Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode

Au/3C-SiC/p-Si/Al Schottky barrier diode was prepared using atmospheric pressure chemical vapor deposition technique. The device parameters such as barrier height, ideality factor, and series resistance were calculated using current-voltage characteristics, and were found to be 0.44 eV, 1.55, and 1.02 × 10⁴ Ω, respectively. The photocapacitive properties of the diode were studied under various illumination intensities. The transient photocapacitance measurements indicate that the capacitance of the Au/3C-SiC/p-Si/Al Schottky diode is very sensitive to illumination. The photocapacitance of the diode increases with increase in illumination intensity. The increase in photocapacitance with increase in illumination intensity suggests that these devices could be utilized as a photocapacitive sensor for optical sensors.     

The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 10¹⁵ cm⁻³. The barrier heights for the Co/n-type Si metal–semiconductor structures from the current–voltage (I–V) characteristics varied from 0.64 to 0.70 eV, the ideality factor n varied from 1.18 to 1.26, and from reverse bias capacitance–voltage (C⁻²–V) characteristics the barrier height varied from 0.68 to 0.81 eV. The experimental barrier height distributions obtained from the I–V and C⁻²–V characteristics were fitted by a Gaussian distribution function, and their mean values were found to be 0.67 and 0.75 eV, respectively. Furthermore, the lateral homogeneous BH value of approximately 0.81 eV for Co/n-Si metal–semiconductor structures was obtained from the linear relationship between experimental effective BHs and ideality factors.     

Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode

Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current–voltage (I–V) and capacitance–voltage (C–V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier between the metal and the semiconductor. Electrical properties of the device obtained from C–V characteristics have been compared with the ones obtained from its I–V characteristics. It has been seen that at sufficiently high frequencies, the charge at the interface cannot follow an ac signal. The interface state density of the diode has been also calculated.     

Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (δ), space charge region width (W_D), interface state density (N_ss), series resistance (R_s), acceptor concentration (N_A) of the Au/Poly(4-vinyl phenol)/p-Si structure have been extracted from the current–voltage (I–V), frequency dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. It is pointed out that the interface states lead to deviation of the ideality factor value from 1 and frequency dispersion of the C–V characteristics. N_ss profiles as a function of (E_ss−E_v) obtained using I–V and low frequency C–V measurements are in good agreement. N_ss values varying between 10¹² and 10¹³ eV⁻¹ cm⁻² mean that Poly(4-vinyl phenol) is a candidate for insulator layer forming on Si as powerful as SiN₄, SnO₂, TiO₂.     

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

Al/P2ClAn/p-Si/Al structure was obtained by the evaporation of the polymer P2ClAn on the front surface of p-type silicon substrate. The P2ClAn emeraldine salt was chemically synthesized by using propionic (C₂H₅COOH) acid. The current–voltage (I–V) characteristic of the structure was measured at room temperature. The capacitance–voltage–frequency (C–V–f) in terms of interface states over the frequency range of 10 kHz to 3 MHz has been investigated. The capacitance has decreased with increasing frequency, due to the interface states distribution. From the forward bias I–V plot for the sample, the ideality factor (n) and zero-bias barrier height (Φ_bp,0) were obtained as 4.84 and 0.787 eV, respectively. Under forward bias, the high value of the ideality factor and the dispersion in capacitance could be due to the interface state distribution, the interfacial insulator layer, the conducting polymer on the interface and inhomogeneity of the barrier height. The energy distributions and the relaxation times of the interface states were determined in the energy range of (0.387 − E_v) to (0.787 − E_v) eV.     

