氧等离子体处理ZnO纳米纤维材料的制备及其对丙酮气敏性能的研究

采用静电纺丝法制备了ZnO纳米纤维材料并使用氧等离子体对其进行表面处理.通过X射线衍射(XRD),扫描电子显微镜(SEM),BET比表面积测试以及X射线光电子能谱分析(XPS)等手段对样品的结构与形貌进行了表征分析.将氧等离子体处理前后的ZnO纳米纤维分别制成气体传感器,对浓度为1×10-6~100×10-6(体积分数)丙酮气体的敏感特性进行了测试分析.测试结果表明,氧等离子体处理后的ZnO纳米纤维响应值较未处理的ZnO纳米纤维有大幅度的提升,最佳工作温度也有所降低,且对甲醛、苯、甲苯、二甲苯等几种干扰气体表现出更好的选择性.从晶粒间势垒和耗尽层厚度等角度初步分析了氧等离子体处理改善ZnO气敏特性的机理.     

常压氩气等离子体对碳纤维表面亲水改性研究

该文采用常压氩气等离子体对水溶液中的碳纤维进行表面改性处理,以去除碳纤维表面浆 料,并实现碳纤维的亲水功能化改性。通过扫描电子显微镜、红外光谱、X 射线光电子能谱、水静态 接触角测试及力学性能测试对改性后的碳纤维进行研究分析。结果表明,等离子体改性处理既可以去 除纤维表面的浆料和杂质污染物,保持纤维原有的凹凸沟槽形貌特征,又可以引入大量含氧极性基 团。进一步分析表明,等离子体改性处理 120 s 可以使纤维获得最优的浸润性能,水静态接触角可以 降至 45.1°。力学性能测试结果表明,这种等离子体改性方法对纤维的力学性能几乎没有影响,处理 300 s 后仍可保持碳纤维的抗拉强度在 3.23 GPa。     

Indium tin oxide anode modification for enhanced polymer light‐emitting devices

Abstract— Effort has been focused on exploring indium tin oxide (ITO) anode modification for enhanced performance of polymer light‐emitting diodes (PLEDs). It was found that oxidative treatment, e.g., a commonly used oxygen plasma, modifies ITO surface effectively to produce a low‐conductivity oxygen‐rich region. As a consequence, oxygen plasma‐treated ITO behaves somewhat similarly to specimens where there is an ultra‐thin insulating layer on its surface. It shows that the presence of such an ultra‐thin insulating interlayer between the ITO and the polymer layer favors the efficient operation of the PLEDs. The result of this effort provides an insight to better understand optimal anode contact for enhanced PLED performance.     

The role of LiF buffer layer in tris‐(8‐hydroxyquinoline) aluminum‐based organic light‐emitting devices with Mg:Ag cathode

Abstract— The device characteristics of organic light‐emitting devices based on tris‐(8‐hydroxyqunoline) aluminum with a thin layer of LiF inserted at the ITO and organic interface or organic and Mg:Ag cathode interface were investigated. A thin layer of LiF can enhance the electron injection when it was inserted only between the organic electron‐transporting layer and the Mg:Ag alloy cathode, but can block hole injection when inserted between the ITO anode and the organic hole‐transport layer. By inserting both a 1.0‐nm LiF layer at side of the ITO anode and a 0.5‐nm LiF layer under the Mg:Ag cathode, the device, at a current injection of 10 mA/cm², exhibited the highest current efficiency of 8.2 cd/A and power efficiency of 1.93 lm/W for all the types of devices investigated in this study. Both the current efficiency and power efficiency of the device were improved by 1.2 times at a current injection of 10 mA/cm², compared to the standard device without any LiF buffer layer. This is due to the increased electron injection and decreased hole injection that off‐sets the imbalance of electron and hole injection and brings it towards the balanced injection of electrons and holes, thus reducing the non‐productive hole current.     

Effects of ITO film annealing temperature on hybrid solar cell performance

The effects of indium tin oxide (ITO) film annealing temperature on the performance of organic solar cells are investigated. The roughness of the ITO film surface morphology increased with increasing annealing temperature. The optical penetration and rate of exciton generation both increased with increasing ITO film annealing temperature, enhancing the short-circuit current density. The maximum efficiency (2.62 %) was obtained with an annealing temperature of about 500 °C. The incident-photon-to-current efficiency value for a hybrid photovoltaic device with an ITO film annealed temperature at 500 °C was 45 % at 475 nm.     

