粗检漏试验标准问题的研究及建议

有些外形较小或内腔腔体体积较小并且检漏合格的电子产品,进行水汽含量测定时有时会出现样品水汽含量超标现象。为证明现行国家标准中粗检漏试验方法(高温氟油加压检漏法)会对产品出现误判的问题,通过一系列试验和研究,证明了外形较小或内腔腔体体积较小存在漏孔的电子产品,严格按照现行的粗检漏试验方法中规定的样品在空气中干燥有效时间(2±1)min内进行试验,试验得到了多种结果,进而对产品形成误判,为此对标准中的该试验方法提出了一些新的建议。     

射频磁控溅射沉积AZO透明导电膜研究

采用射频磁控溅射技术在玻璃衬底上沉积了AZO透明导电薄膜,应用灰关联-田口实验法设计了L9(34)混合直交表,研究了制程工艺对薄膜沉积速率、电阻率、光穿透率、结晶性的影响。结果表明沉积薄膜的最佳制程参数为射频功率120 W、溅射压强2 Pa、靶材-基板距离8.5 cm、薄膜沉积时间90 min;实验显示最佳制程参数下所得透明导电薄膜沉积速率为8.04 nm/min,电阻率为2.6×10–3.cm,可见光穿透率维持在84%左右。     

PECVD的原理与故障分析

介绍了PECVD工艺的种类、工艺原理以及设备的基本结构;根据多年对设备的维护经验,分析了PECVD设备的常见原因,提出了处理措施;最后,分析总结了影响PECVD工艺质量的主要因素。     

流式细胞仪系统中液体变焦透镜的设计与制作

以聚二甲基硅烷(PDMS)为基础,设计制作了一种 封闭式液体变焦透镜。通过对PDMS薄膜形变情况 的仿真分析,利用Matlab数学建模与ANSYS结构仿真,得到薄膜形变结果,确定了合理的透 镜腔体结构。 在制备工艺上,首先利用SU-8模型制作了PDMS透镜腔,再使用混合PDMS制作出腔体的盖片 ;然后将两部 分进行表面处理后键合,注射填充液、完成二次封装;最后对透镜的表面形变和焦距变化进 行了测试,根 据测试结果绘制了焦距-磁通量曲线。测试中,在磁通量从200mT到 600mT的过程中,焦距 由22.0mm变为20.2mm。 结果表明,以本文方法制作变焦透镜,可以简化工艺步骤,降低制造成本,减小整体体积, 焦距可控,有着更好的密封性,受外界环境干扰小。     

ICP腔体压力对直流偏压的影响

基于GaAs器件干法刻蚀工艺,介绍感应耦合等离子(ICP)的刻蚀原理,以Cl2和BCl3为刻蚀气体,研究分析了在GaAs表面刻蚀工艺中不同的腔体压力下设备直流偏压的变化情况.发现在各种不同的功率下都存在一个特定的腔体压力,当低于该腔体压力时直流偏压会随腔体压力的增大而增加,当高于该腔体压力后直流偏压会随着腔体压力的增加而缓慢减小.讨论了产生这种现象的原因,揭示了其中的物理机理,以该方法作为参考,通过一组对比实验在工艺中得到验证,给出了GaAs刻蚀的工艺条件,为刻蚀工艺条件的优化提供了一个参考.     

纳米级工艺制程仿真SenTaurus Process的应用

基于Synopsys Inc.最新推出的新一代nm级IC制程工艺设计工具--SenTaurus Process,实现了CMOS架构的nm级NMOS制程的工艺级可制造性设计。仿真结果体现了SenTaurus Process的强大功能和使用SenTaurus Process进行工艺级可制造性设计的必要性。     

ALD反应室流场分析及优化研究

为解决用于钙钛矿SnO₂电子传输层镀膜工艺的原子层沉积(ALD)设备存在的镀膜均匀性问题,基于计算流体力学(CFD)仿真软件Fluent,从流场的角度对设备反应腔体进行了分析。根据流场分析的结果,进行了反应室结构优化设计。并通过工艺试验,验证了流场的改善对镀膜均匀性有明显帮助作用;对ALD设备流场分析及相关设备的设计优化具有一定参考意义。     

