Fused Hexacyclic Nonfullerene Acceptor with Strong Near‐Infrared Absorption for Semitransparent Organic Solar Cells with 9.77% Efficiency

A fused hexacyclic electron acceptor, IHIC, based on strong electron‐donating group dithienocyclopentathieno[3,2‐b ]thiophene flanked by strong electron‐withdrawing group 1,1‐dicyanomethylene‐3‐indanone, is designed, synthesized, and applied in semitransparent organic solar cells (ST‐OSCs). IHIC exhibits strong near‐infrared absorption with extinction coefficients of up to 1.6 × 10⁵m ^?1 cm^?1, a narrow optical bandgap of 1.38 eV, and a high electron mobility of 2.4 × 10^?3 cm² V^?1 s^?1. The ST‐OSCs based on blends of a narrow‐bandgap polymer donor PTB7‐Th and narrow‐bandgap IHIC acceptor exhibit a champion power conversion efficiency of 9.77% with an average visible transmittance of 36% and excellent device stability; this efficiency is much higher than any single‐junction and tandem ST‐OSCs reported in the literature.     

Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility

2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly hampered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe₂ can be an alternative choice owing to its smaller band gap ≈1 eV from bulk to monolayer and high carrier mobility. Here, a MoTe₂/graphene heterostructure photodetector is demonstrated for efficient near‐infrared (NIR) light detection. The devices achieve a high responsivity of ≈970.82 A W^?1 (at 1064 nm) and broadband photodetection (visible‐1064 nm). Because of the effective photogating effect induced by electrons trapped in the localized states of MoTe₂, the devices demonstrate an extremely high photoconductive gain of 4.69 × 10⁸ and detectivity of 1.55 × 10¹¹ cm Hz^1/2 W^?1. Moreover, flexible devices based on the MoTe₂/graphene heterostructure on flexible substrate also retains a good photodetection ability after thousands of times bending test (1.2% tensile strain), with a high responsivity of ≈60 A W^?1 at 1064 nm at V _DS = 1 V, which provides a promising platform for highly efficient, flexible, and low cost broadband NIR photodetectors.     

Deep Blue Phosphorescent Organic Light‐Emitting Diodes with CIEy Value of 0.11 and External Quantum Efficiency up to 22.5%

Organic light‐emitting diodes (OLEDs) based on red and green phosphorescent iridium complexes are successfully commercialized in displays and solid‐state lighting. However, blue ones still remain a challenge on account of their relatively dissatisfactory Commission International de L'Eclairage (CIE) coordinates and low efficiency. After analyzing the reported blue iridium complexes in the literature, a new deep‐blue‐emitting iridium complex with improved photoluminescence quantum yield is designed and synthesized. By rational screening host materials showing high triplet energy level in neat film as well as the OLED architecture to balance electron and hole recombination, highly efficient deep‐blue‐emission OLEDs with a CIE at (0.15, 0.11) and maximum external quantum efficiency (EQE) up to 22.5% are demonstrated. Based on the transition dipole moment vector measurement with a variable‐angle spectroscopic ellipsometry method, the ultrahigh EQE is assigned to a preferred horizontal dipole orientation of the iridium complex in doped film, which is beneficial for light extraction from the OLEDs.     

Interface Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with Efficiency over 14%

In this work, a SnO₂/ZnO bilayered electron transporting layer (ETL) aimed to achieve low energy loss and large open‐circuit voltage (V_oc) for high‐efficiency all‐inorganic CsPbI₂Br perovskite solar cells (PVSCs) is introduced. The high‐quality CsPbI₂Br film with regular crystal grains and full coverage can be realized on the SnO₂/ZnO surface. The higher‐lying conduction band minimum of ZnO facilitates desirable cascade energy level alignment between the perovskite and SnO₂/ZnO bilayered ETL with superior electron extraction capability, resulting in a suppressed interfacial trap‐assisted recombination with lower charge recombination rate and greater charge extraction efficiency. The as‐optimized all‐inorganic PVSC delivers a high V_oc of 1.23 V and power conversion efficiency (PCE) of 14.6%, which is one of the best efficiencies reported for the Cs‐based all‐inorganic PVSCs to date. More importantly, decent thermal stability with only 20% PCE loss is demonstrated for the SnO₂/ZnO‐based CsPbI₂Br PVSCs after being heated at 85 °C for 300 h. These findings provide important interface design insights that will be crucial to further improve the efficiency of all‐inorganic PVSCs in the future.     

High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Graphene is a promising candidate material for high‐speed and ultra‐broadband photodetectors. However, graphene‐based photodetectors suffer from low photoreponsivity and I_light/I_dark ratios due to their negligible‐gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW^?1 and I_light/I_dark ratio of 5 × 10², while the photoresponsivity and I_light/I_dark ratio of graphene infrared photodetectors are 0.1 mAW^?1 and 1, respectively. The Fermi level (E_F ) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back‐gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene‐based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.     

