A Ka-band narrow bandpass filter using LTCC technology

A Ka-band low-temperature co-fired ceramic (LTCC) narrow bandpass filter (BPF) is presented first. This BPF shows a very narrow 3 dB fractional bandwidth of 4.5% centered at 28.7 GHz. The advantages of multilayered LTCC technology such as high integration and vertical stacking capabilities were employed to design a three-dimensional interdigital end-coupled embedded microstrip narrow BPF. The difficulties in controlling the precise distance between two adjacent resonators in LTCC end-coupled BPF were overcome by locating the resonators on different layers. The measured insertion loss is 3 dB at 28.7 GHz.     

Highly selective bandpass filter based on substrate integrated waveguide

A novel highly selective six-pole elliptic filter based on a substrate integrated waveguide (SIW) is proposed for the first time. The filter is composed of two planar SIW extend doublets. The modular design approach based on cascading small building blocks is adopted to reduce the effect of manufacturing tolerance on the performance of the filter. The proposed filter can produce four finite transmission zeros, and has an excellent stopband rejection characteristic. Measured results are presented and compared with results simulated by a high frequency structure simulator. Good agreement between simulated and measured results is observed.     

A millimeter-wave bandpass waveguide filter using a width-stacked silicon bulk micromachining approach

A 30-GHz bandpass filter is realized in a novel waveguide topology, through the use of bulk micromachining of standard (low-resistivity) silicon wafers. In this new design, the width of the rectangular waveguide structure is created through the stacking of etched silicon wafer pieces. This width-stacking approach eliminates the presence of convex corners in the design, resulting in more controllable etching. Also, this design enables the simple implementation of the split-block technique, which alleviates Ohmic contact resistance issues. This latter aspect, combined with a double-sided etching strategy that enables deep cavities to be formed, leads to very high-Q silicon micromachined resonators (Q/sub 0//spl ap/4500). A three-cavity bandpass filter was fabricated and tested leading to a deembedded insertion loss of 1dB at a center frequency of 29.7GHz, with a 3-dB bandwidth of 0.654GHz (2.2%). These results validate this new micromachined waveguide approach, and demonstrates a significant improvement over other millimeter-wave micromachined waveguide filters.     

基片集成波导K波段平面滤波器研制

利用基片集成波导与传统矩形波导的等效关系,类比矩形波导滤波器理论设计方法,结合三维电磁仿真软件模拟和优化技术,快速设计了K波段基片集成波导带通滤波器。实物测试结果显示滤波器的中心频率为19.75GHz,相对带宽6%,通带内插入损耗为1 dB,带内反射系数小于–14 dB,体积小于6 cm×2 cm×1 cm。相比传统波导形式滤波器,本设计为平面结构,体积小、易于系统集成。     

波导带通滤波器与微带转换装置的设计

利用三维仿真软件HFSS首先设计了K波段7阶电感E面带通波导滤波器,以及波导-微带转换器.其中波导滤波器的中心频率为19 GHz,带宽为3 GHz,带内损耗小于0.1 dB,端口反射小于-20 dB;而波导-微带的转换器在16～20.8 GHz的带宽内端口反射小于-20 dB,带内损耗小于0.1 dB.然后将两者有效结合为一体,其工作带宽为17.5～20.5 GHz,带内损耗为0.3 dB,端口反射小于-15 dB,带外抑制小于-30 dB,可以满足实际系统应用的需求.     

Compact-size coplanar waveguide bandpass filter

A compact-size coplanar waveguide (CPW) bandpass filter (BPF) is proposed. In this study, we use the bended stub with novel folded skill to improve the three parallel coupled-lines structure of BPF for N = 1. It gets the sharp transition band (TB) and reduces the dimension of the circuit by 66.67% at 2.45 GHz. Its center frequency can be shifted easily by adjusting the interfaces of SS and S'S' simultaneously. It is very useful for applications in the wireless communication systems.     

