Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 10¹³ cm^-2, resistivity at 4.6 × 10^-3 Ω∙cm, and Hall mobility at 14.6 cm²/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm²/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm²/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs.     

Substrate temperature effects on the electron field emission properties of nitrogen doped ultra-nanocrystalline diamond

For the purpose of improving the electron field emission properties of ultra-nanocrystalline diamond (UNCD) films, nitrogen species were doped into UNCD films by microwave plasma chemical vapor deposition (MPCVD) process at high substrate temperature ranging from 600° to 830 °C, using 10% N₂ in Ar/CH₄ plasma. Secondary ion mass spectrometer (SIMS) analysis indicates that the specimens contain almost the same amount of nitrogen, regardless of the substrate temperature. But the electrical conductivity increased nearly 2 orders of magnitude, from 1 to 90 cm^− 1 Ω^− 1, when the substrate temperature increased from 600° to 830 °C. The electron field emission properties of the films were also pronouncedly improved, that is, the turn-on field decreased from 20 V/μm to 10 V/μm and the electron field emission current density increased from less than 0.05 mA/cm² to 15 mA/cm². The possible mechanism is presumed to be that the nitrogen incorporated in UNCD films are residing at grain boundary regions, converting sp³-bonded carbons into sp²-bonded ones. The nitrogen ions inject electrons into the grain boundary carbons, increasing the electrical conductivity of the grain boundary regions, which improves the efficiency for electron transport from the substrate to the emission sites, the diamond grains.     

Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures

The electron field emission (EFE) properties of Si nanostructures (SiNS), such as Si nanorods (SiNR) and Si nanowire (SiNW) bundles were investigated. Additionally, ultrananocrystalline diamond (UNCD) growth on SiNS was carried out to improve the EFE properties of SiNS via forming a combined UNCD/SiNS structure. The EFE properties of SiNS were improved after the deposition of UNCD at specific growth conditions. The EFE performance of SiNR (turn-on field, E₀ = 5.3 V/μm and current density, J_e = 0.53 mA/cm² at an applied field of 15 V/μm) was better than SiNW bundles (turn-on field, E₀ = 10.9 V/μm and current density, J_e < 0.01 mA/cm² at an applied field of 15 V/μm). The improved EFE properties with turn-on field, E₀ = 4.7 V/μm, current density, J_e = 1.1 mA/cm² at an applied field of 15 V/μm was achieved for UNCD coated (UNCD grown for 60 min at 1200 W) SiNR. The EFE property of SiNW bundles was improved to a turn-on field, E₀ = 8.0 V/μm, and current density, J_e = 0.12 mA/cm² at an applied field of 15 V/μm (UNCD grown for 30 min at 1200 W).     

Electron field emission properties on UNCD coated Si-nanowires

The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE–CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE–CVD time interval for coating the UNCD films, attaining small turn-on field (E₀ = 6.4 V/μm) and large emission current density (J_e = 6.0 mA/cm² at 12.6 V/μm). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E₀)_SiNWs = 8.6 V/μm and (J_e)_SiNWs < 0.01 mA/cm² at the same applied field) and is comparable to those for carbon nanotubes.     

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors

Two-dimensional (2D) molybdenum disulfide (MoS₂) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS₂ nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS₂ nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS₂. In addition, we find that the MoS₂ nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 10⁵, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm²/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS₂ nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS₂ FETs.     

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 10¹⁷ cm⁻³ and a high electron mobility of 446.42 cm² V⁻¹ s⁻¹. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm⁻¹ and an estimative threshold field of 3.36 V μm⁻¹.     

Structure and photovoltaic properties of ZnO nanowire for dye-sensitized solar cells

Aligned ZnO nanowires with different lengths (1 to approximately 4 μm) have been deposited on indium titanium oxide-coated glass substrates by using the solution phase deposition method for application as a work electrode in dye-sensitized solar cells (DSSC). From the results, the increases in length of zinc oxide (ZnO) nanowires can increase adsorption of the N3 dye through ZnO nanowires to improve the short-circuit photocurrent (J_sc) and open-circuit voltage (V_oc), respectively. However, the J_sc and V_oc values of DSSC with ZnO nanowires length of 4.0 μm (4.8 mA/cm² and 0.58 V) are smaller than those of DSSC with ZnO nanowires length of 3.0 μm (5.6 mA/cm² and 0.62 V). It could be due to the increased length of ZnO nanowires also resulted in a decrease in the transmittance of ZnO nanowires thus reducing the incident light intensity on the N3 dye. Optimum power conversion efficiency (η) of 1.49% was obtained in a DSSC with the ZnO nanowires length of 3 μm.     

