Preparation and magnetic properties of electrodeposited [Co/Zn] multilayer films

In this report we describe some experimental results concerning the preparation by electrodeposition and characterization of Co/Zn multilayer films, a system of special significance because Co and Zn are immiscible in a large range of compositions, permitting an easier adaptation of the sharp interfaces and the magnetic interactions between layers, with a view to obtain technological applications in nano-electronics. We established the working parameters for electrodeposition of multilayer films based on Co and Zn nanoscale layers, using a dual-bath potentiostatic electrodeposition method. The effect of the first electrodeposited layer growth process on the structure and magnetic properties of the multilayer were studied by using two series of multilayers of varying periods, starting with Co or Zn layers, respectively (with the same total thickness of Co layers, namely 50 layers of 5 nm thick, but various Zn layer thickness). These properties were also studied as a function of the Zn layer thicknesses (varying between 0.1 nm and 5.9 nm), for the two series of films. The magnetoresistance (in the current in plane configuration with dc magnetic field applied in the film plane), varied with Zn layer thickness, exhibiting a giant magnetoresistance contribution of about 30% in the case of [Co (5 nm)/Zn (2.7 nm)]₅₀ films.     

The effect of growth temperature on the coaxial InxGa1 − xN/GaN nanowires grown by metalorganic chemical vapor deposition

We report on the growth of coaxial In_xGa_1 − xN/GaN nanowires (NWs) on Si(111) substrates by using pulsed flow metalorganic chemical vapor deposition. The coaxial In_xGa_1 − xN/GaN NWs were grown by a two step process in which the core (GaN) structure was grown at a higher temperature followed by the shell (In_xGa_1 − xN) structure at a lower temperature. Dense and well-oriented coaxial In_xGa_1 − xN/GaN NWs were grown with an average diameter and length of about 300 ± 50 nm and 1.5-2.0 μm, respectively. The coaxial In_xGa_1 − xN/GaN NW was confirmed by cathodoluminescence mapping and high-resolution transmission electron microscopy. It is proposed that the critical dissociation of precursors at an elevated growth temperature can lead to a clear formation of an outer-shell in coaxial In_xGa_1 − xN/GaN NWs.     

Manipulation of crystalline orientation and optical absorption of Cu nanowire arrays embedded in anodic aluminum oxide templates

Cu nanowires (NWs) with controlled crystalline orientation were obtained via electrodeposition inside the nanochannels of anodic aluminum oxide templates. By adjusting electrolyte composition, the orientation of Cu NWs was manipulated between [100] and [110]. [100]- and [110]-oriented single-crystal Cu NWs were also achieved under lower electrodeposition voltages in sulfate electrolyte and citrite electrolyte, respectively. Optical absorption spectrum measurements reveal that the surface plasma resonance peak of the Cu NW arrays has an obvious blue-shift of 11 nm when the orientation of Cu NWs is turned from [100] to [110].     

Structural and magnetic properties of Co and Co71Ni29 nanowire arrays prepared by template electrodeposition

A comparative study on the structural and magnetic properties of Co and Co₇₁Ni₂₉ nanowire arrays prepared by AC electrodeposition in alumina templates has been presented. The Co and Co₇₁Ni₂₉ nanowires observed by SEM and TEM have a 45 nm diameter and exhibit high aspect ratio. Also, the nanowires of both Co and Co₇₁Ni₂₉, determined by XRD, have an identical crystallographic structure. The Co₇₁Ni₂₉ nanowires exist in a cobalt solid solution. Both the as-obtained Co and Co₇₁Ni₂₉ nanowire arrays measured by VSM show obvious magnetic anisotropy, dominated by shape anisotropy. Compared to the Co nanowire arrays, Co₇₁Ni₂₉ nanowire array shows an enhanced coercivity Hc (⊥) and approximate square ratio Mr/Ms(⊥).     

Magnetic properties of Zn1−xCoxO bulks prepared by hot pressing

Zn_1−xCo_xO-diluted magnetic semiconductor bulks have been prepared by hot pressing. Mixed powders of pure ZnO and CoO were compacted under pressure of 10 MPa at the temperature of 1073 K. Then, the samples were annealed in vacuum at the temperature range from 673 K to 873 K for 10 h. The crystal structure and magnetic properties of Zn_1−xCo_xO bulks have been investigated by X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). X-ray photoelectron spectroscopy (XPS) and was used to study chemical valence of zinc and cobalt in the samples. The results showed that Zn_1−xCo_xO samples had c-axis-oriented wurtzite symmetry neither cobalt nor cobalt oxide phase was found in the samples if x was less than 0.15. Zn and Co were existed in Zn_0.9Fe_0.1O sample in Zn²⁺ and Co²⁺ states. The results of VSM experiment proved the room temperature ferromagnetic properties (RTFP) of Co-doped ZnO samples. The saturation magnetization and the coercivity of Zn_0.9Co_0.1O sample, observed in the M–H curve, were about 0.22 emu/g and 300 Oe, respectively.     