煅烧温度对高体积分数SiC_p/Al复合材料性能的影响

以F220、F500、F600这3种粒度的磨料级绿SiC混合粉为原料制成预制件,然后将其分别在500、1 100和1 200℃煅烧后无压熔渗液态铝合金制备SiC体积分数为62%~64%的铝基复合材料SiCp/Al;研究预制件煅烧温度对SiCp/Al复合材料结构和性能的影响。结果表明:不同温度下煅烧的SiC预制件渗铝后,都能获得结构均匀致密的复合材料;高温煅烧使SiC颗粒氧化形成骨架,导致强度从305 MPa降至285~245 MPa;SiC颗粒表面氧化转变成的SiO2薄膜增加复合材料中的陶瓷含量,使复合材料的热膨胀系数进一步降低;当SiC预制件中SiO2薄膜质量分数达到3.7%~6.7%时,SiCp/Al复合材料界面热阻增大4~6倍,复合材料热导率从184 W/(m.℃)降至139~127 W/(m.℃)。     

温度对Cf/Al与TiAl自蔓延连接接头界面及性能的影响

采用自蔓延连接方法,在真空炉中利用中间层14Al-2Ni-3CuO实现了C_f/Al复合材料与TiAl合金的连接.在连接接头中,靠近TiAl侧,中间层与TiAl生成TiAl₃;靠近C_f/Al侧,中间层与C_f/Al生成 NiAl₃;在C_f/Al复合材料中,中间层的Ni原子扩散到复合材料中,在C_f/Al也有 NiAl₃生成.连接温度对接头界面组织及接头强度影响较大,随着连接温度的升高,中间层与TiAl生成的TiAl₃层厚度明显增加.接头抗剪强度先逐渐增大,在550℃时最高可达26.9 MPa,当连接温度达到600℃时,接头的抗剪强度迅速降低.连接温度较低时,断裂多发生在靠近中间层的TiAl侧;连接温度较高时,断裂多发生在靠近中间层的C_f/Al复合材料侧.     

焊接温度对Mg/Al扩散焊接头微观组织和性能的影响

采用真空扩散焊在不同焊接温度下对AZ31B镁合金和6061铝合金进行连接。利用光学显微镜（OM）、扫描电镜（SEM）和能谱（EDX）观察Mg/Al异种金属接头的显微组织。结果表明：随着焊接温度的升高,扩散区各层的厚度增加,且组织发生明显变化。440°C时扩散层由Mg2Al3层和Mg17Al12层组成;460和480°C时由Mg2Al3层、Mg17Al12层和Mg17Al12与镁基固溶体的共晶层组成。随着加热温度的升高,高硬度区域显著增多,区域内不同位置的硬度存在明显差别。当焊接温度为440°C时接头的最大抗拉强度为37MPa,脆性断裂发生在Mg17Al12层。     

High temperature scaling of Ni-xSi-10 at.% Al alloys in 1 atm of pure O2

The oxidation of Ni-xSi-10Al alloys (with x = 0, 2, 4 and 6 at.%), has been studied at 900 and 1000 °C in 1 atm of pure O₂ to examine the effect of different silicon additions on the behavior of ternary Ni-Si-10Al alloys. The kinetic curves of Ni-10Al are approximately parabolic at both 900 and 1000 °C. Conversely, the kinetics of the ternary alloys at both temperatures correspond generally to a rate decrease faster than predicted by the parabolic rate law, except for the oxidation of Ni-6Si-10Al at 1000 °C, which exhibits a single nearly-parabolic stage. Oxidation of the binary alloy formed at both temperatures an internal oxidation zone beneath a layer of NiO. Oxidation of Ni-2Si-10Al at both temperatures and of the other two alloys at 900 °C formed initially a zone of internal oxidation of Al + Si. However, a layer of alumina forming at the front of internal oxidation after some time blocked the internal oxidation and produced a gradual conversion of the metal matrix of this region into NiO, with a simultaneous decrease of the oxidation rate. Conversely, the oxidation of Ni-4Si-10Al and Ni-6Si-10Al at 1000 °C did not produce an internal oxidation, but formed an alumina layer directly on the alloy surface after an initial stage when also Ni was oxidized. Therefore, silicon exerts the third-element effect by reducing the critical Al content needed for the transition from its internal to its external oxidation with respect to the corresponding Ni-Al alloy. This result is interpreted by means of an extension to ternary alloys of Wagner’s criterion for the same transition in binary alloys based on the attainment of a critical volume fraction of internal oxide.     