Coplanar waveguide active bandpass filter

A novel microwave active bandpass filter has been designed in a coplanar waveguide. The approach uses a GaAs FET to link two end-coupled resonators. The realised active filter not only compensates for the losses as compared to a passive filter but also provides an overall gain of 17.54 dB. Flexibility in tuning the filter response through the bias voltage and its superior performance at the harmonics over the passive filters are among the advantages of the design     

Ultra-wideband bandpass filter using back-to-back CBCPW-to-CBCPW transition

A new ultra-wideband bandpass filter using a back-to-back CBCPW-to-CBCPW transition structure is presented. The filter is composed of two CBCPW-to-CBCPW transitions and a section of a CBCPW line section used as a multiple-mode resonator. Using this transition, a new ultra-wideband filter prototype was designed, fabricated and measured. Obtained results show that the proposed filter can easily cover the band from 3.1 to 10.6 GHz.     

A high-dynamic-range integrated continuous-time bandpass filter

An eighth-order Butterworth bandpass filter, operating at 100 kHz with a quality factor of 14.3, is presented. The filter features an optimized dynamic range, a large tuning range, and a small occupied chip area of 0.25 mm² owing to very simple circuitry. Measurements show a very accurate realization of the desired transfer function, a high dynamic range of 62 dB, and a tuning range from 50 to 200 kHz. It is shown how the dynamic range can be improved to a theoretical maximum if circuit simplicity is sacrificed     

Micromachined V-band CMOS bandpass filter with 2 dB insertion loss

A low-insertion-loss V-band CMOS bandpass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (vz1) and the high-frequency transmission-zero (vz2) can be tuned by the series-feedback capacitor Cs and the parallelfeedback capacitor Cp, respectively. To reduce the substrate loss, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, this filter achieved insertion loss (1/S21) lower than 3 dB over the frequency range 52.5?76.8 GHz. The minimum insertion loss was 2 dB at 63.5 GHz, the best results reported for a V-band CMOS bandpass filter in the literature.     

Ultra-wideband bandpass filter using back-to-back microstrip-to-CPW transition structure

A novel ultra-wideband bandpass filter is proposed on a back-to-back microstrip-to-CPW transition structure. A multiple-mode resonator on a CPW is formed to allocate its first three resonant modes around the lower-end, centre and upper-end of the 3.1 to 10.6 GHz UWB passband. Its two sides are fed by two microstrip-to-CPW transitions with enhanced frequency-dispersive coupling degree. The designed filter exhibits good UWB passband behaviour with insertion loss <0.5 dB and group delay variation <0.35 ns.     

A narrow bandpass microstrip filter for high-speed fiber opticsystems

Transmission systems employing passively retimed regenerators require a bandpass timing filter to extract the timing wave from the data stream. Typically, filters with Q exceeding 100 are necessary in long-haul fiber-optic systems. The fabrication of a microstrip filter with a loaded Q of over 500 and an insertion loss of 8 dB, is reported. The midband return loss in 4.8 dB. The filter is fabricated on a 1-in×1-in×1-in Ba₂Ti₉ O₂₀ substrate. This material has a dielectric constant of about 39 and can be formulated with temperature coefficients of resonant frequency from -2 to +6 p.p.m./°C. The fabricated device has a temperature coefficient of +2 p.p.m./°C. This combination of material properties facilitates high Q and small filter size and has the potential to compensate for temperature-induced electronic phase shifts between signal and clock recovery paths to the bit-decision circuit     

截止波导带通滤波器的设计

简述了截止波导带通滤波器的基本设计原理,并实现了一款小型化的超窄带带通滤波器。中心频率为3.65 GHz,带宽为30 MHz。体积仅为42 mm×11 mm×7.5 mm,带内插入损耗小于6 dB,带内反射小于-22 dB,阻带的衰减曲线相当陡峭。通过的实验证实了该方法的可行性和正确性。     

A new compact LTCC bandpass filter using negative coupling

This letter presents the design and realization of a new compact bandpass filter (BPF) fabricated on multilayered ceramic substrates. This BPF features coupled resonators with negative coupling coefficients. A BPF with center frequency 2.45 GHz is designed and fabricated. Its size is only 2.0 mm/spl times/1.8 mm/spl times/0.67 mm when implemented by a standard low temperature co-fired ceramic technology. The size reduction is due to the higher coupling coefficient between the negatively-coupled resonators than the positively-coupled ones, allowing tighter space between the resonators. The measured insertion losses of the previous BPF were less than 3dB and return losses more than 18dB in the passband. The measured result agrees very well with the electromagnetic (EM) designed response.     

