Dielectric Behavior of Nano-PbTiO3/PVDF Nanocomposites In-situ Synthesized by the Sol-gel Method

PbTiO3 / PVDF nanocomposites were prepared via in-situ growth of nanosized PbTiO3 particles in PVDF matrix by sol-gel method. Nanosized PbTiO3 grown in the composites film was characterized by X-ray diffractometry （XRD） and transmission electron mieroscopy, and the dielectric properties of the composite films prepared were measured. The distribution of PbTiO3 nanoparticles in-situ grown in the PVDF matrix was examined using a scanning electron microscope. The relative dielectric eonstant increases with increasing the weight fracture of PbTiO3 in-situ grown. In particular, the dielectric loss monotonically decreases with the increase of PbTiO3 content at 1 MHz.     

Preparation of BN／SiO2 ceramics by PIP method

The precursor infiltration and pyrolysis(PIP) method for preparation of BN/SiO2 composites was used to improve mechanical properties, dielectric properties and feasibility of high temperature dielectric parts with large dimensions and complex shapes. In the processing procedure, the porous BN ceramic matrix was first successfully prepared by compacting the mixed powders of B and BN and then sintering them at a certain temperature under normal pressure of N2. The polycarbosilane(PCS) solution was vacuum infiltrated into porous BN ceramics at the room temperature and then at 800℃ in the air to depolimerize out amorphous SiO2, and sintered further at 1 300℃ in N2 to get BN/SiO2 composites. The microstructure of materials was studied by means of X-ray diffraction and electron probe micro analysis. The thermo-decomposition mechanism of PCS was investigated by a TG-DTA and infrared (IR) spectrum analysis. The flexural strengths were measured by the three-point bending method. The dielectric constant and the loss tangent were measured by the wave-guide method. The results show BN/SiO2 composites were fabricated. The obtained composites posses a flexural strength of 61.96 - 93.31 MPa, the dielectric constant in the range of 3.50 - 3.78 and the order of magnitude of the loss tangent at 10^-3 , which are good for the high tempera turedielectric parts with large size and complex shapes.     

The Influence of Free Water Content on Dielectric Properties of Alkali Active Slag Cement Paste

The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing, the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.     

Synthesis of Organic Modified SiC_w/PVDF Composite Membrane and Its Dielectric Properties under Low Temperature

Cetyltrimethylammonium bromide(CTAB) was incorporated into silicon carbide whiskers(SiC_w) to improve their hydrophobicity. The solution casting method was employed to develop composite membranes of polyvinylidene fluoride(CTAB-SiC_w/PVDF) with different feed ratios. FT-IR spectroscopic studies proved that CTAB was successfully incorporated into the SiC_w. SiC_w phase structure was maintained after modification by CTAB according to XRD results. SEM studies indicated that the surface became smoother with CTAB dispersal in the PVDF membrane. The dielectric properties of the composite membranes containing various amounts of CTAB-SiC_w were measured at low temperature. It was found that the dielectric constant of the composite membranes with 13.0 wt% whiskers reached a maximum value of 25 at low frequency, and decreased to nine at high frequency(from 500 Hz to 1 MHz) at 0 ℃. The dielectric loss of each composite membrane increased with increasing temperature and reached a maximum value. The value shifted with corresponding frequency increases. In addition, the dielectric loss reached a maximum value of 0.2 when 16.7 wt% of CTAB-SiC_w was fed at each frequency(from-30 ℃ to 10 ℃). At room temperature, the dielectric constant could be maintained at 42 and the loss factor decreased to 0.8 at 100 Hz when 13.0 wt% of CTABSiC_w was incorporated. Additionally, TGA experiments indicated that the decomposition temperature of a PVDF membrane was increased by 10 ℃ and its heat resistance was improved by adding 13.0 wt% of CTAB-SiC_w. This PVDF composite membrane has potential for use as an insulator and capacitor.     