烧结温度对Al3Zr/2024Al多孔复合材料的组织与压缩性能的影响

以NaCl为造孔剂,2024Al和Zr粉末为基体,通过造孔剂法制备了Al₃Zr/2024Al多孔复合材料,研究了不同烧结温度对复合材料组织与压缩性能的影响。结果表明:复合材料的孔隙率几乎不受烧结温度影响;烧结温度的升高可促进Al₃Zr在孔壁内生成、扩散和团聚长大;压缩试验结果表明Al₃Zr可明显提高复合材料的压缩性能,压缩强度随烧结温度的升高呈现先增大后减小的趋势,在650℃时屈服强度可达57.12 MPa,平台应力可达56.8 MPa,此时Al₃Zr/2024Al多孔复合材料具有最佳的压缩、吸能性能。     

退火温度对高轧制延展率Al/IF钢多层复合材料力学性能的影响

采用叠轧焊接方法制备Al/IF钢多层复合材料,随后进行300~450 ℃退火处理,并对叠轧态和退火态的微观结构及力学性能进行分析。结果表明:叠轧态Al/IF钢多层复合材料的抗拉强度介于纯Al和IF钢之间,断裂总延伸率相对较低,退火后Al和IF钢层的硬变均高于其原材料;随着退火温度的增加,抗拉强度逐渐降低,断裂总延伸率呈先增加后减小的趋势,在350 ℃退火时,复合材料的综合力学性能最优。退火温度对Al/IF钢多层复合材料力学性能的影响主要体现在对Al层的影响上。     

Effect of Al content on high temperature erosion properties of arc-sprayed FeMnCrAl/Cr_3C_2 coatings

Three types of FeMnCrAl/Cr3C2 coatings with different Al content were deposited on 20# steel substrates by the high velocity arc spraying (HVAS) process. Surface microstructures of the coatings were analyzed by optical microscopy (OM) and X-ray diffractometry (XRD). High temperature erosion (HTE) tests were performed in an erosion tester at different impact angles. The surface morphologies of the eroded coatings were observed on a field emission scanning electron microscope(FE-SEM). The laminated structure is found on all the prepared coatings with the porosity and oxide fraction in the coatings decreasing with the Al content from 0 to 15% (mass fraction). Sample FA3 with 15% Al, possessing the lowest porosity and oxide fraction, has the best HTE resistance, which demonstrates that Al addition can improve the HTE resistance of the coatings. The erosion rate of sample FA1 exhibits a maximum value at 90° impact angle. The maximum erosion rates of both FA2 and FA3 samples appear in the range of 60°-90° impact angles. Erosion loss of the coatings occurs through brittle breaking, cutting and fatigue spalling.     

Thermal stability of electrical properties of ZnO:Al films deposited by room temperature magnetron sputtering

In order to investigate the thermal stability of electrical properties for aluminum doped zinc oxide (ZnO:Al, AZO) films deposited by direct current reactive magnetron sputtering, AZO films deposited from an alloy target (0.8 wt.% Al) on soda-lime glasses were annealed in argon gas at different temperatures. A data capturer was applied to monitor and collect real-time sheet resistance (R_s) of the films throughout the annealing. Results revealed that R_s of the film heated at 100 °C was reduced throughout the annealing, however, conductivity of the films annealed over 100 °C was improved at early stage but then deteriorated all along to the end. Some novel R_s change points which need more penetrations were detected. The experimental results obtained from electron diffraction spectrum, X-ray diffraction pattern, X-ray photoelectron spectrum, and Hall measurement were analyzed to explore the effect of the annealing on the electrical properties of AZO films. It was found that the exotic element, which might influence the film properties, was not observed. It was also suggested that the transformation of the crystalline structure and surface chemical bonding states, which resulted in the decrease of carrier concentration and mobility could be the reason for the conductivity degeneration of the films annealed at higher temperature.     