Novel half-mode substrate integrated waveguide bandpass filters using semi-hexagonal resonators

In this paper, a novel bandpass filter is presented, designed, and implemented by using a triple mode semi-hexagonal Half-Mode Substrate Integrated Waveguide (HMSIW) cavity, which has the advantages of compact size, low insertion loss, and high selectivity in upper and lower passband. To realize a triple mode filter, the first resonant mode is shifted to near the next two modes using a via hole perturbation. Two microstrip open stubs connected to open edge of HMSIW resonator are introduced to generate two transmission zeros in the lower passband. The position of transmission zeros could be controlled by adjusting the coupling gap between the microstrip open stub resonators. By etching an E-shape slot on the top plate of HMSIW resonator, two other transmission zeros are produced in the upper passband. A wide-band planar six-pole bandpass filter, which has the advantages of wide bandwidth and small size, is also proposed and fabricated by cascading two triple mode resonators. Measured results indicate that 29% and 47% fractional bandwidth, as well as approximately 1 dB and 1.1 dB insertion loss, are achieved for the proposed filters. Measured results of all those filters agree well with the simulated results.     

Single-Cavity triangular substrate integrated waveguide bandpass filter with complementary triangular split ring resonator

A novel single-cavity equilateral triangular substrate integrated waveguide (TSIW) bandpass filter (BPF) with a complementary triangular split ring resonator (CTSRR) is designed in this paper. A metallic via-hole is used to split the degenerate modes and adjust the transmission zeros (TZs) properly. Meanwhile, the CTSRR is utilized as a resonator to work together with the degenerate modes of the TSIW cavity. The resonant frequency of the CTSRR can be adjusted by its own size. Meanwhile, a TZ is observed in the lower band due to the CTSRR. Finally, a 16% 3dB fractional bandwidth (FBW) triple-mode TSIW BPF with three TZs in both lower and upper bands is simulated, fabricated, and measured. There is a good agreement between the simulated and measured ones.     

新型微带带通滤波器设计

提出一种新型微带带通滤波器设计,它是由带有J-变频器的零阶谐振ZOR（zeroth-order resonant）系统构成。零阶谐振系统以互补分裂谐振环和一系列沟道组成的左手材料LHM（Left—HandedMaterial）为基本单元,在传统设计的基础上进行改进．得到适合具有严格设计要求的滤波器设计使用模型,并给出此零阶谐振系统的共振频率和导纳斜率参数的确定方法。实验表明,该微带带通滤波器的模拟量与测量之间存在最佳关系,并具有高选择性能、对称的响应曲线以及良好的通带带宽控制性能。     

新型微带带通滤波器设计

提出一种新型微带带通滤波器设计,它是由带有J-变频器的零阶谐振ZOR(zeroth-order resonant)系统构成.零阶谐振系统以互补分裂谐振环和一系列沟道组成的左手材料LHM(Left-Handed Material)为基本单元,在传统设计的基础上进行改进,得到适合具有严格设计要求的滤波器设计使用模型,并给出此零阶谐振系统的共振频率和导纳斜率参数的确定方法.实验表明,该微带带通滤波器的模拟量与测量之间存在最佳关系,并具有高选择性能、对称的响应曲线以及良好的通带带宽控制性能.     

Design of dual-band bandpass coplanar waveguide filter

Several recent applications in communications require filters that can operate in two or more frequency bands. The aim of this article is to exploit the advantages of coplanar waveguides (CPWs) to design a dual-band bandpass coplanar waveguide filter (DBBPF). Starting from the prototype of a two pole Chebyshev low pass filter, two frequency transformations are applied to generate the DBBPF's lumped equivalent circuit. These circuits are then implemented using compact CPW series-connected resonators patterned in the centre conductor. The designed filter operates at the two frequency bands centred at 1.7 GHz and 2.7 GHz. Measured results are obtained and compared to HFSS-simulated results with very good agreement.     

新型硅基MEMS集成光波导加速度传感器

本文设计了一种新型硅基ＭＥＭＳ集成光强调制型光波导加速度传感器，在同一 集成了分束器、悬臂梁、质量块、光波导、光探测器等元件，解决了光纤传感器向微型化发展时遇到的装配困难及长期稳定性差等问题，讨论了利用现有工艺在硅基片上实现ＭＥＭＳ集成光波导加速度传感器的可行性。