Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO2/n-GaN metal-insulator-semiconductor structures

In the present work, we have investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/SiO₂/n-GaN metal-insulator-semiconductor (MIS) Schottky diode and compared with Au/n-GaN metal-semiconductor (MS) Schottky diode. Calculations showed that the Schottky barrier height and ideality factor of the MS Schottky diode is 0.79 eV (I-V), 0.87 eV (C-V) and 1.45, respectively. It is observed that the Schottky barrier height increases to 0.86 eV (I-V), 0.99 eV (C-V) and ideality factor deceases to 1.3 for MIS diode. For the MS diode, the calculated doping concentration is 4.17 × 10¹⁷ cm⁻³. However, in the case of the MIS Schottky diode, the decrease in doping concentration is observed and the respective value is 2.08 × 10¹⁷ cm⁻³. The obtained carrier concentration of the MIS diode is reduced about 50% when compared to the MS diode. The interface state density as determined by Terman's method is found to be 3.79 × 10¹² and 3.41 × 10¹⁰ cm⁻² eV⁻¹ for the MS and MIS Schottky diodes, respectively. The calculated interface densities are 2.47 × 10¹¹ cm⁻² eV⁻¹, 3.35 × 10¹¹ cm⁻² eV⁻¹ and 3.5 × 10¹¹ cm⁻² eV⁻¹ for the sweep rates of 300, 450 and 600 mV/s from MOS C-V measurements for the MIS Schottky diode. The interface state density calculated from Terman's method is found to be increased with sweep rate. From the C-V measurement, it is noted that the decrease in the carrier concentration in MIS diodes as compared to MS diode may be due to the presence of oxide interfacial layer. DLTS measurements have also been performed on MIS Schottky diode and discussed.     

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

In this study, the main electrical parameters, such as doping concentration (N_D), barrier height (Φ_CV), depletion layer width (W_D), series resistance (R_s) and Fermi energy level (E_F), of GaAs/Al_xGa_1−xAs single quantum well (SQW) laser diodes were investigated using the admittance spectroscopy (C-V and G/ω-V) method in the temperature range of 80-360 K. The reverse bias C⁻² vs. V plots gives a straight line in a wide voltage region, especially in weak inversion region. The values of Φ_CV at the absolute temperature (T = 0 K) and the temperature coefficient (α) of barrier height were found as 1.22 eV and −8.65 × 10⁻⁴ eV/K, respectively. This value of α is in a close agreement with α of GaAs band gap (−5.45 × 10⁻⁴ eV/K). Experimental results show that the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the diode are affected by not only temperature but also R_s. The capacitance-voltage-temperature (C-V-T) and conductance-voltage-temperature (G/ω-V-T) characteristics confirmed that temperature and R_s of the diode have effects on the electronic parameters in SQW laser diodes.     

Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

The variations in the electrical properties of Cr Schottky contacts formed by electrodeposition technique on n-type Si substrate have been investigated as a function of temperature using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 80-320 K by steps of 20 K. The basic diode parameters such as ideality factor (n) and barrier height (Φ_b) were consequently extracted from the electrical measurements. It has been seen that the ideality factor increased and the barrier height decreased with decreasing temperature, when the I-V characteristics were analyzed on the basis of the thermionic emission (TE) theory. The abnormal temperature dependence of the Φ_b and n and is explained by invoking two sets of Gaussian distribution of barrier heights at 320-200 K, and 180-80 K. The double Gaussian distribution analysis of the temperature-dependent I-V characteristics of the Cr/n-type Si Schottky contacts gave the mean barrier heights of 0.910 and 0.693 eV and standard deviations (σ_s) of 109 mV and 72 mV, respectively. Then, these values of the mean barrier height have been confirmed with the modified ln(I₀/T²) − q²/2k²T² versus 1/T plot which belongs the two temperature regions.     