High frequency magnetic mechanism of Ni-substituted Co2Z hexagonal ferrite

The magnetic properties, especially the high frequency magnetic mechanism, of Ni-substituted Co₂Z hexagonal ferrite were studied. The polycrystalline Z-type hexagonal ferrite of Ba₃Ni_xCo_2−xFe₂₄O₄₁ (0 ≤ x ≤ 2) were prepared by solid-state reaction. The results indicate that Ni-substituted Co₂Z samples all exhibit typical soft magnetic character. Substitution of Ni for Co will turn the planar magnetocrystalline anisotropy of Co₂Z to uniaxial anisotropy when x ≥ 1, so that the permeability drops dramatically and domain wall resonance appears in the frequency spectra. With the rise of Ni amount or sintering temperature, domain wall resonance strengthens gradually.     

Magnetic and dielectric properties of Co–Zn ferrite

Nanocrystalline powders of Co substituted Zn ferrite with the chemical formula Co_xZn_1−xFe₂O₄ (x = 0, 0.2, 0.4, 0.6, 0.8, 1) were synthesized by sol–gel autocombustion method using tartaric acid as fuel agent. The samples were sintered in static air atmosphere for 7 h at 773 K, 7 h at 973 K and 10 h at 1173 K. The organic phase extinction and the spinel phase formation were monitored by means of Fourier transform infrared spectroscopy. The X-ray diffraction patterns analysis confirmed the spinel single phase accomplishment. Crystallite size, average grains size, lattice parameter and cation distribution were estimated. Magnetic behavior of the as-obtained samples by means of M-H hysteresis measurements was studied at room temperature. Permeability and dielectric permittivity at room temperature versus frequency was the subject of a comparative study for the Co_xZn_1−xFe₂O₄ series. In agreement with the proposed cation distribution the sample with Co_0.8Zn_0.2Fe₂O₄ formula exhibits the optimal magnetic and dielectric properties.     

Field emission of Co nanowires in polycarbonate template

The Co nanowire arrays were synthesized by electrodeposition in polycarbonate template (PC) with 4 μm thickness. Electron field emission properties of cobalt nanowires were studied for wires with different aspect ratios, R ranged between 10 and 60, while the diameter of wires was fixed about 50 nm. The field emission properties of the samples showed low turn on electric field (E_to) with values varying between 2.9 and 11.3 V/μm showing a minimum value for R = 20 (E_to < 3 V/μm). On the other hand, the enhancement factor shows a peak for nanowires length about 1 μm. Field emission data using the Fowler-Nordhiem theory showed nearly straight-line nature confirming cold field emission of electrons. The fabricated field emitter arrays of cobalt nanowires in the PC templates opens the possibility of fabricating flexible flat panel displays.     

Effect of the Electrodeposition Frequency,Wave Form,and Thermal Annealing on Magnetic Properties of [Co0.975Cr0.025]0.99Cu0.01 Nanowire Arrays

Highly ordered [Co _0.975Cr _0.025]_0.99Cu _0.01 nanowire arrays were electrodeposited by conducting alternating current (AC) conditions from sulfate-based electrolyte into nanopores of anodic aluminum oxide (AAO) template with 37 nm pore diameter and the interpore distances of almost 50 nm. Fabricated nanowire arrays were characterized using scanning electron microscopy, alternating gradient force magnetometer, and X-ray diffraction. The results illustrated that varying frequency, wave form, and annealing procedure had influence on magnetic properties of as deposited nanowires. The nanowire arrays electrodeposited at different electrodeposition frequencies show remarkably different magnetic behaviors. Due to increasing of the electrodeposition frequency, the rate of ions for reduction was decreased. The nanowires prepared at various wave form illustrated insignificant impact on magnetic properties. X-ray diffraction patterns display that both as-deposited and annealed nanowire arrays expose the same structure. The raised value of coercivity has been determined in annealed nanowire arrays. Magnetization measurements show that the maximum value of coercivity for [Co _0.975]_0.99Cu _0.01 nanowires is observed at high temperature.     

