A high-density, four-channel, OEIC transceiver module utilizingplanar-processed optical waveguides and flip-chip, solder-bumptechnology

An optoelectronic transceiver module is described consisting of a four-channel AlGaAs integrated laser/monitor transmitter and a four-channel GaAs MESFET integrated detector/preamp receiver. The optoelectronic chips are flip-chip, solder-bump bonded to a substrate containing electrical wiring and planar-processed optical waveguides. The optical waveguide layer serves two purposes: the routing of optical signals, as well providing mechanical registrations for the optoelectronic chips and fiber-optic ribbon connector. The work described here demonstrates one approach to high-density, optoelectronic array packaging compatible with existing high-performance electronic packaging technology     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.     

A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOStechnology

Results of a monolithically integrated Si optical receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of 1 Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10^-9 . The sensitivity of this OEIC in a 1.0-μm CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz.Ω effective transimpedance bandwidth product of the implemented amplifier is achieved     

国际上光纤通信技术发展的新趋势

光纤通信技术具有广阔的应用前景。为扩大光纤通信技术的应用领域,必将对光纤通信技术的发展提出一系列的新要求。本文拟从光纤、连接技术、光源和探测器、光电子集成、光调制器和转换器等五个方面来具体阐述国际上光纤通信技术发展的新趋势。     

高速光器件的光集成及光电集成

本文介绍了高速激光器的现状，并综述了高速激光器的光集成和接收机的光电集成。最后，讨论了光集成和光电集居技术及今后的发展。     

光纤通信有源器件的发展现状

光纤通信技术的飞速发展使其成为当今信息社会的重要支柱。其发展的基石是有源和无源半导体光电子器件。综述了几种主要的有源光电子器件的研究现状及其发展趋势,包括高速调制DFB激光器及其集成芯片、EDFA泵浦源用980 nm半导体高功率激光器、化合物半导体光电探测器、硅基长波长光电探测器等。     

液态金属离子源聚焦离子束系统在微米/纳米技术中的应用

随着微米／纳米科学技术的发展,微细加工微区分析所用的主要技术之一－聚焦离子束技术引人注目。本文简述了具有液态金属离子源的聚焦离子束技术的主要功能,着重报道了近来该技术下述领域中的应用。     

SMT-compatible large-tolerance "OptoBump" interface for interchip optical interconnections

A new optical interface called OptoBump has been developed to couple optoelectronic packages to an optoelectronic printed circuit board, thus enabling economical chip-to-chip optical interconnections. The optoelectronic packages have vertical-cavity surface-emitting laser (VCSEL) and PD-array chips in their cavity and an large scale integrated (LSI) mounted on top. A package converts high-speed electrical signals from the LSI into an array of optical signals, which are emitted from the bottom. The PCB contains integrated polymer optical waveguides to optically connect packages, and the use of surface-mount technology (SMT) to mount packages on the printed circuit board (PCB) keeps assembly costs low. The key to making the OptoBump interface fully compatible with SMT is the integration of microlens arrays directly into both packages and the PCB. A wide, collimated optical beam couples a package to the board across a narrow air gap and provides a large tolerance to misalignment during the SMT process. This paper explains the concept of the OptoBump interface, the optical coupling design by ray-trace simulation, and the fabrication of polymer microlenses and polymer waveguides. Experimental results revealed that the OptoBump interface provides a large tolerance of /spl plusmn/50 /spl mu/m, which is large enough for use with SMT. The OptoBump interface can replace high-speed electrical wiring at the chip level and also offers the benefit of not having any optical fibers or connectors on the board. Thus, it has the potential to bring about a revolutionary change in optoelectronic packaging.     

甚短距离光互连模块技术的发展动态

甚短距离光互连技术作为一种突破铜线互连传输瓶颈有效方法,受到了广泛关注。半导体光学器件技术、高速化集成电路技术和光电模块封装技术作为实现光互连的关键技术发展较为迅速。首先阐述了垂直腔面发射激光器的电路模型,然后针对光信号发送模块介绍了预加重补偿技术以及开环方式稳定光功率输出技术,并对如何提高光信号接收模块带宽性能的电路技术进行了分析。其次结合光互连模块技术标准的发展,以NEC公司的实用化甚短距离并行光互连模块为例,对其光电封装技术进行了说明,最后就甚短距离光互连技术所面临的课题及发展前景进行了总结。     