Al2O3/TiB2/Al复合材料的微观结构和高温力学性能

以细雾化铝粉和TiB₂颗粒为原料,通过粉末冶金和热轧制制备微米TiB₂和纳米Al₂O₃颗粒增强铝基复合材料。室温时,由于TiB₂和Al₂O₃的综合强化作用,Al₂O₃/TiB₂/Al复合材料的屈服强度和抗拉强度分别为258.7 MPa和279.3 MPa,测试温度升至350℃时,TiB₂颗粒的增强效果显著减弱,原位纳米Al₂O₃颗粒与位错的交互作用使得复合材料的屈服强度和抗拉强度达到98.2MPa和122.5 MPa。经350℃退火1000 h后,由于纳米Al₂O₃对晶界的钉扎作用抑制晶粒长大,强度和硬度未发生显著的降低。     

A356浇覆温度对铝/钢复合板界面组织及力学性能的影响

先采用热浸镀铝?锌工艺对Q235钢板进行表面镀层处理,后将液态的A356铝合金定量浇覆于经预热的钢板表面,通过液固铸轧成功制备铝/钢复合板。运用光学显微镜(OM)、SEM观察界面结合与组织形貌,结合EDS、XRD分析界面物相成分,并测试微观硬度、室温拉伸和剪切强度。结果表明:随着浇覆温度的提高,复合板界面间隙消失,整体趋势上扩散层厚度逐渐增加。当浇覆温度为710℃及以上时,界面处会形成Fe3Al、FeAl、FeAl2、Fe2Al5和FeAl3相。在同一浇覆温度下,硬度整体趋势为在Q235和A356基体中保持稳定,而在从Q235侧距界面中心100μm至A356侧距界面中心100μm的范围内连续下降。抗拉强度和剪切强度都表现出先增加后减小的趋势,浇覆温度为710℃时,复合板的成形质量最佳,抗拉强度和剪切强度都为最大,分别为336.4 MPa和137.6 MPa。     

退火温度对异步轧制铜/铝复合板界面组织及力学性能的影响

研究退火温度对异步轧制法制备的铜/铝复合板界面组织及力学性能的影响,采用SEM观察界面组织形貌,结合EDX、XRD分析界面物相成分,采用显微硬度和室温拉伸实验表征复合板的力学性能。结果表明,异步轧制法制备的铜/铝复合板界面形变储能较高,退火温度为400℃时界面扩散明显;随着退火温度的升高,复合界面先后生成金属间化合物CuAl2、Cu9Al4、CuAl相,界面撕裂位置位于金属间化合物之间;界面层的显微硬度比基体的高,这是因为受到硬脆性化合物和高温软化的共同影响;退火温度越高,复合板抗拉强度越低,断裂伸长率越大。研究表明,异步轧制法制备的铜/铝复合板最佳退火温度为400℃。     

应用本构模型和神经网络模型预测铝/镁基纳米复合材料的高温流变行为(英文)

为了预测Al/Mg基纳米复合材料的高温流变行为,在不同的应变速率(0.01-1.0s-)和温度(523,623和1723K)的条件下进行热压缩试验,利用所得到的应力-应变数据,开发了本构模型,比如一般流动方程。阿累尼乌斯双曲模型、Johnson-Cook(JC)和改性的Zerilli-Armstrong(ZA)模型及人工神经网络(ANN)模型。通过使用统计参数,例如均方根误差(RMSE)、回归系数(R2)、平均相对误差(MRE)和分散指数(Is),比较了人工神经网络和不同的本构模型。结果表明,人工神经网络模型对AA5083-2%TiC复合材料的热变形流动应力的评估准确性更高。     

