Fourier transform spectrometer studies (300-1000 GHz) of Nb-basedquasi-optical SIS detectors

Three Nb/AlO_x/Nb SIS detectors, designed to operate in the 400-550, 550-700, and 600-750 GHz bands, have been studied in direct detection mode using a Fourier-transform spectrometer. All three detectors were of quasi-optical type and had on-chip-integrated-fixed tuned SIS junctions. The tuning ranges of the detectors were selected to cover the interesting region around the superconducting gap frequency of Nb (about 700 GHz). Measurements show detector responses at frequencies above the gap frequency, i.e., up to ≈920 GHz, and that cooling the detectors to 3.1 K improved the direct detection responses about 15% below 700 GHz and about 50% for frequencies up to 800 GHz, compared to the responses at 4.2 K. The 500 GHz SIS detector was also studied in a 440-520 GHz heterodyne receiver set up. Good agreement between modeled tuning circuit characteristics, tuning range of the mixer and the direct detection response bandwidths were found. However, it is essential that the dispersion of the field penetration depth into the superconductor is included in the modeling of the tuning circuits when the detector is operated at frequencies above the superconducting gap     

A novel microstrip square-loop dual-mode bandpass filter with simultaneous size reduction and spurious response suppression

In this paper, a new capacitively stepped-impedance resonator(CSIR) is proposed to develop the microstrip square-loop dual-mode bandpass filter. Using this new design, simultaneous size reduction and spurious response suppression for the dual-mode bandpass filter can be achieved. An analytical formulation of this novel resonator is given in order to elucidate the spurious frequencies relocation design. Together with this formulation, a generalized dual-mode bandpass filter model is developed so as to ease the analysis of transmission zero and insertion loss. A prototype filter is designed at 900MHz with 1.5% fractional bandwidth. Significant spurious suppressions up to 33 and 35 dB are measured at 1.8 and at 2.7 GHz, respectively. A circuitry size reduction of 54% is achieved when compared with that of the conventional structure. Moreover, the CSIR allows frequency tuning and, thus, a varactor-tuned filter is designed and a measured tunable center frequency between 1.5-1.62GHz is demonstrated. Utilizing the proposed structure, not only size reduction,as well as spurious response suppression, but also center frequency tuning can be achieved.     

一种性能多种重构的高频压控有源电感

提出了一种性能多种重构的高频压控有源电感(HFVCAI).电路主要由第一回转回路、第二回转回路以及调控支路构成,且第一回转回路和第二回转回路并联,调控支路与第一回转回路连接,两个回转回路均配置了外部调控端.通过协同调节3个外部调控端,可对HFVCAI的性能进行3种重构:在高频工作区能够对电感值进行大范围调控,且同时能保...     

Dual frequency microstrip rectangular patches

A dual frequency microstrip rectangular patch antenna resonating at frequencies 520 MHz and 2.5 GHz is presented. This antenna incorporates a matching structure to improve the impedance characteristic at one resonance frequency and uses symmetrically positioned varactor diodes to control resonance at a lower frequency. The use of varactor diodes also provides the benefit of a broad tuning range at the lower resonance frequency. A tuning range of 32% at 520 MHz was measured.<>     

Efficient generation of guided millimeter-wave power by photomixing

A 70-GHz bandwidth commercial photodiode has been coupled to W-band waveguide and used as a photomixing source from 75 to 170 GHz. Maximum power conversion efficiency of 1.8% was obtained at 75 GHz, where an optical input of +10 dBm yielded a nonsaturated millimeter-wave (mm-wave) power of -7.5 dBm. Optimizing the photomixer backshort tuning at individual frequencies showed that the mm-wave power decreased with frequency to a level of -30 dBm at 170 GHz. Fixed tuning allowed the generation of power across the full waveguide band from 75 to 110 GHz, with a variation within 5 dB across the majority of the band     

Millimeter-Wave (W-Band) Quartz Image Guide Gunn Oscillator

Dielectric image-guide Gunn oscillator using fused quartz as the guide material has been investigated at frequencies around 94 GHz. Computer-controlled CO/sub 2/ laser cutting of quartz to the designed image-guide patterns has also been achieved. A resonant disk and pin bias circuit was used to tune the oscillator to an output power of 5 mW at the oscillation frequency of 94.2 GHz. An electronic frequency tuning of 350 MHz was measured with the oscillation characteristics similar to waveguide cavity oscillators. By varying the bias circuit disk and pin parameters, the Gunn-oscillator tuning characteristics have also been recorded for the future circuit performance optimization.     