Static magnetic properties of Co and Ru substituted Ba-Sr ferrite

M-type hexagonal ferrite powders, Ba_0.5Sr_0.5Co_xRu_xFe_(12−2x)O₁₉ (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2) have been synthesized by conventional ceramic method. Magnetic properties have been investigated as a function of substitution of Co and Ru ions at applied external field of 10 kOe. XRD and SEM revealed hexagonal structure for these ferrites. The Co and Ru ions substitution cause increase in saturation magnetization and rapid decrease in magnetocrystalline anisotropy at lower substitution. The magnetic parameters variation has been explained by taking into account preferential site occupancy of sublattice sites by substituted ions. Curie temperature decreases with substitution due to weakening of superexchange interaction. The obtained hysteresis parameters suggest that the proposed materials cannot be used for recording applications.     

Magnetic properties and microstructure of TbCo/(SiNx/Co)n films

The Tb₃₂Co₆₈/(SiN_x/Co)_n films (n = 0 – 3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb₃₂Co₆₈/(SiN_x/Co)_n films are perpendicular to the film plane. It is found that the saturation magnetization (M_s) and perpendicular coercivity (H_c⊥) of the Tb₃₂Co₆₈/(SiN_x/Co)₃ film are 263 emu/cm³ and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiN_x/Co)_n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiN_x/Co)_n layers and TbCo layer. Therefore, the H_c⊥ values are profoundly influenced by the interface roughness.     

Synthesis and electromagnetic properties of microwave absorbing material: Cox(Cu0.5Zn0.5)1−xFe2O4 (0 < x < 1) nanoparticles

Spinel ferrite Co_x(Cu_0.5Zn_0.5)_1−xFe₂O₄ over a compositional range 0 < x < 1 was prepared using a simple hydrothermal method. Particle sizes could be varied from 14 to 25 nm by changing the x value. X-ray diffraction results confirmed that all the as-prepared nanoparticles revealed typical spinel structure and transmission electron microscopy images showed that the particle size of the samples increased with increasing x value. The magnetic properties of the as-prepared Co_x(Cu_0.5Zn_0.5)_1−xFe₂O₄ nanoparticles have been systematically examined. The maximum saturation magnetization existed at the highest Co content (x = 1). The electromagnetic properties of all the samples have been measured by an Agilent network analyzer and the results showed that Co_0.1(Cu_0.5Zn_0.5)_0.9Fe₂O₄ possessed the best microwave absorbing properties.     

Stability and electronic properties of ZnxCd1−xO alloys

We investigated the structural and electronic properties of Zn_xCd_1−xO alloys, with Zn concentrations varying from 0% up to 100%. The calculations are based on the total energy calculations within the hybrid full potential augmented plane-wave plus local orbitals (APW+lo) method. We have used the local density approximation for the exchange and correlation potential. In particular we have studied the relative stability of several configurations of Zn_xCd_1−xO in rocksalt (B1) structure (the ground state configuration of CdO compound), or wurtzite (B4) structure (the ground state configuration of ZnO compound). The ground state properties, equilibrium lattice constants, bulk moduli, cohesive energies, and band structures for all Zn concentrations are presented. The densities of electron states are also determined for both the binary and their related ternary alloys. It is found that for Zn concentration lower than that of x = 0.625, the favored structure is a NaCl phase, while for Zn concentration x ≥ 0.625; the favored structure is a wurtzite phase. A model structure of 16-atom supercell is used.     

Characterization of ZnO-In2O3 transparent conducting films by pulsed laser deposition

Transparent conducting oxide (TCO) films in the ZnO-In₂O₃ system were prepared by a pulsed laser deposition method. A target that consists of the mixture of ZnO and In₂O₃ powders was used. Influences of the target composition x (x = [Zn]/([Zn] + [In])) and heater temperature on structural, electrical and optical properties of the TCO films were examined. Introduction of oxygen gas into the chamber during the deposition was necessary for improvement in the transparency of the deposited films. The amorphous phase was observed for a wide range of x = 0.20-0.60 at 110 °C. Minimum resistivity was 2.65 × 10⁻⁴ Ω cm at x = 0.20. The films that showed the minimum resistivity had an amorphous structure and the composition shifted toward larger x, as the substrate temperature increased. The films were enriched in indium compared to the target composition and the cationic In/Zn ratio increased as the substrate temperature was increased.     

Effect of Sb doping on the opto-electronic properties of SnO2 nanowires

Antimony (Sb) doping of SnO₂ nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO₂ NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO₂ NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO₂ NW FETs.     