Effect of different forms of silica on sintering,microstructure and properties of borosilicate glass/Al2O3 composites

The effects of the introduction of silica glass and silica ceramic into Ca-Al-B-Si-O glass/ Al2O3 composites on decreasing the shrinkage and the dielectric constant of samples were investigated by FTIR, DSC, XRD and SEM. The results show that silica ceramic filler can better improve the formation of Si– O–Si network in the composites under high temperature, which leads to increased continuity of glass network at high temperature, and deduces the increase of viscosity of composites and further results in the decrease in the shrinkage of samples. Densification, three-point strength, and dielectric constant of samples decrease with the increase of silica glass or silica ceramic content. By contrast, Ca-Al-B-Si-O glass/Al2O3 composites with 4 wt% silica ceramic exhibit better properties of a bulk density of 2.81 g cm-3, a porosity of 0.3%, a 3dp value of 202 MPa, a ε r value of 7.41, a tan δ value of 8.3×10-4at 10 MHz and a well matching with Ag electrodes. This material is suitable to be used as the LTCC material for the application in wireless communications.     

Effect of Nano Silver Modification on the Dielectric Properties of Ag@TiO_2/PVDF Composites

To get a dielectric material with a high dielectric permittivity and suppressed dielectric loss,nano-Ag with a particle size of 20 nm and Ag@TiO_2 core-shell particles with diameters of approximately 70-120 nm were embedded in polyvinylidene fluoride (PVDF) to fabricate nano-Ag/Ag@TiO_2/PVDF composites.After being modified by nano-Ag with 3 vol% optimal amount,the relative permittivity (ε_r) at 100 Hz of 50 vol% Ag@TiO_2/PVDF composites was 61,and the dielectric loss can be suppressed to 0.04,almost 96.4% lower than that of unmodified composites,and a higher frequency stability of both ε_r and loss has also been found.The underlying mechanism of the reduced loss was attributed to Maxwell-Wagner polarization and the Coulomb blockade effect caused by the introduction of a small amount of nano-Ag,which will block the movement of electrons between metal nanoparticles and composites.The space charge polarization and conductance loss are weakened at lower and higher Ag@TiO_2 filling ratios,respectively,thus leading to a very low loss of the composites.     

Dielectric and Piezoelectric Properties of 0-3 PZT/PVDF Composite Doped with Polyaniline

Lead zirconate titanate （ PZT ） / polyvinylidene fluoride （PVDF） 0-3 piezoelectric composites doped with polyaniline （PANI） were obtained by hot-press method. The polarization properties of the composites were characterized by XRD and P- E hysteresis loops at room temperature. And the dielectric and piezoelectric properties were also measured. The results show that the poling of PZT could be effectively carried oat and the dielectric constant e, and dissipation tanδ increase monatonously by increasing the volume fraction of PANI in the composite. The piezoelectric constant d33, and the planar electromechanical coupling factor kp increase while the mechanical quality factor Qm decreases with the increase in the content of PANI. The d33, kp and Qm show the extremum values at 8 vol%-10 vol% PANI.     

Dielectric Behavior of BaTiO3／ PVDF Nanocomposites In-situ Synthesized by the Sol-Gel Method

BaTiO3/ PVDF nanocomposites were prepared via in-situ growth of nanosized BaTiO3 particles in PVDF matrix by using the sol-gel method. The present elements of BaTiO3/ PVDF nanocomposites were analyzed by an electron probe X-ray microanalyser. Nanosized BaTiO3 grown in the composite films was characterized by an X-ray diffractometer and a transmission electron microscope, and the dielectric properties of the composite films were measured. The distribution of BaTiO3 nanoparticles in-situ grown in the PVDF matrix was examined using a scanning electron microscope.     

Preparation and Microstrutures of BSTO/MgO Ferroelectric Materials for Phase Shift

Barium strontium titanate/magnesia （BSTO/MgO） ferroelectric material for phase shift was prepared by traditional solid phase synthesis. The phase distribution, microstructure and electric properties were investigated. The results show that no secondary phase appears in the composites and the dimension of grains distributes uniformly. With 50 wt% MgO content, the dielectric tunability reaches 17.5 % in the external DC field of 4 000 Vomm^-1 and the microwave loss at about 2.5 GHz is 8×10^-3. Hence, it can be applied in tunable microwave phase shifters.     

Preparation, Characterization and Dielectric Property of Sr5 LaTi3 Nb7O30 Ceramic

Sr5LaTi3Nb7O30 ceramic was prepared by the conventional high temperature solid-state reaction route. The sintered samples were characterized by X-ray diffraction, scanning electron microscopy ( SEM ), differential thermal calorimetry ( DSC ) and dielectric measurements. The results show Sr5LaTi3Nb7O30 belongs to paraclectric phase of filled tetrngonal TB structure at room temperature, and undergoes a diffuse phase transition in the temperature range of -54-34℃ . And Sr5LaTi3Nb7O30 ceramic shows a high dielectric constant of 479 with a low dielectric loss of 0.005 at 1MHz . In comparison with Ba-based ceramics with TB structure, the temperature coefficients of the dielectric constant ( τt ) is significantly reduced.     

