一台新型的宽束离子束混合装置

本文描述了材料表面改性或优化的新型宽束离子束混合装置。系统含有引出离子不同能量范围的三种离子源。可用于单离子注入,离子束混合,单离子或反应离子束溅射淀积以及离子束增强淀积。它装备有大的水冷却台,可进行各种复杂的运动,以满足处理各种复杂形状的大的工件的需要。本文还对该机的两种使用实例做了介绍。     

聚焦离子束诱发金属有机化学气相淀积碳-铂薄膜

通过一系列实验,对聚焦离子束诱发MOCVD的成膜机理进行了研究,给出了淀积速率同离子束流等参数之间关系的理论模型.发现随着离子束流的增大,薄膜淀积速率增大,但并非完全线性增加,薄膜中的C/Pt比例也随之变化,薄膜电阻率则随之降低,最后趋向恒定.研究结果对实际工作中的工艺参数选取和薄膜电学性质的改进都有一定价值     

离子束辅助沉积薄膜工艺

阐述了离子源在离子束清洗和离子束辅助薄膜沉积（IAD）中的应用;根据热力学原理及离子碰撞过程分析,研究了离子束辅助沉积过程中的能量传递过程,建立了薄膜折射率与离子辅助沉积过程中各物理量之间的关系模型;探讨了各种工艺条件对离子束辅助沉积薄膜特性的影响,给出了薄膜材料无结晶条件下离子束辅助沉积薄膜工艺选择的相应准则。     

射频离子束辅助溅射镀膜设备的研制

介绍了一种用于氧化物薄膜制备的射频离子柬辅助溅射镀膜设备,阐述了设备原理、组成、特点以及试验结果。通过使用射频离子源和射频中和器,解决了采用热灯丝离子源的同类设备中灯丝易被氧化的关键问题,适合于氧化物薄膜制备。     

离子束溅射制备氧化物薄膜沉积速率调整方法

采用正交试验设计方法,系统研究了离子束溅射HfO2、Ta2O5 和SiO2 薄膜的沉积速率与工艺参数（基板温度、离子束压、离子束流和氧气流量）之间的关联性。采用正交表L9（34）设计了9 组实验,采用时间监控的离子束溅射沉积方法,分别制备HfO2、Ta2O5 和SiO2 薄膜,并对三种薄膜的27 个样品采用椭圆偏振法测量并计算物理厚度,继而获得沉积速率。实验结果表明:对Ta2O5 和SiO2 薄膜沉积速率影响的工艺参数相同,影响权重从大到小依次为离子束流、离子束压、氧气流量和基板温度;对 HfO2 薄膜沉积速率影响的工艺参数按权重从大到小依次为离子束流、离子束压、基板温度和氧气流量。研究结果为调整HfO2、Ta2O5 和SiO2 薄膜沉积速率提供了依据。     

碲镉汞红外探测器电极接触研究北大核心CSCD

金属/碲镉汞电极接触是红外焦平面探测器的重要组成部分,对器件的性能与稳定性影响较大。然而在碲镉汞金属化过程中,金属离子能量较高将有可能对碲镉汞表面造成损伤。本文采用了离子束沉积系统生长金属电极,探究了束流、束压以及热处理等条件对碲镉汞红外探测器接触性能的影响。研究表明,碲镉汞在生长电极后表面会受到一定程度的损伤;随着离子能量的升高,对材料表面损伤加剧。在I-V曲线中,电极沉积损伤较大的器件表现出软击穿现象;在热处理后,在一定程度上可以修复电极沉积时能量过大造成的损伤,提高了电极接触性能。     

聚焦离子束组合装置及应用

聚焦离子束技术是一种集形貌观测、定位制样、成分分析、薄膜淀积和无掩膜刻蚀各过程于一身的新型微纳加工技术。对电子离子双束纳米工作站,聚焦离子束、扫描电镜和Ar离子束构成的“三束”显微镜系统的原理和应用作了详细介绍,同时也对聚焦离子束-分子束外延组合装置、聚焦离子束与二次离子质谱仪(SIMS)的组合装置以及单轴聚焦离子/电子束(FIEB)装置作了简单介绍。     

3D Free‐Form Patterning of Silicon by Ion Implantation,Silicon Deposition,and Selective Silicon Etching

A method for additive layer‐by‐layer fabrication of arbitrarily shaped 3D silicon micro‐ and nanostructures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The method is demonstrated by fabricating 3D structures made of two and three silicon layers, including suspended beams that are 40 nm thick, 500 nm wide, and 4 μm long, and patterned lines that are 33 nm wide.     