检漏技术在半导体器件制造中的应用

检漏技术除了应用于真空技术之外.它正在向国民经济各个领域推广应用,大至几百立方米小至0.1立方毫米的各种腔体.当要求密封比较严格时,都需要应用检漏技术,随着科学技术的发展,各种腔体气密性要求越来越高.小腔体电子元件如半导体器件的检漏技术近几年来发展很快.国外在七十年代就有专门检漏小腔体的仪器,国内近两年也有了此类产     

BOC Edwards @ Semicon China 2007

ATLAS为所有使用电离NF，为腔体清洗方式的CVD工艺（如，大多数的PECVD，HDPCVD，WCVD，等）提供最省钱的尾气处理管理。     

PECVD颜色均匀性的研究

根据多晶硅PECVD的制程原理,分别验证温度、流量、功率等工艺参数对镀膜质量的影响,寻求最佳参数,从而达到优化工艺,改善镀膜颜色质量,保证颜色均匀性的目的。     

Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si:H layers

In this work we report the effects of impurity concentration and crystallization temperature on the crystalline orientation and final layer resistivity of poly-crystalline films obtained from a-Si:H layers deposited by PECVD at 225 °C followed by a hydrogen plasma process in the same PECVD equipment in which they are deposited. Films were characterized electrically, by X-ray diffractometry and by transmission electron microscopy. Crystallized films were used to fabricate poly-Si TFTs.     

高效网络设备安全入网验收工作体系的构建

为了防止设备“带病入网”,必须加强设备入网安全接入管理,落实安全配置基线要求和修补漏洞,从而在设备入网前减少和消除安全隐患,有效预防和规避安全事故的发生,安全入网验收工作必不可少.通过大量的工作实践,构建起了一套较为完善的网络设备安全入网验收工作体系,并开发了自评估工具,将漏洞扫描、配置核查、关键信息监控、日常巡检等功能整合在一起,形成了一个高度综合的风险评估工具.     

大马士革铜阻挡氮化硅薄膜沉积工艺优化研究

在铜大马士革（Damascene）工艺中,为避免由于铜向FSG中扩散所致电迁移的问题,需要在铜表面沉积一层氮化硅作为隔离铜和随后的介电材料的直接接触,通常人们使用HDP—CVD来沉积该氮化硅层。但针对HDP—CVD沉积速率快和工艺设备成本高等问题,文中研究了一种优化了的PECVD氮化硅沉积工艺来取代HDP—CVD氮化硅工艺。优化主要包含硬件改进和工艺参数调整。硬件改进主要通过引入锥形阴极盘面代替传统的直通形阴极盘面,以实现气体分子的更有效电离。在工艺参数上从RF功率、SiH4流量等方面也有所调整。优化后形成的氮化硅薄膜与HDP—CVD氮化硅薄膜性能非常接近,完全符合大马士革工艺的要求。同时氮化硅薄膜的沉积速率也有明显提高,工艺成本随之降低。     

PECVD在TSV领域的应用

PECVD设备及工艺技术已在半导体前道互连工艺及TSV领域展现了其广阔的应用前景,介绍了拓荆PECVD在TSV领域的应用,展现其良好的工艺表现。     

Reduced PFC emissions and gas consumption using a c-C/sub 4/F/sub 8/-based PECVD chamber clean chemistry

Perfluorocompounds (PFCs) used in semiconductor manufacturing are potential contributors to greenhouse gas-driven climate change. PFCs emitted from plasma enhanced chemical vapor deposition (PECVD) chamber cleans can be a significant portion of the total PFC emissions for a typical semiconductor fabrication facility. Previous work adopting octafluorocyclobutane (c-C/sub 4/F/sub 8/) clean chemistries to reduce gas consumption and PFC emissions have been reported on applied materials and novellus PECVD tools. In this study, c-C/sub 4/F/sub 8/ was evaluated as an alternative chamber clean gas on Mattson ASPEN II PECVD tools. A statistical design of experiment (DOE) methodology and tool emission analysis by Fourier transform infrared spectrometry were used to develop a low gas consumption and low PFC emission process. This c-C/sub 4/F/sub 8/ process reduced the clean gas consumption by 65% and PFC emission by 78%, compared to our current C/sub 2/F/sub 6/ clean with no impact on deposited film properties or process repeatability.     