Array geometry, size and spacing effects on field emission characteristics of aligned carbon nanotubes

Microwave plasma-enhanced chemical vapor deposition (MPECVD) has been shown capable of producing vertically aligned mutli-walled CNTs as a result of self-bias of the microwave plasma. These CNTs are relevant to field emission applications. However, it is also known that closely packed or mat-like CNTs are not effective field emitters due to field screening effects among neighboring tubes. In this study, an approach whereby “micro-” patterning of CNT arrays, adjusting their geometry, size and array spacing by conventional photolithography, rather than “nano-” patterning a single CNT by electron-beam lithography, is employed to fabricate efficient emitters with enhanced field emission characteristics. MPECVD with catalysts are used on Si substrate to fabricate micropatterned vertically aligned CNT arrays with various geometries, sizes and spacing. The field emission results show that a circular array with 20 μm spacing has the lowest turn-on field of 2 V/μm at 1 μA/cm² and achieves the highest current density of 100 μA/cm² at 3 V/μm. Investigation on the array spacing effect shows that 10 × 10 μm CNT square array with an array spacing of 20 μm displays the lowest turn-on field of 9 V/μm and achieved a very high current density of 100 mA/cm² at 20 V/μm. Furthermore, the results suggest that the array spacing of the 10 × 10 μm CNT square array can be reduced to at least 20 μm without affecting the field enhancement factor of the emitter. The results clearly indicate further optimization of spacing in the arrays of CNT emitters could result in lower turn-on field and higher current density.     

Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications

The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E−5 mA/cm² to 1 × 10E−2 mA/cm². The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp³-bonded carbons into sp²-bonded ones) in UNCD films.     

Green material: ecological importance of imperative and sensitive chemi-sensor based on Ag/Ag2O3/ZnO composite nanorods

In this report, we illustrate a simple, easy, and low-temperature growth of Ag/Ag₂O₃/ZnO composite nanorods with high purity and crystallinity. The composite nanorods were structurally characterized by field emission scanning electron microscopy, X-ray powder diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy which confirmed that synthesized product have rod-like morphology having an average cross section of approximately 300 nm. Nanorods are made of silver, silver oxide, and zinc oxide and are optically active having absorption band at 375 nm. The composite nanorods exhibited high sensitivity (1.5823 μA.cm⁻².mM⁻¹) and lower limit of detection (0.5 μM) when applied for the recognition of phenyl hydrazine utilizing I-V technique. Thus, Ag/Ag₂O₃/ZnO composite nanorods can be utilized as a redox mediator for the development of highly proficient phenyl hydrazine sensor.     

Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 10³ to 10⁴ cm²/(V × sec) by varying the ditertiarybutyl selenide (DtBSe) precursor line pressure from 0 to 0.4 Torr, leading to an increase of the carrier density in the transistor channel of more than two orders of magnitude. By keeping the DtBSe line pressure at 0.1 Torr, the carrier density in the nanowire channel measures ≈ 5 × 10¹⁷ cm^-3 ensuring the best peak transconductances (> 100 mS/m) together with very low resistivity values (70 Ω × μm) and capacitances in the attofarad range. These results are particularly relevant for further optimization of the nanowire-FET terahertz detectors recently demonstrated.PACS: 73.63.-b, 81.07.Gf, 85.35.-p     

One-pot hydrothermal synthesis of Mn3O4 nanorods grown on Ni foam for high performance supercapacitor applications

Mn₃O₄/Ni foam composites were synthesized by a one-step hydrothermal method in an aqueous solution containing only Mn(NO₃)₂ and C₆H₁₂N₄. It was found that Mn₃O₄ nanorods with lengths of 2 to 3 μm and diameters of 100 nm distributed on Ni foam homogeneously. Detailed reaction time-dependent morphological and component evolution was studied to understand the growth process of Mn₃O₄ nanorods. As cathode material for supercapacitors, Mn₃O₄ nanorods/composite exhibited superior supercapacitor performances with high specific capacitance (263 F · g^-1 at 1A · g^-1), which was more than 10 times higher than that of the Mn₃O₄/Ni plate. The enhanced supercapacitor performance was due to the porous architecture of the Ni foam which provides fast ion and electron transfer, large reaction surface area, and good conductivity.     

Plasma post-treatment process for enhancing electron field emission properties of ultrananocrystalline diamond films

This paper demonstrated the plasma post-treatment (ppt) process for modifying the granular structure of ultrananocrystalline diamond (UNCD) films so as to improve their electron field emission (EFE) properties. The ppt-processed UNCD films exhibited improved EFE properties as turn-on field of E₀ = 7.0 V/μm (J_e = 0.8 mA/cm² at 17.8 V/μm). TEM investigation revealed that the prime factor, which enhanced the EFE properties of the UCND films, is the induction of nano-graphitic clusters due to the ppt-process. However, for achieving such a goal, the granular structure of the primary UNCD layer has to be relatively open. That is, the size of grains should be sufficiently small and the grain boundaries should be of considerable thickness, containing abundant hydro-carbon species. Such a simple and robust process for synthesizing conductive UNCD films is especially useful for practical applications.     