On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

The structural and optical properties of CdS films deposited by evaporation were investigated. X-ray diffraction study showed that CdS films were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. The study has been made on the behavior of Cu/n-CdS thin film junction on SnO₂ coated glass substrate grown using thermal evaporation method. The forward bias current-voltage (I-V) characteristics of Cu/CdS/SnO₂/In-Ga structures have been investigated in the temperature range of 130-325 K. The semi-logarithmic lnI-V characteristics based on the Thermionic emission (TE) mechanism showed a decrease in the ideality factor (n) and an increase in the zero-bias barrier height (Φ_Bo) with the increasing temperature. The values of n and Φ_Bo change from 8.98 and 0.29 eV (at 130 K) to 3.42 and 0.72 eV (at 325 K), respectively. The conventional Richardson plot of the ln(I_o/T²) vs q/kT shows nonlinear behavior. The forward bias current I is found to be proportional to I_o(T)exp(AV), where A is the slope of ln(I)-V plot and almost independent of the applied bias voltage and temperature, and I_o(T) is relatively a weak function of temperature. These results indicate that the mechanism of charge transport in the SnO₂/CdS/Cu structure in the whole temperature range is performed by tunneling among interface states/traps or dislocations intersecting the space-charge region. In addition, voltage dependent values of resistance (R_i) were obtained from forward and reverse bias I-V characteristics by using Ohm's law for each temperature level.     

Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380 K with 20 K intervals. The short current density (J_sc) and open circuit voltage (V_oc) parameters have been determined between 40 and 100 mW/cm². The photovoltaic parameters of the device have been also determined under 100 mW/cm² and AM1.5 illumination condition.     

Enthalpy of formation of selected mixed oxides in a CaO-SrO-Bi2O3-Nb2O5 system

The heats of drop-solution in 3Na₂O + 4MoO₃ melt at 973 K and 1073 K for calcium and strontium carbonates, Bi₂O₃, Nb₂O₅ and several stoichiometric mixed oxides in CaO-Nb₂O₅, SrO-Nb₂O₅ and Bi₂O₃-Nb₂O₅ systems were measured using a Setaram Multi HTC-96 calorimeter. The values of enthalpy of formation from constituent binary oxides at 298 K, Δ_oxH, were derived for the mixed oxides under investigation: Δ_oxH(CaNb₂O₆) = −132.0 ± 23.8 kJ mol⁻¹, Δ_oxH(Ca₂Nb₂O₇) = −208.0 ± 31.9 kJ mol⁻¹, Δ_oxH(SrNb₂O₆) = −167.9 ± 19.1 kJ mol⁻¹, Δ_oxH(Sr₂Nb₂O₇) = −289.2 ± 37.5 kJ mol⁻¹ and Δ_oxH(BiNbO₄) = −41.9 ± 11.1 kJ mol⁻¹. Additionally, the values Δ_oxH for other mixed oxides with different stoichiometries were estimated on the basis of these experimental results.     

Electrical characterization of a-Si:H(n)/c-Si(p) structure

In this study, n-type hydrogenated amorphous silicon (a-Si:H) was fabricated on p-type crystalline silicon (c-Si) substrates to obtain heterojunction diodes. The amorphous films were obtained by the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Temperature dependent current-voltage (I-V-T) measurements and investigation of the dc current injection mechanism of a-Si:H(n)/c-Si(p) device structure have been performed. The series resistance (4.6-8.2 Ω) values displayed nearly temperature independent behavior and the ideality factor varied between 2.7 and 1.6 in the temperature range 100-320 K. The forward bias I-V-T characteristics of c-Si/a-Si:H heterojunctions are found to behave like the Schottky junctions where carrier injection is especially influenced by the carrier generation-recombination in the junction interface formed on the amorphous side. The temperature dependent ideality factor behavior shows that tunneling enhanced recombination is valid rather than thermionic emission theory. In the frame of this model, characteristic tunneling energy and characteristic temperature are found to be 9 meV and 1900 K, respectively. It is concluded that fabricate n-type hydrogenated amorphous silicon is a preferable semiconductor material layer with low interface state density because the temperature dependent interface state density calculations give values of the order of 10¹⁴ eV⁻¹ cm⁻².     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Role of vapor pressure of 1,4-bis(trimethylsilyl)benzene in developing silicon carbide thin film using a plasma-assisted liquid injection chemical vapor deposition process

