共查询到16条相似文献,搜索用时 46 毫秒
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基于最新的CF/CF 3.0协议,设计了一款基于AHB总线的可配置的CF/CF 卡控制器.设计采用了高性能乒乓操作方式的改进异步FIFO.针对CF/CF 卡实际使用时往往只需要其某一两种模式的特点,采用了一种可定制可裁剪CF/CF 控制器电路的设计思路,极大地提高设计效率;探讨了一种基于SoC高性能接口控制器电路通用体系架构,已成功应用到多种接口控制器的设计中.设计通过了仿真(NC-Verilog)、综合(DC)以及FPGA验证,嵌入到单板系统中,实现了与CF存储卡之间的数据传输. 相似文献
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介绍了CF卡的基本结构、工作原理,在此基础上提出了DM642与CF卡的硬件和软件接口方案,并给出了相应的程序,然后根据存储的数据格式要求实现了对CF卡的内存空间的管理,能方便地对CF卡进行各种读、写操作。 相似文献
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A mass-spectrometric reinvestigation of ionisation and dissociation in CF4 was undertaken to deduce the probable value of the CF3?F bond strength. From studies of the appearance potentials for both positive and negative F and CF3 ions a best value for the bond strength of 143 kcal/mole is deduced. Possible reasons for the abnormal low dielectric strength of CF4 are discussed. 相似文献
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A novel current-mode biquad using operational transconductance amplifiers (OTAs) and current follower (CF) is presented. The circuit can realise lowpass, bandpass, highpass, band-stop and all-pass transfer functions without any circuit matching conditions. The circuit parameters can also be tuned independently by the transconductance gains of the OTAs. The proposed biquad enjoys very low sensitivities with respect to the circuit elements. 相似文献
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A maskless etching technique that is useful for manufacturing solar cells and microelectronics was examined using surface discharge plasma operated at atmospheric pressure. In this study, in order to investigate the obvious etching characteristics of Si using surface discharge plasma, we observed the grooves obtained by etching Si substrates under He/CF4 and Ar/CF4 conditions. The etching rate using Ar was faster than when using He. Further, the choice of gas was found to influence the direction along which etching progressed. Based on the results, the characteristics and mechanisms of Si etching were discussed. 相似文献
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