共查询到18条相似文献,搜索用时 93 毫秒
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《半导体技术》1976,(3)
一、概述 在以往的集成电路的生产中,尤其是在中、大规模集成电路的试制中,深深感到高质量光刻掩模的需要。举例说:在多层布线工艺试验工作中,目前最难于解决的问题莫过于光刻中所产生的针孔,而针孔的产生,掩模的质量是问题的主要方面之一。在中、大规模集成电路的试制中,由于芯片的集成度提高,芯片尺寸增加,掩模图形质量对电路成品率产生巨大影响,不解决掩模质量问题,中、大规模电路的批量生产看来是困难的。由于生产和科研工作开展的实际需要,促使我们开展了选择性透光掩模(即彩色版)的试制。 选择性透光掩模之所以受人注意,主要是它们具有以下几方面优点: a.具有选择性透光,便于光刻时图形套准,而且不必在掩模上作对准标记。 b.光反射率低,改善了边缘锐度,提高了分辨率,有利于细线条光刻。光反射率低,使光刻操作者眼睛不致疲劳。 c.透光掩模本身具有优良的薄膜特性,如针孔密度小,粘附性好,耐划伤等。 目前,一般认为具有代表性的有发展前途的透光掩模大致有三种:即硅、氧化铬和氧化铁。硅掩模是一种相当出色的掩模。据称硅掩模针孔密度最小,可认为无针孔 相似文献
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通过耦合波理论分析,使用矩阵转换方法,对全息光刻中全息掩模衍射效率进行数值模拟计算,得出了影响全息掩模衍射特性的因素主要是显影前后记录材料平均介电常数的改变、介质的膨胀与收缩以及非共轭再现等,为实验研究提供了理论依据. 相似文献
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阻碍广泛采用提供高分辨率图形清晰度的扫描电子束光刻的两个问题是电子束光刻必须连续曝光所有的图形,以及电子束的设备复杂和成本高。显然,两者可通过新近发展的 X 射线光刻法来克服,用类似于接触影印光刻方法的 X 射线光刻可获得复印亚微米分辨率图形。还有一个优越性是容许掩模与祥片间有一定间隔。本文叙述了 X 射线光刻法并且对制作亚微米分辨率图形清晰度的实施的前途作了估价。 相似文献
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通过对光刻系统中光学成像系统的模拟,提出了改善光刻分辨率的途径以及基于卷积核的计算光强的方法,并介绍了光学系统的传输交叉系数具体计算过程.建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型,有助于开发由成品率驱动的版图设计工具,自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务. 相似文献
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Etienne Herth Pascal Tilmant Marc Faucher Marc François Christophe Boyaval Francois Vaurette Yves Deblocq Bernard Legrand Lionel Buchaillot 《Microelectronic Engineering》2010,87(11):2057-521
We present a lithography process using electron beam lithography with an optical resist AZnLOF 2020 for pattern transfer. High-resolution 100 keV electron beam lithography in 400 nm layers of negative resist AZnLOF 2020 diluted 10:4 with PMGEA is realized. After the electron beam lithography process, the resist is used as a mask for reactive ion etching. We performed the transfer of patterns by RIE etching of the substrate allowing a final resolution of 100 nm. We demonstrate the patterning in an insulating layer, thus simplifying the fabrication process of various multilayer devices; proximity correction has been applied to improve pattern quality and also to obtain lines width according to their spacing. This negative resist is removed by wet etching or dry etching, could allow combining pattern for smallest size down to 100 nm by EBL techniques and for larger sizes by traditional lithography using photomask. 相似文献
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Transparent and Reusable Nanostencil Lithography for Organic–Inorganic Hybrid Perovskite Nanodevices
Bin Han Bo Liu Guanghui Wang Qi Qiu Zhe Wang Yuying Xi Yanxia Cui Shufang Ma Bingshe Xu Hsien-Yi Hsu 《Advanced functional materials》2023,33(29):2300570
Organic—inorganic hybrid perovskites have attracted considerable attention for developing novel optoelectronic devices owing to their excellent photoresponses. However, conventional nanolithography of hybrid perovskites remains a challenge because they undergo severe damage in standard lithographic solvents, which prohibits device miniaturization and integration. In this study, a novel transparent stencil nanolithography (t-SL) technique is developed based on focused ion beam (FIB)-assisted polyethylene terephthalate (PET) direct patterning. The proposed t-SL enables ultrahigh lithography resolution down to 100 nm and accurate stencil mask alignment. Moreover, the stencil mask can be reused more than ten times, which is cost-effective for device fabrication. By applying this lithographic technique to hybrid perovskites, a high-performance 2D hybrid perovskite heterostructure photodetector is fabricated. The responsivity and detectivity of the proposed heterostructure photodetector can reach up to 28.3 A W−1 and 1.5 × 1013 Jones, respectively. This t-SL nanolithography technique based on FIB-assisted PET direct patterning can effectively support the miniaturization and integration of hybrid-perovskite-based electronic devices. 相似文献
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硅集成电路光刻技术的发展与挑战 总被引:17,自引:2,他引:17
从微电子集成电路技术发展的趋势,介绍了集成电路技术发展对光刻曝光技术的需求,综述了当前主流的DUV光学曝光技术和新一代曝光技术中的157nm光学曝光、13nm EUV曝光、电子束曝光、X射线曝光、离子束曝光和纳米印制光刻技术的发展状况及所面临的技术挑战.同时,对光学曝光技术中采用的各种分辨率增强技术如偏轴照明(OAI)、光学邻近效应校正(OPC)、移相掩膜(PSM)、硅片表面的平整化、光刻胶修剪(resist trimming)、抗反射功能和表面感光后的多层光刻胶等技术的原理进行了介绍,并对不同技术时代可能采用的曝光技术作了展望性的评述. 相似文献
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X-ray lithography-an overview 总被引:1,自引:0,他引:1
Peckerar M.C. Maldonado J.R. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1993,81(9):1249-1274
The fundamentals of X-ray lithography are reviewed. Issues associated with resolution, wafer throughput, and process latitude are discussed. X-ray lithography is compared with other lithographic technologies; future advancements, such as X-ray projection lithography, are described. It is shown that the major barrier to the near-term success for X-ray lithography is the requirement for a defect-free one-to-one mask which satisfies the stringent image-placement needs of submicrometer patterning 相似文献