Improvement of magnetic characteristics and electrical properties of FeCoHfO/AlOx multilayered films

High permeability magnetic films can enhance the inductance of thin-film inductors in DC-DC converters. In order to obtain high permeability, effective uniaxial anisotropic field should be as low as possible. A multilayered technique (laminating the magnetic layers with oxide spacers) was exploited to improve the magnetic properties of thick films. The FeCoHfO/AlO_x multilayered films were fabricated by dc reactive magnetron sputtering. Inserting an insulator (AlO_x) layer can decrease the magneto-elastic anisotropy by reducing the residual stress of the FeCoHfO magnetic films. The anisotropic field and resistivity of the FeCoHfO/AlO_x multilayered films were evidently improved by multilayered coating. With this optimum configuration of 9 layers structure [FeCoHfO (133 nm)/AlO_x (10 nm)]₉, low anisotropic field (H_K = 65 Oe) and high resistivity (ρ ∼ 1350) μΩ cm were achieved.     

Effect of the doped nitrogen on the optical properties of β-Ga2O3 nanowires

In this study, optical properties of the nitrogen-doped β-Ga₂O₃ nanowires (N-doped β-Ga₂O₃ NWs) were synthesized by exposing β-Ga₂O₃ NWs under high input power nitrogen plasma (2 kW), using a microwave plasma enhanced chemical vapor deposition (MPECVD) system. The nitrogen contents in the NWs were as-prepared about 7.4, 8.9, 9.7, 13.9, 19.3, and 26.6 at.%, respectively. Low temperature (10 K) cathodoluminescence (CL) spectra exhibit significantly different optical properties for the different nitrogen contents. The CL result of the N-doped β-Ga₂O₃ NWs (210 s N₂ plasma treatment) exhibited four distinct emission peaks at 378, 516, 759, and 970 nm. The possible light emission mechanism including the effect of the nitrogen dopant was discussed.     

Influence of cobalt doping on the crystalline structure, optical and mechanical properties of ZnO thin films

Uniform and transparent thin films of Zn_1 − xCo_xO (0 ≤ x ≤ 0.10) were fabricated by sol-gel spin coating technique. Co addition up to x = 0.075, led to refinement in structure and improvement in film quality together with average grain size reduction from 17 nm in undoped ZnO to 15 nm with x = 0.05 and 12 nm with x = 0.10 Co additions. For x ≥ 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 ≤ x ≤ 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1 − xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1 − xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the overall stress is released leading to lowering of hardness after this concentration. Hall-Petch behavior is also studied and found to obey until x = 0.05, however, considerable deviation after this dopant concentration is attributed to the increase in the volume fraction of grain boundaries, which results from the secondary phase separation from this dopant concentration.     

Optimized microwave dielectric properties of Co- and Ca-substituted Mg0.6Zn0.4TiO3

The system of (1 − y)(Mg_0.6Zn_0.4)_1−xCo_xTiO₃-yCaTiO₃ was investigated to optimize its microwave dielectric properties by adopting appropriate contents of Co and Ca and by controlling sintering conditions. The effect of Co substitution was to enhance densification and Qf value, while the addition of CaTiO₃ resulted in increases of dielectric constant and TCF. As an optimal compositions, 0.93(Mg_0.6Zn_0.4)_0.95Co_0.05TiO₃-0.07CaTiO₃ successfully demonstrated a dielectric constant of 23.04, a Qf of 79,460 GHz and a TCF value of +1.4 ppm/°C after firing at a relatively lower sintering temperature of 1200 °C. The increase of sintering temperature beyond 1200 °C tended to degrade overall microwave dielectric properties presumably due to Zn volatilization as evidenced by the presence of a Zn-deficient phase (MgTi₂O₅) at 1400 °C. An attempt to establish the correlation between microstructure characteristics and dielectric properties was made in this dielectric system where the extensive range of firing temperature up to 1400 °C was evaluated.     

Enhanced ferromagnetic properties of multiferroic BiCoxFe1 − xO3 synthesized by hydrothermal method

The BiCo_xFe_1 − xO₃ samples have been successfully synthesized by hydrothermal process. The resulting products were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDS), differential thermal analysis (DTA), and physical property measurement system (PPMS).It was found that the magnetization of the obtained products was greatly enhanced by Co substituting for Fe ions. Furthermore, the value of magnetism of BiCo_xFe_1 − xO₃ samples can be adjusted by Fe doping concentration. DTA curve indicates the ferroelectric properties of the obtained BCFO samples are not affected by Co substitution. Therefore, it would be interesting to realize thin films with similar compositions and study their properties in the interest of device applications.