The temperature dependence equilibrium vapor pressure (p_e)_T data yielded a straight line when ln(p_e) was plotted against the reciprocal temperature in the range of 312.82-367.12 K, leading to a standard enthalpy of sublimation (Δ_subH°) value of 68.2 ± 0.8 kJ mol^− 1 for 1,4-bis(trimethylsilyl)benzene (TMSB). From the depression of the melting point in the DTA-mode, the standard enthalpy of fusion (Δ_fusH°) was found to be 26.9 ± 2.5 kJ mol^− 1. A thin film of silicon carbide was grown on graphite substrate at 573 K using TMSB or bis(trimethylsilyl)acetylene as precursors. The deposited films were characterized by scanning electron microscopy and energy dispersive X-ray analysis for their composition and morphology.     

The studies of phase relation, microstructure, magnetic transition, magnetocaloric effect in (Gd1−xErx)5Si1.7Ge2.3 compounds

The phase relation, microstructure, Curie temperatures (T_C), magnetic transition, and magnetocaloric effect of (Gd_1−xEr_x)₅Si_1.7Ge_2.3 (x = 0, 0.05, 0.1, 0.15, and 0.2) compounds prepared by arc-melting and then annealing at 1523 K (3 h) using purity Gd (99.9 wt.%) are investigated. The results of XRD patterns and SEM show that the main phases in those samples are mono-clinic Gd₅Si₂Ge₂ type structure. With increase of Er content from x = 0 to 0.2, the values of magnetic transition temperatures (T_C) decrease linearly from 228.7 K to 135.3 K. But the (Gd_1−xEr_x)₅Si_1.7Ge_2.3 compounds display large magnetic entropy near their transition temperatures in a magnetic field of 0-2 T. The maximum magnetic entropy change in (Gd_1−xEr_x)₅Si_1.7Ge_2.3 compounds are 24.56, 14.56, 16.84, 14.20, and 13.22 J/kg K⁻¹ with x = 0, 0.05, 0.1, 0.15, and 0.2, respectively.     

The Mn-doping effect on the charge ordering state of La1/3Sr2/3FeO3

The longitudinal ultrasonic velocity (V_l), as well as resistivity has been measured in single-phase polycrystalline La_1/3Sr_2/3Fe_1−xMn_xO₃ (x = 0, 0.025, 0.05) at a frequency of 10 MHz, from 20 K to 300 K. It is found that with increasing Mn-doping level, the resistivity increases and the charge ordering transition temperature T_CO shifts to lower temperature. For all samples, upon cooling down from 300 K, a substantial softening in V_l above T_CO and dramatic stiffening below T_CO are observed. This abnormal elastic softening above T_CO can be described well by the mean-field theory, which indicates that this feature is due to the electron-phonon coupling via the Jahn-Teller effect and this coupling is enhanced with the Mn doping. Below T_CO, another softening in V_l is observed for x = 0, and weakens with the increasing of Mn content. This character is attributed to the breathing-type distortion of Fe-O octahedron and suggests that the charge disproportionation (CD) transition is suppressed by the Mn substitution.     