Selective laser sintering/melting (SLS/SLM) of pure Al,Al–Mg,and Al–Si powders: Effect of processing conditions and powder properties

Selective laser sintering/melting (SLS/SLM) processing difficulties of aluminium powders had been attributed to issues associated with laser–materials interaction only while neglecting the role of powder properties. This study provides a wholistic understanding of factors that influence the development of SLS/SLM processing window, densification, and microstructure of pure Al, Al–Mg, and Al–Si powders, fabricated in single and multiple layer parts by exploring the roles of processing and material parameters. It was demonstrated that similarities existing in the SLS/SLM processing maps of the powders could be attributed to similarities in their packing densities with the alloying addition of magnesium and silicon having no predominant effect on their processing maps’ boundaries. Rather, alloying addition has significant effect on the nature of the evolved surface morphology of SLS/SLM processed aluminium powders in their processing windows. In addition, the flow and solidification behaviour of the melt pool of the powders during single layer scan was strongly influenced by the particle morphology and oxygen content of the powders as well as applied energy density. The energy density in the range of 12–16 J/mm² was found to be the threshold below which SLS was predominant and above which SLM occurred for the investigated powders. Moreover, successful oxide disruption phenomena which is necessary for inter-particulate coalescence in multi-layered SLS/SLM processed aluminium powders are found to be mainly controlled by the amount of oxide in the as-received powder, the degree of the uniformity of the distribution of the surface oxide film covering the aluminium particles, the nature of thermal mismatch existing between the oxide film and the parent aluminium particle which was dependent on the phase present in the oxide film. Al–12 wt% Si powder is hereby affirmed as a suitable candidate material for SLS/SLM process due to its low thermal expansion and uniform distribution of its surface oxide films as well as the mullite phase in its oxide film.     

退火温度对1060Al/TA2/CCSB爆炸复合板结合界面 微观组织与力学性能的影响

研究了1060Al/TA2/CCSB爆炸复合板结合界面在不同退火温度下的显微组织、力学性能。结果表明,复合板在其界面处呈现连续均匀分布的波状结合,界面处存在漩涡、熔化块、表面微裂纹和绝热剪切带等缺陷。对复合板进行拉脱测试和剪切测试,拉脱断裂发生在1060Al/TA2界面,1060Al/TA2界面的剪切强度低于TA2/CCSB界面。复合板波状界面的存在,阻碍了拉伸过程中的颈缩过程,使复合板塑性提高。随着退火温度升高到400℃,结合界面发生回复,消除了加工硬化效应,使得界面硬度降低;ASB消失并转变为等轴α晶粒,缺陷减少;界面处的熔化块发生溶解,使复合板结合界面组织结构更加均匀,获得良好的综合性能。     

HfB2/SiC as a protective coating for 2D Cf/SiC composites: Effect of high temperature oxidation on mechanical properties

In the field of thermal shielding for aerospace applications C_f/SiC composites are raising great interest, provided that they are protected from oxidation by suitable coatings. Conversely, ultra high temperature ceramics, and in particular HfB₂, are among the best oxidation resistant materials known. A coating made of a HfB₂/SiC composite (20% weight SiC) was tested as an oxidation protection on a C_f/SiC composite. The composite was produced by Polymer Impregnation Pyrolysis (PIP), which is a simple and low cost method; the coating was applied by painting a slurry on the surface of the composite and by heat treating. The thermal behaviour was studied by thermo-gravimetric analysis, and mechanical tests were conducted before and after oxidation. The HfB₂/SiC composite seems to effectively protect the underlying C_f/SiC composite, with a mechanical strength reduction of only 20% after 30 min at 1600 °C, even if some weight loss due to partial carbon fibre damage is observed. A first analysis of thermal cycling in oxidizing environment suggested that the HfB₂/SiC coating reduces continual damage thanks to the sealing effect of the glassy surface layer.