Highly efficient styrylamine-doped blue and white organic electroluminescent devices

We have developed highly efficient blue and white organic electroluminescent devices based on a blue fluorescent styrylamine dopant EBDP. The blue and white organic light emitting diodes (OLEDs) with the structures: Indium–tin oxide (ITO)/copper phthalocyanine(CuPc)/N,N′-bis-(1-naphenyl)-N,N′-biphenyl-1,1′-bipheny1-4-4′-diamine (NPB)/2-t-butyl-9,10-di-(2-naphthyl)anthracene (TBADN):EBDP/tris(8-hydroxyquinoline)aluminum(Alq₃)/LiF/Al and ITO/CuPc/NPB/TBADN:EBDP: 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/Alq₃/LiF/Al were studied by using EBDP as blue dopant. For the blue device, the maximum luminance and maximum efficiency were 26961 cd/m² and 8.29 cd/A, respectively, the luminance at a current density 20 mA/cm² was 1597 cd/m². For the white device, the maximum luminance of 32,291 cd/m², maximum efficiency 8.31 cd/A and the luminance of 1413 cd/m² at a current density 20 mA/cm² were obtained. The slow decrease of efficiency with the increase of current density indicates weak exciton–exciton annihilation, which is resulted from the large steric hindrance due to the non-planar structure of the fluorescence dye EBDP.     

The effect of the crystallization of indium tin oxide on indium tin oxide wet etching based on gate line with the structure of copper/indium tin oxide

In thin film transistor-liquid crystal display (TFT-LCD), the copper/indium tin oxide (Cu/ITO) layer was often used to be gate line. In this event, the patterning of ITO is necessary and important. However, the high temperature generated during Cu deposition will cause ITO to crystallize, which is not conducive to ITO etching. In this paper, the ITO films prepared by radio frequency (RF) magnetron sputtering were annealed according to the monitoring results of production line to simulate and study the effect of crystallization on the etching properties of ITO film. When the annealing temperature was less than 200°C, no large size grains were detected in ITO films, and the ITO films could be easily etched by etchant. However, the ITO films transformed from amorphous structure to polycrystalline structure after being annealed more than 200°C. After wet etching experiments, the polycrystalline ITO films could be hardly removed by etchant. The X-ray photoelectron spectroscopy (XPS) results showed that high temperature annealing induced a large amount of Sn⁴⁺ on ITO films surface. The Sn⁴⁺ was difficult to be dissolved by acid under normal conditions, which might be the most important factors that led to the greatly decreased etching rate for polycrystalline ITO films.     

Improvement of thermal bond strength and surface properties of Cyclic Olefin Copolymer (COC) based microfluidic device using the photo-grafting technique

This paper reports on the development and application of a permanent surface modification technique (photo-grafting) as an improved method for bonding COC (TOPAS) microfluidic substrates with a cover plate without affecting the channel integrity. This technique not only helps to increase the bond strength of the original device but also makes the surface hydrophilic which is essential for quick fluid flow while passing analytes through the device. The bond strength of the modified and unmodified chips was measured using the tensile and peel tests. It was observed that the bond strength of the modified chips has increased approximately 6 times to 1.18 (±0.08) MPa compared to 0.21 (±0.05) MPa for the unmodified chip. The modified surface was evaluated using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and water contact angle measurement. The contact angle of the modified surface decreased to 20 ± 5° from 85 ± 3° for the untreated substrate. Scanning electron microscope and confocal microscope examinations of cross-sectional profiles of the bonded chips indicated that the integrity of the channel features was successfully preserved.     