Continuously tunable thin active layer and multisection DFB laserwith narrow linewidth and high power

The feasibility of a wavelength tuning range of 1 nm with the spectral linewidth around 2.5 MHz at about 10 mW is demonstrated in thin-active-layer and multisection 1.5-μm distributed feedback (DFB) lasers with long cavities. The tuning range is widened to over 3 nm by combining electric and thermal tuning effects. A flat FM response with an efficiency of over 1 GHz/mA from low to high (around 1 GHz) frequency is also achieved     

一种双频双圆极化共面波导馈电缝隙天线

一种新型加载两个开口环形接地导带的双频共面波导（CPW）馈电缝隙天线,被提出来实现双旋向圆极化辐射。从天线信号带伸入槽隙的水平矩形调谐短截线用于改善频带内的阻抗和轴比。对天线进行仿真和实物测量。实验结果表明,该天线的10 dB 回波损耗阻抗带宽分别是,在1.55 GHz 频段为27.69％（1.4~1.85 GHz）,在2.55 GHz频段为26.17％（2.075~2.7 GHz）。在1.55 GHz的频段和2.55 GHz频段所测量的3 dB轴比带宽分别是20.51％（1.4~1.72 GHz）和13.44％（2.36~2.7 GHz）。其辐射极化方向分别是低频段右旋圆极化和高频段左旋圆极化,天线在两频段内的峰值增益分别是3.69 dB和3.81 dB。实物测试结果与仿真结果基本吻合。     

An Active Recursive RF Filter in 0.35 μm BiCMOS

An active recursive filter approach is proposed for the implementaion of an inductorless, tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 μm SiGe BiCMOS technology. In simulations, the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from 6 to 9.4 GHz and a noise figure of 8.8 to 10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is ?26 and ?34 dBm respectively, simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 to 10 GHz, i.e. slightly higher center frequencies were measured than the simulated.     

Low-loss and compact V-band MEMS-based analog tunable bandpass filters

This paper presents compact V-band MEMS-based analog tunable bandpass filters with improved tuning ranges and low losses. For compact size and wide tuning range, the two-pole filters are designed using the lumped-elements topology with metal-air-metal (MAM) bridge-type capacitors as tuning elements. Capacitive inter-resonator coupling has been employed to minimize the radiation loss, which is the main loss contributor at high frequencies. Two filters have been demonstrated at 50 and 65 GHz. The 65-GHz analog tunable filter showed a frequency tuning bandwidth of 10% (6.5 GHz) with low and flat insertion losses of 3.3 /spl plusmn/ 0.2 dB over the entire tuning range.     

A K-band InGaP/GaAs HBT balanced MMIC VCO

A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.     

Waveguide/resonant-disc circuits for millimetre-wave devices

Bias circuits using resonant discs have been employed for millimetre-wave transferred-electron (TE) diodes operating at their second or third harmonic frequencies in the V (50?75 GHz) and W (75?110 GHz) bands. It is shown that this type of circuit exhibits resonances at frequencies in the lower millimetre-wave range, corresponding to the fundamental oscillation frequency of diodes typically used. In addition, the circuit provides efficient coupling to the waveguide circuit at the higher (harmonic) operating frequency. By tuning the fundamental oscillation frequency of a number of resonant discs, the power-frequency spectrum of the TE device can be determined, which is demonstrated for a device with its maximum third-harmonic power output at 94 GHz.     

一种电感值和Q峰值可相互独立调谐的高线性有源电感

设计了一种电感值和Q峰值可相互独立调谐的高线性有源电感。该电感主要由跨导增强模块、互补共源级模块以及单端负阻模块构成。其中,跨导增强模块不仅可以作为正跨导器,并且可实现对电感值的大范围调谐；互补共源级模块不仅可以作为负跨导器,并且可改善有源电感的线性度；单端负阻模块不仅提高了Q值,并且补偿由电感值的调谐导致的Q峰值的变化。最终,通过以上模块的相互配合及其外部端口电压的协同调控,改善了有源电感的线性度,而且实现了在同一频率下Q峰值相对于电感值可大范围独立调谐以及在不同频率下电感值相对于Q峰值可大范围独立调谐的优秀性能。验证结果表明,该有源电感电感值的-1 dB压缩点为-7 dBm；在2.07 GHz的频率下,Q峰值可从240调节到1573,而电感值从11.89 nH仅变化到12.11 nH；在0.989 GHz、2.070 GHz和3.058 GHz的不同频率下,取得了493.7、501.2和508.4的高Q峰值,变化率仅为3%,而相应频率下的电感值分别为16.1 nH、13.4 nH和6.8 nH,变化率为136.7%。     

Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz

A fundamental low phase noise W-band VCO extended by an output buffer using InP/InGaAs DHBT technology is reported. The fully integrated differential VCO exhibits operation frequencies ranging from 83 to 89 GHz. At 87 GHz, a minimum phase noise of -102 dBc/Hz at 1 MHz offset frequency has been achieved. Within the tuning range, a single ended output power up to 5 dBm was measured, resulting in a total signal power of 8 dBm.     

