聚酰亚胺添加剂对液晶预倾角的影响

液晶取向剂是制造液晶显示器的关键材料之一.目前对聚酰亚胺结构对液晶预倾角的影响研究较多,而添加剂对预倾角影响的研究还较少.文章用均苯四甲酸二酐(PMDA),4[(4-氨基苯基)-二(4-甲氧基苯基)甲基]苯胺,1,2,3,4-环丁烷四羧酸二酐(CBDA),4-己烷氧基联苯酚-3′,5′-二胺基苯甲酸酯和不同含量的添加剂制备了聚酰亚胺液晶取向剂.通过偏光显微镜观察,液晶分子在4种PI膜上都获得了均匀取向.研究发现,含添加剂的PI膜具有良好的耐溶剂性能,液晶分子的预倾角随添加剂含量的增加先增大后减小.     

侧链密度对聚酰亚胺取向膜性能的影响

成功地合成了二胺单体十二烷氧基苯-4′,4″-二氨基三苯胺(DPDTA),并用此单体与3,3′-二甲基-4,4′-二氨基二苯甲烷(DMMDA)和二苯醚四羧酸二酐(ODPA)共缩聚,采用低温缩聚-热酰亚胺化、通过调节共聚物组成制备了2种聚酰亚胺(PI)。利用FT-IR、NMR、UV-Vis与DSC等手段对合成二胺单体及PI进行了结构表征和性能测试。研究了其取向性能、透光性能和耐热性能。结果表明,在摩擦前,含10%DPDTA的PI不能诱导液晶分子取向,含25%DPDTA的PI能诱导液晶分子垂直取向,预倾角可达89.6°。而摩擦后,两种PI都能使液晶分子平行取向,预倾角分别为1.8°和2.4°。两种PI膜在500～800nm区域透光率都在80%以上,玻璃化温度都在230℃以上。     

一种用于液晶分子取向排列的紫外光聚合物PV4研究

研究了紫外光聚合物材料ＰＶ４的化学性质;采用偏光显微照相技术,研究厂这种材料膜对液晶ＬＣ－６７１０Ａ的取向能力;用原子力显微镜（ＡＦＭ）,研究了光聚合前后聚合物取向膜微观形貌的变化;测最了这种材料引起的液晶预倾角、单面光控取向层扭曲向列液晶显示器件（ＴＮ－ＬＣＤ）的电光特性和时间响应特性;分析了液晶分子取向排列的机理。     

光敏小分子单体链聚合诱导液晶分子排列的研究

两端带有碳碳双键,尺寸与液晶分子相近的刚性小分子单体在线偏振紫外光照射下聚合,形成的聚合物膜能够诱导液晶分子均匀取向。对不同光照时间的紫外吸收光谱谱图比较发现,该取向材料具有较好的光敏性。利用偏振红外光谱测定了取向膜表面的二向色性,并且测得膜表面有序度为0．088。以晶体旋转法测定该取向膜制成的液晶器件,测得预倾角的大小为0．8。     

液晶的表面排列机理

本文系统地研究了向列液晶分子在各种表面上的排列,特别是研究了在各种聚酰亚胺取向膜表面上的排列状态,并得到6°以上的稳定排列的高预倾角.详细地讨论了沟纹理论和分子相互作用理论,并通过锚定能加以综合分析,提出了两种理论的适用范围.对于有机聚合物表面,我们分析了取向膜的光学各向导性,并分析了占优势的分子相互作用类型.最后,给出了液晶分子的倾斜排列模型,这对实践上对预倾角的控制是相当重要的.     

聚酰亚胺制备条件对液晶预倾角的影响

液晶取向层性能优劣直接影响液晶分子在基板表面的排列效果,进而影响液晶显示器的光电性能,因此是制造液晶显示器的关键材料之一。文献大多研究聚酰亚胺结构对液晶预倾角的影响,而加料顺序对预倾角影响的研究,迄今还未引起注意。文章用均苯四酸二酐(PMDA)、4,4′-二胺基二苯甲烷(MDA)和具有较大支链的4-(4-(三氟甲氧基)苯甲酰基)环己基-3,5-二胺基苯甲酸酯(TBCA)等单体制备聚酰亚胺(PI),首次研究了单体加料顺序对液晶预倾角的影响,同时也研究了二胺配比对液晶预倾角的影响问题,并探讨了预倾角的热稳定性等问题。实验发现:先将PMDA加入TBCA的NMP溶液中,待PMDA完全溶解后,再加入MDA继续反应2 h,可得到预倾角为4.1°的聚酰亚胺液晶取向剂,且液晶盒在120℃下保持4 h后预倾角没有明显变化,预倾角稳定性良好。     

