库仑场对抛物线性限制势二能级系统量子点量子比特概率密度的影响

在抛物量子点中电子与体纵光学声子强耦合且在库仑场束缚条件下, 应用Pekar变分方法, 得出了电子的基态和第一激发态的本征能量及基态和第一激发态的本征波函数。 以量子点中这样的二能级体系作为一个量子比特。当电子处于基态和第一激发态的叠加态时, 计算出电子在时空中作周期性振荡的概率分布。并且得出了概率分布与库仑场、耦合强度、受限强度的变化关系。     

柱形量子点中量子比特的消相干时间

通过求解柱形量子点的能量本征方程,得到极化子的基态和第一激发态的本征能量以及本征波函数,进而根据基态和第一激发态构造一个量子比特。数值计算讨论了消相干时间与色散系数、电子-体纵光学声子耦合强度、柱形量子点的半径及柱高的变化关系。     

盘型量子点中极化子的温度效应

在考虑电子与体纵光学声子强耦合的条件下,通过求解能量本征方程,得出了盘型量子点中电子的基态能量、第一激发态能量及其相应的本征波函数;采用幺正变换和元激发理论方法研究了圆盘型量子点的声子效应,并讨论了温度对量子盘中极化子性质的影响。数值计算表明：在温度较低时,声子不能被激发,温度对能量无影响,当温度较高时,声子能够被激发,且温度愈高,被激发的声子数愈多,极化子能量愈大;结果还表明基态能量随着电子-声子耦合强度的增大而减小,随量子盘半径的增大而减小. 说明量子盘具有明显的量子尺寸效应。     

量子环中电子的激发能量和跃迁谱线频率

在量子环中电子与体纵光学声子强耦合的情况下,通过求解能量本征方程,得出了电子的基态和第一激发态的本征能量及其波函数.数值计算结果表明:电子的激发能量和跃迁谱线频率随着电子-声子耦合强度的增大而增大,并且随着量子环内径(或外径)的增大而减小。     

抛物量子点中的二能级体系

采用Pekar类型的变分方法,在抛物量子点中电子与体纵光学声子（LO）强耦合的条件下,得出了电子的基态,第一激发态的能量及相应的波函数。讨论了电子-声子耦合强度,量子点受限长度对电子在基态∣0〉, 激发态∣1〉,叠加态时的概率密度分布的影响。结果显示叠加态时的概率密度随着电子-声子耦合强度的增加而增大,随着量子点受限长度的减小而增大。该结果对以量子点制备量子比特有重要的指导意义。     

压缩态变分法研究抛物量子点中强耦合极化子的性质

研究了抛物量子点中强耦合极化子的性质。采用基于逐次正则变换的变分方法,利用单模压缩态变换处理包含声子产生湮灭算符的双线性项,得到了仅在考虑电子与体纵光学声子相互作用情况下,在电子-声子强耦合极限下抛物量子点中极化子的基态能量及电子周围光学声子平均数的数学表达式,并分别讨论了有效受限长度、电子-体纵光学声子耦合常数与基态能量和声子平均数之间的变化关系。     

库仑场对量子点中极化子性质的影响

采用基于逐次正则变换的变分方法,利用单模压缩态变换处理包含声子产生湮灭算符的双线性项,研究了抛物量子点中束缚极化子的性质. 得到了在电子-体纵光学声子强﹑弱耦合极限下抛物量子点束缚极化子的基态能量及电子周围平均声子数. 讨论了受限长度,电子-体纵光学声子耦合常数,库仑结合参数与基态能量和平均声子数之间的依赖关系.     

库仑场对量子点中极化子性质的影响

采用基于逐次正则变换的变分方法,利用单模压缩态变换处理包含声子产生湮灭算符的双线性项,研究了抛物量子点中束缚极化子的性质. 得到了在电子-体纵光学声子强﹑弱耦合极限下抛物量子点束缚极化子的基态能量及电子周围平均声子数. 讨论了受限长度,电子-体纵光学声子耦合常数,库仑结合参数与基态能量和平均声子数之间的依赖关系.     

抛物量子点中弱耦合极化子声子色散效应

利用线性组合算符和幺正变换相结合的方法,研究了声子色散对抛物量子点中弱耦合极化子性质的影响．计及体纵光学（LO）声子抛物色散,导出了量子点中极化子的基态能量和自陷能随量子点有效受限长度、电子-纵光学声子耦合常数和声子色散系数的变化关系．数值计算结果表明基态能量随声子色散系数的增大而减小,而自陷能随声子色散系数的增大而增大．     

抛物量子阱中强耦合极化子的基态能量计算

采用线性组合算符和幺正变换相结合的变分方法,研究了电子与体纵光学声子强耦合情况下抛物量子阱中极化子的基态能量。给出了抛物量子阱中强耦合极化子的基态能量与量子阱受限强度和电子-体纵光学声子耦合强度的关系。通过数值计算,结果表明:强耦合极化子的基态能量随量子阱受限强度的增大而增大,随电子-体纵光学声子耦合强度的增大而减小。随量子阱受限强度的减小,基态能量趋于晶体材料的结果。抛物量子阱增强了极化子的基态能量。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.