Scalable high-power, high-speed CW VCSEL arrays

A demonstration of a high-power, high-speed 980 nm vertical-cavity surface-emitting laser array with continuous-wave power of greater than 120 mW and frequency response over 7.5 GHz at room temperature is reported. Experimental results show that copper plating the array elements and flip-chip bonding provides effective thermal management as well as offering uniform current distribution at microwave frequencies. This is verified by the radial dependence of modulation bandwidth. These arrays may be useful for short-range light detection and ranging or free-space optical communications systems.     

宽频率范围的单子带压控振荡器设计

基于TSMC 180 nm CMOS工艺,提出了一种振荡频率为2～3 GHz的宽频率范围、低相位噪声的单子带压控振荡器(VCO).采用双平衡吉尔伯特混频结构,将单子带5～6 GHz压控振荡器与固定频率3 GHz压控振荡器进行下混频,可得到振荡频率为2～3 GHz的单子带压控振荡器,实现相对带宽从18.18％到40％的展...     

A wideband frequency synthesizer for a receiver application at multiple frequencies

An integer-N frequency synthesizer for a receiver application at multiple frequencies was implemented in 0.18 μm IP6M CMOS technology. The synthesizer generates 2.57 GHz, 2.52 GHz, 2.4 GHz and 2.25 GHz local signals for the receiver. A wide-range voltage-controlled oscillator (VCO) based on a reconfigurable LC tank with a binary-weighted switched capacitor array and a switched inductor array is employed to cover the desired frequencies with a sufficient margin. The measured tuning range of the VCO is from 1.76 to 2.59 GHz. From the carriers of 2.57 GHz,2.52 GHz, 2.4 GHz and 2.25 GHz, the measured phase noises are -122.13 dBc/Hz, -122.19 dBc/Hz, -121.8 dBc/Hz and -121.05 dBc/Hz, at 1 MHz offset, respectively. Their in-band phase noises are -80.09 dBc/Hz, -80.29 dBe/Hz,-83.05 dBc/Hz and -86.38 dBc/Hz, respectively. The frequency synthesizer including buffers consumes a total power of 70 Mw from a 2 V power supply. The chip size is 1.5 × 1 mm~2.     

Multigigahertz bandwidth FM response of frequency tunabletwo-electrode DFB lasers

The FM response of frequency-tunable two-electrode distributed-feedback (DFB) lasers operating at 1.35 μm is discussed. Under certain bias conditions, an FM response of ~1 GHz/mA is flat over a range of modulating frequencies from 10 kHz to several hundred megahertz. This region is followed by a shallow dip and a high-frequency relaxation resonance peak, allowing an overall 3-dB FM bandwidth of ~5 GHz. This is believed to be the widest FM bandwidth reported to date for such lasers; however, variations of the phase of the FM response could limit the useful bandwidth in a frequency-shift keying (FSK) system. The experimental response is a function of static tuning conditions, with significant differences between regions of red and blue frequency shift with increasing current. The observed behavior is well represented by theoretical curves derived from a small-signal analysis     

一种实现自调谐频率综合器的算法和结构

在集成的频率综合器中 ,工艺、温度和电源电压的变化使得频率综合器产生的中心频率和频率调谐范围与期望值发生偏移。文中指出了一种自调谐频率综合器的算法和结构 ,利用特殊结构的可编程压控振荡器和自调谐算法实现宽调谐范围的频率综合器 ,进而充分涵盖期望的输出频段。用 0 2 5 μmCMOS工艺设计了一个中心频率 2 2GHz,调谐范围为 338MHz的频率综合器 ,用于IEEE80 2 11b/g无线局域网系统的超外差收发机中 ,可以充分满足标准要求的 80MHz的调谐范围 ;给出了锁定某一目标频率时自调谐算法的具体工作过程 ,结果表明该算法和结构是正确的。     

Oscillateurs à TEC accordables par varactor dans la bande 18–40 GHz

This paper describes the design, analysis and experimental results of 18–26 GHz fundamental and 26–40 GHz doubler voltage controlled oscillator. They use field effect transistors and hyperabrupt GaAs varactor diodes. The interest of such circuits are a good integration, a high speed frequency tuning capability and a high frequency of oscillation allowing to achieve ultra wide bandVco by frequency transposition at lower frequencies.