Deposition of GaN thin film on ZnO/Si by DIBD method

The GaNis a semiconductor material witha widefor-bidden band(Eg=3.36eV).It has many unique advan-tages such as high electron drift velocity,small dielectricconstant,goodthermal conduction et al.It is a favorablematerial for making electric devices with hi…     

Morphological influence of the beam overlap in focused ion beam induced deposition using raster scan

Material addition using focused ion beam induced deposition (FIBID) is a well-established local deposition technology in microelectronic engineering. We investigated FIBID characteristics as a function of beam overlap using phenanthrene molecules. To initiate the localization of gas molecules, we irradiated the ion beams using a raster scan. We varied the beam overlap between ?900% and 50% by adjusting the pixel size from 300 nm to 15 nm. We discuss the changes in surface morphologies and deposition rates due to delocalization by the range effect of excited surface atoms, the divided structure by continuous effect from the raster scan, enhanced localization by discrete effect from replenished gas molecules, the competition between deposition and sputtering processes, and the change in processing time with scan speed (smaller overlap case).     

Cold Mass Cooling Design Studies for an LHC Inner Triplet Upgrade

A luminosity upgrade of the CERN Large Hadron Collider (LHC) is planned to coincide with the expected end of life of the existing inner triplet quadrupole magnets. The upgraded inner triplet will have much larger heat loads to be removed from the magnets by the cryogenics system. As part of the LHC Accelerator Research Program (LARP), a design study has been completed to investigate the required characteristics of the cold mass cooling system within the framework of a design temperature profile. These characteristics are the beam pipe annulus, collar radial cooling channels, yoke radial cooling channels, yoke longitudinal cooling channels, and heat exchanger connecting pipe. Using these parameters in conjunction with energy deposition calculations, longitudinal and radial temperature profiles for an entire inner triplet are calculated and presented.     

Precise nanofabrication with multiple ion beams for advanced circuit edit

Gallium focused ion beam (Ga-FIB) systems have been used historically in the semiconductor industry for circuit edit. Significant efforts have been invested to improve the performance of Ga-FIB. However, as the dimensions of integrated circuits continue to shrink, Ga-FIB induced processes are being driven to their physical limits. A helium ion beam offers high spatial resolution imaging as well as precise ion machining and sub-10 nm nanofabrication capabilities because the probe size can be brought to as small as 0.25 nm. However, it is limited by its relatively low material removal rate. Recently, the new Zeiss Orion-NanoFab microscope provides multiple ion beams (He, Ne and Ga as an option) into one platform and promotes the further studies of He and Ne induced deposition and etching processes to compare with a Ga ion beam. Because of the mass difference between He, Ne and Ga ions, the interactions of ions with sample surface and precursor molecules result in different sputtering rates, implantation and deposition yields. This presentation gives an overview of our current studies using this new platform to deposit or mill nanostructures for circuit edit.     

Study of Ion Beam Including Deposition Modes of Platinum Nanosized Structures Using by Focused Ion Beams

The results of experimental studies of the Pt structure with the thickness ranging from (0.48 ± 0.1) to (24.38 ± 0.1) nm ion beam including deposition by focused ion beam are presented. The rate of ion beam including deposition of Pt, which depending on the modes varies from (0.28 ± 0.02) to (6.7 ± 0.5) nm/s, is determined experimentally. The deviation of Pt lateral structure sizes from those preset by the template decreases from (29.3 ± 0.07)% to (2.4 ± 0.2)% depending on the deposition duration. By the thicknesses of Pt nanosized structures larger than 3 nm, their specific resistance amounts to (23.4 ± 1.8) Ohm cm and weakly depends on the thickness. The results can be used for developing the technological processes used to form the structures of microelectronics sensorics, nanoelectronics, and nano- and microsystem engineering.     

