多晶SiC/多孔硅结构材料的APCVD生长及表征

采用SiH₄-C₃H₈-H₂气体反应体系,通过常压化学气相淀积(APCVD)工艺在电化学腐蚀的多孔硅衬底上进行了多晶3C-SiC薄膜的生长,研究了多孔硅孔隙率对薄膜生长质量的影响．实验结果表明,当多孔硅孔隙率较低时,得到的是含有SiC(111)晶粒的多晶硅薄膜,随着孔隙率的增加,生长薄膜由富碳多孔SiC向多晶SiC薄膜过渡,表面平整度增加,并具有<111>晶向择优生长的特点．     

Effects of Thickness on the Electrical Conductivity of Sputtered YSZ Film with Nanocrystalline Columnar Microstructure

In order to investigate the effect of the thickness on the electrical conductivity of yttriastabilized zirconia(YSZ) film, the nanocrystalline columnar-structured YSZ film with thickness of 0.67-2.52 μm was prepared by magnetron sputtering through controlling the deposition time. All the sputtered films with different thicknesses consist of the main phase of cubic YSZ as well as a small amount of monoclinic YSZ. The thicker films exhibit a typical columnar grain structure based on the fractured cross-sectional SEM observations. The average diameters of columnar grains increase from about 40 nm to 100 nm with the film thickness from 0.67 μm to 2.52 μm according to TEM analysis. The thinnest YSZ film with 0.67 μm thickness shows the highest apparent electrical conductivity in the four films in 400-800 ℃ due to the contribution from the highly conductive film/substrate interfacial region. On the other hand, the real electrical conductivities of YSZ films increase with film thickness from 0.67 μm to 2.52 μm after eliminating the contribution of the film/substrate interface. The increasing film thickness leads to the grain growth as well as the decrement in the volumetric fraction of the resistive columnar grain boundary and a consequent higher real electrical conductivity.     

Si衬底上3C-SiC异质外延应力的消除

利用低压化学气相沉积方法在N型Si衬底上异质外延生长3C-SiC薄膜,研究和分析了不同碳化工艺和生长工艺对3C-SiC外延层的影响;探讨了Si衬底3C-SiC异质外延应力的消除机理.通过台阶仪和XRD对不同工艺条件下的外延层质量进行分析,得到最佳工艺条件的碳化温度为1000 ℃,碳化时间为5 min,生长温度为1200...     

衬底和热处理温度对ZnO薄膜的微观结构的影响

采用Sol-gel法,在普通载玻片和Si（100）上使用旋转涂覆技术制备了具有c轴择优取向生长的ZnO薄膜。利用XRD和SEM研究了衬底和热处理温度对ZnO薄膜的物相结构、表面形貌和（002）定向性的影响。结果表明,sol—gel旋涂法制备的ZnO薄膜为六角纤锌矿结构,玻璃衬底上生长的ZnO薄膜为多晶形态,Si（100）衬底表现出更优取向生长特性。随着热处理温度的升高,c轴择优取向程度逐渐增强,晶粒尺寸逐渐增大,ZnO的晶格参数先增加后减小。当温度在700℃时长出明显的柱状晶粒。     

Synthesis of Ti3SiC2/TiB2 Composite by In-situ Hot Pressing (HP) Method

Ti3SiC2/TiB2 composite was successfully obtained by hot pressing Ti/TiC/Si/B4C power mixtures.Volume fraction of TiB2 in Ti3SiC2/TiB2 composite can not exceed 10%.Incorporation of excessive TiB2 will affect the reactions process.TiC and Ti5Si3 were two important intermediate phases during the whole reactions.The microstructure characteristics of the Ti3SiC2/TiB2 composites were analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM).The experimental results show that the grains of Ti3SiC2/TiB2 composite are structured in a layered form,and the formation of TiB2 particles as reinforcements with elongated or equiaxed shape distributes in Ti3SiC2 matrix.     

Oriented Growth of PZT thick film embedded with PZT nanoparticles

This paper reports that dense and crack-free(100)oriented lead zirconate titanate(Pb(Zr0.52Ti0.48)O3,PZT)thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive.The thick film possesses single-phase perovskite structure and perfectly(100)oriented.The(100)orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest.The(100)orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing.The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest(100)orientation degree,which is 82.3%.     