Coatings of indium tin oxide nanoparticles on various flexible polymer substrates: Influence of surface topography and oscillatory bending on electrical properties

Abstract— Coatings of indium tin oxide (ITO) nanoparticles on different flexible polymer substrates were investigated with respect to the achievable sheet resistance and their electrical behavior under oscillatory bending. As substrate materials, polyethyleneterephthalate (PET), polyethylenenaphthalate (PEN), polyetheretherketone (PEEK), and polyimide (PI) were chosen, the surface resistances on the different polymer substrates were compared as a function of annealing temperature and surface topography. The surface topography, which has a strong influence on the surface resistance, was characterized by means of a white‐light confocal (WL‐CF) microscope. On the PET substrate, which exhibits the smoothest surface, the coating of ITO nanoparticles shows the lowest sheet resistance of 2 kΩ/□ for a layer thickness of 3 μm and an annealing temperature of 200°C. Furthermore, the electrical behavior of coatings of ITO nanoparticles under oscillatory bending was investigated using a special device. These coatings show a cyclic change of the conductivity which can be explained by an alternating compression and extension of crack flanks under the applied stress. Due to the growing number of cracks with increasing number of cycles, a decrease of the conductivity is observed in the bent state as well as in the balanced state. For a small bending radii, the decrease of the conductivity is stronger due to more cracks caused by the higher tensile stresses in the layer. The electrical behavior of the coatings of the annealed ITO nanoparticles on PET films under oscillatory bending was compared with commercially available sputtered ITO coatings. The annealed coatings of ITO nanoparticles demonstrate better electrical properties under oscillatory bending than coatings of sputtered ITO. The different electrical behavior under oscillatory bending can be related to differences in crack formation.     

Low temperature deposited titanium boride thin films and their application to surface engineering of microscale mold inserts

Titanium boride thin films were deposited at low temperatures by balanced magnetron sputtering and inductively coupled plasma (ICP) assisted balanced magnetron sputtering. The chemical composition, surface morphology, structure, and mechanical properties of titanium boride thin films were characterized by X-ray photoelectron spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy, and instrumented nanoindentation. As compared to titanium boride films deposited by balanced magnetron sputtering, the increase in plasma density surrounding the substrate surface during film growth afforded by the ICP assist causes significant film densification and mechanical property improvement. The morphology of titanium boride thin films deposited onto microscale non-flat Ta substrates and their effectiveness as barrier coatings for microscale compression molding of Al was characterized by focused ion beam sectioning and SEM. The present results show the potential of low-temperature deposited, conformal, titanium boride thin films for engineering surfaces of microscale mold inserts for microscale pattern replication in reactive metals by compression molding.     

Mg2+离子表面修饰ZnO传感器阵列的乙醚敏感机理研究

为研究金属离子对金属氧化物半导体的表面敏化作用,以均匀沉淀法制备了ZnO纳米颗粒,并通过金属离子表面微滴注以及二次退火的方法制备出金属离子表面修饰的平面型ZnO气体传感器阵列。并以乙醚蒸汽为目标气体,进行气敏性能测试。发现大部分传感器对乙醚响应性很好,并且经过表面修饰,ZnO的乙醚敏感性能大多得到提升。特别地,Mg2+表面修饰的ZnO膜层展现了最优的气敏性能。X射线光电子能谱和光致发光谱证实,经过Mg2+表面修饰之后,氧空位缺陷浓度明显增加,并且表面羟基基团的数量显著减少,二者的协同作用构成了Mg2+表面修饰ZnO的敏化机制。     

Orientation and thickness dependence of electrical and gas sensing properties in heteroepitaxial indium tin oxide films

Heteroepitaxial indium tin oxide (ITO) films were grown on three differently oriented yttria-stabilized zirconia (YSZ) substrates ((1 0 0), (1 1 0), (1 1 1)) by rf magnetron sputtering, and their structural characteristics and electrical and gas sensing properties were investigated. The initially formed ITO exhibited an island structure on the very thin layer and became a continuous film after the prolonged deposition. The heteroepitaxial relationships between ITO films and YSZ substrates were confirmed by X-ray diffraction, pole figure, and high resolution transmission electron microscopy (HRTEM). The chemical composition, determined by X-ray photoelectron spectroscopy (XPS), was slightly different at early stage depending on the substrate orientation, but it became similar after the longer deposition. Hall measurements indicated that the electrical resistivity of ITO films decreased with increasing the deposition time (or film thickness) irrespective of the film orientation. The ITO film deposited on (1 1 0) YSZ for 10 s showed the highest electrical resistivity. The gas sensor fabricated from the ITO film on (1 1 0) YSZ deposited for 10 s showed the highest NO₂ gas response at relatively low temperature (100 °C), which was attributed to the higher Sn concentration and higher surface roughness of that film.     