Flexible Organic/Inorganic Hybrid Near‐Infrared Photoplethysmogram Sensor for Cardiovascular Monitoring

Wearable photoplethysmogram (PPG) sensors offer convenient and informative measurements for evaluating daily physiological states of individuals. In this work, epidermal and flexible near‐infrared (NIR) PPG sensors integrating a low‐power, high‐sensitivity organic phototransistor (OPT) with a high‐efficiency inorganic light‐emitting diode are developed. By exploiting an organic bulk heterojunction active layer and a bilayer gate dielectric design, a low voltage (<3 V) operated OPT with NIR responsivity as high as 3.5 × 10⁵ A W^?1 and noise equivalent power of 1.2 × 10^?15 W Hz^?1/2 is achieved, greatly surpassing commercial available silicon‐based photodetectors. In addition, the ultrathin encapsulation structure renders the device highly flexible and allows transfer printing of the device directly onto human skin. It is demonstrated that the epidermal/flexible PPG sensors are capable of continuously monitoring heart rate variability and precisely tracking the changes of pulse pressure at different postures of human subjects with the aid of electrocardiogram monitoring, exhibiting more reliable performance than commercial PPG sensors while consuming less power. The study suggests that the hybrid PPG sensor design may provide a promising solution for low‐power, real‐time physiological monitoring.     

Light Confinement Effect Induced Highly Sensitive,Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe2/Pyramid Si Heterojunction

In this study, a highly sensitive and self‐driven near‐infrared (NIR) light photodetector based on PdSe₂/pyramid Si heterojunction arrays, which are fabricated through simple selenization of predeposited Pd nanofilm on black Si, is demonstrated. The as‐fabricated hybrid device exhibits excellent photoresponse performance in terms of a large on/off ratio of 1.6 × 10⁵, a responsivity of 456 mA W^?1, and a high specific detectivity of up to 9.97 × 10¹³ Jones under 980 nm illumination at zero bias. Such a relatively high sensitivity can be ascribed to the light trapping effect of the pyramid microstructure, which is confirmed by numerical modeling based on finite‐difference time domain. On the other hand, thanks to the broad optical absorption properties of PdSe₂, the as‐fabricated device also exhibits obvious sensitivity to other NIR illuminations with wavelengths of 1300, 1550, and 1650 nm, which is beyond the photoresponse range of Si‐based devices. It is also found that the PdSe₂/pyramid Si heterojunction device can also function as an NIR light sensor, which can readily record both “tree” and “house” images produced by 980 and 1300 nm illumination, respectively.     

Sensitive and Stable Tin–Lead Hybrid Perovskite Photodetectors Enabled by Double‐Sided Surface Passivation for Infrared Upconversion Detection

Tin(Sn)‐based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn²⁺ is easily oxidized to Sn⁴⁺ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double‐sided interface engineering is proposed, that is, Sn‐Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn‐Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300–1050 nm, a low dark current density of 1.25 × 10^–3 mA cm^–2 at –0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn‐Pb broadband photodetectors are integrated in an infrared up‐conversion system, converting near‐infrared light into visible light. It is believed that a double‐sided passivation method can provide new strategies to achieving high‐performance perovskite photodetectors.     

Extending the Photovoltaic Response of Perovskite Solar Cells into the Near‐Infrared with a Narrow‐Bandgap Organic Semiconductor

Typical lead‐based perovskites solar cells show an onset of photogeneration around 800 nm, leaving plenty of spectral loss in the near‐infrared (NIR). Extending light absorption beyond 800 nm into the NIR should increase photocurrent generation and further improve photovoltaic efficiency of perovskite solar cells (PSCs). Here, a simple and facile approach is reported to incorporate a NIR‐chromophore that is also a Lewis‐base into perovskite absorbers to broaden their photoresponse and increase their photovoltaic efficiency. Compared with pristine PSCs without such an organic chromophore, these solar cells generate photocurrent in the NIR beyond the band edge of the perovskite active layer alone. Given the Lewis‐basic nature of the organic semiconductor, its addition to the photoactive layer also effectively passivates perovskite defects. These films thus exhibit significantly reduced trap densities, enhanced hole and electron mobilities, and suppressed illumination‐induced ion migration. As a consequence, perovskite solar cells with organic chromophore exhibit an enhanced efficiency of 21.6%, and substantively improved operational stability under continuous one‐sun illumination. The results demonstrate the potential generalizability of directly incorporating a multifunctional organic semiconductor that both extends light absorption and passivates surface traps in perovskite active layers to yield highly efficient and stable NIR‐harvesting PSCs.