5–4.0 wt%) as the channel layer. A two‐dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In₂O₃ and PEI‐In₂O₃ via work function tuning of the In₂O₃:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In₂O₃) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm² V^?1 s^?1 on a 300 nm SiO₂ gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In₂O₃ materials, which achieve a maximum mobility of ≈4 cm² V^?1 s^?1. Furthermore, a mobility as high as 30 cm² V^?1 s^?1 is achieved on a high‐k ZrO₂ dielectric in the homojunction devices. This is the first demonstration of 2DEG‐based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.     

Large‐Scale Growth and Field‐Effect Transistors Electrical Engineering of Atomic‐Layer SnS2

2D layers of metal dichalcogenides are of considerable interest for high‐performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS₂ nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large‐size and high‐quality SnS₂ atomic layers still remains a challenge. Herein, a salt‐assisted chemical vapor deposition method is provided to synthesize atomic‐layer SnS₂ with a large crystal size up to 410 µm and good uniformity. Particularly, the as‐fabricated SnS₂ nanosheet‐based field‐effect transistors (FETs) show high mobility (2.58 cm² V^?1 s^?1) and high on/off ratio (≈10⁸), which is superior to other reported SnS₂‐based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron–phonon scattering with the temperature. Moreover, SnS₂ can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS₂ endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.     

Isoindigo‐Based Polymers with Small Effective Masses for High‐Mobility Ambipolar Field‐Effect Transistors

So far, most of the reported high‐mobility conjugated polymers are p‐type semiconductors. By contrast, the advances in high‐mobility ambipolar polymers fall greatly behind those of p‐type counterparts. Instead of unipolar p‐type and n‐type materials, ambipolar polymers, especially balanced ambipolar polymers, are potentially serviceable for easy‐fabrication and low‐cost complementary metal‐oxide‐semiconductor circuits. Therefore, it is a critical issue to develop high‐mobility ambipolar polymers. Here, three isoindigo‐based polymers, PIID‐2FBT , P1FIID‐2FBT , and P2FIID‐2FBT are developed for high‐performance ambipolar organic field‐effect transistors. After the incorporation of fluorine atoms, the polymers exhibit enhanced coplanarity, lower energy levels, higher crystallinity, and thus increased µ _e. P2FIID‐2FBT exhibits n‐type dominant performance with a µ _e of 9.70 cm² V^?1 s^?1. Moreover, P1FIID‐2FBT exhibits a highly balanced µ _h and µ _e of 6.41 and 6.76 cm² V^?1 s^?1, respectively, which are among the highest values for balanced ambipolar polymers. Moreover, a concept “effective mass” is introduced to further study the reasons for the high performance of the polymers. All the polymers have small effective masses, indicating good intramolecular charge transport. The results demonstrate that high‐mobility ambipolar semiconductors can be obtained by designing polymers with fine‐tuned energy levels, small effective masses, and high crystallinity.     

A 3D Lithiophilic Mo2N‐Modified Carbon Nanofiber Architecture for Dendrite‐Free Lithium‐Metal Anodes in a Full Cell

The pursuit for high‐energy‐density batteries has inspired the resurgence of metallic lithium (Li) as a promising anode, yet its practical viability is restricted by the uncontrollable Li dendrite growth and huge volume changes during repeated cycling. Herein, a new 3D framework configured with Mo₂N‐mofidied carbon nanofiber (CNF) architecture is established as a Li host via a facile fabrication method. The lithiophilic Mo₂N acts as a homogeneously pre‐planted seed with ultralow Li nucleation overpotential, thus spatially guiding a uniform Li nucleation and deposition in the matrix. The conductive CNF skeleton effectively homogenizes the current distribution and Li‐ion flux, further suppressing Li‐dendrite formation. As a result, the 3D hybrid Mo₂N@CNF structure facilitates a dendrite‐free morphology with greatly alleviated volume expansion, delivering a significantly improved Coulombic efficiency of ≈99.2% over 150 cycles at 4 mA cm^?2. Symmetric cells with Mo₂N@CNF substrates stably operate over 1500 h at 6 mA cm^?2 for 6 mA h cm^?2. Furthermore, full cells paired with LiNi_0.8Co_0.1Mn_0.1O₂ (NMC811) cathodes in conventional carbonate electrolytes achieve a remarkable capacity retention of 90% over 150 cycles. This work sheds new light on the facile design of 3D lithiophilic hosts for dendrite‐free lithium‐metal anodes.     

A Phosphanthrene Oxide Host with Close Sphere Packing for Ultralow‐Voltage‐Driven Efficient Blue Thermally Activated Delayed Fluorescence Diodes

A phosphanthrene oxide host, 5,10‐diphenyl‐phosphanthrene 5,10‐dioxide ( DPDPO₂A ), with intra‐ and intermolecular hydrogen bonds achieves spheroidal cis ‐configuration and close sphere packing. DPDPO₂A realizes effective exciton suppression and excellent and balanced carrier transporting ability, both at the same time, demonstrating favorable photoluminescence quantum yield of 84% from its blue thermally activated delayed fluorescence (TADF) dye, namely bis[4‐(9,9‐dimethyl‐9,10‐dihydroacridine) phenyl]sulfone, doped films and high electron and hole mobility at the level of 10^?4 and 10^?5 cm² V^?1 s^?1, respectively. DPDPO₂A endows its blue TADF devices with record‐low driving voltages, e.g., turn‐on voltage of 2.5 V, and the state‐of‐the‐art efficiencies with maxima of 22.5% for external quantum efficiency and 52.9 lm W^?1 for power efficiency, which is the best comprehensive performance to date of ultralow‐voltage‐driven blue TADF diodes.     

Highly Luminescent 2D‐Type Slab Crystals Based on a Molecular Charge‐Transfer Complex as Promising Organic Light‐Emitting Transistor Materials

A new 2:1 donor (D):acceptor (A) mixed‐stacked charge‐transfer (CT) cocrystal comprising isometrically structured dicyanodistyrylbenzene‐based D and A molecules is designed and synthesized. Uniform 2D‐type morphology is manifested by the exquisite interplay of intermolecular interactions. In addition to its appealing structural features, unique optoelectronic properties are unveiled. Exceptionally high photoluminescence quantum yield (Φ _F ≈ 60%) is realized by non‐negligible oscillator strength of the S₁ transition, and rigidified 2D‐type structure. Moreover, this luminescent 2D‐type CT crystal exhibits balanced ambipolar transport (µ _h and µ _e of ≈10^?4 cm² V^?1 s^?1). As a consequence of such unique optoelectronic characteristics, the first CT electroluminescence is demonstrated in a single active‐layered organic light‐emitting transistor (OLET) device. The external quantum efficiency of this OLET is as high as 1.5% to suggest a promising potential of luminescent mixed‐stacked CT cocrystals in OLET applications.