基于DSP新型图形发生器模数转换器的设计

介绍了一种电子束曝光机图形发生器模数转换器的设计方案，该设计方案以ADI公司的模数转换芯片AD9223为核心，根据电子束曝光机背散射信号的特点，设计了合理的前端放大器和驱动电路及基准源。这样，提供了与DSP的无缝接口并提高了转换速度。该模数转换器可用于电子束和离子束曝光机中的图形发生器采集标记数据和图像数据信息，同时也可用于原子力显微镜采集图像数据信息。     

Fabrication of Bio‐Inspired 2D MOFs/PAA Hybrid Membrane for Asymmetric Ion Transport

Biological ion channels are known as membrane proteins which can turn on and off under environmental stimulus to regulate ion transport and energy conversion. Rapid progress made in biological ion channels provides inspiration for developing artificial nanochannels to mimic the structures and functions of ion transport systems and energy conversion in biological ion channels. Due to the advantages of abundant pore channels, metal–organic frameworks (MOFs) have become competitive materials to control the nanofluidic transport. Herein, a facile in situ synthesis method is developed to prepare hybrid nanochannels constructed by 2D MOFs and porous anodic aluminum (PAA). The introduction of asymmetries in the chemical composition and surface charge properties gives the hybrid outstanding ion current rectification properties and excellent ion selectivity. A power density of 1.6 W m^?2 is achieved by integrating it into a salinity‐gradient‐driven device. With advantages of facile fabrication method and high ion selectivity, the prepared 2D MOFs/PAA hybrid membrane offers a promising candidate for power conversion and water desalination.     

（英）离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性

采用离子束溅射法通过在CH4和Ar 的混合气体中溅射Ge靶材制备碳化锗(Ge1-xCx)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8 GPa.由于薄膜中的Ge-C键代替了C-C 键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.     

Structural and optical properties of ZnO films prepared by ion beam sputtering

Based on the ion beam sputtering deposition technology,ZnO thin films are deposited on the glass substrate.The four-factor and three-level L 9(34)orthogonal experiment is used to obtain the best technological parameters of the deposited ZnO thin films,which are the discharge voltage of 3.5 kV,the oxygen current capacity of 8 sccm,the coil current of 8 A and the distance between target and substrate of 140 mm.The purity of the deposited ZnO thin film is 85.77%,and it has good crystallization in orientation.The experimental results show that research and development of the ion beam sputtering source are advanced,and the ion beam sputtering deposition technology can be used to deposit the orientation preferred thin films with good performance.     

制备工艺条件对薄膜微结构的影响

用不同的方法在石英玻璃,YAG晶体,K9玻璃和LiNbO3晶体等几种衬底上制备了ZrO2,HfO2和TiO2薄膜。HfO2薄膜利用电子束蒸发(EB)、离子束辅助(IAD)和双束离子束溅射(DIBS)三种方法沉积。对其中的一些样品进行了不同温度下的退火处理,对所有的样品进行X射线衍射(XRD)测试,以获得不同条件下得到的薄膜的晶相及晶粒尺寸等的微结构参数。实验结果表明,薄膜的晶相结构以及晶粒尺寸强烈地依赖于沉积过程的各种技术参数,如衬底的种类、沉积温度、沉积方法和退火温度。利用薄膜表面扩散以及薄膜成核长大热力学原理解释了不同技术条件下的晶相结构和晶粒尺寸不同的原因。     

锑化铟红外探测器的三维电极成型技术

锑化铟的电极因三维特性易产生侧壁断裂问题,互联的铟柱会侵入电极内部,影响锑化铟芯片的可靠性。使用离子束溅射沉积、热蒸发、磁控溅射等方法制备三维电极体系,并通过聚焦离子束(Focused Ion Beam, FIB)方法以及扫描电子显微镜(Scanning Electron Microscope, SEM)对其进行表征。结果表明,通过热蒸发、磁控溅射制备的电极三维覆盖情况较好,但存在电极脱落和剥离困难的问题;离子束溅射沉积方法可通过改变沉积角度、移除修正挡板来实现锑化铟三维电极的高质量制备。     

A comparison of focused ion beam and electron beam induced deposition processes

Focused ion and electron beams are used for local deposition of conducting or insulating films. Major applications are integrated circuit design edit, prototype modification, repair of masks, and machining of microsystems. In this paper, the dependence of the deposition rates versus the beam parameters for both, ion beam and electron beam induced deposition were investigated and compared with each other. At the same time, a more precise consideration of the influence of secondary electrons on the deposition process was accomplished.