聚酰亚胺液晶垂直取向膜的制备与性质

虽然传统的平行取向技术已广泛应用于液晶显示器的生产,但其存在窄视角、低对比度和慢响应时间等问题,因此液晶分子的垂直取向技术在国外已经被广泛研究。在实验中,一种含有液晶结构侧链的聚酰亚胺通过均苯四羧酸二酐(PMDA),4,4′-二胺基二苯甲烷(MDA)和4-己氧基联苯酚-3′,5′-二胺基苯甲酸酯(C6BBDA,实验室自制)共聚被制备,并且被用作液晶取向膜,研究其取向性能。试验发现,该种聚酰亚胺作为取向膜可以诱导液晶分子垂直取向,即使在摩擦之后依然可以获得大于89°的预倾角;使用正交偏光显微镜观察所制得液晶盒中的液晶取向效果,发现垂直取向均匀良好;为了测试该垂直取向的热稳定性,将制备的液晶盒在120℃下烘烤12h后,偏光显微镜下观察发现垂直取向仍然良好均匀,表明该取向膜具有良好的热稳定性。     

预倾角对超扭曲向列相液晶显示的影响

超扭曲向列相液晶显示(STN-LCD)在实际应用中经常会出现一种由周期性条纹织构引起的晶畴,这种晶畴引起光散射使显示性能下降。采用4种不同的PI作为超扭曲向列相(STN)液晶盒的取向膜,在相同的条件下用摩擦法取向并制成盒后用偏光显微镜观察,发现不同PI取向的盒其均匀性有显著差异,有的盒中有晶畴出现,有的盒则显示出了良好的均匀性。晶体旋转法测量结果表明,不同PI引起不同的预倾角,取向均匀的盒所用PI产生的预倾角比其他PI产生的预倾角要大3°左右。分析认为,较大的预倾角抑制了晶畴的产生,在合适的d/p值下,预倾角只要达到5°以上时即可以有效地抑制条纹的产生,满足生产要求,为解决STN-LCD存在的晶畴问题提供了依据和方法。     

聚酰亚胺单体配比对液晶预倾角的影响

液晶取向剂是制造液晶显示器的关键材料之一,目前文献大多研究聚酰亚胺结构对液晶预倾角的影响,而单体配比对预倾角影响的研究还较少。文章用均苯四羧酸二酐(PM-DA)、4,4′-二氨基二苯甲烷(MDA)和4-(4-(三氟甲氧基)苯甲酰基)环己基-3,5-二胺基苯甲酸酯(TBCA)制备了一系列三元共聚型聚酰亚胺液晶取向剂,用原子力显微镜对取向剂诱导液晶分子取向能力进行了考察,首次研究了单体配比对液晶预倾角的影响。研究发现,所有取向剂对液晶分子均有较好的取向性能;液晶分子的预倾角随TBCA含量增加而增大;在保持两种二胺配比不变的情况下,随着二酐含量增加而先增大后减小。并最终在单体配比为n(PMDA)∶n(MDA)∶n(TBCA)=104∶60∶40的条件下,合成了一种预倾角高达7.7°、成本较低的聚酰亚胺液晶取向剂。     

摩擦强度对取向膜表面液晶取向度的影响

利用红外二向色性吸收实验,定量分析了不同摩擦强度的取向处理后取向膜表面的液晶分子取向度。实验结果表明,取向膜表面的液晶分子取向度随摩擦强度的增加而增加,最后达到饱和。取向膜表面的液晶分子取向度饱和值仍低于体内部,大约为体内部的1／2。液晶界面层的厚度不随摩擦强度变化,均为7nm左右,此值具有分子相干长度的物理意义。     