一种硅光电接收处理集成电路的技术研究

介绍了一种在硅衬底上集成光电二极管探测器和双极接收放大处理电路的单芯片光电集成电路OEIC。从理论上阐述了光电器件实现的原理;为实现光电探测二极管与单片双极集成电路的兼容,设计了光电探测器的专用结构,并研制了光电探测器的专用模型。对接收处理电路进行了模拟仿真和优化设计。建立了与双极工艺兼容的制作光电二极管探测器的专用工艺;采用该工艺,对光电器件进行了版图设计、工艺制作和测试研究,给出了初步试验的方法和结果。     

Integrated optical receiver with beam localisation

The performance of optical receivers is degraded by misalignment and defocusing of the incident light beam on a detector. The presented integrated optical receiver solves the alignment and defocusing problem using optoelectronic light beam localisation. A demonstrator is realised in a standard CMOS technology     

A Fully Integrated 4 × 10-Gb/s DWDM Optoelectronic Transceiver Implemented in a Standard 0.13 μm CMOS SOI Technology

Optical and electronic building blocks required for DWDM transceivers have been integrated in a 0.13 mum CMOS SOI technology. Using these building blocks, a 4 x 10-Gb/s single-chip DWDM optoelectronic transceiver with 200 GHz channel spacing has been demonstrated. The DWDM transceiver demonstrates an unprecedented level of optoelectronic system integration, bringing all required optical and electronic transceiver functions together on a single SOI substrate. An aggregate data rate of 40 Gb/s was achieved over a single fiber, with a BER of less than 10^-12 and a power consumption of 3.5 W.     

短波中红外硅基光子学进展（特邀）

短波中红外光学（2~2.5 μm）在通信测距、卫星遥感、疾病诊断、军事国防等领域具有广泛的应用。作为短波中红外光学系统的关键核心部件,集成光电器件的开发一直都是重点的研究领域。得益于硅基材料超宽的光谱透明窗口,其在开发短波中红外集成光电子器件方面极具发展前景,近年来获得了广泛的关注。文中简要讨论了短波中红外硅基光子学的应用前景,从无源波导器件（包括波导、光栅耦合器、微型谐振腔、复用/解复用器等）、非线性光学波导器件和光电波导器件（包括调制器和探测器等）三方面综述了短波中红外硅基光子学的发展历史和前沿进展。     

Si基光电子学的研究与展望

Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要，在全世界范围内迅速兴起的一个极为活跃的研究前沿。其最终目标之一是为了实现人们所期盼的全Si光电子集成电路．本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科，近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展，并预测了全Si光电子集成技术的未来发展趋势。     

VHDL Modeling of Optoelectronic Interconnect Networks

High performance computer and communication systems of today demands improvements in communication delay and connectivity. Optoelectronic interconnect is well recognized as a technology to provide the necessary improvement. However the complexity of optoelectronic systems is motivating a need for CAD tools which can simulate electronic and optoelectronic device and circuit behaviors simultaneously and at multiple levels of abstraction. This paper describes VHDL modeling of optical signals and integrated optical waveguides which enables seamless integration of mixed electronic/optoelectronic simulations in an established electronic design automation environment.     

Optoelectronic/VLSI

Technology is presented for placing thousands of surface-normal input and output optoelectronic devices onto very large scale integration (VLSI) chips. This enables optical means of bringing information onto and off of an integrated circuit (IC), supplanting electrical means such as wire-bonds     

Optoelectronic InP-InGaAs smart pixels for optical interconnectionsand computing

We describe InP-InGaAs optoelectronic smart pixels for applications in optical interconnection and computing. These circuits consist of monolithically integrated p-i-n photodiodes, heterojunction bipolar transistor (HBT) receivers and transmitters, and surface-bonded folded-cavity surface-emitting lasers (FCSEL's). Design, fabrication, and performance of two different circuits: a high-sensitivity pixel, and a high-bandwidth pixel with logic functions are discussed. We achieve a minimum switching energy of 6 fJ, a maximum pixel bandwidth of 800 MHz, and an optoelectronic gain of 3. To our knowledge, these are the best overall performance characteristics of any optoelectronic smart pixel technology and are competitive or superior to that achieved using all-electronic interconnects     

GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications

We report on a monolithic integration technique incorporating selective GaAs/GaAlAs optical device epitaxy (based on metalorganic chemical vapor deposition (MOCVD)) and planar ion-implanted GaAs devices, formulated for application to complex integrated optoelectronic circuits. This integration scheme offers fabrication compatibility of epitaxially grown optoelectronic devices with maturing GaAs electronic circuit approaches which require selective multiple implants and small gate geometries. Details of the monolithic integration technique and an example of its application to an optoelectronic transmitter are described.     

InP-InGaAs single HBT technology for photoreceiver OEIC's at 40Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ω/380 Ω and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value     

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.