Structure and internal stress of Au films deposited on Si02/Si(100) and mica by dc sputtering

Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200]and [311] are slightly more than those of [111] and [2201. An intemal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]- and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiO2/Si(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.     

Structure and internal stress of Au films deposited on SiO2／Si（100） andmica by dc sputtering

Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200] and [311] are slightly more than those of [111] and [220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]-and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiOJSi(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.     

磁控溅射参数对钛薄膜结构及阳极氧化的影响

采用直流磁控溅射的方法在导电玻璃(FTO)上制备柱状晶结构的钛薄膜,研究了磁控溅射电流和基底温度对溅射钛薄膜微观结构的影响,分析了柱状晶结构对后续阳极氧化TiO2纳米管结构的影响.利用场发射扫描电镜观察样品的形貌,X射线衍射(XRD)分析样品的晶型结构.结果表明,随着磁控溅射电流的增大,钛薄膜的晶粒尺寸增加,致密度先增大后减小,溅射电流过大过小都会降低薄膜的致密度;在300～450℃的温度区间,随基底温度的升高,钛薄膜的晶粒尺寸增加,致密度增加,柱状晶结构更均匀.将磁控溅射获得的钛薄膜进行阳极氧化处理,结果发现:排列致密的柱状晶钛薄膜有利于生长TiO2纳米管.     

异质结薄膜的铁电、磁性能及漏电流研究

采用溶胶凝胶方法在Si（100）衬底上生长了SrBi2Ta2O9/LaNiO3 (SBT/LNO)异质结薄膜,其中SrBi2Ta2O9薄膜呈高度（115）取向.测量了不同退火温度下异质结的电滞回线和漏电流密度,结果表明,700 ℃下退火的薄膜剩余极化值最高,漏电流最低,且表现出弱的室温铁磁行为.漏电流机理分析表明薄膜界面为欧姆接触.     

SrBi2Ta2O9/LaNiO3异质结薄膜的铁电、磁性能及漏电流研究

采用溶胶凝胶方法在Si（100）衬底上生长了SrBi2Ta2O9/LaNiO3（SBT/LNO）异质结薄膜,其中SrBi2Ta2O9薄膜呈高度（115）取向.测量了不同退火温度下异质结的电滞回线和漏电流密度,结果表明,700℃下退火的薄膜剩余极化值最高,漏电流最低,且表现出弱的室温铁磁行为.漏电流机理分析表明薄膜界面为欧姆接触.     

(110)和(002)择优取向ZnO薄膜的制备及光学性能研究

运用射频溅射法在Si和LaNiO3/Si衬底上分别制备了高度(002)和(110)取向的ZnO薄膜.通过X射线衍射(XRD)和扫描电子显微镜(SEM)表征,发现ZnO/LaNiO3/Si薄膜的(110)取向度高达96%,ZnO/Si薄膜为(002)择优取向,两种薄膜表面均致密平整,晶粒尺寸小于80nm.光致发光结果表明,ZnO/LaNiO3/Si薄膜的光致发光峰主要为带边发射的紫外光,而ZnO/Si薄膜的光致发光峰主要为过量氧导致的缺陷引起的缺陷发光峰.因此,采用LaNiO3薄膜作为ZnO在Si衬底上生长的过渡层,能够有效抑制缺陷发光,改善ZnO薄膜的发光性能.     

硫粉气化温度对制备WS2薄膜的影响

采用熔融盐辅助化学气相沉积（CVD）法在蓝宝石（Al₂O₃）衬底上制备WS2薄膜,改变硫粉的气化温度（750~800 ℃）,探寻其对WS₂薄膜生长的影响,为制备出大面积WS₂薄膜提供理论依据。采用光学显微镜、扫描电子显微镜（SEM）和拉曼（Raman）光谱对WS₂薄膜的形貌、结晶性和厚度进行分析。800 ℃时,WS₂薄膜平均边长可达310 μm,Raman特征峰的波数差为64.60 cm^-1（单层）。随着硫粉气化温度的升高,WS₂薄膜的生长经历了形貌及尺寸的转变,这表明在沉积过程中,硫粉引入时机对WS₂薄膜的形核、生长至关重要,适当的气化温度可以制备出尺寸较大、结晶性能良好的WS₂薄膜。     