Efficient upconversion by a frequency factor between two and threeusing an optical parametric oscillator

We present the theory of a scheme for frequency up-conversion from pump frequency ω_p to a desired frequency ω_d between 2ω_p and 3ω_p. The proposed device consists of three nonlinear crystals in series inside a cavity resonating light at a signal frequency ωs. Sum-frequency generation (SFG) in the first crystal produces the desired radiation, ω_s+ω_p=ω_d. Second-harmonic generation (SHG) in the second crystal doubles the frequency of the residual pump, 2ω_p=ω_h, while the signal passes through unaffected. Optical parametric oscillation (OPO) in the third crystal generates the signal and idler frequencies, ω_h=ω_s+ω. A plane-wave analysis predicts a quantum efficiency close to 30% over an extended range of pump intensity. Iteration of the plane-wave solutions over many passes yields dynamics very similar to that recently calculated for the SFG-OPO device. As in that device, a small detuning of the SFG interaction enlarges the dynamic range yielding stable operation. Highest efficiency occurs when ω_i is at the low-frequency end of the OPO crystal transmission window. As an example, we consider a device using a noncritically phase-matched KTP SFG crystal, a quartz crystal polarization rotator, an angle-tuned KTP SHG crystal, and a noncritically phase-matched LiNbO₃ OPO crystal. This device is designed to convert λ_p=1.064 μm to λ_d=0.455 μm. We calculate a power conversion efficiency as great as 73%     

激光改性硅酸盐玻璃表面局域制备金属铜层

为了实现普通硅酸盐玻璃表面的金属化,利用波长为355nm的脉冲紫外激光刻蚀粗化活化,并结合化学镀,在其表面局域制备出了导电金属铜层。研究了激光加工参量对玻璃表面微观形貌、粗糙度、刻蚀深度的影响规律,并在玻璃表面成功引入了钯元素。结果表明,当第1次紫外激光扫描速率为200mm/s、脉冲频率为100kHz、能量密度为27J/cm2~37J/cm2和填充间距在10μm左右时,玻璃表面可以获得的刻蚀深度在25μm~35μm之间,刻蚀区域的粗糙度R_a在6μm~7μm之间,此时玻璃不会开裂;而第2次激光的能量密度在9J/cm2~11J/cm2之间时（其余参量不变）,钯元素的引入实现了化学镀铜,此时铜层和玻璃之间的平均结合强度可以达到10MPa以上,铜层的体积电阻率可以达到10-6Ω·cm数量级。这是一种具有局域选择性、无需掩模、低成本、高结合强度和良好导电性的玻璃表面金属化工艺。     

负性液晶垂面排列（VA）盒中壁的研究

文章从理论上概述了外场作用下向列相液晶盒中出现的Bloch壁,使用负性液晶对两种垂面排列（VA）盒进行实验研究。两种液晶盒均使用垂面聚酰亚胺（PI）作为取向层,一种盒涂敷PI后使用了后工艺过程,另一种盒涂敷PI而没有后工艺过程。第一种VA盒在强场作用下出现壁,它事实上验证了涂敷PI后工艺过程的有效性。在外场作用下,第二种VA盒出现不同的不稳定现象。     

Focused-ion-beam direct structuring of fused silica for fabrication of nano-imprinting templates

A dual beam scanning electron microscopy (SEM)/focused-ion-beam (FIB) system was used to pattern fused silica coated with a thin Cr layer. Features were characterised by atomic force microscopy (AFM) and SEM. The milled depth, surface roughness and the evolution of feature profiles as a function of ion fluence were investigated. It was found that the milled depth in fused silica substrates was linearly dependent on the ion fluence within the studied range. Features topography measurement revealed that after removing completely the Cr layer, an increase of the ion fluence resulted in a slight rise of surface roughness, however, the maximum root mean square (RMS) values were still less than 2.5 nm. More importantly, compared with the roughness of an unprocessed area on the substrate, an improvement of the surface finish of about 300% was obtained. The results demonstrated that FIB technology could be an alternative solution for producing nano-imprinting templates.     