Characterization of PZT/PVC Composites Added with Carbon Black

1Introduction Piezoelectricceramicshavebeenusedastheconven tionalintelligentmaterialsforalongtime.Theirinterest ingpropertiesusedintransducersarehighpiezoelectric straincoefficient(d33),highelectromechanicalcoupling coefficient(Kp)[15].However,therelative…     

Dielectric Properties of B2O3 Doped MgTiO3-CaTiO3 System Ceramics

The dielectric ceramics with a main crystal phase of MGTiO3 and additional crystal phase of CaTiO3 were prepared by the conventional electronic ceramics technology .the strucures of MgTiO3 are ilmenitetype,and belong to hexagonal syngony.the ratio of MgTiO3 to Ca TiO3 doping on the dielectric properties of MGTiO3-CaTiO3(MCT)ceranics were inrestigated.the addition of B2O3 decreases the sintering temperatnre and results in rapid desification without obrious negative effect on the Q values of the system(Q=1/tan ).B2O3 exists as liquid phase in the sintering process,promoting the reactions as a singering agent.     

Phase structure and electrical properties of La<Subscript>2</Subscript>O<Subscript>3</Subscript>-doped BiInO<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> ceramics with high curie temperature

The phase structure and electrical properties of pure and La2O3-doped Bi-InO3-PbTiO3 （BI-PT） ceramics were studied respectively. In （1 -x）BI-xPT （x=0.72-0.80） ceramics, the stability of tetragonal phase increased with increasing x, and pure perovskite structure was obtained for x=-0.80 ceramics. The phase transition temperature range was between 575 ℃ and 600 ℃ for x=0.72-0.80 ceramics, higher than that of PT （-490 ℃）. The c/a ratio almost linearly decreased with increasing La2O3 content in x-0.80 ceramics. It is believed that Pb^2＋ vacancies were formed by La^3＋ substituting Pb^2＋ in La2O3-doped BI-PT ceramics. Tc shifted to lower temperature by 30 ℃/mol% La2O3. The maximum dielectric constant 8557 around 559 ℃ was exhibited in 0.5mol%-doped BI-0.80PT ceramics. La2O3-doped ceramics could be poled resulting from decreasing of c/a ratio and improving of dielectric loss and resistivity. The maximum piezoelectric coefficient d33 was 12 pC/N for 2mol%-doped BI-0.80PT ceramics.     

聚吡咯/钛酸钡/聚偏氟乙烯复合材料的制备及性能

以聚偏氟乙烯(PVDF)为基体,聚吡咯(PPy)和钛酸钡(barium titanate,BT)为填料,通过溶液共混法制备了不同PPy质量分数的PPy/BT/PVDF三相复合材料,并对复合材料的微观形貌、结构和介电性能进行表征和分析.结果表明,PPy和BT大多均匀分散在聚合物基体中,加入PPy对PVDF的结晶影响较小;...     

Ferroelectric properties of Bi3.4Ho0.6Ti3O12 thin films prepared by sol-gel method

We have prepared the Ho-substituted bismuth titanate (Bi_3.4Ho_0.6Ti₃O₁₂, BHT) thin films on Pt/Ti/SiO₂/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm² and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×10⁹ switching cycles at 1 MHz frenquency, and the BHT film shows good insulating behavior according to the test of leakage current. Supported by the Hubei Province Natural Science Foundation (Grant No. 2007ABA309)     

Effects of NaNbO3-Co2O3 Co-additive on the Properties of PZN-PZT Ceramics

NaNbO3-Co2O3 co-added PZN-PZT （PZCNNT） ceramics were prepared using conventional solid state reaction. The piezoelectric and dielectric properties were measured. The experimental results show that the addition of 0.3mo1% Co2O3 leads to low dielectric loss （tgδ） in PZCNNT ceramics and the proper addition of NaNbO3 not only improves piezoelectric properties but also decreases intensively dielectric loss and mechanical loss. The optimal ceramic having d33=310 pC/N, kp=0.59, εr=985, tgδ=0.0034, Qm=1380 was obtained.