图像领域日本专利检索资源简介

图像领域日本专利申请较为活跃,对于日本专利文献的有效检索有利于企业了解图像领域技术发展,以及更具针对性的进行专利布局.介绍了常用的日本专利检索资源;日本特许厅网站和PATENTICS网站.使用本文的方法能够实现对日本专利文献的有效检索,从而有利于图像企业的技术进步和专利发展.     

CMOS图像传感器的关键专利分析

CMOS图像传感器具有低成本、低功耗、易集成和读取高速灵活等优点,随着近年来CMOS图像传感器技术的发展,CMOS图像传感器正逐渐取代传统的CCD图像传感器的主流地位.针对CMOS图像传感器领域的专利文献,基于专利文献的引用频次,对该领域的关键专利进行研究和分析,总结了关键专利的技术要点.     

低噪声CMOS图像传感器的重点专利分析

随着大规模集成电路设计和信号处理技术的提高,CMOS图像传感器日益受到重视,成为固态图像传感器的研究热点,但是噪声仍是制约CMOS图像传感器发展的重要因素之一.针对低噪声的CMOS图像传感器技术领域的专利文献,给出了该领域主要申请人的申请量分布图,并对该领域的重要专利进行分析,介绍了前5位重要专利的技术特点.     

CMOS图像传感器专利分析——针对申请人以及目标国的分析

随着集成电路设计技术和工艺水平的进步,CMOS图像传感器已逐渐占据了主导地位.针对CMOS图像传感器技术领域的专利文献,分析了该领域主要申请人以及目标国的分布情况,使得申请人能够清楚了解该技术领域的专利状况.     

基于图像传感测控领域的专利检索策略

CCD传感器在图像采集、动态检测控制等领域得到广泛应用。目前,国内外企业对于该技术领域的专利分析布局已经开始,因此,不管对企业还是审查员,针对该领域的专利文献检索分析策略对于研究该领域技术文献有着至关重要的作用。本文通过对多个实际检索案例的分析,说明如何抓住发明点,进而对专利文献实现有效检索,使申请人或审查员对该领域的现有技术的获取变得更高效。     

利用外网资源进行图像通信领域技术的检索

首先对图像通信领域的技术特点进行分析,阐明现有技术检索的重要性.通过结合图像领域的具体案例,介绍了几种主要的利用外网资源进行专利、非专利文献的检索案例.最后简单介绍了利用搜索引擎对现有技术进行综合检索.     

图像传感器技术的专利状况分析——CCD图像传感器技术的重点专利分析

图像传感器主要分为感光耦合元件(CCD)和互补式金属氧化物半导体有源像素传感器(CMOS)两种,其中感光耦合元件因诸多优点,其技术以及产业应用最为成熟。针对CCD图像传感器技术领域的专利文献,对该领域的重点专利进行了技术研究和分析,揭示了这些重点专利的技术要点。     

基于图像领域谈专利检索的关键词选取与搭配

基于图像领域详细阐述了在专利信息检索中关键词的选取与组合搭配方法,从单刀直入、向上延伸、向下延伸和横向延伸四个角度详细阐述了逐层深入的关键词的选取策略,并基于对关键词间的距离的讨论,阐述了如何基于关键词间的距离关系确定关键词间的组合搭配,如何结合专利文献的撰写特点确定关键词间的组合搭配.对于科研人员或专利信息检索者而言,文中对查新检索、技术资料检索或专利信息分析检索均具有有益的引导和借鉴作用,同时也可对其他文献类型的信息检索提供有益的参考.     

图像传感器技术的专利状况分析——图像传感器技术的宏观定量分析

图像传感器是一种将光学图像转换成电子信号的器件,它被广泛地应用于摄像机、数码相机、照相手机等设备中。图像传感器主要分为感光耦合元件和互补式金属氧化物半导体有源像素传感器两种。基于图像传感器技术领域的专利文献,对该领域专利总体变化情况进行统计和分析,研究当前技术发展状况,分析在中国市场具有知识产权竞争优势的申请人,从专利布局现状揭示产业发展风险与机遇。     

浅析图像处理领域的欧洲专利局检索报告

基于图像处理领域,对欧洲专利局检索报告中所涉及的专利/非专利文献的分布比例做了统计分析,并进一步针对其中的专利文献的国别做了统计分析.根据分析结果,绘制了X/Y/E类专利/非专利文献的引用比例图,以及主要国家/地区专利文献引用比例图.基于上述比例图给出了图像处理领域检索侧重点的建议,有利于提高该领域专利检索的效率.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.