Virtual plasma equipment model: a tool for investigating feedbackcontrol in plasma processing equipment

As microelectronics device feature sizes continue to shrink and wafers continue to increase in size, it is necessary to have tighter tolerances during the fabrication process to maintain high yields. Feedback control has, therefore, become an important issue in plasma processing equipment design; comprehensive plasma equipment models linked to control algorithms would greatly aid in the investigation and optimal selection of control strategies. This paper reports on a numerical plasma simulation tool, the virtual plasma equipment model (VPEM), which addresses this need to test feedback control strategies and algorithms on plasma processing equipment. The VPEM is an extension of the hybrid plasma equipment model which has been augmented by sensors and actuators, linked together through a programmable controller. The sensors emulate experimental measurements of species densities, fluxes, and energies, while the actuators change process parameters such as pressure, inductive power, capacitive power, electrode voltages, and mole fraction of gases. Controllers were designed using a response surface based methodology. Results are presented from studies in which these controllers were used to compensate for a leak of N₂ into an Ar discharge, to stably control drifts in process parameters such as pressure and power in Ar and Ar/Cl₂, and to nullify the effects of long term changes in wall conditions in Cl₂ containing plasmas. A new strategy for improving the ion energy flux uniformity in capacitively coupled discharges using feedback control techniques is also explored     

The application of polyimide/silicon nitride dual passivation to AlxGa1−xN/GaN high electron mobility transistors

PECVD silicon nitride passivation is quite frequently done at the end of AlGaN/GaN HEMT fabrication before substrate back-side lapping. However, the PECVD silicon nitride process is likely to produce pinholes in the passivation film. A very thick PECVD silicon nitride film may produce mechanical stress on the underlying device. Polyimide passivation has also been known to be effective for AlGaN/GaN HEMT and it can also serve as a stress buffer. However, polyimide can take up water while PECVD silicon nitride is a good diffusion barrier for water, etc. Thus it is expected that a dual PECVD silicon nitride/polyimide passivation will be a better choice than just a single layer of PECVD silicon nitride or polyimide. In this paper, we will demonstrate the application of a dual PECVD silicon nitride/polyimide passivation to AlGaN/GaN HEMT process.     

TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究

本文对TFT在栅极绝缘层和非晶硅膜层沉积过程中,透明电极ITO成分对膜层的污染和TFT电学性质的影响进行分析研究。通过二次离子质谱分析和电学测试设备对样品进行分析。ITO成分会对PECVD设备、栅极绝缘层和非晶硅膜层产生污染,并会影响TFT的电学特性。建议采用独立的PECVD设备完成ITO膜层上面的栅极绝缘层和非晶硅膜层的沉积,并且对设备进行周期性清洗,可降低ITO成分的污染和提高产品的电学性能。     

单管卧式热壁型PECVD设备

介绍了一种用于氮化硅薄膜生长的等离子增强化学气相淀积设备,着重阐述了该设备的结构组成、工艺原理及控制。     

A monitor wafer based controller for semiconductor processes

A monitor wafer based controller is described. The controller can be applied to equipment with or without in-situ sensors. The controller incorporates a novel multivariable adaptation methodology for the feedback controller that employs a layered process/equipment model. The layered model consists of an intrinsic component that corresponds to the initial settings to outputs model and an extrinsic component that transforms the inputs and the outputs of the intrinsic model. The adaptation strategy tunes the extrinsic model only and thus the adaptation strategy is independent of the intrinsic model form. The controller determines whether the process and equipment have changed state by using model based SQC to compare product parameter measurements with the composite model predictions. If a change in state is deduced, a model tuner is activated which adapts the extrinsic model to reflect the new state. To adapt the model, a local experiment design technique is applied that perturbs the equipment settings. Finally, a stepwise optimization technique that permits the specification and utilization of user preference toward changing some process inputs over others is used for determining the new process recipe. We report the controller's application to the plasma enhanced chemical vapor deposition of silicon nitride (PECVD Nitride) process run on Applied Materials Precision Reactor (AMT 5000). The controller has been tested in two ways. First, single and multiple faults were introduced in the process equipment. Second, the controller performance was observed during an extended period of routine use. These evaluations indicate that the controller is able to detect process state change and to adjust the process recipe to keep the process on target