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

The properties of tantalum nitride (TaN_x) thin films on silicon and low temperature co-fired ceramics based substrates were investigated with respect to their potential use for sensor elements operated under harsh environmental conditions. For deposition reactive direct current magnetron sputtering was applied at constant back pressure (=0.9 Pa) and plasma power (=1,000 W). In all experiments, the substrates were nominally unheated. The films were investigated electrically by four point probing. For morphological and chemical analyses, a large variety of techniques such as focussed ion beam, scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and glow discharge optical emission spectroscopy were used. Only by combining all these techniques for analysing TaN_x films synthesised with varying nitrogen content in the deposition chamber can a proper evaluation of the microstructure and the chemical composition be done. Both the microstructure and the chemical composition are influenced strongly with a resulting effect on the electrical film properties.     

A short route of covalent biofunctionaliztion of silicon surfaces

Covalently attached organic monolayers on etched Si(1 1 1) surfaces were prepared by heating solutions of 1-alkenes and 1-alkynes in a refluxing mesitylene. Surface modification was monitored by measurement of the static water contact angle, X-ray photoelectron spectroscopy (XPS), infrared reflection absorption spectroscopy (IRRAS), and atomic force microscopy (AFM). Flat and clean N-hydroxysuccinimide (NHS)-ester-terminated/1-decyl mixed monolayers were covalently attached in one step onto a silicon surface. This procedure allows a mild and rapid functionalization of the surface by substitution of the NHS-ester moieties with amines at room temperature. The NHS-ester groups were shown to be fully intact onto the surface. The surface reactivity of the NHS-ester moieties toward amines was qualitatively and quantitatively evaluated via the reaction with methoxytetraethyleneglycolamine (TEGamine) and finally functionalized with single strand and complete DNA molecules.Moreover, domains of DNA were selectively immobilized, on silicon surface making use of TEGamine, which acts as protein repelling agent and therefore prevented non-specific DNA adsorption. The resulting DNA-modified surfaces have shown excellent specificity, and chemical and thermal stability under hybridization conditions.     

Efficient white organic light‐emitting diodes based on a balanced split of the exciton‐recombination zone using a graded mixed layer as an electron‐blocking layer

Abstract— Efficient white organic light‐emitting diodes with both a graded mixed layer as the blue‐emitting layer and an electron‐blocking layer, and a DPVBi:Rubrene layer as a yellow‐emitting layer have been demonstrated. The mixing of the two colors occurs due to a balanced split of the exciton‐recombination zone by the graded mixed layer serving as the electron‐blocking layer. The white organic light‐emitting diode with an ITO/2‐TNATA 30 nm/NPB 30 nm/DPVBi:Rubrene (1.0 wt.%) 5 nm/NPB:DPVBi (9:1) 150 nm/NPB:DPVBi (5:5) 75 nm/NPB:DPVBi (3:7) 75 nm/NPB:DPVBi (2:8) 75 nm/NPB:DPVBi (0.5:9.5) 75 nm/BCP 5 nm/Alq³ 30 nm/LiF 0.5 nm/Al 100 nm structure is chosen as a device with an optimal configuration among devices investigated in this study. The employment of the graded mixed layer in the device is effective in suppressing the color shift at different voltages. The white light, with a Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.34), is obtained with an applied voltage of 10.5 V for the device. At the applied voltage, the luminance is 4882 cd/m² and the current efficiency is 5.03 cd/A.     

Nanoparticle Liquids for Surface Modification and Lubrication of MEMS Switch Contacts

Contact failures in microelectromechanical system (MEMS) switches, particularly during hot switching, prevent their widespread use. In this paper, a nanoparticle liquid (NPL) lubricant is synthesized and deposited on MEMS switch contacts as a nanotechnology-based lubricant. NPLs are monolithic hybrid materials comprised of an inorganic nanosized metallic core and an organic low viscosity corona. The NPL used here utilizes either Au or Pt nanoparticles as the core and a mercaptoethanesulfonate ionic liquid as the corona. Performance, reliability, and chemical/physical processes on hot-switched NPL-lubricated contact surfaces were investigated at high (1 mA) and low (10 ) currents using a micro/nanoadhesion apparatus as a MEMS switch simulator with in situ monitoring of contact resistance and adhesion force. This was coupled with ex-situ analyses of the contacts using scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and scanning Auger spectroscopy. NPLs exhibited improved electrical performance and durability (orders of magnitude improvement) as compared to uncoated and self-assembled monolayer-coated switch contacts. Improved performance and reliability results from the following: 1) controlled nanoscale surface roughness that spreads current through multiple nanocontacts; 2) restricted size melting regions and termination of nanowire growth (prevents shorting) during contact opening; 3) enhanced thermal and electrical conductivity that reduces lubricant degradation; and 4) lubricant self-healing (flow to damaged areas) as confirmed with physical and chemical analyses. Based on these results, NPLs show excellent potential as surface modifiers/lubricants for MEMS switch contacts.     