Rapid identification of bacteria utilizing amplified dielectrophoretic force-assisted nanoparticle-induced surface-enhanced Raman spectroscopy

Dielectrophoresis (DEP) has been widely used to manipulate, separate, and concentrate microscale particles. Unfortunately, DEP force is difficult to be used in regard to the manipulation of nanoscale molecules/particles. For manipulation of 50- to 100-nm particles, the electrical field strength must be higher than 3 × 10⁶ V/m, and with a low applied voltage of 10 V_p-p, the electrode gap needs to be reduced to submicrons. Our research consists of a novel and simple approach, using a several tens micrometers scale electrode (low cost and easy to fabricate) to generate a dielectrophoretic microparticle assembly to form nanogaps with a locally amplified alternating current (AC) electric field gradient, which is used to rapidly trap nanocolloids. The results show that the amplified DEP force could effectively trap 20-nm colloids in the nanogaps between the 5-μm particle aggregates. The concentration factor at the local detection region was shown to be approximately 5 orders of magnitude higher than the bulk solution. This approach was also successfully used in bead-based surface-enhanced Raman spectroscopy (SERS) for the rapid identification of bacteria from diluted blood.     

Quantum dot cascade laser

We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm^-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation.

PACS

42.55.Px; 78.55.Cr; 78.67.Hc     

DNA stretching on the wall surfaces in curved microchannels with different radii

DNA molecule conformation dynamics and stretching were made on semi-circular surfaces with different radii (500 to 5,000 μm) in microchannels measuring 200 μm × 200 μm in cross section. Five different buffer solutions - 1× Tris-acetate-EDTA (TAE), 1× Tris-borate-EDTA (TBE), 1× Tris-EDTA (TE), 1× Tris-phosphate-EDTA (TPE), and 1× Tris-buffered saline (TBS) solutions - were used with a variety of viscosity such as 40, 60, and 80 cP, with resultant 10⁻⁴ ≤ Re ≤ 10⁻³ and the corresponding 5 ≤ Wi ≤ 12. The test fluids were seeded with JOJO-1 tracer particles for flow visualization and driven through the test channels via a piezoelectric (PZT) micropump. Micro particle image velocimetry (μPIV) measuring technique was applied for the centered-plane velocity distribution measurements. It is found that the radius effect on the stretch ratio of DNA dependence is significant. The stretch ratio becomes larger as the radius becomes small due to the larger centrifugal force. Consequently, the maximum stretch was found at the center of the channel with a radius of 500 μm.     

Fabrication of cubic PtCu nanocages and their enhanced electrocatalytic activity towards hydrogen peroxide

Cubic PtCu nanocages (NCs) were successfully synthesized through a redox reaction using cuprous oxide (Cu₂O) as a sacrificial template and reducing agent. The porous PtCu NCs were composed of amounts of PtCu nanograins with an average particle size of 2.9 nm. The electrocatalytic performance of the PtCu NC electrode towards H₂O₂ was studied by cyclic voltammetry (CV) and chronoamperometry. The prepared PtCu NC electrode exhibited excellent electrocatalytic activity towards H₂O₂, with a wide liner range from 5 μM to 22.25 mM, a relatively high sensitivity of 295.3 μA mM^-1 cm^-2, and a low detection limit of 5 μM (S/N = 3). The hollow porous nanostructure has potential applications in biosensors.     

One-dimensional CuO nanowire: synthesis,electrical, and optoelectronic devices application

In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 1¯ 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm²V^-1 s^-1 and hole concentration of 1.34 × 10¹⁸ cm^-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 10² A W^-1, 3.95 × 10² and 6.38 × 10¹¹ cm Hz^1/2 W^-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.     

Thin and long silver nanowires self-assembled in ionic liquids as a soft template: electrical and optical properties

Thin and long silver nanowires were successfully synthesized using the polyvinylpyrrolidone (PVP)-assisted polyol method in the presence of ionic liquids, tetrapropylammonium chloride and tetrapropylammonium bromide, which served as soft template salts. The first step involved the formation of Ag nanoparticles with a diameter of 40 to 50 nm through the reduction of silver nitrate. At the growing stage, the Ag nanoparticles were converted into thin and long one-dimensional wires, with uniform diameters of 30 ± 3 nm and lengths of up to 50 μm. These Ag nanowires showed an electrical conductivity of 0.3 × 10⁵ S/cm, while the sheet resistance of a two-dimensional percolating Ag nanowire network exhibited a value of 20 Ω/sq with an optical transmittance of 93% and a low haze value.     

Ferroelectric and magnetic properties of Nd-doped Bi4 ? xFeTi3O12 nanoparticles prepared through the egg-white method

Multiferroic behavior of Bi_{4 − x}Nd_xFeTi₃O₁₂ (0.0 ≤ × ≤ 0.25, × = 0.05) ceramic nanoparticles prepared through the egg-white method was investigated. The dielectric properties of the samples show normal behavior and are explained in the light of space charge polarization. Room temperature polarization-electric field (P-E) curves show that the samples are not saturated with maximum remanence polarization, P_r = 0.110 μC/cm², and a relatively low coercive field, E_c = of 7.918 kV/cm, at an applied field of 1 kV/cm was observed for 5% Nd doping. The room temperature M-H hysteresis curve shows that the samples exhibit intrinsic antiferromagnetism with a weak ferromagnetism. These properties entitle the grown nanoparticles of BNFT as one of the few multiferroic materials that exhibit decent magnetization and electric polarization.