CVD TiN layers as diffusion barrier films on porous SiO2 aerogel

In this work the compatibility of MOCVD TiN barrier films on porous SiO₂ aerogel as low-k dielectric was investigated. The continuity, roughness, and sheet resistance, R_s, of the barrier as well as the electrical properties of the aerogel were investigated. A continuous TiN barrier on uncapped and PECVD SiN capped aerogel exists at 30 and ≤20 nm, respectively. The high surface roughness of the TiN is caused by the aerogel layer. TiN penetration into uncapped aerogel was detected in the interface region, whereas capped low-k material shows no interaction with the barrier film.     

High-nonlinearity fiber optical parametric amplifier with periodicdispersion compensation

Theory shows that the maximum gain and bandwidth of one-pump fiber optical parametric amplifiers made from high-nonlinearity fiber, operated with a pump wavelength λ_p far from the fiber zero-dispersion wavelength λ₀ can greatly be improved by periodic dispersion compensation. We have performed experiments and obtained good agreement with theory: for λ_p=1542 and λ₀=1591 nm, we have increased the bandwidth from 7 to 28 nm, and the maximum gain from 15 to 20 dB, by splicing three pieces of standard fiber at regular intervals in a 40-m long nonlinear fiber     

MOCVD epitaxy of InAlN on different templates

InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of～16%,while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template,with 282.3"（002） full width at half maximum （FWHM） of rocking curve,313.5"（102） FWHM,surface roughness of 0.39 nm and V-pit density of 2.8×10⁸ cm^-2,were better than that of the InAlN epilayer grown on the GaN template,309.3",339.1",0.593 nm and 4.2×10⁸ cm^-2.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore,the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers.     

H_2O_2对溶液法制备a-IGZO薄膜光学特性的影响

基于溶液旋涂法和高压退火工艺制备了a-IGZO薄膜。采用椭圆偏振光谱分析仪以及原子力显微镜研究和分析了H_2O_2对薄膜的表面结构和光学特性的影响。实验结果表明,a-IGZO前驱液中不含H_2O_2的薄膜,退火温度从220℃升高到300℃,薄膜的光学带隙从3.03增加到3.29,而膜表面粗糙层由20.69nm降至4.68nm。在同样的高压退火条件处理下,与前驱液中没加入H_2O_2的薄膜相比,折射率显著增加并明显的降低了薄膜表面粗糙度。退火温度在300℃时,薄膜的光学带隙由3.29eV增大到3.34eV,表面粗糙层由4.68nm减少到2.89nm。因此,H_2O_2可以在相对低温条件下有效降低薄膜内部的有机物残留及微缺陷,形成更加致密的a-IGZO薄膜。证明了利用H_2O_2能够有效降低溶液法制备aIGZO薄膜所需的退火温度。     

Design optimization for efficient erbium-doped fiber amplifiers

The gain and pumping efficiency of aluminosilicate erbium-doped fiber amplifiers (EDFAs) are analyzed as a function of guiding parameters and Er-doping profile for two pump wavelengths of λ _p=980 nm and λ_p=1.47 μm. Three designs of fiber-amplifier waveguides are considered: one with the same mode size as standard 1.5-μm communication fibers (type 1); one with the same mode size as standard 1.5-μm dispersion-shifted fibers (type 2); and one with mode size smaller than those of communication fibers (type 3). For the 1.47-μm pump, fundamental LP₀₁ mode excitation is assumed, while for the λ_p=980-nm pump, concurrent excitation of LP₁₁ modes is considered. It is shown that excitation of higher-order pump modes at 980 nm does not significantly affect the amplifier gain performance. The effect of concentrating the Er³⁺ doping near the center of the fiber core is shown to increase the amplifier gain coefficients by a factor of 1.5 to 2     

用偏光显微镜解析界面层分子有序度

阐述了用偏光显微镜测量液晶盒中分子有序度分布的方法。采用楔形液盒获得了仅有十几个ｎｍ的界面层信息,并提出具有创意性的偏光解析方法。通过这一工作得出以下结论：在高分子膜表面通过摩擦过程获得的液晶取向排列,其界面子有序度为体内部序度的６０％以下,有序度远低于体内部;由于固体界面对液晶排列的影响,产生一个有序度连续变化的界面层,其厚度大约于体内部;由于固体界面对液晶排列的影响,产生一个有序度连续变化的界