Synthesis, thermal stability and properties of [(Fe1−xCox)72Mo4B24]94Dy6 bulk metallic glasses

A series of [(Fe_1−xCo_x)₇₂Mo₄B₂₄]₉₄Dy₆ (x = 0.1, 0.2, 0.3, 0.4 and 0.5 at.%) bulk metallic glasses (BMGs) in rod geometries with critical diameter up to 3 mm were fabricated by copper mold casting method. This alloy system exhibited good thermal stability with high glass transition temperature (T_g) 860 K and crystallization temperature (T_x) 945 K. The addition of Co was found to be effective in adjusting the alloy composition deeper to eutectic, leading to lower liquidus temperature (T_l). The [(Fe_0.8Co_0.2)₇₂Mo₄B₂₄]₉₄Dy₆ alloy showed the largest supercooled liquid region (ΔT_x = T_x − T_g = 92 K), reduced glass transition temperature (T_rg = T_g/T_l = 0.622) and gamma parameter (γ = T_x/(T_g + T_l) = 0.424) among the present system. Maximum compressive fracture strength of 3540 MPa and micro-Vickers hardness of 1185 kg/mm² was achieved, resulting from the strong bonding structure among the alloy constituents. The alloy system possessed soft magnetic properties with high saturation magnetization of 56.61-61.78 A m²/kg and coercivity in the range of 222-264.2 A/m, which might be suitable for application in power electronics devices.     

Optical spectra and excited state relaxation dynamics of Nd in CaF2 single crystal

Nd-doped CaF₂ crystal with high optical quality was obtained by a temperature gradient technique (TGT). Energies of the crystal field levels of Nd³⁺ multiplets relevant to laser operation were determined based on optical spectra recorded at T = 10 K. Room temperature absorption spectra were analyzed in the framework of the Judd-Ofelt theory to calculate radiative transition rates and luminescence branching ratios for the ⁴F_3/2 level. The ⁴F_3/2 radiative lifetime was calculated to be 1295 μs whereas a monotonous decrease of the ⁴F_3/2 luminescence lifetime value from 1.45 ms to 0.9 ms was observed when the temperature increased from 10 K to 300 K. The stimulated emission cross-section of 1.48 × 10⁻²⁰ cm² at 1061 nm was determined using the Fuchtbauer-Ladenburg relation. All the results showed that Nd:CaF₂ would be a promising gain media in solid-state lasers.     

Heat capacity measurements and XPS studies on uranium-lanthanum mixed oxides

Heat capacity measurements were carried out on (U_1−yLa_y)O_2±x (y = 0.2, 0.4, 0.6, and 0.8) using differential scanning calorimeter (DSC) in the temperature range 298-800 K. Enthalpy increment measurements were carried out on the above solid solutions using high temperature drop calorimetry in the temperature range 800-1800 K. Chemical states of U and La in the solid solutions of mixed oxides were determined using X-ray photoelectron spectroscopy (XPS). Oxygen to metal ratios of (U_1−yLa_y)O_2±x were estimated from the ratios of different chemical states of U present in the sample. Anomalous increase in the heat capacity is observed for (U_1−yLa_y)O_2±x (y = 0.4, 0.6 and 0.8) with onset temperatures in the range of 1000-1200 K. The anomalous increase in the heat capacity is attributed to certain thermal excitation process, namely, Frenkel pair defect of oxygen. The heat capacity value of (U_1−yLa_y)O_2±x (y = 0.2, 0.4, 0.6, and 0.8) at 298 K are 65.3, 64.1, 57.7, 51.9 J K⁻¹ mol⁻¹, respectively. From the XPS investigations, it was observed that the O/M ratios at the surface are higher than that in the bulk. In uranium rich mixed oxide samples, the surface O/M ratios are greater than 2 whereas that in La rich mixed oxides, they are less than 2, though the bulk O/M in all the samples are less than 2.     

Hydrothermal synthesis of superconductors Ba1−xKxBiO3 and double perovskites Ba1−xKxBi1−yNayO3

Superconductors Ba_1−xK_xBiO₃ and body-centered double perovskites Ba_1−xK_xBi_1−yNa_yO₃ have been selectively synthesized by a facile hydrothermal route. The appropriate ratio and adding sequence of initial reagents, alkalinity, reaction temperature and time are the critical factors that influence the crystal growth of the compounds. The purity and homogeneity of the crystals were detected by the ICP, SEM, EDX and TEM studies. Magnetic measurements show that the superconducting transition temperatures T_C of Ba_1−xK_xBiO₃ decrease from 22 K (for x = 0.35) to 8 K (for x = 0.55) with increasing the K doping level.     