Single emitting layer white organic light-emitting device with high color stability to applied voltage

A new type of white organic light-emitting device has been fabricated incorporating a single light-emitting layer of bis(2-methyl-8-quinolinolato) (para-phenylphenolato) aluminum (III) (BAlq) doped with 2,5,8,11-tetra-tert-butylperylene (TBPe) and 5,6,11,12-tetraphenyl-naphthacene (rubrene). The configuration of the device was ITO/PVK:TPD/BAlq:TBPe:rubrene/Alq₃/Mg:Ag. By adjusting the proportion of the dopants (TBPe and rubrene) in the light-emitting layer, white light with Commission Internationale de l’Eclairage (CIE) coordinates of (0.34, 0.39) was obtained at an applied voltage of 8 V; the change of emission spectra was minimal when the voltage increased from 5 to 20 V. The device exhibited a maximum external quantum efficiency of 0.68% and a brightness of 1020 cd/m² at 8 V, the brightness increasing to 5723 cd/m² at 17 V.     

Fe2O3/SnO2和SnO2/Fe2O3双层薄膜的XPS分析

用X光光电子能谱(XPS),结合Ar~+刻蚀对Fe_2O_3/SnO_2及Fe_20_3/SnO_2双层薄膜进行分析.结果表明:Fe_2O_3/SnO_2膜表面,晶格氧的结合能为529.85eV,热处理前有大量吸附氧存在,在600℃退火后,大部分羟基、羰基形态的吸附氧解吸;SnO_2/Fe_2O_3膜表面,热处理前后都只有少量的吸附氧,经热处理后表面吸附氧却略有增加.双层薄膜中锡向氧化铁层的扩散较铁向氧化锡层的扩散强.扩散的结果,形成了一个数十纳米的过渡层,对元件的气敏性质产生一定的影响.     

Norland optical adhesive (NOA81) microchannels with adjustable wetting behavior and high chemical resistance against a range of mid-infrared-transparent organic solvents

Different methods to adjust the wetting behavior of surfaces of the UV-curable adhesive NOA81 were investigated and quantitatively characterized by dynamic contact angle measurements with an optical goniometer. A new method to make NOA81 surfaces hydrophobic by mixing an additive in the uncured polymer was presented. The effect was confirmed by surface roughness studies using atomic force microscopy and X-ray photoelectron spectroscopy measurements. The chemical resistance of NOA81 microfluidic channels was evaluated by flowing organic solvents therein. Emphasis was placed on IR-transparent organic solvents. A simple, low-cost method to fabricate chemically resistant, hydrophilic, hydrophobic and hybrid (hydrophilic and hydrophobic), all-polymer microfluidic channels made of NOA81 was reported. Applications like oil-in-water and water-in-oil droplet generation or handling of a multi-phase flow were presented to demonstrate the chemical resistance and the control over the wetting behavior of NOA81 microfluidic chips.     

Fabrication of high-aspect-ratio microscale Ta mold inserts with micro electrical discharge machining

We report fabrication of microscale Ta mold inserts by micro-electrical-discharge-machining (μEDM). Morphology, chemistry, and structure of the near-surface region of as-μEDMed Ta blanks have been characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. A TaC surface layer forms on as-μEDMed Ta surfaces. This altered surface layer was removed by electro-chemical-polishing. Further modification of Ta insert surfaces was accomplished by deposition of a conformal Ti-containing hydrogenated carbon coating. We demonstrate successful replication of high-aspect-ratio microscale structures in Al and Cu by compression molding with such surface-engineered Ta mold inserts.