PCVD-Ti(CNO)薄膜的性能及结构分析

研究了Ｔｉ（ＣＮ）薄膜内氧的作用,研究结果表明,Ｔｉ（ＣＮ）薄膜内加入氧后可以消除薄膜的柱状晶结构,薄膜的断面呈致密的纤维状组织。随着反应气体中空气或ＣＯ２气体流量的增加,Ｔｉ（ＣＮＯ）薄膜的硬度呈上升趋势,并在空气的流量为４０ｍＬ·ｍｉｎ－１或ＣＯ２的流量为１５ｍＬ·ｍｉｎ－１时（分别约占气体总量的１５％和６％）,薄膜的硬度达到最大值。     

衬底效应对LiTaO3薄膜制备的影响

用溶胶凝胶法在N型硅、P型硅、石英、铂、镍衬底上制备了钽酸锂(LiTaO3)薄膜,用XRD和SEM对钽酸锂薄膜性能参数进行了表征;发现掺杂少量环氧树脂能提高钽酸锂薄膜的均匀性,改善薄膜与衬底的粘附性;研究了衬底效应与薄膜厚度的关系,薄膜厚度超过0.2 μm,Ni衬底的XRD峰值强度几乎不再出现,说明衬底对薄膜初始结晶取向有重要影响;利用不同衬底上生长钽酸锂薄膜,XRD研究结果表明:N型硅、P型硅、石英衬底上只能制备多晶钽酸锂薄膜,铂衬底上制备的钽酸锂薄膜在(012)晶向有强大的择优取向性,镍衬底上制备的钽酸锂薄膜有更好的C轴择优取向性,C轴择优取向系数可达0.082。     

Influences of microstructure and texture on crack propagation path of X70 acicular ferrite pipeline steel

The aspects of two pipeline steels with different technologies were investigated by using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD).The microstructure presents a typical acicular ferrite characteristic with free particles of martensite/austenite (M/A) constituent,which distributes in grains and at grain boundaries.The bulk textures of the pipeline steel plate are {112}<110> and <111> fibers,respectively,and the {112} <110> component is the favorable texture benefiting for drop weight tear test.Moreover,low angle boundaries and low coincidence site lattice boundaries are inactive and more resistant to fracture than high energy random boundaries.     

The growth of γ-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire

Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050℃ to 1100℃. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.     

Texture of deformed Cu-Cr-Zr alloys

The influences of plastic deformation, aging treatment, and alloying elements on the texture of Cu-Cr-Zr alloys were explored. The texture component and intensity of Cu-Cr-Zr alloys under various working conditions after aging treatment were characterized using the orientation distributing function (ODF). The influence of Zr content on the texture of Cu-Cr-Zr alloys was also analyzed. The reduction pass and deformation level were primary factors influencing the texture. Rolling texture appeared in a rolled plate and the fibrous textures of {111} and {001} were detected after 80% deformation. Fibrous texture with a main constituent of {111} improved the tensile strength of the alloy wire. The texture contents of {110}<331> and {110}<112> were predominated, whereas, those of {113}<332> and {112}<111> were in the minority in the Cu-Cr-Zr alloy with a higher Zr content (>0.5wt%). However, in the samples with a lower Zr content (<0.1wt%), the texture contents of {113}<332>, {112}<111>, and {111}<110> were in the majority.     

Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si (100) and Si (111) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1°, while the minimum is 0.353°. This result is better than the minimum FWHM (about 2°) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(111).     

退火温度对Ti-IF钢性能及织构的影响

对冷轧压下率为80%、厚1 mm的Ti-IF钢经不同温度退火处理后进行拉伸试验,测量其塑性应变比r值。观察退火试样的显微组织,并利用电子背散射衍射技术（EBSD）对其性能和再结晶织构进行分析。结果表明,冷轧试验钢分别在780、810、840℃退火3 min后,均发生了再结晶;随着退火温度的升高,大多数晶粒尺寸由5-6μm增大到9-10μm;试验钢的r值随退火温度升高而增大;退火钢再结晶织构表现为强烈的{111}织构,主要由{111}〈110〉和{111}〈112〉两类取向晶粒组成。