Phase transition and piezoelectric properties of K0.48Na0.52NbO3-LiTa0.5Nb0.5O3-NaNbO3 lead-free ceramics

Plate-like NaNbO₃ (NN) particles were used as the raw material to fabricate (1 − x)[0.93 K_0.48Na_0.52Nb O₃-0.07Li(Ta_0.5Nb_0.5)O₃]-xNaNbO₃ lead-free piezoelectric ceramics using a conventional ceramic process. The effects of NN on the crystal structure and piezoelectric properties of the ceramics were investigated. The results of X-ray diffraction suggest that the perovskite phase coexists with the K₃Li₂Nb₅O₁₅ phase, and the tilting of the oxygen octahedron is probably responsible for the evolution of the tungsten-bronze-typed K₃Li₂Nb₅O₁₅ phase. The Curie temperature (T_C) is shifted to lower temperature with increasing NN content. (1 − x)[0.93 K_0.48Na_0.52NbO₃-0.07Li(Ta_0.5Nb_0.5)O₃]-xNaNbO₃ ceramics show obvious dielectric relaxor characteristics for x > 0.03, and the relaxor behavior of ceramics is strengthened by increasing NN content. Both the electromechanical coupling factor (k_p) and the piezoelectric constant (d₃₃) decrease with increasing amounts of NN. 0.01-0.03 mol of plate-like NaNbO₃ in 0.93 K_0.48Na_0.52NbO₃-0.07Li(Ta_0.5Nb_0.5)O₃ gives the optimum content for preparing textured ceramics by the RTGG method.     

Effect of high temperature sintering on the structural and the magnetic properties of La1.4Ca1.6Mn2O7

We investigate the effect of sintering temperature on the structural and magnetic properties of La_1.4Ca_1.6Mn₂O₇ double perovskite manganite compound prepared by the sol-gel route. Three sintering temperatures (1273, 1473 and 1673 K) are utilized for the heat treatment. Regardless of the sintering temperature, the tetragonal crystal structure with the I4/mmm space group is stable. However, a reduction in a and an increase in c lattice parameters along with a significant increase in crystallite-size occur on increasing the sintering temperature. This is also accompanied by the growth of grains. Grain-growth and changing crystallite-sizes account for the changes in magnetization, Curie temperature and magnetic entropy-change values. As the sintering temperature increases from 1273 to 1673 K the Curie temperature increases from 225 to 268 K and the magnetic entropy-change increases from 0.58 to 3.1 J kg⁻¹ K⁻¹ respectively.     

Effect of the sintering temperature on the properties of nanocrystalline Ca1−xSmxMnO3 (0 ≤ x ≤ 0.4) powders

Nanocrystalline Ca_1−xSm_xMnO₃ (0 ≤ x ≤ 0.4) manganites were prepared by a soft chemical method (Pechini method) followed by auto-combustion and sintering in air at 1073 or 1473 K. Single-phase powders with general composition Ca_1−xSm_xMnO₃ were obtained after 18 h annealing. The particle and grain sizes of the substituted Sm-manganites did not exhibit variation with samarium content, but increase with increasing the sintering temperature. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹ characteristic of the BO₆ octahedron vibrations.For the samples sintered at T_s = 1473 K, the partial substitution of calcium by samarium in the CaMnO₃ phase induces a marked decrease in the electrical resistivity, in the temperature range of 300-900 K, and at the same time a metal-to-insulator transition occurs; for T_s = 1073 K all the samples present semiconductor behaviour. With the increase of the annealing temperature the grain size increases and a metal-semiconductor transition appears. The results can be ascribed to the Mn⁴⁺/Mn³⁺ ratio and particle grain size. The effects of particle size on the electrical properties can be attributed to the domain status, changes in the Mn-O-Mn bond angle and Mn-O bond length.